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Walt Disney was no Mickey Mouse inventor. He devised a serious animation camera which he patented. With the device, his company created "Snow White".
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| Number | Title | Issue Date |
| 4116733 | Vapor phase growth technique of III-V compounds utilizing a preheating step In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40° to 60° C. lower than the temperat... | 09/26/1978 |
| 4115164 | Method of epitaxial deposition of an AIII BV -semiconductor layer on a germanium substrate The method makes possible the manufacture of luminescence diodes on the basis of GaAsP or other ternary semiconductor layers deposited on a Ge substrate of n-type conductivity, followed by a zinc diffusion. In the method, a resist layer is deposited on th... | 09/19/1978 |
| 4115150 | Method of producing optoelectronic devices with control of light propagation In an optoelectronic device, light is restrained from propagating in one or both confining layers on either side of an active layer by forming one or more photonabsorbing barriers in one, or both, confining layers. A photon absorbing barrier can be formed... | 09/19/1978 |
| 4086608 | Light emitting diode A light emitting diode with emission wavelength in the 1.06μm region suitable for use with the 1.06μm transmission window in optical fibers. The diode is fabricated by liquid phase epitaxial growth of p and n type InAsx P1-x layers... | 04/25/1978 |
| 4080617 | Optoelectronic devices with control of light propagation In an optoelectronic device, light is restrained from propagating in one or both confining layers on either side of an active layer by forming one or more photon absorbing barriers in one, or both, confining layers. A photon absorbing barrier can be forme... | 03/21/1978 |
| 4062035 | Luminescent diode A semiconductor luminescent device is disclosed of the MIS type which has a semiconductor body, a semiconductor monocrystalline insulating layer on one surface of the body and an electrode on the outer major surface of the insulating layer, which electrod... | 12/06/1977 |
| 4049994 | Light emitting diode having a short transient response time A body of semiconductor material of an electroluminescent device is on a gallium arsenide substrate of N type conductivity. The body includes a first region of N type conductivity aluminum gallium arsenide contiguous to a surface of the substrate and a se... | 09/20/1977 |
| 4024559 | Electroluminescent diodes and a method of manufacturing same The present invention relates to a novel electroluminescent diode. Said diode comprises, inserted in one of the elements of the junction, a zone of the same conductivity type as said element and forming a junction with the other element. Said zone has a f... | 05/17/1977 |
| 4013918 | Electroluminescent diode having threshold effect A monolithic electroluminescent semiconductor device comprising a monocrystalline semiconductor body having a major surface; a semiconductor zone which extends along a part of said major surface of said semiconductor body, said zone adjoining a portion of... | 03/22/1977 |
| 3990096 | Semiconductor luminescent device The disclosed semiconductor luminescent device comprises a semiconductive body including a first semiconductor layer formed of a first semiconductive material and sandwiched between a second and a third semiconductor layer formed of a second semiconductiv... | 11/02/1976 |
| 3965347 | Electroluminescent semiconductor diode with hetero-structure An electroluminescent semiconductor diode having a homogeneous monocrystalline semiconductor substrate providing a first zone on which an epitaxial layer has been formed providing a second zone. This second zone has a forbidden-band-width which changes st... | 06/22/1976 |
| 3963538 | Two stage heteroepitaxial deposition process for GaP/Si A process for producing light emitting diodes is disclosed. In the process a primer layer of GaP is pyrolytically deposited on a Si substrate with the resulting epitaxial film thickness being sufficient to form complete coalescence of the epitaxial nuclei... | 06/15/1976 |
| 3963539 | Two stage heteroepitaxial deposition process for GaAsP/Si LED's A process for producing light emitting diodes is disclosed. In the process a primer layer of GaP is pyrolytically deposited on a Si substrate with the resulting epitaxial film thickness being sufficient to form complete coalescence of the epitaxial nuclei... | 06/15/1976 |
| 3935040 | Process for forming monolithic semiconductor display A process for producing light emitting diodes is disclosed. In the process a major planar surface of a single crystal silicon wafer is modified to acceptably match the crystallographic lattice constant of a preselected electroluminescent single crystal se... | 01/27/1976 |
