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| Number | Title | Issue Date |
| 7442587 | Processes for forming backplanes for electro-optic displays A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional... | 10/28/2008 |
| 7435633 | Electroluminescence device, manufacturing method thereof, and electronic apparatus An organic electroluminescence device including: a substrate having conductivity on at least one side; a first insulation film, formed on one side of the substrate, while having an aperture which partially exposes the same side of the substrate; a semiconductor film... | 10/14/2008 |
| 7422987 | Method for manufacturing semiconductor device It is an object of the invention to provide a technique forming a crystalline semiconductor film whose orientation is uniform by control of crystal orientation and obtaining a crystalline semiconductor film in which concentration of an impurity is reduced. A configu... | 09/09/2008 |
| 7414266 | Semiconductor device and manufacturing method thereof A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode 127, the source region 123 and the drain regio... | 08/19/2008 |
| 7393723 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the la... | 07/01/2008 |
| 7382021 | Insulated gate field-effect transistor having III-VI source/drain layer(s) A transistor includes one or more channel taps containing a stack consisting at least in part of a semiconductor an interfacial III-VI layered compound and a conductor. The III-VI compound consists primarily of atoms from Groups IIIA-B and from Group VIA of the Peri... | 06/03/2008 |
| 7368358 | Method for producing field effect device that includes epitaxially growing SiGe source/drain regions laterally from a silicon body A structure, and method of fabrication, for high performance field effect devices is disclosed. The MOS structures include a crystalline Si body of one conductivity type, a strained SiGe layer epitaxially grown on the Si body serving as a buried channel for holes, a... | 05/06/2008 |
| 7297577 | SOI SRAM device structure with increased W and full depletion An SOI device, and a method for producing the SOI device, for use in an SRAM memory having enhanced stability. The SRAM is formed with a wider W and a fully-depleted FET. The wider FET is extended by an expitaxial silicon sidewall, and the performance of the FET is ... | 11/20/2007 |
| 7229863 | Method for fabricating thin film transistors A method for fabricating a thin film transistor is provided. First, a gate is formed on a substrate. A gate-insulating layer is formed to cover the gate. A patterned semiconductor layer is formed on the gate-insulating layer. A first and a second conductive layer ar... | 06/12/2007 |
| 7215006 | Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provi... | 05/08/2007 |
| 7208800 | Silicon-on-insulator substrate, fabricating method thereof, and method for fabricating floating structure using the same A silicon-on-insulator (SOI) substrate including laminated layers of a substrate, an oxide layer, and a silicon layer in order. The oxide layer has an electrifying hole fluidly connected with the substrate and the electrifying hole is filled with a part of the silic... | 04/24/2007 |
| 4833100 | Method for producing a silicon thin film by MBE using silicon beam precleaning The present invention relates to a method for producing a semiconductor thin film, in which a single crystalline silicon film is grown on an insulative single crystalline substrate, such as a single crystalline sapphire substrate, by the molecular beam ep... | 05/23/1989 |
| 4622236 | Boron nitride film and process for preparing same A boron nitride (BN) film is disclosed having excellent electrical insulating and heat conduction characteristics and capable of acting as seeds for epitaxially growing a semiconductor film thereon which has a crystallizability sufficient to incorporate a... | 11/11/1986 |
| 4565741 | Boron nitride film and process for preparing same A boron nitride (BN) film is disclosed having excellent electrical insulating and heat conduction characteristics and capable of acting as seeds for epitaxially growing a semiconductor film thereon which has a crystallizability sufficient to incorporate a... | 01/21/1986 |
| 4523211 | Semiconductor device A semiconductor device having multi-layered structure is disclosed. The semiconductor device comprises a first semiconductor layer, a second semiconductor layer, a beryllium oxide (BeO) film for insulating between the first and second semiconductor layers... | 06/11/1985 |
| 4477308 | Heteroepitaxy of multiconstituent material by means of a _template layer The method for growing heteroepitaxial multiconstituent material on a substrate comprises deposition of a thin disordered layer of a "template-forming" material, i.e., material containing at least one constituent of the multiconstituent material to be gro... | 10/16/1984 |
| 4251289 | Gradient doping in amorphous silicon An amorphous silicon semiconductor having a gradient doping profile is produced by thermo-electrically diffusing an ionizable deposit material such as antimony or aluminum, for example, into the amorphous silicon layer. Embodied in a photovoltaic device, ... | 02/17/1981 |
| 4218271 | Method of manufacturing semiconductor devices utilizing a sure-step molecular beam deposition Method of making a semiconductor device which includes a III-V compound stratum. A film consisting of one of the elements Sn, Ge, Si, Be, Mn or Mg is deposited by an M.B.E. process on an exposed surface of the III-V compound stratum. A III-V compound laye... | 08/19/1980 |
