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| Number | Title | Issue Date |
| 7442983 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperat... | 10/28/2008 |
| 7416936 | Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the same The present invention relates to a capacitor having a hafnium oxide and aluminum oxide alloyed dielectric layer and a method for fabricating the same. The capacitor includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode... | 08/26/2008 |
| 7417276 | Thin film capacitor and fabrication method thereof A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are unifor... | 08/26/2008 |
| 7413931 | Semiconductor device manufacturing method The invention is directed to improvement of reliability of a chip size package type semiconductor device in a manufacturing method thereof. A support body is formed on a front surface of a semiconductor substrate with a first insulation film therebetween. Then, a pa... | 08/19/2008 |
| 7393746 | Post-silicide spacer removal A method forms a gate conductor over a substrate, forms spacers (e.g., nitride spacers) on sides of the gate conductor, and implants an impurity into exposed regions of the substrate not protected by the gate conductor and the spacers. Then the method forms a silici... | 07/01/2008 |
| 7393796 | Composite dielectric forming methods and composite dielectrics A composite dielectric forming method includes atomic layer depositing alternate layers of hafnium oxide and lanthanum oxide over a substrate. The hafnium oxide can be thermally stable, crystalline hafnium oxide and the lanthanum oxide can be thermally stable, cryst... | 07/01/2008 |
| 7371633 | Dielectric layer for semiconductor device and method of manufacturing the same A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides. ... | 05/13/2008 |
| 7354849 | Catalytically enhanced atomic layer deposition process A method for carrying out a damascene process to form an interconnect comprises providing a semiconductor substrate having a trench etched into a dielectric layer, wherein the trench includes a barrier layer and an adhesion layer, depositing a copper seed layer onto... | 04/08/2008 |
| 7341948 | Method of making a semiconductor structure with a plating enhancement layer Disclosed is a method of making a semiconductor structure, wherein the method includes forming an interlayer dielectric (ILD) layer on a semiconductor layer, forming a conductive plating enhancement layer (PEL) on the ILD, patterning the ILD and PEL, depositing a se... | 03/11/2008 |
| 7314806 | Methods of forming metal-insulator-metal (MIM) capacitors with separate seed A metal-oxy-nitride seed dielectric layer can be formed on a metal-nitride lower electrode of a metal-insulator-metal (MIM) type capacitor. The metal-oxy-nitride seed dielectric layer can act as a barrier layer to reduce a reaction with the metal-nitride lower elect... | 01/01/2008 |
| 7294544 | Method of making a metal-insulator-metal capacitor in the CMOS process A method for fabricating an improved metal-insulator-metal capacitor is achieved. An insulating layer is provided overlying conducting lines on a semiconductor substrate. Via openings through the insulating layer to the conducting lines are filled with metal plugs. ... | 11/13/2007 |
| 7291530 | Semiconductor storage device and method of manufacturing the same A method of manufacturing a semiconductor storage device having a capacitive element having a dielectric layer having a perovskite-type crystal structure represented by general formula ABO3 and a lower electrode and an upper electrode disposed so as to sa... | 11/06/2007 |
| 7282380 | Method for manufacturing semiconductor device It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor ele... | 10/16/2007 |
| 7276438 | Method of manufacturing wiring substrate A method of manufacturing a wiring substrate of the present invention, includes a step of preparing a substrate containing a semi-cured resin layer or a thermo plastic resin layer, a step of forming a through hole that passes through the substrate, a step of inserti... | 10/02/2007 |
| 7259071 | Semiconductor device with dual gate oxides A method for making a semiconductor device having a first active region and a second active region includes providing first and second isolation structures defining the first active region on a substrate. The first active region uses a first operational voltage, and... | 08/21/2007 |
| 7256144 | Method for forming a metal oxide film A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The meth... | 08/14/2007 |
| 7223685 | Damascene fabrication with electrochemical layer removal The present application discloses process comprising providing a wafer, the wafer comprising an inter-layer dielectric (ILD) having a feature therein, an under-layer deposited on the ILD, and a barrier layer deposited on the under-layer, and a conductive layer depos... | 05/29/2007 |
| 7198999 | Flash memory device having a graded composition, high dielectric constant gate insulator A graded composition, high dielectric constant gate insulator is deposited between a substrate and floating gate in a flash memory cell transistor. If the composition of the gate insulator is closer to the high-k material near the substrate, the electron barrier for... | 04/03/2007 |
| 7192828 | Capacitor with high dielectric constant materials and method of making A stabilized capacitor using non-oxide electrodes and high dielectric constant oxide dielectric materials and methods of making such capacitors and their incorporation into DRAM cells is provided. A preferred method includes providing a non-oxide electrode, oxidizin... | 03/20/2007 |
| 7189626 | Electroless plating of metal caps for chalcogenide-based memory devices A method of forming a metal cap over a conductive interconnect in a chalcogenide-based memory device is provided and includes, forming a layer of a first conductive material over a substrate, depositing an insulating layer over the first conductive material and the ... | 03/13/2007 |
| 7176052 | Capacitor, circuit board, method of formation of capacitor, and method of production of circuit board A method of formation of a capacitor forming part of an electric circuit when producing a circuit board, consisting of forming a valve metal bottom electrode layer and a valve metal oxide dielectric layer on the same, then integrally forming a solid electrolyte laye... | 02/13/2007 |
| 7172947 | High dielectric constant transition metal oxide materials A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a prefer... | 02/06/2007 |
| 7160779 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer that contacts a metal oxide layer. The metal oxide layer is generated by forming a metal layer, then oxidizing the metal layer. ... | 01/09/2007 |
| 7105461 | Composite dielectric forming methods and composite dielectrics A composite dielectric forming method includes atomic layer depositing alternate layers of hafnium oxide and lanthanum oxide over a substrate. The hafnium oxide can be thermally stable, crystalline hafnium oxide and the lanthanum oxide can be thermally stable, cryst... | 09/12/2006 |
| 6699747 | Method for increasing the capacitance in a storage trench In a method for forming a trench capacitor a first layer of silicon oxide is deposited in a storage trench and a layer of silicon is deposited over the first layer by a chemical vapor deposition process. A layer of an oxidizable metal is deposited over th... | 03/02/2004 |
| 6700771 | Decoupling capacitor for high frequency noise immunity Systems and methods are provided for an on-chip decoupling device and method. One aspect of the present subject matter is a capacitor. One embodiment of the capacitor includes a substrate, a high K dielectric layer doped with nano crystals disposed on the... | 03/02/2004 |
| 6696715 | Method and structure for reducing leakage current in capacitors A method of forming a capacitor with reduced leakage current on a substrate in a semiconductor device is set forth. A first layer of a conductive material is formed over the substrate, and a second layer of a dielectric is formed over the first layer. The... | 02/24/2004 |
| 6693051 | Silicon oxide based gate dielectric layer A semiconductor device having a dielectric layer formed between a first and a second conductive layer. The dielectric layer comprising a layer of silicon oxide, SiOXࣘ2, having a dielectric constant greater than about 3.9 and less than or equa... | 02/17/2004 |
| 6693792 | Semiconductor integrated circuits and fabricating method thereof A capacitor having an equivalent thickness of 3.0 nm or less, with a sufficient static capacitance and less leakage current in a reduced size, constituted by stacking an interfacial film 21 having a physical thickness of 2.5 nm or more for suppressing tun... | 02/17/2004 |
| 6686239 | Capacitors of semiconductor devices and methods of fabricating the same A capacitor is disposed on a semiconductor substrate and includes an interlayer dielectric layer pattern with first and second openings, which expose the semiconductor substrate in predetermined regions, respectively. A sidewall and a bottom of the first ... | 02/03/2004 |
| 6682973 | Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, including steps of growing on the silicon substrate an interfacial layer of a silicon-containing dielectric material; and depositing on the interfa... | 01/27/2004 |
| 6682969 | Top electrode in a strongly oxidizing environment An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit.... | 01/27/2004 |
| 6680228 | Capacitor in semiconductor device In the capacitor in a semiconductor device, a nitride film is formed over a lower electrode on a semiconductor substrate, and a TaON film is formed over the nitride film. The Al2 O3 film is formed over the TaON film, and an upper ele... | 01/20/2004 |
| 6677254 | Processes for making a barrier between a dielectric and a conductor and products produced therefrom The formation of a barrier layer over a high k dielectric layer and deposition of a conducting layer over the barrier layer prevents intermigration between the species of the high k dielectric layer and the conducting layer and prevents oxygen scavenging ... | 01/13/2004 |
| 6673668 | Method of forming capacitor of a semiconductor memory device A capacitor having a tantalum-contained-dielectric layer is formed by a fabrication method including the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a f... | 01/06/2004 |
| 6674110 | Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric A single transistor ("1T") ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric. The memory cell of the present invention comprises a substrate, an overlying ferroelectri... | 01/06/2004 |
| 6670256 | Metal oxynitride capacitor barrier layer Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor ... | 12/30/2003 |
| 6664584 | Metal oxynitride capacitor barrier layer Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor ... | 12/16/2003 |
| 6664583 | Metal oxynitride capacitor barrier layer Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor ... | 12/16/2003 |
| 6664116 | Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides A method of forming a ferroelectric thin film on a high-k layer includes preparing a silicon substrate; forming a high-k layer on the substrate; depositing a seed layer of ferroelectric material at a relatively high temperature on the high-k layer; deposi... | 12/16/2003 |
