Famous Patents
The first match was accidentally discovered in 1826 when John Walker scraped a stick with chemicals on the end against a stone floor.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8178887 | Semiconductor light emitting device and method for manufacturing the same Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped se... | 05/15/2012 |
| 8174035 | Nitride-based semiconductor light emitting device An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting d... | 05/08/2012 |
| 8164105 | Light emitting device and method for fabricating the same Disclosed is a light emitting device. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, the second conductive semicond... | 04/24/2012 |
| 8154036 | Nitride semiconductor device A nitride semiconductor device according to the present invention sequentially includes at least an n-electrode, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer includes: an n-type GaN contact layer in... | 04/10/2012 |
| 8148742 | Type II broadband or polychromatic LEDs An LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%, and wherein at least one of the Type II interfaces is within a p... | 04/03/2012 |
| 8138510 | Gallium nitride light emitting devices and methods of manufacturing the same A gallium nitride (GaN) light emitting device and a method of manufacturing the same are provided, the method including sequentially forming a buffer layer and a first nitride layer on a silicon substrate, and forming a plurality of patterns by dry etching the first... | 03/20/2012 |
| 8134169 | Patterned substrate for hetero-epitaxial growth of group-III nitride film A circuit structure includes a substrate and a film over the substrate and including a plurality of portions allocated as a plurality of rows. Each of the plurality of rows of the plurality of portions includes a plurality of convex portions and a plurality of conca... | 03/13/2012 |
| 8134167 | Light emitting device and manufacturing method of the same A light emitting device is provided. In the light emitting device, a multi-layer for intercepting a reverse voltage applied to an active layer is formed between the active layer and a GaN layer. Accordingly, the reliability and operational characteristic of the ligh... | 03/13/2012 |
| 8134168 | Group-III nitride semiconductor device An object of the present invention is to provide a Group III nitride semiconductor element which comprises a thick AlGaN layer exhibiting high crystallinity and containing no cracks, and which does not include a thick GaN layer (which generally serves as a light-abs... | 03/13/2012 |
| 8129733 | Gallium nitride light emitting devices on diamond Gallium nitride devices are formed on a diamond substrate, such as for light emitting diodes as a replacement for incandescent light bulbs and fluorescent light bulbs. In one embodiment, gallium nitride diodes (or other devices) are formed on diamond in at least two... | 03/06/2012 |
| 8124989 | Light optoelectronic device and forming method thereof The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer includes a first nitrogen-containing compound layer, an II/V group compound l... | 02/28/2012 |
| 8120047 | III-nitride semiconductor light emitting device The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate with a first groove and a second groove formed therein, the substrate including a first surface and a second surface opposite to the first surface, a plurality ... | 02/21/2012 |
| 8120046 | Light-emitting element A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type and an active layer sandwi... | 02/21/2012 |
| RE43159 | Semiconductor light emitting device A semiconductor light emitting device includes a hetero-configuration having an active layer, a first clad layer, and a second clad layer, the active layer being interposed between the clad layers. The active layer emits light when charge carriers are injected. The ... | 02/07/2012 |
| 8106412 | Semiconductor light emitting device and fabrication method for the same The high luminance semiconductor light emitting device comprises: a GaAs substrate structure including a GaAs layer (3), a first metal buffer layer (2) disposed on a surface of the GaAs layer, a first metal layer (1) disposed on the first metal ... | 01/31/2012 |
| 8101959 | Light emitting device An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower... | 01/24/2012 |
| 8076682 | Contact for a semiconductor light emitting device A semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A p-electrode is disposed on a portion of the p-type region. The p-electrode includes a reflective first material in direct contact with a first portion ... | 12/13/2011 |
| 8063408 | Integrated semiconductor optical device and optical apparatus using the same In an integrated semiconductor optical device, a first cladding layer is made of a first conductivity type semiconductor. A first active layer for forming a first semiconductor optical device is provided on the first cladding layer in a first area of a principal sur... | 11/22/2011 |
| 8058660 | Semiconductor light emitting device, method for manufacturing same, and method for forming underlying layer Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the un... | 11/15/2011 |
| 8026525 | Boron phosphide-based semiconductor light-emitting device A boron phosphide-based semiconductor light-emitting device includes a substrate of silicon single crystal, a first cubic boron phosphide-based semiconductor layer that is provided on a surface of the substrate and contains twins, a light-emitting layer that is comp... | 09/27/2011 |
| 7994525 | Nitride-based semiconductor light emitting diode A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor... | 08/09/2011 |
| 7973325 | Reflective electrode and compound semiconductor light emitting device including the same Provided are a reflective electrode and a compound semiconductor light emitting device having the reflective electrode, such as LED or LD is provided. The reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting... | 07/05/2011 |
| 7964882 | Nitride semiconductor-based light emitting devices A nitride semiconductor-based light emitting device is provided. The nitride semiconductor-based light emitting device is formed of a nitride semiconductor having a wurtzite lattice structure with the Ga face. The device has a substrate, a buffer layer, a first p-ty... | 06/21/2011 |
| 7956369 | Light emitting diode A light emitting device comprising: a polar template; a p-type layer grown thereon; the p-type layer having a first polarization vector having a first projection relative to a growth direction; an n-type layer grown on the p-type layer; the n-type layer having a sec... | 06/07/2011 |
| 7952109 | Light-emitting crystal structures An apparatus comprising a structure comprising a group III-nitride and a junction between n-type and p-type group III-nitride therein, the structure having a pyramidal shape or a wedge shape. ... | 05/31/2011 |
| 7947994 | Nitride semiconductor device According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contr... | 05/24/2011 |
| 7943942 | Semiconductor light-emitting device with double-sided passivation A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the seco... | 05/17/2011 |
| 7928452 | GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of manufacturing GaN-based semiconductor light-emitting element, method of driving GaN-based semiconductor light-emitting element, and image display apparatus A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the ... | 04/19/2011 |
| 7919784 | Semiconductor light-emitting device and method for making same One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive p... | 04/05/2011 |
| 7915625 | Semiconductor light emitting device Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a curren... | 03/29/2011 |
| 7915624 | III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the secon... | 03/29/2011 |
| 7902562 | Light emitting diode device that includes a three dimensional cloud structure and manufacturing method thereof A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an... | 03/08/2011 |
| 7902561 | Nitride semiconductor light emitting device The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit ... | 03/08/2011 |
| 7893446 | Nitride semiconductor light-emitting device providing efficient light extraction A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate succe... | 02/22/2011 |
| 7893447 | Nitride-based semiconductor light emitting diode A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor... | 02/22/2011 |
| 7888693 | Semiconductor light emitting device and method for manufacturing the same Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped se... | 02/15/2011 |
| 7888692 | Single photon source Microcavity comprising two reflectors, at least one semiconductor layer separating said reflectors and a semiconductor quantum well wherein at least one of said reflectors and of said at least one semiconductor layer comprises a structure which is adjusted to locali... | 02/15/2011 |
| 7884380 | Semiconductor light emitting device This invention discloses a light emitting semiconductor device including a light-emitting structure and an external optical element. The optical element couples to the light-emitting structure circumferentially. In addition, the refractive index of the external opti... | 02/08/2011 |
| 7884381 | Light emitting device and method for fabricating the same including a back surface electrode with an Au alloy A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one su... | 02/08/2011 |
| 7880186 | III-nitride light emitting device with double heterostructure light emitting region In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm... | 02/01/2011 |
