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Inclining coffin

A coffin, for allowing inclination for display of a deceased person in a natural position.

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Class 257/E21.042 - Making n- or p-doped regions (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.041. This subclass
No. of patents: 7
Last issue date: 05/06/2008


NumberTitleIssue Date
7368317Method of producing an N-type diamond with high electrical conductivity
The invention relates to a method of producing an n-type diamond. The inventive method comprises an n-doping stage during which a donor species is vacuum diffused in a diamond that was initially doped with an acceptor, in order to form donor groups containing the do...
05/06/2008
7329583Method of fabricating isolated semiconductor devices in epi-less substrate
An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does...
02/12/2008
7276794Junction-isolated vias
A process for forming a junction-isolated, electrically conductive via in a silicon substrate and a conductive apparatus to carry electrical signal from one side of a silicon wafer to the other side are provided. The conductive via is junction-isolated from the bulk...
10/02/2007
7144795Method for forming a depletion-mode transistor that eliminates the need to separately set the threshold voltage of the depletion-mode transistor
A semiconductor circuit with a depletion-mode transistor is formed with a method that eliminates the need for a separate mask and implant step to set the threshold voltage of the depletion-mode transistor. As a result, the method of the present invention reduces the...
12/05/2006
6110276Method for making n-type semiconductor diamond
A method for making n-type semiconducting diamond by use of CVD in which n-type impurities are doped simultaneously with the deposition of diamond. As the n-type impurities, an Li compound and a B compound, both, are used at once. After doping, a diamond ...
08/29/2000
5514603Manufacturing method for diamond semiconductor device
A process of forming a semiconductor which allows n type doping to be applied to a diamond semiconductor layer is carried out so as to form a diamond semiconductor layer on a substrate, forming a layer of SiO2 over the diamond semiconductor lay...
05/07/1996
5508208Method of manufacturing diamond semiconductor
In a method of manufacturing diamond semiconductor mainly composed of carbon, a technique is provided which is free from the possibility of destruction of diamond structure, permits n-type doping into diamond and further permits high concentration n-type ...
04/16/1996
 
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