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| Number | Title | Issue Date |
| 7417271 | Electrode structure having at least two oxide layers and non-volatile memory device having the same An electrode structure having at least two oxide layers that more reliably switch and operate without the use of additional devices and a non-volatile memory device having the same are provided. The electrode structure may include a lower electrode, a first oxide la... | 08/26/2008 |
| 7411218 | Method and device with durable contact on silicon carbide A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky con... | 08/12/2008 |
| 7407859 | Compound semiconductor device and its manufacture A compound semiconductor device has: a substrate; a GaN channel layer; an n-type AlqGal-qN (0 | 08/05/2008 |
| 7371668 | Method for making a metal oxide semiconductor device A method for making a MOS device includes: forming an insulator layer on a semiconductor substrate, the insulator layer including a titanium dioxide film that has a surface with hydroxyl groups formed thereon; and forming an aluminum cap film on the surface of the t... | 05/13/2008 |
| 7368371 | Silicon carbide Schottky diode and method of making the same A method of forming silicon carbide Schottky diode is disclosed. The processes required two photo-masks only. The processes are as follows: firstly, an n+-silicon carbide substrate having an n− silicon carbide drift layer is provided. Then a silicon layer is forme... | 05/06/2008 |
| 7268027 | Method of manufacturing photoreceiver Disclosed is a method of manufacturing a photoreceiver, including sequentially laminating a buffer layer, a channel layer, a barrier layer, and a cap layer on a substrate; forming a mesa for HEMT and MSM PD by removing the buffer layer, the channel layer, the barrie... | 09/11/2007 |
| 7250666 | Schottky barrier diode and method of forming a Schottky barrier diode Disclosed is a silicon-on-insulator-based Schottky barrier diode with a low forward voltage that can be manufactured according to standard SOI process flow. An active silicon island is formed using an SOI wafer. One area of the island is heavily-doped with an n-type... | 07/31/2007 |
| 7186625 | High density MIMCAP with a unit repeatable structure A structure, apparatus and method for utilizing vertically interdigitated electrodes serves to increase the capacitor area surface while maintaining a minimal horizontal foot print. Since capacitance is proportional to the surface area the structure enables continua... | 03/06/2007 |
| 5869390 | Method for forming electrode on diamond for electronic devices Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of ... | 02/09/1999 |
| 5770467 | Method for forming electrode on diamond for electronic devices Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of ... | 06/23/1998 |
| 5757032 | Semiconductor diamond device having improved metal-diamond contact for excellent operating stability at elevated temperature A semiconductor device comprising an electrode formed on a semiconductor diamond. The electrode includes a first metal section which is in contact with a surface of the semiconductor diamond and which has a thickness of 100 nm or smaller, and further incl... | 05/26/1998 |
| 5500393 | Method for fabricating a schottky junction The characteristics of a Schottky junction between diamond and metal causes the diode using the Schottky junction to have a large leakage reverse current and n-value far bigger than 1. A surface of diamond on which a Schottky junction shall be formed is p... | 03/19/1996 |
| 5371382 | Amorphous silicon rectifying contact on diamond and method for making same A rectifying contact for use at high temperatures includes a semiconducting diamond layer and a doped amorphous silicon layer thereon. The amorphous silicon layer may be doped with either a p-type or n-type dopant. The semiconducting diamond may be a dope... | 12/06/1994 |
| 5002899 | Electrical contacts on diamond A method for forming ohmic contacts on diamond substrates, where, by irradiating a diamond substrate with radiation having a wavelength in the neighborhood of 193 nm, regions of enhanced electrical conductivity may be formed without substantially heating ... | 03/26/1991 |
