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| Number | Title | Issue Date |
| 7442603 | Self-aligned structure and method for confining a melting point in a resistor random access memory A process in the manufacturing of a resistor random access memory with a confined melting area for switching a phase change in the programmable resistive memory. The process initially formed a pillar comprising a substrate body, a first conductive material overlying... | 10/28/2008 |
| 7439147 | Resistor of semiconductor device and method for fabricating the same A resistor for a semiconductor device is provided. The resistor can include a first polysilicon layer formed on a semiconductor substrate; an insulating layer formed on regions of the first polysilicon layer; a second polysilicon layer formed on the insulating layer... | 10/21/2008 |
| 7432123 | Methods of manufacturing high temperature thermistors A method of manufacturing high temperature thermistors. A polycrystalline thermistor body is formed from a material selected from a list consisting of bulk polycrystalline Si with intrinsic conductivity and bulk polycrystalline Ge with intrinsic conductivity. At lea... | 10/07/2008 |
| 7416951 | Thin film resistors integrated at two different metal interconnect levels of single die An integrated circuit includes a first thin film resistor on a first dielectric layer. A first layer of interconnect conductors on the first dielectric layer includes a first and second interconnect conductors electrically contacting the first thin film resistor. A ... | 08/26/2008 |
| 7408249 | Packaged integrated circuits and methods of producing thereof A packaged integrated circuit and method for producing thereof, including an integrated circuit substrate lying in a substrate plane and having electrical circuitry formed thereon, a package enclosing the integrated circuit substrate and defining first and second pl... | 08/05/2008 |
| 7387938 | Methods of forming phase change storage cells for memory devices Storage cells for a phase change memory device and phase change memory devices are provided that include a first phase change material pattern and a first high-resist phase change material pattern on the first phase change material pattern. The first high-resist pha... | 06/17/2008 |
| 7372127 | Low cost and versatile resistors manufactured from conductive loaded resin-based materials Resistor devices are formed of a conductive loaded resin-based material. The conductive loaded resin-based material comprises micron conductive powder(s), conductive fiber(s), or a combination of conductive powder and conductive fibers in a base resin host. The cond... | 05/13/2008 |
| 7332402 | Method for optically trimming electronic components Methods for adjusting the bulk material properties of manufactured components, such as resistors, thermistors, varistors, capacitors, resonators, oscillators, and optical components. Adjustment of the resistance of a resistor can be achieved by directing a high ener... | 02/19/2008 |
| 7306967 | Method of forming high temperature thermistors A method of manufacturing high temperature thermistors from an ingot. The high temperature thermistors can be comprised of germanium or silicon. The high temperature thermistors have at least one ohmic contact. ... | 12/11/2007 |
| 7306552 | Semiconductor device having load resistor and method of fabricating the same A semiconductor device includes a semiconductor substrate having a resistor region, an isolation layer disposed in the resistor region, the isolation layer defining active regions, first conductive layer patterns disposed on the active regions, a second conductive l... | 12/11/2007 |
| 7306999 | High voltage sensor device and method therefor In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element. ... | 12/11/2007 |
| 7303972 | Integrated thin-film resistor with direct contact A BEOL thin-film resistor adapted for flexible integration rests on a first layer of ILD. The thickness of the first layer of ILD and the resistor thickness combine to match the nominal design thickness of vias in the layer of concern. A second layer of ILD matches ... | 12/04/2007 |
| 7300807 | Structure and method for providing precision passive elements A circuit having a precision passive circuit element, such as a resistor or a capacitor, with a target value of an electrical parameter is fabricated on a substrate with a plurality of independent parallel-connected passive circuit elements. The plurality of passive... | 11/27/2007 |
| 7253074 | Temperature-compensated resistor and fabrication method therefor A method for forming a temperature-compensated resistor on a semiconductor substrate is provided. A resistor element is formed on the semiconductor substrate. Terminal contacts are formed on the ends of the resistor element. A temperature-compensating configuration ... | 08/07/2007 |
| 7247896 | Semiconductor devices having a field effect transistor and methods of fabricating the same A semiconductor device having a field effect transistor and a method of forming the same are provided. The semiconductor device preferably includes a device active pattern disposed on a predetermined region of the substrate. The gate electrode preferably crosses ove... | 07/24/2007 |
| 7241663 | Maskless multiple sheet polysilicon resistor The present invention facilitates semiconductor fabrication of semiconductor devices having polysilicon resistors. An oxide layer is formed over a semiconductor device (104). A polysilicon layer is formed on the oxide layer (106). The polysilicon layer... | 07/10/2007 |
| 7238582 | Semiconductor device and process of producing the same The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same... | 07/03/2007 |
| 7238584 | Methods of fabricating integrated circuit devices having resistors with different resistivities therein Methods of forming integrated circuit devices include forming patterned layers having different resistivities on semiconductor substrates. These methods include forming a first electrically conductive layer having a first resistivity on first and second portions of ... | 07/03/2007 |
| 7232751 | Semiconductor device and manufacturing method therefor According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced ... | 06/19/2007 |
| 7223668 | Method of etching metallic thin film on thin film resistor An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and ope... | 05/29/2007 |
| 7217981 | Tunable temperature coefficient of resistance resistors and method of fabricating same Tunable TCR resistors incorporated into integrated circuits and a method fabricating the tunable TCR resistors. The tunable TCR resistors including two or more resistors of two or more different materials having opposite polarity and different magnitude TCRs, the sa... | 05/15/2007 |
| 7208388 | Thin film resistor head structure and method for reducing head resistivity variance A method of making integrated circuit thin film resistor includes forming a first dielectric layer (18B) over a substrate and providing a structure to reduce variation of head resistivity thereof by forming a dummy fill layer (9A) on the first dielectr... | 04/24/2007 |
| 7196398 | Resistor integration structure and technique for noise elimination A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between t... | 03/27/2007 |
| 7183170 | Manufacturing method of semiconductor device After an upper electrode protective film is formed such that it is in a firm contact with ruthenium film of the upper electrode without damaging the ruthenium film, the upper electrode is etched, thereby, a MIM capacitor is obtained in which leak current is not incr... | 02/27/2007 |
| 7151038 | Semiconductor device having an integral resistance element A resistance element of a semiconductor device includes a first resistance pattern and a second resistance pattern formed adjacent to the first resistance pattern at a lower level, wherein the second resistance pattern is defined by the first resistance pattern in a... | 12/19/2006 |
| 7148116 | Semiconductor device with load resistor and fabrication method A semiconductor device with a load resistor is manufactured such that a contact is formed at both ends of the load resistor, and at least one contact is formed between the contacts, in order to prevent impurities from being generated within each contact while the co... | 12/12/2006 |
| 7145234 | Circuit carrier and package structure thereof A circuit carrier and a package structure thereof are provided. The circuit carrier comprises a substrate having a surface, a plurality of passive component electrode pads or a plurality of passive component electrode planes on the surface of the substrate for elect... | 12/05/2006 |
| 7135367 | Manufacturing method of semiconductor device A silicon oxide film as an insulating film is accumulated so as to cover a whole surface of a silicon substrate including a surface of a resistance element by, for example, a thermal CVD method, just after a resist pattern is removed. This silicon oxide film is proc... | 11/14/2006 |
| 7122436 | Techniques for forming passive devices during semiconductor back-end processing Fabrication of electronic devices in the “metal layers” of semiconductor devices. Each metal layer includes a dielectric layer that supports a conductive layer, which includes electrically conductive pathways and electronic devices. The metal layers are stacked ... | 10/17/2006 |
| 7087978 | Semiconductor resistor with improved width accuracy The accuracy of the width measurement of a semiconductor resistor is improved by modifying the gate mask of a standard MOS transistor fabrication process to form an opening between regions of polysilicon that are used as a mask when the substrate or well material is... | 08/08/2006 |
| 6700474 | High value polysilicon resistor A resistor structure is disclosed that is constructed out of two layers of polysilicon. The intrinsic device is made using the top layer which is either a dedicated deposition, or formed as part of an existing process step such as a base epi growth in a B... | 03/02/2004 |
| 6700203 | Semiconductor structure having in-situ formed unit resistors An electronic structure that has in-situ formed unit resistors and a method for fabricating such structure are disclosed. The electronic structure that has in-situ formed unit resistors consists of a first plurality of conductive elements formed in an ins... | 03/02/2004 |
| 6696719 | Semiconductor device with improved peripheral resistance element and method for fabricating same A semiconductor device in which a cell capacitor with an MIM or MIS structure is formed using a conductive material with a low resistivity for the upper electrode and a resistance element is formed using a conductive material with high resistance without ... | 02/24/2004 |
| 6696916 | Integrated vertical resistor structure with reduced dimensions, for high voltage, and manufacturing process thereof The high-voltage resistor is of the vertical type, and is formed in a chip which includes a high-voltage region and a low-voltage region superimposed on the high-voltage region, both having a first conductivity type. An isolation region, at least partiall... | 02/24/2004 |
| 6690083 | Use of silicide blocking layer to create high valued resistor and diode for sub-1V bandgap The present invention is drawn to a method and a system for creating a sub-1V bandgap reference (BGR) circuit. In particular, a sub-1V BGR circuit is formed comprising a shallow trench isolation (STI) region and a poly silicon region above said STI region... | 02/10/2004 |
| 6680489 | Amorphous silicon carbide thin film coating Amorphous silicon carbide thin film structures, including: protective coatings for windows in infrared process stream monitoring systems and sensor domes, heated windows, electromagnetic interference shielding members and integrated micromachined sensors;... | 01/20/2004 |
| 6667538 | Semiconductor device having semiconductor resistance element and fabrication method thereof A semiconductor device having a semiconductor resistance element is capable of suppressing a variation in characteristics of the semiconductor resistance element due to an acceptor concentration which is difficult to control, thereby stably improving the ... | 12/23/2003 |
| 6667523 | Highly linear integrated resistive contact A semiconductor device or integrated circuit has high and low resistive contacts. Mobility spoiling ions such as carbon are implanted into all contacts of the substrate. High resistive contacts are temporarily covered with an oxide during processing to pr... | 12/23/2003 |
| 6660664 | Structure and method for formation of a blocked silicide resistor A process of forming a nitride film on a semiconductor substrate including exposing a surface of the substrate to a rapid thermal process to form the nitride film.... | 12/09/2003 |
| 6661095 | Semiconductor device The structure around a high-resistance element is formed in mirror symmetry to a plane perpendicular to a semiconductor substrate and the surface of the sheet. Specifically, high-resistance element, contact plugs and extending portion of interconnection l... | 12/09/2003 |
