Bizarre Patents
Wearable Device For Feeding and Observing Birds and Other Flying Animals
A device for feeding and observing flying animals comprising a hat, a support mounted on the hat and extending outward from the hat, and a feeder mounted on the support.
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| Number | Title | Issue Date |
| 7329583 | Method of fabricating isolated semiconductor devices in epi-less substrate An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does... | 02/12/2008 |
| 7276431 | Method of fabricating isolated semiconductor devices in epi-less substrate An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does... | 10/02/2007 |
| 6316332 | Method for joining wafers at a low temperature and low stress The method of the present invention is used to join two dissimilar materials together, and particularly to transfer a film to a substrate when the difference in thermal expansion coefficients between the film and the substrate is very big. A hydrophilic s... | 11/13/2001 |
| 6261928 | Producing microstructures or nanostructures on a support A method for producing a micro- or nanostructure on a substrate. In a first step, one surface of a first wafer in crystalline material is placed in contact with one surface of a second wafer in crystalline material, such that crystalline lattices presente... | 07/17/2001 |
| 5872388 | Semiconductor device and method for fabricating the same A semiconductor device having a bonded wafer structure capable of reducing crystal defect in a power element forming region thereof is disclosed. A recess is formed in a control circuit element forming region of a first n- silicon substrate, then filled w... | 02/16/1999 |
| 5726089 | Semiconductor device and method for fabricating the same A method for fabricating a semiconductor device having a bonded wafer structure capable of reducing crystal defect in a power element forming region thereof is disclosed A recess is formed in a control circuit element forming region of a first n- silicon ... | 03/10/1998 |
| 4075038 | Deep diode devices and method and apparatus Deep diodes which extend in straight lines through a silicon wafer are produced by migrating aluminum droplets through the wafer while maintaining a finite temperature gradient through the wafer in the direction of straight line droplet travel, and at the... | 02/21/1978 |
| 4031607 | Minority carrier isolation barriers for semiconductor devices A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produc... | 06/28/1977 |
| 4024566 | Deep diode device When an aluminum-rich droplet is migrated along the [100] axis of a silicon crystal during a thermal gradient zone melting operation, a droplet is displaced appreciably from its thermal trajectory by dislocations it encounters in the crystal. This random ... | 05/17/1977 |
| 3988766 | Multiple P-N junction formation with an alloy droplet A droplet of alloy material containing at least two semiconductor dopant type elements, each of which has a different ratio of diffusivity, is thermomigrated by a thermal gradient zone melting process through a body of semiconductor material leaving behin... | 10/26/1976 |
| 3988771 | Spatial control of lifetime in semiconductor device Deep level impurities such, for example, as gold, platinum, silver, nickel and copper, are introduced into selected regions of semiconductor devices by directional solidification to reduce the charge recombination lifetime and therefore the turn-off time ... | 10/26/1976 |
| 3988762 | Minority carrier isolation barriers for semiconductor devices A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produc... | 10/26/1976 |
| 3977910 | Deep finger diodes Deep finger diodes in a body of semiconductor material are fabricated by a thermal gradient zone melting process. A liquid wire or droplet is migrated into the body through one surface to a depth less than the thickness of the body. The migration of the l... | 08/31/1976 |
| 3956026 | Making a deep diode varactor by thermal migration A varactor has a lamellar structure of a plurality of abutting regions of alternate and opposite type conductivity. The structure is produced by thermal gradient zone melting processing.... | 05/11/1976 |
| 3956024 | Process for making a semiconductor varistor embodying a lamellar structure A varistor has a lamellar structured body of semiconductor material. The lamellar structure is produced by migrating "wires" of metal by a temperature gradient zone melting process to form a plurality of alternate regions of opposite type conductivity in ... | 05/11/1976 |
| 3956023 | Process for making a deep power diode by thermal migration of dopant A semiconductor diode comprises a first body of semiconductor material having a selected resistivity and a first type conductivity and a region of second type conductivity and a selected resistivity. The second body consists of recrystallized semiconducto... | 05/11/1976 |
