Did You Know...
...that the video game, Pong, was invented by a guy who graduated at the bottom of his engineering class? Nolan Bushnell spent more time running the games at a local amusement park than he did on his studies at the University of Utah. His dreams of working for Disney's amusement empire were dashed when the company wouldn't hire him. Taking a boring job, Nolan daydreamed about electronic versions of popular games. He invented Pong, the first video game, and went on to found Atari Co.
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| Number | Title | Issue Date |
| 7442954 | Organic electronic component comprising a patterned, semi-conducting functional layer and a method for producing said component The invention relates to an organic electronic component such as an organic field effect transistor and a method for producing said component, the semiconducting layer of the component being patterned, although the component can be produced by an inexpensive printin... | 10/28/2008 |
| 7442625 | Apparatus for annealing, method for annealing, and method for manufacturing a semiconductor device An apparatus for annealing a substrate includes a substrate stage having a substrate mounting portion configured to mount the substrate; a heat source having a plurality of heaters disposed under the substrate mounting portion, the heaters individually preheating a ... | 10/28/2008 |
| 7439117 | Method for designing a micro electromechanical device with reduced self-actuation A method is described for designing a micro electromechanical device in which the risk of self-actuation of the device in use is reduced. The method includes locating a first conductor in a plane and locating a second conductor with its collapsible portion at a pred... | 10/21/2008 |
| 7410878 | Polysilicon film having smooth surface and method of forming the same A method of forming a polysilicon film having smooth surface using a lateral growth and a step-and-repeat laser process. Amorphous silicon formed in a first irradiation region of a substrate is crystallized to form a first polysilicon region by a first laser shot. T... | 08/12/2008 |
| 7405464 | Array substrate, method of manufacturing the same and method of crystallizing silicon An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern having at least one block. Grains are formed in each of the at least one b... | 07/29/2008 |
| 7399666 | Atomic layer deposition of ZrN/ZrO films as gate dielectrics The use of atomic layer deposition (ALD) to form a dielectric layer of zirconium nitride (Zr3N4) and zirconium oxide (ZrO2) and a method of fabricating such a dielectric layer produces a reliable structure for use in a variety of ele... | 07/15/2008 |
| 7393728 | Method of manufacturing an array substrate of a transflective liquid crystal display A method of manufacturing an array substrate of a transflective liquid crystal display is provided. Utilizing backward exposure and half-tone photo-mask to reduce the number of photo-masks used in the manufacturing process, only three to four photo-masks are used to... | 07/01/2008 |
| 7368776 | Semiconductor device comprising a highly-reliable, constant capacitance capacitor A semiconductor device, having a memory cell region and a peripheral circuit region, includes an insulating film, having an upper surface, formed on a major surface of a semiconductor substrate to extend from the memory cell region to the peripheral circuit region. ... | 05/06/2008 |
| 7368370 | Site-specific nanoparticle self-assembly Disclosed herein are methods of self-assembling nanoparticles on specific sites of a substrate. The method generally includes introducing a p-type dopant species to at least a portion of an n-type substrate or introducing an n-type dopant species to at least a porti... | 05/06/2008 |
| 7361539 | Dual stress liner A semiconductor device structure is provided which includes a first field effect transistor (“FET”) having a first channel region, a first source region, a first drain region and a first gate conductor overlying the first channel region. A second FET is included... | 04/22/2008 |
| 7358127 | Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof Impurity concentration (Nd(X)) in an n-drift layer in a diode is at a maximum at a position at a distance Xp from an anode electrode in a direction from the anode electrode to a cathode electrode, and gradually decreases from the position toward each of t... | 04/15/2008 |
| 7348229 | Method of manufacturing a semiconductor device and semiconductor device obtained with such a method The invention relates to a method of manufacturing a semiconductor device (10) with a field effect transistor, in which method a semiconductor body (1) of silicon is provided at a surface thereof with a source region (2) and a drain region (3... | 03/25/2008 |
| 7329571 | Technique for providing multiple stress sources in NMOS and PMOS transistors By combining a plurality of stress inducing mechanisms in each of different types of transistors, a significant performance gain may be obtained, thereby providing enhanced flexibility in adjusting product specific characteristics. For this purpose, sidewall spacers... | 02/12/2008 |
| 7326598 | Method of fabricating polycrystalline silicon A method of fabricating polycrystalline silicon according to an embodiment includes forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region surrounding the first region; forming a plurality of flat align keys in th... | 02/05/2008 |
| 7316945 | Method of fabricating a fin field effect transistor in a semiconductor device A method for fabricating a fin FET in a semiconductor device. The method includes sequentially depositing first and second insulation films on a semiconductor substrate, etching the first and second insulation films using a first mask to form a trench, and depositin... | 01/08/2008 |
| 7309634 | Non-volatile semiconductor memory devices using prominences and trenches A semiconductor substrate is patterned to form a depression and prominence. A floating gate is formed so as to cover at least both sidewalls of the prominence of the depression and prominence, and is then etched to form a trench for a device isolation self-aligned w... | 12/18/2007 |
| 7300827 | Method of manufacturing a thin film transistor substrate and stripping composition A method of manufacturing a thin film transistor substrate includes forming a transistor thin layer pattern, forming a protecting layer, forming a photoresist film, forming a pixel electrode and a conductive layer that are separated from each other, stripping a phot... | 11/27/2007 |
| 7268027 | Method of manufacturing photoreceiver Disclosed is a method of manufacturing a photoreceiver, including sequentially laminating a buffer layer, a channel layer, a barrier layer, and a cap layer on a substrate; forming a mesa for HEMT and MSM PD by removing the buffer layer, the channel layer, the barrie... | 09/11/2007 |
| 7259110 | Manufacturing method of display device and semiconductor device It is an object of the present invention to improve the surface planarity of a film by uniforming the thickness of an insulating layer. Further, it is another object of the invention to provide a technology for manufacturing an electronic device typified by a high-d... | 08/21/2007 |
| 7244991 | Semiconductor integrated device A semiconductor integrated apparatus, including: an SOI (Silicon On Insulator) substrate which has a support substrate and an embedded insulation film; an NMOSFET, a PMOSFET and an FBC (Floating Body Cell) formed on the SOI substrate separately from each other; a p ... | 07/17/2007 |
| 7229884 | Phosphorous doping methods of manufacturing field effect transistors having multiple stacked channels Integrated circuit field effect transistors are manufactured by forming a pre-active pattern on a surface of a substrate, while refraining from doping the pre-active pattern with phosphorus. The pre-active pattern includes a series of interchannel layers and channel... | 06/12/2007 |
| 7214571 | Electromechanical electron transfer devices An electron transfer device is implemented in a structure which is readily capable of achieving charge transfer cycle frequencies in the range of several hundred MHz or more and which can be formed by conventional semiconductor integrated circuit manufacturing proce... | 05/08/2007 |
| 7205186 | System and method for suppressing oxide formation A system and method for suppressing sub-oxide formation during the manufacturing of semiconductor devices (such as MOSFET transistor) with high-k gate dielectric is disclosed. In one example, the MOSFET transistor includes a gate structure including a high-k gate di... | 04/17/2007 |
| 7179696 | Phosphorus activated NMOS using SiC process A method (10) of forming a transistor (100) includes treating (12) at least some of a semiconductor substrate (102) with carbon and then forming (18) a gate structure (114) over the semiconductor substrate. A channel region ... | 02/20/2007 |
| 7169674 | Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and ... | 01/30/2007 |
| 7163848 | Semiconductor device and manufacturing method thereof OFF current of a TFT is reduced. There is provided a semiconductor device includung: a substrate; a shielding film formed so as to be in contact with the substrate; a planarization insulating film formed on the substrate so as to cover the shielding film; and a semi... | 01/16/2007 |
| 6180519 | Method of forming a layered wiring structure including titanium silicide A gate electrode is made up of a polycrystalline silicon film containing phosphorous as a dopant for determining its conductivity type, a titanium silicide film of the C54 structure, and a tungsten silicide film all of which films are laid one on another ... | 01/30/2001 |
| 6025211 | Hydrogen-terminated diamond MISFET and its manufacturing method On the surface of a hydrogen-terminated diamond 1 formed by terminating a surface 2 of either a homoepitaxial diamond or a heteroepitaxial diamond or a surface-flattened polycrystal diamond are formed a drain-ohmic contact 4 and a source-ohmic contact 3 o... | 02/15/2000 |
| 6025233 | Method of manufacturing a semiconductor device A vertical type semiconductor device having a semiconductor substrate and at least one gate electrode structure formed in the semiconductor substrate for controlling a current flow across the semiconductor substrate. The semiconductor substrate is formed ... | 02/15/2000 |
| 6002143 | Hybrid vertical type power semiconductor device A vertical type semiconductor device having a semiconductor substrate and at least one gate electrode structure formed in the semiconductor substrate for controlling a current flow across the semiconductor substrate. The semiconductor substrate is formed ... | 12/14/1999 |
| 5854496 | Hydrogen-terminated diamond misfet and its manufacturing method On the surface of a hydrogen-terminated diamond 1 formed by terminating a surface 2 of either a homoepitaxial diamond or a heteroepitaxial diamond or a surface-flattened polycrystal diamond are formed a drain-ohmic contact 4 and a source-ohmic contact 3 o... | 12/29/1998 |
| 5801425 | Semiconductor device having a wiring layer including a TISI2, film of the C49 or C54 structure A gate electrode is made up of a polycrystalline silicon film containing phosphorous as a dopant for determining its conductivity type, a titanium silicide film of the C54 structure, and a tungsten silicide film all of which films are laid one on another ... | 09/01/1998 |
| 5786604 | Element-isolated hydrogen-terminated diamond semiconductor device and its manufacturing method A diamond semiconductor device having at least one MESFET integrated on a single diamond substrate and insulated from other semiconductor elements is made by preparing a homoepitaxial diamond film 1 having a hydrogen-terminated surface; then making a drai... | 07/28/1998 |
| 5632812 | Diamond electronic device and process for producing the same A diamond electronic device constituted of a diamond crystal formed on a substrate comprises a diamond crystal having the ratio (h/L) of length (h) of the diamond crystal in direction substantially perpendicular to the face of the substrate to length (L) ... | 05/27/1997 |
| 5523588 | Diamond film field effect transistor with self aligned source and drain regions A diamond film field effect transistor, excellent in characteristics and a method of manufacturing the transistor, in which a contact resistance between electrodes and respective source and drain region is small. The transistor has a channel layer of a p-... | 06/04/1996 |
| 5391895 | Double diamond mesa vertical field effect transistor A double diamond mesa vertical field effect transistor includes a diamond layer, a first diamond mesa on a diamond layer, and a second diamond mesa on the first diamond mesa, opposite the diamond layer. A source contact is formed on the second diamond mes... | 02/21/1995 |
| 5382809 | Semiconductor device including semiconductor diamond A semiconductor device having an MISFET-like structure. The semiconductor device comprises: an p-type semiconductor diamond layer disposed on an insulating diamond substrate for providing a channel region; and a drain electrode, a source electrode and a g... | 01/17/1995 |
| 5371383 | Highly oriented diamond film field-effect transistor A diamond film FET according to the present invention comprises a semiconducting diamond layer, a gate, a source, and a drain, wherein said semiconducting diamond layer comprises a semiconducting highly-oriented diamond film grown by chemical vapor deposi... | 12/06/1994 |
| 5350944 | Insulator films on diamonds Electrical quality insulating films on n-type and p-type diamond substrates are provided in which an insulating film such as a silicon dioxide film is deposited onto the exposed face of a diamond substrate, such as by chemical vapor deposition. Forming a ... | 09/27/1994 |
| 5309000 | Diamond films with heat-resisting ohmic electrodes A is a heat-resisting ohmic electrode on diamond film, including: a p-type semiconducting diamond film; a boron-doped diamond layer provided on the semiconducting diamond film; and an electrode element made of p-type Si selectively formed on the boron-dop... | 05/03/1994 |
