Did You Know...
...that in the early 1940s GE engineer James Wright was charged with a task of utmost importance to the war effort: develop a cheap substitute for rubber that could be used to produce tires, gas masks and a whole host of military gear. Wright tackled the task diligently -- and wound up inventing Silly Putty.
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| Number | Title | Issue Date |
| 7391107 | Signal routing on redistribution layer A semiconductor wafer has a dielectric layer, a metal last layer, a passivation layer, and a redistribution layer. The metal last layer is formed over the dielectric layer, and the metal last layer has first and second locations that are spaced apart from each other... | 06/24/2008 |
| 7245014 | Semiconductor light emitting apparatus and method for producing the same A semiconductor light emitting apparatus includes a non-conductive sub mount; a metal layer provided on the sub mount; a solder material member provided on the metal layer; and a semiconductor light emitting device die-bonded to the metal layer by the solder materia... | 07/17/2007 |
| 7119423 | Semiconductor device and method of manufacturing the same, electronic module, and electronic instrument A semiconductor chip is mounted on the substrate so that the first group of electrodes faces the first group of leads and the second group of electrodes faces the second group of leads. The first group of leads extends in a direction away from the second group of el... | 10/10/2006 |
| 5962903 | Planarized plug-diode mask ROM structure A Mask ROM and a method of manufacture of a Mask ROM on a semiconductor substrate comprises formation of a first plurality of conductor lines in a first array. A dielectric layer is formed upon the device with a matrix of openings therein in line with the... | 10/05/1999 |
| 5962900 | High-density diode-based read-only memory device A read-only memory (ROM) device of the type including an array of diode-based memory cells for permanent storage of binary-coded data. The ROM device is partitioned into a memory division and an output division. The memory cells are formed over an insulat... | 10/05/1999 |
| 5872386 | Wafer layout of semiconductor device A wafer layout for a multi-channel device for improving the yield of operative devices comprises a semiconductor wafer and a plurality of semiconductor devices formed in the semiconductor wafer, each device comprising a consecutive series of impurity regi... | 02/16/1999 |
| 5648678 | Programmable element in barrier metal device An integrated circuit 10 has a programmable Zener diode with diffusion regions 18 and 16 and metal contacts 34 and 32. A barrier metal 30 is disposed between one contact 32 and the substrate 12; another contact region 18 has no barrier metal on its surfac... | 07/15/1997 |
| 5464989 | Mask ROM using tunnel current detection to store data and a method of manufacturing thereof Each of the portions corresponding to the crossings of a plurality of first strip conductive layers serving as bit lines and a plurality of second strip conductive layers serving as word lines crossing the conductive layers at right angles is used as one ... | 11/07/1995 |
| 5326998 | Semiconductor memory cell and manufacturing method thereof A semiconductor memory cell and device having a tubular formed storage electrode of a capacitor through which a bit line passes. The source, gate and drain of a switching transistor are arranged in a direction parallel to a longitudinal axis of the tubula... | 07/05/1994 |
| 5136348 | Structure and manufacturing method for thin-film semiconductor diode device A structure and manufacturing method for a thin film semiconductor device consisting of a single diode or a plurality of diodes connected in series, the device being formed of at least one pair of mutually adjacent P-type (23a) and N-type (23b) regions fo... | 08/04/1992 |
| 5130760 | Bidirectional surge suppressor Zener diode circuit with guard rings A semiconductor device is provided for use as a bidirectional surge suppressor circuit. It incorporates doped regions of substrate and epitaxial layers which result in a dual Zener diode arrangement having the Zener diodes associated in an opposite polari... | 07/14/1992 |
| 5130761 | Led array with reflector and printed circuit board The LED array of this invention is constructed of a printed circuit board, a plurality of LED chips disposed linearly on the printed circuit board, each LED chip being capable of radiating a light beam, and a reflection member for reflecting the light bea... | 07/14/1992 |
| 5115335 | Electrooptic fabry-perot pixels for phase-dominant spatial light modulators Phase enhancement by resonant Fabry-Perot picture elements in III-V semiconductor spatial light modulators (SLMs) is disclosed. For 95% reflecting electrodes, a phase modulation of 0.7π rad is found in transmission when the electrooptic input phase is 0.... | 05/19/1992 |
| 5084742 | Light emitting diode and its array and method of making the same A light emitting diode and its array having improved light emitting efficiency are disclosed. A first layer of a semiconductor material of a first conductivity type and a second layer of a semiconductor material of a second conductivity type are formed on... | 01/28/1992 |
| 5070383 | Programmable memory matrix employing voltage-variable resistors A memory matrix comprises a plurality of word lines, a plurality of bit lines, and a stacked diode and voltage-variable resistor structure interconnecting bit lines to word lines. The stacked diode and voltage-variable resistor structure includes a doped ... | 12/03/1991 |
| 4996569 | Integrated circuit In an integrated circuit array having a capacitance formed by a pn-junction and separated from other components by a pn-junction, semiconductor areas are provided which connect that zone of the two semiconductor zones forming the pn-junction of the capaci... | 02/26/1991 |
| 4996582 | Field effect transistor for microstrip mounting and microstrip-mounted transistor assembly A field effect transistor chip for connection to a microstrip transmission line includes a semiconductor substrate, a field effect transistor formed in the substrate, source, gate, and drain electrodes disposed at least partially on the substrate, the gat... | 02/26/1991 |
| 4979002 | Optical photodiode switch array with zener diode An optical switching array includes a body of a semiconductor material having opposed surfaces. A plurality of spaced bodies of a semiconductor material are on one of the surfaces of the substrate. Each body includes four superimposed regions extending th... | 12/18/1990 |
| 4959650 | Dual channel A/D and D/A converter with improved isolations A dual channel A/D and D/A converter includes a first channel converter, a second channel converter, and a reference generator all formed on a single semiconductor substrate. The reference generator is disposed intermediate the first channel converter and... | 09/25/1990 |
| 4933735 | Digital computer having control and arithmetic sections stacked above semiconductor substrate Disclosed is a digital computer having memory means stacked on an insulating layer over a semiconductor substrate. In one embodiment, the memory means includes an array of diodes which overflies the substrate and generates control signals for an arithmeti... | 06/12/1990 |
| 4905078 | Semiconductor device A semiconductor device includes a semiconductor layer provided above a pair of bipolar transistors formed in a surface region of a semiconductor body. Schottky barrier diodes and resistors are formed in the semiconductor layer. The pair of bipolar transis... | 02/27/1990 |
| 4881114 | Selectively formable vertical diode circuit element A programmable low impedance interconnect diode element is disclosed having a lower electrode formed of a semiconductor material of a first conductivity type covered by an insulating dielectric layer which may be in a preferred embodiment comprised of an ... | 11/14/1989 |
| 4868622 | Semiconductor light-detecting device with alloyed isolating region A semiconductor light detecting device comprises a substrate, a first stacked layer of a first conductivity type formed on the substrate by alternately laminating a compound semimetal layer and a compound semiconductor layer repeatedly, a second stacked l... | 09/19/1989 |
| 4868623 | Image sensing device An amorphous silicon thin-film p-i-n photodiode array image sensor structure is provided which avoids excessive leakage currents caused by contamination of the side-walls of anisotropically etched amorphous silicon film with conducting materials, such as ... | 09/19/1989 |
| 4868616 | Amorphous electronic matrix array for liquid crystal display A liquid crystal display electronic matrix array has first and second diodes connected together with the cathode of the first diode electrically connected to the anode of the second diode. The diodes are connected between substantially parallel address le... | 09/19/1989 |
| 4853753 | Resonant-tunneling device, and mode of device operation A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, ... | 08/01/1989 |
| 4797727 | Thyristor with aligned trigger guide A thyristor comprising a thyristor element with a trigger section 1a formed on the surface thereof. The thyristor element is attached to a metal disk 2 having at least three faces 2a on its periphery which are all a common distance l from the center of th... | 01/10/1989 |
| 4727409 | Programmable read-only memory formed with opposing PN diodes A semiconductor PROM contains a group of PROM cells (12) each consisting of a pair of opposing diodes oriented vertically with their common intermediate region (22 and 24) fully adjoining a recessed oxide insulating region (16). The PN junction (30) of th... | 02/23/1988 |
| 4723155 | Semiconductor device having a programmable fuse element A fuse element is formed on a field insulation film on a semiconductor substrate of n conductivity type in which MOS transistors are formed. A first guard ring region of second conductivity type is provided in the substrate, surrounding the semiconductor ... | 02/02/1988 |
| 4721977 | Electrographic printer with abutting chips each having an array of charge-discharging elements A multiple chip Led linear array including 2048 elements is achieved by a unique wafer dicing technique which allows LEDs in abutting chips to be separated by the same distance as adjacent elements on a single chip. The linear array is employed in photoco... | 01/26/1988 |
| 4706041 | Periodic negative resistance microwave structures and amplifier and oscillator embodiments thereof Structures (30) with IMPATT type diodes (34) located periodically along a transmission line (38-32) to simulate a distributed diode are disclosed. Preferred embodiments include incorporation of the periodic diode structures as the gain element of microwav... | 11/10/1987 |
| 4699465 | Laser diode array with phase correction A laser diode array produces one set of beams that are out of phase with those of another set of beams, with the beams of one set alternating with those of the other. The phase plate has first and second sets of regions, with the regions of one set altern... | 10/13/1987 |
| 4692998 | Process for fabricating semiconductor components A process for the fabrication of semiconductor components and in particular a process in which the components are fabricated with a controlled spacing of etched channels. The process is in particular utilized in fabricating a monolithic array of elements ... | 09/15/1987 |
| 4661834 | Semiconductor structures and manufacturing methods A plurality of microwave semiconductor devices is provided by plating a thin conductive layer on a surface of a wafer of semiconductor material, masking selected portions of the thin conductive layer, and plating unmasked portions of the thin conductive l... | 04/28/1987 |
| 4646266 | Programmable semiconductor structures and methods for using the same A solid state semiconductor device is disclosed which is programmable so as to alter the impedance between its two terminals. In many embodiments, the device is programmable to have any one of four conditions: a first in which the electrical impedance is ... | 02/24/1987 |
| 4633280 | Unit of light emitting diode arrays A unit of light emitting diode arrays in accordance with the present invention comprises a main body (21) of n-GaAs, layers (22) and (23) of n-GaAsP formed on the main body and a plurality of light emitting regions (24) formed in a line by diffusion of Zn... | 12/30/1986 |
| 4628339 | Polycrystalline silicon Schottky diode array A process and structure are disclosed which are suitable for forming large arrays of Schottky diodes at desired locations between mutually perpendicular strips of aluminum and strips of metal-silicide. The invention is particularly useful in creating read... | 12/09/1986 |
| 4605944 | LED array device for printer An LED array device includes a plurality of LED units and a board for supporting the plurality of LED units. Each LED unit has a plurality of LED elements aligned straight in a predetermined pitch with a predetermined spacing between neighboring LED eleme... | 08/12/1986 |
| 4589008 | Apparatus for electrically joining the ends of substantially parallel semiconductor lines Apparatus, comprising a series of staggered metal contacts, is used to join adjacent ends of adjacent sets of substantially parallel semiconductor lines. The lines of one set can have a conductivity type opposite that of the lines of the adjacent set. Als... | 05/13/1986 |
| 4584594 | Logic structure utilizing polycrystalline silicon Schottky diodes An integrated circuit structure and process for fabricating it are described which allow fabrication of a very compact high-speed logic gate. The structure utilizes a bipolar transistor formed in an epitaxial silicon pocket surrounded by silicon dioxide. ... | 04/22/1986 |
