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| Number | Title | Issue Date |
| 7041524 | Semiconductor laser device and method for fabricating the same A semiconductor laser device according to the present invention has a semiconductor substrate having a first region and a second region adjacent to the first region, a first active layer formed on the first region and made of a compound semiconductor, a first clad l... | 05/09/2006 |
| 7042019 | Gallium-nitride based multi-quantum well light-emitting diode n-type contact layer structure A structure for the n-type contact layer in the GaN-based MQW LEDs is provided. Instead of using Si-doped GaN as commonly found in conventional GaN-based MQW LEDs, the n-type contact layer provided by the present invention achieves high doping density (>1×1019... | 05/09/2006 |
| 7041529 | Light-emitting device and method of fabricating the same In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide ... | 05/09/2006 |
| 7042016 | Semiconductor optical device, method of forming contact in semiconductor optical device A semiconductor optical device comprises a superlattice contact semiconductor region and a metal electrode. The superlattice contact semiconductor region has a superlattice structure. The superlattice contact semiconductor region includes a II–VI compound semicond... | 05/09/2006 |
| 7038593 | Strip LED light assembly for motor vehicle A light emitting diode (LED) warning signal light, the warning signal light comprising a plurality of light sources constructed and arranged with a reflector or cullminator, the LED light source being in electrical communication with a controller and a power supply,... | 05/02/2006 |
| 7039085 | Semiconductor laser device A semiconductor laser device includes a dielectric multilayer film with a reflectance of 40% or more, on at least one of optical exit faces of a laser chip. The dielectric multilayer film includes a film of tantalum oxide (Ta2O5) and another fi... | 05/02/2006 |
| 7037741 | Compound semiconductor optoelectronic device A method for manufacturing a compound semiconductor optoelectronic device is proposed. There are steps of: forming an optoelectronic device epitaxial wafer, the optoelectronic device epitaxial wafer containing a V-shaped pit due to threading dislocation; forming an ... | 05/02/2006 |
| 7038243 | Semiconductor light emitting device A semiconductor light emitting device includes a hetero-configuration having an active layer, a first clad layer, and a second clad layer, the active layer being interposed between the clad layers. The active layer emits light when charge carriers are injected. The ... | 05/02/2006 |
| 7038244 | Semiconductor device and method of manufacturing the same A semiconductor device includes a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer, which are sequentially laminated on a substrate. It also includes an emitter electrode, a base electrode, and a collector electrode, w... | 05/02/2006 |
| 7034340 | Light-emitting diode array A light-emitting diode array comprising a conductive layer formed on a substrate; a plurality of separate light-emitting portions formed on the conductive layer; a first electrode formed on at least part of an upper surface of each of the light-emitting portions; an... | 04/25/2006 |
| 7034342 | Semiconductor light emitting device A light emitting layer forming portion is provided on a semiconductor substrate, in which an active layer made of a compound semiconductor is sandwiched between a first and second clad layers made of compound semiconductor having band gap greater than that of the ac... | 04/25/2006 |
| 7034330 | Group-III nitride semiconductor device, production method thereof and light-emitting diode A Group-III nitride semiconductor device including a crystal substrate, an electrically conducting Group-III nitride semiconductor (AlXGaYIn1−(X+Y)N: 0≦X | 04/25/2006 |
| 7033852 | Method and device for passivation of the resonator end faces of semiconductor lasers based on III-V semiconductor material A method and device for passivating the resonator end faces, in particular the cleaved edges of semiconductor laser diodes, by high-temperature epitaxy of the quaternary compound semiconductor InxGa1-xAsyP1-y, where (0≦x... | 04/25/2006 |
| 7033858 | Method for making Group III nitride devices and devices produced thereby A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO2); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; at... | 04/25/2006 |
| 7034328 | Vertical geometry InGaN LED A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quant... | 04/25/2006 |
| 7030417 | Semiconductor light emitting device and fabrication method thereof The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-... | 04/18/2006 |
| 7030415 | Semiconductor quantum dot optical amplifier, and optical amplifier module and optical transmission system using the same The present invention relates to an optical communication, and more particularly, to a wideband wavelength division multiplexing (WDM) optical communication system which can have a broad amplification band while overcoming a polarization dependency and solving a sig... | 04/18/2006 |
| 7030428 | Strain balanced nitride heterojunction transistors A nitride based heterojunction transistor includes a substrate and a first Group III nitride layer, such as an AlGaN based layer, on the substrate. The first Group III-nitride based layer has an associated first strain. A second Group III-nitride based layer, such a... | 04/18/2006 |
| 7031360 | Tilted cavity semiconductor laser (TCSL) and method of making same A novel class of semiconductor lasers, or “tilted cavity lasers” includes at least one active element with an active region generating an optical gain by injection of a current and mirrors. The active element is placed into a cavity. The cavity is designed such ... | 04/18/2006 |
| 7030414 | III group nitride compound semiconductor luminescent element A Group III nitride compound semiconductor light-emitting device includes a multilayer having a quantum well structure containing an InGaN well layer and an AlGaN barrier layer. The film thickness, growth rate and growth temperature of the InGaN layer as the well la... | 04/18/2006 |
| 7029939 | P-type semiconductor manufacturing method and semiconductor device A p-GaN layer 5 comprising materials such as a Group III nitride compound semiconductor is formed on a sapphire substrate 1 through MOVPE treatment, and a first metal layer 6 made of Co/Au is formed thereon. Then in a planar electron beam irradi... | 04/18/2006 |
| 7030003 | Compound semiconductor device, production method thereof, light-emitting device and transistor A semiconductor device having a silicon single crystal substrate and a boron phosphide semiconductor layer containing boron and phosphorus as constituent elements on a surface of the silicon single crystal substrate is disclosed. The surface of the silicon single cr... | 04/18/2006 |
| 7026181 | Method for forming LED by a substrate removal process The present invention relates to a method for forming LED. In the present invention, LED dies are defined by photolithography and etching processes to replace a cutting step, and a metal substrate of the LED is formed by chemical or physical method. ... | 04/11/2006 |
| 7026651 | Light emitting device having a pseudo-continuous spectrum and lighting apparatus using the same A light emitting device capable of readily produce a pseudo-continuous spectrum covering a wide wavelength regions at low costs, and of totally solving various problems which have resided in the conventional light sources, and a lighting apparatus using this device ... | 04/11/2006 |
| 7026653 | Semiconductor light emitting devices including current spreading layers III-nitride or III-phosphide light emitting devices include a light emitting region disposed between a p-type region and an n-type region. At least one heavily doped layer is disposed within either the n-type region or the p-type region or both, to provide current s... | 04/11/2006 |
| 7027474 | Semiconductor laser device and manufacturing method thereof The laser semiconductor device includes a semiconductor substrate, a first clad layer of a first conductivity type, an active layer, a second clad layer of a second conductivity type, and a protective layer of the second conductivity type, and peak wavelength of pho... | 04/11/2006 |
| 7026657 | High radiance led chip and a method for producing same The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) i... | 04/11/2006 |
| 7023025 | Crystal growth method of nitride semiconductor The present invention relates to a method of manufacturing a nitride semiconductor, and, more particularly, a crystal growth method of a nitride semiconductor wherein a nitride semiconductor are grown on a nitride buffer layer including aluminums so that it is possi... | 04/04/2006 |
| 7023020 | Group III nitride compound semiconductor light-emitting device A groove is formed in a semiconductor laminate portion containing a light-emitting layer so that the groove starts from a light emission observation surface of the semiconductor laminate portion to reach at least the light-emitting layer. In such a manner, light is ... | 04/04/2006 |
| 7023024 | Diamond based blue/UV emission source A diamond based Blue/UV light emitting source is disclosed. The source includes a diamond substrate having a first conductivity type, a first aluminum gallium nitride layer above the diamond substrate having the same conductivity type as the substrate, a bulk or a q... | 04/04/2006 |
| 7019330 | Resonant cavity light emitting device A light emitting device includes a resonant cavity formed by a reflective metal layer and a distributed Bragg reflector. Light is extracted from the resonant cavity through the distributed Bragg reflector. A light emitting region sandwiched between a layer of first ... | 03/28/2006 |
| 7015053 | Nitride semiconductor laser device A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor lase... | 03/21/2006 |
| 7015457 | Spectrally tunable detector A spectrally tunable optical detector and methods of manufacture therefore are provided. In one illustrative embodiment, the tunable optical detector includes a tunable bandpass filter, a detector and readout electronics, each supported by a different substrate. The... | 03/21/2006 |
| 7015511 | Gallium nitride-based light emitting device and method for manufacturing the same For a light emitting device using gallium nitride (GaN), on a substrate are sequentially formed a GaN-based layer, an AlGaN-based layer, and a light emitting layer. To prevent cracks in the AGaN-based layer, the AlGaN-based layer is formed before planarization of th... | 03/21/2006 |
| 7016381 | Current-controlled polarization switching vertical cavity surface emitting laser A fast current-controlled polarization switching VCSEL with two independent intra-cavity p-contact electrodes and two independent intra-cavity n-contact electrodes positioned along the four sides of the symmetric aperture such that there are two independent p- and n... | 03/21/2006 |
| 7012284 | Nitride semiconductor light emitting device and method of manufacturing the same Disclosed herein is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer on a substrate, an active layer formed on the n-type nitride semiconductor layer so that a portion of t... | 03/14/2006 |
| 7012279 | Photonic crystal light emitting device A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of se... | 03/14/2006 |
| 7009217 | Light emitting diode having an adhesive layer and a reflective layer and manufacturing method thereof A light emitting diode having an adhesive layer and a reflective layer and a manufacturing method thereof featured by adhering together a light emitting diode stack and a substrate having a reflective metal layer by use of a transparent adhesive layer so that the li... | 03/07/2006 |
| 7009199 | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current A light engine comprises a pair of LED active elements mounted on a common header having first and second terminals. The first terminal is connected to the cathode of the first LED active element and the anode of the second LED active element, while the second termi... | 03/07/2006 |
| 7008858 | Light emitting diode having an adhesive layer and a reflective layer and manufacturing method thereof A light emitting diode having an adhesive layer and a reflective layer and a manufacturing method thereof featured by adhering together a light emitting diode stack and a substrate having a reflective metal layer by use of a transparent adhesive layer so that the li... | 03/07/2006 |
