Class 257/E21.043 - Using ion im plantation (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.042. This subclass
No. of patents: 23
Last issue date: 10/07/2008

Number	Title	Issue Date
7432177	Post-ion implant cleaning for silicon on insulator substrate preparation A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of th...	10/07/2008
7348718	Discharge electrode implemented by a wide bandgap semiconductor and a discharge lamp using the same A discharge electrode emitting electrons into a discharge gas, encompasses an emitter and current supply terminals configured to supply electric current to the emitter. The emitter embraces a wide bandgap semiconductor having at 300 K a bandgap of 2.2 eV or wider. A...	03/25/2008
7344964	Image sensor with improved charge transfer efficiency and method for fabricating the same An image sensor includes: a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a first depth from a surface portion of the semiconductor layer; a first spacer formed on each sidewall of the gate structure;...	03/18/2008
7301221	Controlling diffusion in doped semiconductor regions A method and device for reducing a dopant diffusion rate in a doped semiconductor region is provided. The methods and devices include selecting a plurality of impurity elements, including at least one dopant element. Selection of a plurality of impurity elements inc...	11/27/2007
7297617	Method for controlling diffusion in semiconductor regions A method and device for reducing a dopant diffusion rate in a doped semiconductor region is provided. The methods and devices include selecting a plurality of impurity elements, including at least one dopant element. Selection of a plurality of impurity elements inc...	11/20/2007
7271079	Method of doping a gate electrode of a field effect transistor A method of fabricating a structure and fabricating related semiconductor transistors and novel semiconductor transistor structures. The method of fabricating the structure includes: providing a substrate having a top surface; forming an island on the top surface of...	09/18/2007
7262118	Method for generating a structure on a substrate The invention relates to a method for generating very short gate structures. In a method for generating a structure on a substrate in accordance with one embodiment of the invention, first of all a layer sequence of a first oxide layer, a first nitride layer and a s...	08/28/2007
7250312	Doping method and method for fabricating thin film transistor It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non...	07/31/2007
7144795	Method for forming a depletion-mode transistor that eliminates the need to separately set the threshold voltage of the depletion-mode transistor A semiconductor circuit with a depletion-mode transistor is formed with a method that eliminates the need for a separate mask and implant step to set the threshold voltage of the depletion-mode transistor. As a result, the method of the present invention reduces the...	12/05/2006
7135387	Method of manufacturing semiconductor element A method for stably activating pn-successive layers in a semiconductor element in a short time is disclosed. Pulsed beams, each of which has a pulse shape that is approximately rectangular, are projected from respective laser irradiation devices and successively com...	11/14/2006
7128974	Thick single crystal diamond layer method for making it and gemstones produced from the layer This invention relates to diamond and more particularly to diamond produced by chemical vapour deposition (hereinafter referred to as CVD). According to a first aspect of the invention, there is provided a layer of single crystal CVD diamond of high quality having a...	10/31/2006
6376276	Method of preparing diamond semiconductor There is provided a method of reliably preparing a diamond semiconductor by irradiating diamond with a corpuscular ray. In this method, when a diamond substrate is irradiated with a corpuscular ray, the diamond substrate is maintained at a temperature of ...	04/23/2002
6281037	Method for the targeted production of N-type conductive areas in diamond layers by means of ion implantation The invention relates to the production of semiconductor elements made of diamond, diamond layers and diamond-like layers, which are doped using the ion implantation method and on which N-type conductive areas are also placed. According to the invention, ...	08/28/2001
6140148	Method of making a contact to a diamond The invention provides a method of making an ohmic contact to a n-type diamond or an injecting contact to a p-type diamond. The method includes the steps of implanting a surface of the diamond with a n-type dopant atom at a dose just below the amorphisati...	10/31/2000
6109207	Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or ...	08/29/2000
5863831	Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or ...	01/26/1999
5609926	Diamond doping A method of doping diamond with relatively large atoms such as aluminium, phosphorus, arsenic and antimony is provided. The method involves implanting the dopant atoms at a low temperature to create a damaged region of point defects in the form of vacanci...	03/11/1997
5385762	Diamond doping A method of producing a doped diamond, typically a boron doped diamond, is provided. The method involves multiple cold implantation/rapid annealing steps. A doped diamond can be produced containing a high concentration of dopant atoms....	01/31/1995
5382809	Semiconductor device including semiconductor diamond A semiconductor device having an MISFET-like structure. The semiconductor device comprises: an p-type semiconductor diamond layer disposed on an insulating diamond substrate for providing a channel region; and a drain electrode, a source electrode and a g...	01/17/1995
5334283	Process for selectively etching diamond A process for selectively etching a diamond substrate comprising the steps of forming a graphitic area within a diamond substrate and selectively etching the diamond substrate with a gaseous reactant under conditions sufficient to convert the graphitic ar...	08/02/1994
5328855	Formation of semiconductor diamond Semiconductor diamond is formed by a process comprising irradiating diamond crystal with light having irradiation density of more than 0.1 W/cm2, annihilating defects in the diamond crystals, and cleaning the surface of the diamond crystals....	07/12/1994
5309000	Diamond films with heat-resisting ohmic electrodes A is a heat-resisting ohmic electrode on diamond film, including: a p-type semiconducting diamond film; a boron-doped diamond layer provided on the semiconducting diamond film; and an electrode element made of p-type Si selectively formed on the boron-dop...	05/03/1994
5298106	Method of doping single crystal diamond for electronic devices A method of doping diamond by (1) ion implanting carbon into the diamond to create a damage zone of opaque, nondiamond material; (2) ion implanting a semiconductor dopant material that is a pentavalent donor dopant or a trivalent acceptor dopant into the damag...	03/29/1994

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Class 257/E21.043 - Using ion im plantation (EPO)