Class 257/E21.057 - Using ion implantation (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.056. This subclass
No. of patents: 36
Last issue date: 10/28/2008

Number	Title	Issue Date
7442631	Doping method and method of manufacturing field effect transistor A doping method comprising the steps of; obtaining a proportion X of ions of a compound including a donor or an acceptor impurity in total ions from mass spectrum by using a first source gas of a first concentration; analyzing a peak concentration Y of the compound ...	10/28/2008
7301221	Controlling diffusion in doped semiconductor regions A method and device for reducing a dopant diffusion rate in a doped semiconductor region is provided. The methods and devices include selecting a plurality of impurity elements, including at least one dopant element. Selection of a plurality of impurity elements inc...	11/27/2007
7297617	Method for controlling diffusion in semiconductor regions A method and device for reducing a dopant diffusion rate in a doped semiconductor region is provided. The methods and devices include selecting a plurality of impurity elements, including at least one dopant element. Selection of a plurality of impurity elements inc...	11/20/2007
7262118	Method for generating a structure on a substrate The invention relates to a method for generating very short gate structures. In a method for generating a structure on a substrate in accordance with one embodiment of the invention, first of all a layer sequence of a first oxide layer, a first nitride layer and a s...	08/28/2007
7217667	Processes for forming electronic devices including a semiconductor layer An impurity can be introduced into a semiconductor layer of a workpiece to affect the oxidation and the relative concentration of one element with respect to another element within the semiconductor layer. The impurity can be selectively implanted using one or more ...	05/15/2007
7205186	System and method for suppressing oxide formation A system and method for suppressing sub-oxide formation during the manufacturing of semiconductor devices (such as MOSFET transistor) with high-k gate dielectric is disclosed. In one example, the MOSFET transistor includes a gate structure including a high-k gate di...	04/17/2007
7161220	High speed photodiode with a barrier layer for blocking or eliminating slow photonic carriers and method for forming same A structure (and method for forming the structure) includes a photodetector, a substrate formed under the photodetector, and a barrier layer formed over the substrate. The buried barrier layer preferably includes a single or dual p-n junction, or a bubble layer for ...	01/09/2007
7098120	Method of manufacturing semiconductor devices A method of manufacturing semiconductor devices includes forming element isolation regions in a semiconductor substrate, a gate insulation film in an element region surrounded by the element isolation regions and an impurity doped metal silicide film on the gate ins...	08/29/2006
6703294	Method for producing a region doped with boron in a SiC-layer A method for producing a crystalline layer of SiC having at least a region thereof doped with boron atoms comprises a step a) of ion implantation of boron into a layer (1) of crystalline SiC and a step b) of heating the SiC-layer for annealing it for maki...	03/09/2004
6639273	Silicon carbide n channel MOS semiconductor device and method for manufacturing the same A silicon carbide n channel MOS semiconductor device is provided which includes a silicon carbide substrate including a p base region, an n30 source region and an n+ drain region, a gate insulating film formed on a surface of the p ...	10/28/2003
6577386	Method and apparatus for activating semiconductor impurities An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelen...	06/10/2003
6429459	Semiconductor component with foreign atoms introduced by ion implantation and process for producing the same A semiconductor component having impurity atoms introduced by implantation which are subsequently electrically activated by way of an annealing process. Immediately after the annealing process, the component has a mean surface roughness of less than 15 nm...	08/06/2002
6406983	Process for the thermal annealing of implantation-doped silicon carbide semiconductors A process for the thermal annealing of implantation-doped silicon carbide semiconductors in a gas stream brings practically no carbon to the silicon carbide semiconductor. In one embodiment, a container, a carrier, radiation shields and a baseplate are co...	06/18/2002
6383902	Method for producing a microelectronic semiconductor component The invention relates to a method for producing a microelectronic semiconductor component, especially made of silicon carbide. According to said method doped areas are produced in the semiconductor by ion implantation and radiation damage in the semicondu...	05/07/2002
6294444	Method for manufacturing silicon carbide semiconductor device In a method for manufacturing a silicon carbide semiconductor device, preliminary heat treatment is conducted after implanting impurity ions into a silicon carbide substrate, such that the silicon carbide substrate is heated at a temperature in a range of...	09/25/2001
6255201	Method and device for activating semiconductor impurities An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelen...	07/03/2001
6235616	Method of ion implantation into silicon carbide semiconductors Acceptor atoms such as aluminum (Al) and boron (B) are introduced into a silicon carbide (SiC) semiconductor by ion implantation, and carbon (C) atoms additionally are introduced by ion implantation, whereby the electrical activation of the acceptor atoms...	05/22/2001
6221700	Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities A surface portion of a p type base region is made amorphous as an amorphous layer by implanting nitrogen ions which serve as impurities and ions which do not serve as impurities. After that, the amorphous layer is crystallized to have a specific crystal s...	04/24/2001
6159884	Method of annealing silicon carbide for activation of ion-implanted dopants A method and crucible for annealing SiC at high temperatures. The crucible s a vessel having a peripheral wall, at least two compartments separated by an inner wall within the peripheral wall and a lid which separates the compartments from the crucible sur...	12/12/2000
6107142	Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion Silicon carbide power devices are fabricated by implanting p-type dopants into a silicon carbide substrate through an opening in a mask, to form a deep p-type implant. N-type dopants are implanted into the silicon carbide substrates through the same openi...	08/22/2000
6096627	Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC A method for introducing an impurity dopant into a semiconductor layer of SiC is provided. Ions are implanted into the semiconductor layer so that a near surface of the semiconductor layer becomes doped and amorphous. The semiconductor layer is then annea...	08/01/2000
6083814	Method for producing a pn-junction for a semiconductor device of SiC A method for producing a pn-junction for a semiconductor device of SiC intended to have at least one lateral zone of junction termination with a lower doping concentration of a first conductivity type than a main zone for smearing out the electrical field...	07/04/2000
5981900	Method of annealing silicon carbide for activation of ion-implanted dopants A method and crucible for annealing SiC at high temperatures. The crucible is a vessel having a peripheral wall, at least two compartments separated by an inner wall within the peripheral wall and a lid which separates the compartments from the crucible s...	11/09/1999
5962893	Schottky tunneling device An n-semiconductor layer is arranged on a low-resistance n-substrate. A drain electrode is in ohmic contact with the n-substrate. A source electrode forms a Schottky junction with the n-semiconductor layer. A gate electrode is arranged adjacent to the sou...	10/05/1999
5952679	Semiconductor substrate and method for straightening warp of semiconductor substrate A plurality of grooves are formed in a SiC substrate consisting of an n- -type epitaxial layer and a p-type epitaxial layer layered on the surface of an n+ -type monocrystalline SiC semiconductor substrate. These grooves are formed i...	09/14/1999
5851908	Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC A method for introduction of an impurity dopant into a semiconductor layer of SiC comprises the step of ion implantation of the dopant in the semiconductor layer at a low temperature. The ion implantation is carried out in such a way that a doped and amor...	12/22/1998
5849620	Method for producing a semiconductor device comprising an implantation step A method for producing a semiconductor device having a semiconductor layer of SiC is disclosed. The method comprises the steps of applying an insulation layer on the semiconductor layer, implanting first impurity dopant into the semiconductor layer, and a...	12/15/1998
5804483	Method for producing a channel region layer in a sic-layer for a voltage controlled semiconductor device In a method for producing a channel region layer in a SiC-layer for producing a voltage controlled semiconductor device n-type dopants and p-type dopants are implanted into a near-surface layer of the SiC layer. The p-type dopants implanted have a higher ...	09/08/1998
5710059	Method for producing a semiconductor device having a semiconductor layer of SiC by implanting A method for producing a semiconductor device comprises a step of implanting first conductivity type impurity dopants of at least two different elements in a semiconductor layer being doped according to a second opposite conductivity type, and after that ...	01/20/1998
5705406	Method for producing a semiconductor device having semiconductor layers of SiC by the use of an ion-implantation technique A method for producing a semiconductor device having semiconductor layers of SiC with at least three doped layers on top of each other, comprises the steps of growing a first semiconductor layer of SiC; implanting an impurity dopant into the first layer t...	01/06/1998
5338945	Silicon carbide field effect transistor A silicon carbide field effect transistor of the present invention includes a base and source region each formed by a series of amorphizing, implanting and recrystallizing steps. Moreover, the drain, base and source regions extend to a face of a monocryst...	08/16/1994
5322802	Method of fabricating silicon carbide field effect transistor A silicon carbide field effect transfer of the present invention includes a base and source region each formed by a series of amorphizing, implanting and recrystallizing steps. Moreover, the drain, base and source regions extend to a face of a monocrystal...	06/21/1994
5318915	Method for forming a p-n junction in silicon carbide A method for forming a p-n junction in silicon carbide includes the steps of amorphizing a portion of a monocrystalline silicon carbide substrate, implanting dopant ions into the amorphous portion of the substrate and then recrystallizing the amorphous po...	06/07/1994
5087576	Implantation and electrical activation of dopants into monocrystalline silicon carbide The invention is a method of ion implantation of dopant ions into a substrate of silicon carbide. In the method, the implantation takes place at elevated temperatures, following which the substrate may be oxidized or annealed....	02/11/1992
5030580	Method for producing a silicon carbide semiconductor device A method for producing a silicon carbide semiconductor device having at least one of the p-type conductive layer and the n-type conductive layer is disclosed which includes the steps of: forming a silicon carbide single-crystal layer on a semiconductor su...	07/09/1991
4947218	P-N junction diodes in silicon carbide The invention comprises a method of forming a diode which is operable at high temperature, at high power levels, and under conditions of high radiation density. The method comprises bombarding a region of a substrate of doped silicon carbide having a firs...	08/07/1990

PatentStorm

Bizarre Patents

PatentStorm News

Class 257/E21.057 - Using ion implantation (EPO)