Quotables
"Without question, the greatest invention in the history of mankind is beer. Oh, I grant you that the wheel was also a fine invention, but the wheel does not go nearly as well with pizza."
Dave Barry
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7253533 | Divided shadow mask for fabricating organic light emitting diode displays A divided shadow mask for use in fabricating an organic light emitting diode display including a first shadow mask section having a plurality of openings; and at least a second shadow mask section having a plurality of openings. ... | 08/07/2007 |
| 7233038 | Self masking contact using an angled implant A method of implanting, for example, a phosphorous plug over a charge collection region and a method of forming a contact over the phosphorous plug implant and charge collection region. The method allows implantation of phosphorous or other materials without contami... | 06/19/2007 |
| 7208382 | Semiconductor device with high conductivity region using shallow trench A method and structure is provided for an integrated circuit with a semiconductor substrate having an opening provided therein. A doped high conductivity region is formed from doped material in the opening and a diffused dopant region proximate the doped material in... | 04/24/2007 |
| 7192853 | Method of improving the breakdown voltage of a diffused semiconductor junction A method is provided for forming a graded junction in a semiconductor material having a first conductivity type. Dopant having a second conductivity type opposite the first conductivity type is introduced into a selected region of the semiconductor material to defin... | 03/20/2007 |
| 7144829 | Method for fabricating semiconductor device and semiconductor substrate A first thermal treatment, which is performed at a temperature within 650–750° C. for 30–240 minutes, and thereafter a second thermal treatment, which is performed at a temperature within 900–1100° C. for 30–120 minutes, are performed as the initial therma... | 12/05/2006 |
| 6617653 | MISFET P-type active region 12; n-type source/drain regions 13a and 13b; gate insulating film 14 made of a thermal oxide film; gate electrode 15; source/drain electrodes 16a and 16b, are provided over a p-type SiC substrate 11. In the active region 12, p-type he... | 09/09/2003 |
| 6329088 | Silicon carbide epitaxial layers grown on substrates offcut towards <1100> A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the crystalline direction of the substrate. The resultant sili... | 12/11/2001 |
| 6306211 | Method for growing semiconductor film and method for fabricating semiconductor device In a chamber, a substrate is mounted on a susceptor and then heated to an elevated temperature. Source and diluting gases are supplied into the chamber through source and diluting gas supply pipes provided with respective flow meters. In addition, a dopin... | 10/23/2001 |
| 6300228 | Multiple precipitation doping process A multiple precipitation doping process for doping a semiconductor substrate (30) starts with forming an amorphous region (32) in the substrate (30). Through multiple laser exposures, multiple dopant precipitation films (52, 53) are formed on correspondin... | 10/09/2001 |
| 6204160 | Method for making electrical contacts and junctions in silicon carbide A method for making electrical contacts and junctions in silicon carbide that concurrently incorporates and activates dopants from a gaseous ambient. The low temperature processing of the present invention prevents the formation of crystalline defects dur... | 03/20/2001 |
| 6133120 | Boron-doped p-type single crystal silicon carbide semiconductor and process for preparing same A p-type silicon carbide semiconductor having a high carrier concentration and activation rate is provided by doping boron as an acceptor impurity in a single crystal silicon carbide. The boron occupies silicon sites in a crystal lattice of the single cry... | 10/17/2000 |
| 6077760 | Structure and method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance characteristics A method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance, by which one or more single-crystal silicon carbide/single-crystal silicon layer(s) with different types of dopants is/a... | 06/20/2000 |
| 5804482 | Method for producing a semiconductor device having a semiconductor layer of SiC A method for producing a semiconductor device, having a semiconductor layer of a SiC comprises the steps of a) supplying dopants to the surface of the SiC layer during heating thereof for diffusion of the dopants into the SiC layer, and b) highly doping a... | 09/08/1998 |
| 5654208 | Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step The present invention relates to a method for producing a semiconductor device having a semiconductor layer of SiC. The method comprises the steps of a) applying a mask on at least a portion of the SiC layer to coat a first portion of the SiC layer leavin... | 08/05/1997 |
