Did You Know...
...that Charles Goodyear performed some of his experiments on rubber while in debtor's prison? He was there so often he referred to it as his "hotel". Chronically in debt because of poor business sense and ill health, Goodyear depended on the generosity of friends and family. Even after he unlocked the secret to vulcanizing rubber, he was unable to improve his financial situation. When he died, his estate was $200,000 in debt.
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| Number | Title | Issue Date |
| 7323724 | Nitride semiconductor device A nitride semiconductor device includes a semiconductor layer, a first electrode for establishing an ohmic contact disposed on the semiconductor layer, and a second electrode on the first electrode, having a different shape from that of the first electrode. A joint ... | 01/29/2008 |
| 7319248 | High brightness light emitting diode The present invention discloses a high brightness light emitting diode. The light emitting diode primarily includes a permanent substrate, a reflective mirror formed on said permanent substrate, an n-type cladding layer formed on said reflective mirror, and defining... | 01/15/2008 |
| 7315048 | Method and apparatus for mixing light emitted by a plurality of solid-state light emitters In one embodiment, light emitted by a plurality of solid-state light emitters is mixed by mounting the plurality of solid-state light emitters on a transparent to translucent substrate so that they primarily emit light away from the substrate. The light emitters are... | 01/01/2008 |
| 7312474 | Group III nitride based superlattice structures A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride... | 12/25/2007 |
| 7294862 | Photonic crystal light emitting device A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of se... | 11/13/2007 |
| 7294200 | Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride semiconductor on a substrate; a step (b) for forming a nitride semico... | 11/13/2007 |
| 7285801 | LED with series-connected monolithically integrated mesas A light emitting semiconductor device die (10, 110, 210, 310) includes an electrically insulating substrate (12, 112). First and second spatially separated electrodes (60, 62, 260, 262, 360, 362) are disposed on the electrically insulating subst... | 10/23/2007 |
| 7282744 | III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier A III-nitride electronic device structure including doped material, an active region and a barrier material arranged to suppress transport of dopant from the doped material into the active region, wherein the barrier material comprises high-Al content Alx... | 10/16/2007 |
| 7276742 | Compound semiconductor light emitting device and its manufacturing method A compound semiconductor light emitting device for preparing a chip which improves the light extraction efficiency, enables mounting of easy positioning with only once wire bonding, and leads to a reduction in the manhour. One face of an insulative substrate (11 | 10/02/2007 |
| 7276735 | Laminated semiconductor substrate and optical semiconductor element A low-cost high-property optical semiconductor element for a long wavelength is provided, using a GaAs substrate. The optical semiconductor element comprises a substrate of GaAs having a first surface and a second surface opposite to each other, a buffer layer of In... | 10/02/2007 |
| 7273663 | White OLED having multiple white electroluminescence units A tandem white OLED device includes an anode, a cathode, and a plurality of organic electroluminescence units disposed between the anode and the cathode, wherein each organic electroluminescence unit includes at least one light-emitting layer, and wherein each organ... | 09/25/2007 |
| 7271422 | Semiconductor optical device In a semiconductor optical device, a first conductive type semiconductor region includes first and second semiconductor portions. The first and second semiconductor portions are made of nitride mixed semiconductor crystal. This first semiconductor portion has a firs... | 09/18/2007 |
| 7271418 | Semiconductor apparatus for white light generation and amplification The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up multi-wavelength quantum wells and by side-injecting a current. And, ... | 09/18/2007 |
| 7271020 | Light emitting diode covered with a reflective layer and method for fabricating the same A light emitting diode (LED) covered with a reflective layer by imprinting process is provided. The imprinting process includes coating a plastic layer on a mold to form an imprinting substrate; coating a reflective layer on the plastic layer and modifying the shape... | 09/18/2007 |
| 7271416 | Strain compensated semiconductor structures Semiconductor structure and method of fabricating a semiconductor structure are provided that include a substrate having a first in-plane unstrained lattice constant, a first layer comprising a first semiconductor material on the substrate and having a second in-pla... | 09/18/2007 |
| 7268372 | Vertical GaN light emitting diode and method for manufacturing the same Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on... | 09/11/2007 |
| 7264378 | Power surface mount light emitting die package A light emitting die package is disclosed. The die package includes a substrate, a reflector plate, and a lens. The substrate is made from thermally conductive but electrically insulating material. The substrate has traces for connecting an external electrical power... | 09/04/2007 |
| 7260137 | Vertical-cavity surface-emission type laser diode and fabrication process thereof A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination la... | 08/21/2007 |
| 7259396 | Light source with a light-emitting element The invention relates to a light source comprising a light-emitting element, which emits light in a first spectral region, and comprising a luminophore, which comes from the group of alkaline-earth orthosilicates and which absorbs a portion of the light emitted by t... | 08/21/2007 |
| 7259404 | Light-emitting semiconductor component having layers predominantly containing elements of periodic table group II and VI A light-emitting semiconductor component has a number of layers that predominantly contain elements of groups II and VI of the Periodic Table. The layers are applied epitaxially on a substrate, preferably made of InP, and include a p-doped covering layer and an n-do... | 08/21/2007 |
| 7259406 | Semiconductor optical element A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InG... | 08/21/2007 |
| 7253015 | Low doped layer for nitride-based semiconductor device A repeatable and uniform low doped layer is formed using modulation doping by forming alternating sub-layers of doped and undoped nitride semiconductor material atop another layer. A Schottky diode is formed of such a low doped nitride semiconductor layer disposed a... | 08/07/2007 |
| 7253450 | Light-emitting device A foam-holding body 52 having a large difference in refractive index between foams 521 and the surrounding material is disposed on the major light extraction surface of the sapphire substrate 50. The foam-holding body 52 has translucency ... | 08/07/2007 |
| 7242025 | Radiation emitting semiconductor component having a nitride compound semiconductor body and a contact metallization layer on its surface A radiation-emitting semiconductor component has a semiconductor body containing a nitride compound semiconductor, and a contact metallization layer disposed on a surface of the semiconductor body. In this case, the contact metallization layer is covered with a radi... | 07/10/2007 |
| 7235160 | Hollow cathode sputtering apparatus and related method The present invention provides an improved hollow cathode method for sputter coating a substrate. The method of the invention comprises providing a channel for gas to flow through, the channel defined by a channel defining surface wherein one or more portions of the... | 06/26/2007 |
| 7230263 | Gallium nitride compound semiconductor element In a gallium nitride semiconductor device comprising an active layer made of an n-type gallium nitride semiconductor that includes In and is doped with n-type impurity and a p-type cladding layer made of a p-type gallium nitride semiconductor that includes Al and is... | 06/12/2007 |
| 7220683 | Transparent amorphous carbon structure in semiconductor devices A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for di... | 05/22/2007 |
| 7217947 | Semiconductor light source and method of making A solid state light emitting device having a plurality of semiconductor finger members with side walls perpendicular to a substrate. Multiple quantum wells are formed on the side walls, and are also perpendicular to the substrate. Each multiple quantum well is sandw... | 05/15/2007 |
| 7217641 | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby More specifically, gallium nitride semiconductor layers may be fabricated by etching an underlying gallium nitride layer on a sapphire substrate, to define at least one post in the underlying gallium nitride layer and at least one trench in the underlying gallium ni... | 05/15/2007 |
| 7208770 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 04/24/2007 |
| 7208752 | Structure and manufacturing of gallium nitride light emitting diode A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semic... | 04/24/2007 |
| 7208762 | Semiconductor device and manufacturing method thereof A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at l... | 04/24/2007 |
| 7208338 | Method of manufacturing semiconductor light emitting device A method of manufacturing a ridge type semiconductor light emitting device includes: a process of epitaxially growing a multi-layered semiconductor layer having at least a first conductive type cladding layer, an active layer, a second conductive type first cladding... | 04/24/2007 |
| 7205576 | Light emitting device and method of manufacturing the same A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successive... | 04/17/2007 |
| 7196348 | GaN system semiconductor light emitting device excellent in light emission efficiency and light extracting efficiency Although there is provided a high light transmittance of an emitted light by a ITO electrode film conventionally employed, there occurs a formation of a Schottky type contact between the ITO electrode film and a p type GaN system semiconductor layer, thus resulting ... | 03/27/2007 |
| 7195993 | Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocati... | 03/27/2007 |
| 7196950 | Non-volatile semiconductor storage device performing ROM read operation upon power-on A power-on reset circuit has a power-on level detecting circuit which detects a power voltage to output a power-on reset signal and a delay circuit which delays the power-on reset signal output by the power-on level detecting circuit. Two chip address specifying pad... | 03/27/2007 |
| 7193248 | LED backlighting system A liquid crystal display (LCD) device having non-white and white light emitting diodes and a liquid crystal display. A spectrum converting material is positioned between non-white LEDs and the LCD to convert the non-white light from the LEDs toward a white light spe... | 03/20/2007 |
| 7193236 | Light emitting device using nitride semiconductor and fabrication method of the same A nitride based 3-5 group compound semiconductor light emitting device comprising: a substrate; a buffer layer formed above the substrate; a first In-doped GaN layer formed above the buffer layer; an InxGa1—xN/InyGa... | 03/20/2007 |
| 7193249 | Nitride-based light emitting device and method of manufacturing the same Provided are a nitride-based light emitting device using a p-type conductive transparent thin film electrode layer and a method of manufacturing the same. The nitride-based light emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cla... | 03/20/2007 |
