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| Number | Title | Issue Date |
| 7488988 | Light emitting device and method of forming the same A light emitting device includes a substrate and an adhesive layer on the substrate. At least two multi-layer epitaxial structures are on the substrate. Each structure sequentially includes an upper cladding layer, an active layer, a lower cladding layer, an ohmic c... | 02/10/2009 |
| 7476909 | Light emitting device A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first... | 01/13/2009 |
| 7449722 | Semiconductor light emitting element A semiconductor light emitting element has a first conductive-type cladding layer, an undoped active layer, a second conductive-type cladding layer, and a second conductive-type current spreading layer that are formed on a first conductive-type semiconductor substra... | 11/11/2008 |
| 7442964 | Photonic crystal light emitting device with multiple lattices A semiconductor light emitting device includes a photonic crystal structure that is a lattice of holes in the semiconductor layers. The photonic crystal structure includes multiple lattices. In some embodiments, the device includes a first lattice formed on a first ... | 10/28/2008 |
| 7442569 | Vertical GaN-based LED and method of manufacturing the same Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electr... | 10/28/2008 |
| 7439546 | Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semic... | 10/21/2008 |
| 7432535 | Semiconductor light emitting device A semiconductor light emitting device includes a hetero-configuration having an active layer, a first clad layer, and a second clad layer, the active layer being interposed between the clad layers. The active layer emits light when charge carriers are injected. The ... | 10/07/2008 |
| 7432531 | Semiconductor device A semiconductor device, which can accurately control carrier density, includes: a single crystal substrate; a semiconductor layer which is made of hexagonal crystal with 6 mm symmetry and is formed on the single crystal substrate; a source electrode, a drain electro... | 10/07/2008 |
| 7432523 | Semiconductor composite device, LED head that employs the semiconductor composite device, and image forming apparatus that employs the LED head A semiconductor composite apparatus includes a semiconductor thin film and a metal layer formed on a substrate. The semiconductor thin film is bonded to the metal layer formed on the substrate. A region is formed between the semiconductor thin film and the metal sur... | 10/07/2008 |
| 7429755 | High power light emitting diode A high power LED comprises a substrate. An N-type semiconductor layer, an active layer and a P-type semiconductor layer are sequentially deposited on the substrate. A semi-insulator layer or a non-N-type semiconductor layer can be interposed between the N-type semic... | 09/30/2008 |
| 7423284 | Light emitting device, method for making the same, and nitride semiconductor substrate A light-emitting device includes a GaN substrate; a n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate compared to the n-type A... | 09/09/2008 |
| 7420204 | Organic transistor An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode... | 09/02/2008 |
| 7420998 | Semiconductor laser device A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film only on the front surface electrode and made of a material that does not react with Au, and a coating film that cove... | 09/02/2008 |
| 7408199 | Nitride semiconductor laser device and nitride semiconductor device A nitride semiconductor laser device comprises, on a principle face of a nitride semiconductor substrate: a nitride semiconductor layer having a first conductivity type; an active layer comprising indium, and a nitride semiconductor layer having a second conductivit... | 08/05/2008 |
| 7402838 | Nitride semiconductor device According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contr... | 07/22/2008 |
| 7397069 | Semiconductor device A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prev... | 07/08/2008 |
| 7393411 | β-GaOsingle crystal growing method, thin-film single crystal growing method, GaOlight-emitting device, and its manufacturing method A method for growing a β-Ga2O3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a GazO3 light-emittin... | 07/01/2008 |
| 7394112 | Heterostructure with rear-face donor doping The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar ma... | 07/01/2008 |
| 7388231 | Semiconductor light emitting device A semiconductor light emitting device includes a hetero-configuration having an active layer, a first clad layer, and a second clad layer, the active layer being interposed between the clad layers. The active layer emits light when charge carriers are injected. The ... | 06/17/2008 |
| 7385227 | Compact light emitting device package with enhanced heat dissipation and method for making the package A light emitting device package and method for making the package utilizes a first leadframe having a first surface and a second leadframe having a second surface that are relatively positioned such that the second surface is at a higher level than the first surface... | 06/10/2008 |
| 7382035 | Schottky diode with low leakage current and fabrication method thereof A low leakage Schottky diode and fabrication method thereof. The Schottky diode includes a n-type semiconductor; an anode having a circular periphery formed in a region above the n-type semiconductor; and a cathode formed in a region above the n-type semiconductor a... | 06/03/2008 |
| 7378680 | Migration enhanced epitaxy fabrication of quantum wells Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced Epitaxy) is used to flatten layers and enhance smoothness of quantum we... | 05/27/2008 |
| 7375380 | Semiconductor light emitting device A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first and second contact layers. Th... | 05/20/2008 |
| 7372077 | Semiconductor device A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed o... | 05/13/2008 |
| 7372078 | Vertical gallium-nitride based light emitting diode A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation ... | 05/13/2008 |
| 7371594 | Nitride semiconductor device and method for fabricating the same that minimizes cracking The present invention relates to a nitride semiconductor device and a method for fabricating the same. According to the present invention, there is an advantage in that trenches isolating respective nitride semiconductor unit devices from one another are filled with... | 05/13/2008 |
| 7368757 | Compound semiconductor and compound semiconductor device using the same A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 μm, a carrier concentration of 1016-102... | 05/06/2008 |
| 7368750 | Semiconductor light-receiving device A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrat... | 05/06/2008 |
| 7368368 | Multi-chamber MOCVD growth apparatus for high performance/high throughput In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The method includes depositing a layer of semiconductor material on a substra... | 05/06/2008 |
| 7368309 | Nitride semiconductor and fabrication method thereof The present invention relates to nitride semiconductor, and more particularly, to GaN-based nitride semiconductor and fabrication method thereof. The nitride semiconductor according to the present invention comprises a substrate; a GaN-based buffer layer formed in a... | 05/06/2008 |
| 7369583 | Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer A device contains at least one wavelength-tunable element controlled by an applied voltage and at least two resonant cavities, where the resonant wavelength of the tunable element is preferably elecrooptically tuned using the quantum confined Stark effect around the... | 05/06/2008 |
| 7368766 | Semiconductor light emitting element and method for fabricating the same The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer. ... | 05/06/2008 |
| 7365366 | Boron phosphide-based semiconductor light-emitting device and production method thereof A boron phosphide-based semiconductor light-emitting device, comprising: a crystalline substrate; a first semiconductor layer formed on said crystalline substrate, said first semiconductor layer including a light-emitting layer, serving as a base layer and having a ... | 04/29/2008 |
| 7364929 | Nitride semiconductor based light-emitting device and manufacturing method thereof An object of the present invention is to provide a nitride semiconductor based light-emitting device, which is low in operating voltage reduction and is high in performance, and a manufacturing method thereof. A first metal film is formed on a P-type conducti... | 04/29/2008 |
| 7365369 | Nitride semiconductor device A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type co... | 04/29/2008 |
| 7361522 | Growing lower defect semiconductor crystals on highly lattice-mismatched substrates A heterosystem of two different materials, mismatched in terms of lattice constant or symmetry, may be formed with reduced defects by using a two step approach proposed in this invention. Nanowires are first grown on a semiconductor substrate, and then a thin film o... | 04/22/2008 |
| 7361938 | Luminescent ceramic for a light emitting device A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of ... | 04/22/2008 |
| 7359113 | Semiconductor optical amplifier having a non-uniform injection current density A semiconductor optical amplifier (SOA) with efficient current injection is described. Injection current density is controlled to be higher in some areas and lower in others to provide, e.g., improved saturation power and/or noise figure. Controlled injection curren... | 04/15/2008 |
| 7359421 | Red light laser A semiconductor material vertical cavity surface emitting laser for emitting narrow linewidth light comprising a compound semiconductor material substrate and pairs of semiconductor material layers in a first mirror structure on the substrate of a first conductivity... | 04/15/2008 |
| 7358541 | Flip-chip light emitting diode and method of manufacturing the same Provided are a flip-chip light emitting diode (FCLED) and a method of manufacturing the same. The provided FCLED is formed by sequentially depositing an n-type cladding layer, an active layer, a p-type cladding layer, and a reflective layer on a substrate. The refle... | 04/15/2008 |
