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| Number | Title | Issue Date |
| 7119361 | Luminescence stabilization of anodically oxidized porous silicon layers A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a prote... | 10/10/2006 |
| 7119372 | Flip-chip light emitting diode A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A re... | 10/10/2006 |
| 7119373 | Sled A non-lasing superluminescent light emitting diode (SLED) comprises a semiconductor heterostructure forming a PN junction and a waveguide defining an optical beam path. The heterostructure includes a gain region and an absorber region in series with the gain region ... | 10/10/2006 |
| 7118932 | Method of manufacturing waveguide type optical element and integrated optical waveguide type element using waveguide type optical element A method of manufacturing a waveguide type optical element wherein Zn is selectively diffused on a light absorption layer using an undoped InP layer. Since an impurity diffusion area is made on the light absorption layer under a ridge part, a depletion layer becomes... | 10/10/2006 |
| 7115167 | Method of growing a semiconductor multi-layer structure The invention provides a method of growing an (In, Ga)N multiplayer structure by molecular beam epitaxy. Each GaN or InGaN layer in the multilayer structure is grown at a substrate temperature of at least 650° C., and this provides improved material quality. Ammoni... | 10/03/2006 |
| 7115909 | Light emitting device and method of manufacturing the same Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor laye... | 10/03/2006 |
| 7115910 | Multicolor photodiode array and method of manufacturing thereof Novel structures of the photodetector having broad spectral ranges detection capability (from UV to 1700 nm (and also 2500 nm)) are provided. The photodetector can offer high quantum efficiency >95% over wide spectral ranges, high frequency response >8.5 GHz. The ph... | 10/03/2006 |
| 7115915 | Light-emitting diode A light-emitting diode (LED) is described. The light-emitting diode comprises a metal substrate, a reflective layer, a first transparent conductive layer, an illuminant epitaxial structure and a second transparent conductive layer stacked in sequence, and an electro... | 10/03/2006 |
| 7115917 | Light emitting-diode chip and a method for producing same An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence (3) is provided on substantially the full area of its p-side (9) with a reflective, bondable p-contact layer (6). The substrate ( | 10/03/2006 |
| 7112825 | Semiconductor light emitting device A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface while a current diffusing elect... | 09/26/2006 |
| 7109529 | Light-emitting semiconductor device using group III nitride compound A flip chip type of light-emitting semiconductor device using group III nitride compound includes a thick positive electrode. The positive electrode, which is made of at least one of silver (Ag), rhodium (Rh), ruthenium (Ru), platinum (Pt) and palladium (Pd), and an... | 09/19/2006 |
| 7109527 | Semiconductor chip for optoelectronics and method for production thereof A semiconductor chip, particularly a radiation-emitting semiconductor chip, comprises an active thin-film layer in which a photon-emitting zone is formed, and a carrier substrate for the thin-film layer is arranged at a side of the thin-film layer faces away from th... | 09/19/2006 |
| 7109049 | Method for fabricating a nitride semiconductor light-emitting device Provided is a method for fabricating a nitride semiconductor light-emitting device including a nitride semiconductor substrate having a groove and a ridge formed on the top surface thereof so as to extend in the shape of stripes and a nitride semiconductor growth la... | 09/19/2006 |
| 7109526 | Semiconductor optical device on an indium phosphide substrate for long operating wavelengths A semiconductor optical device such as a laser or semiconductor optical amplifier (SOA) based on an indium phosphide substrate or equivalent buffer layer. The active layer of the device is based on conventional InGaAs(P) alloy, but additionally includes N in order t... | 09/19/2006 |
| 7109525 | Point source light-emitting diode A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a patter... | 09/19/2006 |
| 7105861 | Electronic device contact structures Electronic device contact structures are disclosed. ... | 09/12/2006 |
| 7105857 | Nitride semiconductor device comprising bonded substrate and fabrication method of the same A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 | 09/12/2006 |
| 7105850 | GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivity Disclosed is a GaN LED structure with a p-type contacting layer using Al—Mg-codoped In1−yGayN grown at low temperature, and having low resistivity. The LED structure comprises, from the bottom to top, a substrate, a buffer layer, an n-type ... | 09/12/2006 |
| 7101444 | Defect-free semiconductor templates for epitaxial growth A semiconductor device includes at least one defect-free epitaxial layer. At least a part of the device is manufactured by a method of fabrication of defect-free epitaxial layers on top of a surface of a first solid state material having a first thermal evaporation ... | 09/05/2006 |
| 7102158 | Light-based system for detecting analytes Device, kit and method of using same to detect analytes such as nucleic acids are described. An excitation source, preferably a nitride-based LED, emits light capable of being absorbed by luminophores. Sensors are stably attached, preferably via covalent or ionic bo... | 09/05/2006 |
| 7102175 | Semiconductor light-emitting device and method for fabricating the same Projections/depressions of a two-dimensional periodic structure are formed in a p-GaN layer (4) such that the period of the projections/depressions is 1 to 20 times the wavelength of light radiated from an active layer (3) in a semiconductor. As a resu... | 09/05/2006 |
| 7102174 | Light emitting device and light emitting device module The present invention discloses a light emitting device comprising a substrate transparent at the emission wavelength and an active layer structure formed on such substrate, in which the thickness of the substrate is 75 μm or less, and/or a layer for suppressing sp... | 09/05/2006 |
| 7099363 | Surface-emitting laser with a low threshold value and low power consumption and method of manufacturing the same A surface-emitting laser has a lower multilayer film reflecting mirror, an active layer, a current confinement layer, a clad layer, an upper multilayer film reflecting mirror, and an upper electrode formed in the order described on the upper surface of a substrate h... | 08/29/2006 |
| 7097920 | Group III nitride based semiconductor substrate and process for manufacture thereof To provide a semiconductor substrate of a group III nitride with a little warp, this invention provides a process comprising such steps of: epitaxial-growing a GaN layer 33 with a GaN low temperature grown buffer layer 32... | 08/29/2006 |
| 7095334 | Strip LED light assembly for motor vehicle A light emitting diode (LED) warning signal light, the warning signal light comprising a plurality of light sources constructed and arranged with a reflector or cullminator, the LED light source being in electrical communication with a controller and a power supply,... | 08/22/2006 |
| 7095765 | Light emitter with a voltage dependent resistor layer A light emitter includes an emitting stack, a first electrode, a second electrode and a voltage dependent resistor layer. The emitter stack has a first surface area and a second surface area. The first electrode is formed on the first surface area of the emitting st... | 08/22/2006 |
| 7095766 | Mechanical protection for semiconductor edge-emitting ridge waveguide lasers A high-speed, directly modulated ridge waveguide laser includes: a ridge structure at a junction surface of the laser chip; and a plurality of pads only on non-active areas of the junction surface, where the plurality of pads protrude beyond an edge of the ridge str... | 08/22/2006 |
| 7095062 | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the no... | 08/22/2006 |
| 7095052 | Method and structure for improved LED light output The efficiency of LEDs is increased by incorporating multiple active in series separated by tunnel junction diodes. This also allows the LEDs to operate at longer wavelengths. ... | 08/22/2006 |
| 7095057 | Semiconductor laser and method for manufacturing the same Provided is a semiconductor laser including a substrate etched into a mesa structure, an active layer, clad layers, a current blocking layer, an etch-stop, an ohmic contact layer, and electrodes, and a method for manufacturing the same, whereby it is possible to imp... | 08/22/2006 |
| 7095059 | Group III nitride compound semiconductor device The present invention provides a Group III nitride compound semiconductor device in which the amount of a current allowed to be applied on a p-type pad electrode can be increased. That is, in the Group III nitride compound semiconductor device according to th... | 08/22/2006 |
| 7095768 | Index guided VCSEL and method of fabrication A reliable high frequency VCSEL includes a lower distributed Bragg reflector (DBR), an active region, and an upper DBR. A cylindrical volume is etched from the upper DBR to define a mesa with a lower surface of the cylindrical volume forming an angle greater than ni... | 08/22/2006 |
| 7095041 | High-efficiency light emitting diode A high-efficiency light emitting diode is provided. The light emitting diode includes a substrate; a first compound semiconductor layer formed on the top surface of the substrate; a first electrode formed on a region of the first compound semiconductor layer; an act... | 08/22/2006 |
| 7095042 | Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same A semiconductor light emitting device including a p-type electrode structure and having a low contact resistance and high reflectance is provided. The semiconductor light emitting device includes a transparent substrate, an electron injection layer having first and ... | 08/22/2006 |
| 7095051 | Nitride semiconductor element In a nitride semiconductor device having an active layer 12 between a first electrically conductive type of layer and a second electrically conductive type of layer, a quantum well structure is adopted in which an active layer 12 has at least a well la... | 08/22/2006 |
| 7091524 | Semiconductor device and method for fabricating the same A semiconductor device has a substrate, a first Group III nitride semiconductor layer formed on the substrate, a first oxide layer formed in proximity to the upper portions of defects present in the first Group III nitride semiconductor layer, and a second Group III... | 08/15/2006 |
| 7091525 | Apparatus for producing a display unit A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by t... | 08/15/2006 |
| 7091526 | Light emitting device and method of fabricating the same A light emitting device 100 has a light emitting layer portion 9 which comprises an active layer 5 composed of an MgxZn1-xO-type oxide semiconductor, a p-type cladding layer 6 again composed of an MgxZn | 08/15/2006 |
| 7092422 | Self-pulsation type semiconductor laser In a self-pulsation type semiconductor laser, a first clad layer of a first conductivity type, an active layer, and a second clad layer of a second conductivity type having a striped ridge portion are successively stacked on a semiconductor substrate of the first co... | 08/15/2006 |
| 7087449 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substr... | 08/08/2006 |
