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| Number | Title | Issue Date |
| 7439165 | Method of fabricating tensile strained layers and compressive strain layers for a CMOS device A process for forming both tensile and compressive strained silicon layers to accommodate channel regions of MOSFET or CMOS devices has been developed. After formation of shallow trench isolation structures as well as application of high temperature oxidation and ac... | 10/21/2008 |
| 7407865 | Epitaxial growth method An epitaxial growth method for forming a high-quality epitaxial growth semiconductor wafer is provided. The method includes forming a single crystalline layer on a single crystalline wafer; forming a mask layer having nano-sized dots on the single crystalline layer;... | 08/05/2008 |
| 7399692 | III-nitride semiconductor fabrication A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes. ... | 07/15/2008 |
| 7361576 | Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO) A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned ma... | 04/22/2008 |
| 7332417 | Semiconductor structures with structural homogeneity Semiconductor structures are formed with semiconductor layers having reduced compositional variation. Top surfaces of the semiconductor layers are substantially haze-free. ... | 02/19/2008 |
| 7288430 | Method of fabricating heteroepitaxial microstructures An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microst... | 10/30/2007 |
| 7253499 | III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer A III-V group nitride system semiconductor self-standing substrate has III-V group nitride system semiconductor single crystal with a hexagonal crystal system crystalline structure. The substrate is provided with a polished surface at every position of which crystal... | 08/07/2007 |
| 7250360 | Single step, high temperature nucleation process for a lattice mismatched substrate A single step process for nucleation and subsequent epitaxial growth on a lattice mismatched substrate is achieved by pre-treating the substrate surface with at least one group III reactant or at least one group II reactant prior to the introduction of a group V rea... | 07/31/2007 |
| 7245017 | Liquid discharge head and manufacturing method thereof The liquid discharge head has a three-dimensional structure which defines a space including a pressure chamber filled with liquid and a flow channel for supplying the liquid to the pressure chamber, the three-dimensional structure being formed by depositing a compos... | 07/17/2007 |
| 7220658 | Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density. ... | 05/22/2007 |
| 7208393 | Growth of planar reduced dislocation density -plane gallium nitride by hydride vapor phase epitaxy A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films a... | 04/24/2007 |
| 7125735 | Method of fabricating semiconductor device A method of fabricating a semiconductor device includes the steps of forming a step region having a mesa shape in a direction of or on a (100) plane of an InP-based compound semiconductor crystal, and burying the step region with InP-based buried layers... | 10/24/2006 |
| 6692568 | Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is for... | 02/17/2004 |
| 6642070 | Electrically pumped long-wavelength VCSEL and methods of fabrication A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallo... | 11/04/2003 |
| 6521042 | Semiconductor growth method Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tun... | 02/18/2003 |
| 6489175 | Electrically pumped long-wavelength VCSEL and methods of fabrication A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallo... | 12/03/2002 |
| 6486044 | Band gap engineering of amorphous Al-Ga-N alloys A semiconductor structure and a scheme for forming a layer of amorphous material on a semiconductor substrate are provided. In accordance with one embodiment of the present invention, a semiconductor structure is provided comprising an amorphous alloy for... | 11/26/2002 |
| 6368983 | Multi-layer wafer fabrication The invention provides a method of fabricating a wafer including growing a single crystal layer comprising a III-V compound in a first chamber at a temperature above 350° C. A temperature of a surface of the single crystal layer is reduced to below about... | 04/09/2002 |
| 6242326 | Method for fabricating compound semiconductor substrate having quantum dot array structure A method for fabricating a compound semiconductor substrate having a quantum dot array structure includes the steps of forming a plurality of dielectric thin layer patterns on a substrate, thereby forming an exposed area of the substrate, sequentially for... | 06/05/2001 |
| 6197441 | Cubic nitride semiconductor device and fabrication method of the same The object of the present invention is to form a cubic nitride semiconductor layer of excellent surface flatness and crystallization on a cubic III-V family compound semiconductor substrate, featuring a fabrication method that comprises the steps of formi... | 03/06/2001 |
| 6123768 | Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films This invention relates to a method of preparing highly insulating GaN single crystal films in a molecular beam epitaxial growth chamber. A single crystal substrate is provided with the appropriate lattice match for the desired crystal structure of GaN. A ... | 09/26/2000 |
| 5985025 | Semiconductor growth method Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tun... | 11/16/1999 |
| 5948161 | Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface In fabricating a semiconductor device, a semiconductor layer containing Al and a cap layer not containing Al are successively grown on a semiconductor substrate and are placed in a halogen gas environment where a chemical reaction between a halogen and an... | 09/07/1999 |
| 5945690 | Compound semiconductor device The present invention includes a process of growing a compound semiconductor layer locally, after applying radical particles that do not become an etchant of a compound semiconductor layer to an insulating mask so as to terminate the surface of the insula... | 08/31/1999 |
| 5827751 | Method of making semiconductor components, in particular on GaAs of InP, with the substrate being recovered chemically The method is characterized by steps consisting in: a) producing a substrate of GaAs or of InP, b) growing epitaxially on said substrate a separating layer of AlGaAs or of AlInAs that is aluminum-rich, c) growing epitaxially on said separating layer an ac... | 10/27/1998 |
| 5763291 | Method of making semiconductor laser A method of fabricating a semiconductor laser producing visible light includes forming a double heterojunction (DH) structure on a GaAs substrate including an n type GaAs buffer layer, an n type AlGaInP cladding layer, an Alx Ga.sub.(1-x) InP a... | 06/09/1998 |
| 5762706 | Method of forming compound semiconductor device The present invention includes a process of growing a compound semiconductor layer locally, after applying radical particles that do not become an etchant of a compound semiconductor layer to an insulating mask so as to terminate the surface of the insula... | 06/09/1998 |
| 5759264 | Method for vapor-phase growth A method for a vapor-phase growth of a GaAs1-x Px epitaxial layer having a uniform thickness is disclosed. This method allows the GaAs1-x Px epitaxial layer (wherein x stands for an alloy composition satisfying ... | 06/02/1998 |
| 5725674 | Device and method for epitaxially growing gallium nitride layers An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An acti... | 03/10/1998 |
| 5648666 | Double-epitaxy heterojunction bipolar transistors for high speed performance This invention discloses a heterojunction bipolar transistor (HBT) which includes a relatively thin intrinsic collector region and a relatively thick extrinsic collector region such that collector-base capacitance is reduced and electron transit time is m... | 07/15/1997 |
| 5625204 | Compound semiconductors and a method for thin film growth A molecular beam epitaxy (MBE) system (10) is provided to grow thin film, epitaxy layers (44, 46, 48, 50) on compound semiconductor substrates (40). A mass spectrometer detector (95) is used to monitor and control the flux from selected sources (21, 23, 2... | 04/29/1997 |
| 5603765 | Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy High breakdown voltages for AlInAs layers in InP-based devices, such as a gate layer in an InP HEMT or a collector layer in a heterojunction bipolar transistor, are achieved by growing the AlInAs layer by MBE at a substrate temperature about 70°-125° C.... | 02/18/1997 |
| 5602418 | Nitride based semiconductor device and manufacture thereof A nitride semiconductor device is made using a molecular beam epitaxy growth apparatus having a gas source for supplying a compound including gaseous nitrogen, solid body sources for supplying Group III constituents, and sources for supplying n-type and p... | 02/11/1997 |
| 5593917 | Method of making semiconductor components with electrochemical recovery of the substrate The method is characterized by the steps consisting in: a) producing a semi-insulating or n-type substrate; b) forming a separating layer of a p+ -type doped material on the surface of said substrate; c) forming an active layer on said separati... | 01/14/1997 |
| 5491106 | Method for growing a compound semiconductor and a method for producing a semiconductor laser A method for growing a compound semiconductor layer of Alx Ga1-x As (0ࣘxࣘ1) on a compound semiconductor substrate uses a molecular beam epitaxial apparatus, the method including the steps of providing the substrate having a GaAs ... | 02/13/1996 |
| 5484664 | Hetero-epitaxially grown compound semiconductor substrate A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminium arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on t... | 01/16/1996 |
| 5441913 | Process of making a semiconductor epitaxial substrate A semiconductor epitaxial substrate and a process for producing the same, the semiconductor epitaxial substrate comprising a GaAs single-crystal substrate having thereon an Iny Ga.sub.(1-y) As (0 | 08/15/1995 |
| 5436468 | Ordered mixed crystal semiconductor superlattice device On a substrate having a surface slightly tilted by an angle within the range of from 0.5 to 10 degrees from the (110) plane in the direction, a superlattice structure having a periodicity in both and directions is formed. Variou... | 07/25/1995 |
| 5415128 | Rotation induced superlattice This invention describes a multi-deposition system, whereby directing elemental or molecular source fluxes across a substrate in an asymmetrical manner and rotating the substrate at low rotation speeds, a superlattice is formed having a composition of ... | 05/16/1995 |
| 5385862 | Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films This invention relates to a method of preparing highly insulating GaN single crystal films in a molecular beam epitaxial growth chamber. A single crystal substrate is provided with the appropriate lattice match for the desired crystal structure of GaN. A ... | 01/31/1995 |
