Quotables
"To place a man in a multi-stage rocket and project him into the controlling gravitational field of the moon where the passengers can make scientific observations, perhaps land alive, and then return to earth--all that constitutes a wild dream worthy of Jules Verne. I am bold enough to say that such a man-made voyage will never occur regardless of all future advances."
Lee deForest, American radio pioneer ; 1957
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| Number | Title | Issue Date |
| 4398055 | Radiant energy converter having sputtered CdSiAs2 absorber Thin film radiant energy converter having a sputtered CdSiAs2 photovoltaic absorber layer and a thermally evaporated CdS top layer. The sputtering technique with multiple targets (Cd, Si, As) is used to obtain stoichiometric CdSiAs2 ... | 08/09/1983 |
| 4393267 | Method for improving the efficiency of a solar cell and an improved cadmium sulfide/copper sulfide photovoltaic cell A CdS/Cux S solar cell and method of fabricating the solar cell. The CdS layer of the solar cell is fabricated on a conductive substrate and forms an ohmic contact thereto. Thereafter, a layer of Cux S is fabricated on the CdS layer ... | 07/12/1983 |
| 4366337 | p-Si/n-CdS Heterojunction photovoltaic cells The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage highe... | 12/28/1982 |
| 4362896 | Polycrystalline photovoltaic cell A photovoltaic cell is formed by combining a spray process, forming a crystalline layer containing cadmium and sulfur, and an evaporation process, depositing copper chloride for converting to Cux S. The crystals containing cadmium and sulfur ar... | 12/07/1982 |
| 4319069 | Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation There are disclosed a semiconductor device comprising a layer of polycrystalline p-type CdTe and a variety of metals in low-resistance contact, and a process and preferred etchant for obtaining the contact. A layer comprising tellurium is provided between... | 03/09/1982 |
| 4295148 | Method of fabrication of electroluminescent and photodetecting diodes A layer of thickness xj is formed at the surface of a wafer of p-type ZnTe semiconductor material and compensated so as to provide insulation with high resistivity. Ions are implanted with sufficient energy to form a trapping region of thicknes... | 10/13/1981 |
| 4263056 | Method for the manufacture of light emitting and/or photodetective diodes Method for the manufacture of light emitting and/or photodetective diodes, wherein it comprises the following operations: (a) starting with a substrate of the material Mgx Zn1-x Te; (b) a means which will make this material conductive is appli... | 04/21/1981 |
| 4239553 | Thin film photovoltaic cells having increased durability and operating life and method for making same A solar cell having a copper-bearing absorber is provided with a composite transparent encapsulating layer specifically designed to prevent oxidation of the copper sulfide. In a preferred embodiment, the absorber is a layer of copper sulfide and the compo... | 12/16/1980 |
| 4234353 | Process for preparing photovoltaic cells having increased adhesion of the semi-conducting layer and produced thereby to the conducting layer Improved adhesion of the semi-conducting layer to the conducting layer in a thin film photovoltaic cell is obtained by incorporating a minor amount of the element or elements of the conducting layer in the semi-conducting layer.... | 11/18/1980 |
| 4233613 | Compound semiconductor wafer A compound semiconductor wafer having a substrate of a IV-group element semiconductor of a predetermined conductivity type, an epitaxial layer formed by epitaxially growing on the substrate a compound semiconductor having the same conductivity type as the... | 11/11/1980 |
| 4207119 | Polycrystalline thin film CdS/CdTe photovoltaic cell A photovoltaic cell and a process of making and using it are disclosed wherein extremely thin semiconductor layers are provided through the use of polycrystalline CdS and CdTe. The cell has conversion efficiencies as high as 6% or more when exposed to AM2... | 06/10/1980 |
| 4197552 | Luminescent semiconductor devices Luminescent semiconductor device having a wide-gap semiconductor material substrate (e.g., ZnS), a thin (.ltorsim.100A thick) alkali halide insulating layer (e.g., NaI, KI, LiI) in the substrate and a metal layer on the insulating layer such that the insu... | 04/08/1980 |
| 4143235 | Cadmium sulfide photovoltaic cell and method of fabrication A cadmium sulfide photovoltaic cell of improved efficiency comprising a barrier layer and cadmium sulfide-containing bilayer, the bilayer being formed by depositing at a first temperature an initial layer of cadmium sulfide in interfacial contact with the... | 03/06/1979 |
| 4120705 | Vacuum deposition process for fabricating a CdS--Cu2 S heterojunction solar cell device A solar cell is comprised of (1) a Cu2 S thin film evaporated on a conductive substrate at an elevated temperature thereby growing a polycrystalline film of preferred orientation, and (2) an outer CdS layer grown epitaxially on the Cu2 | 10/17/1978 |
| 4113531 | Process for fabricating polycrystalline InP-CdS solar cells The specification describes a compound semiconductor solar cell and fabrication process therefor wherein both the P and N-type layers of the cell are polycrystalline semiconducting material and have large crystallites with grain boundaries of similar dime... | 09/12/1978 |
| 4108684 | Large grain thin film polycrystalline P-InP/n-Cds solar cell A thin film solar cell having adjacent layers of P and N type polycrystalline semiconductor material which define a PN junction boundary, the improvement comprising a layer of n-type polycrystalline cadmium sulfide disposed on a chosen substrate material ... | 08/22/1978 |
| 4101341 | CdSe-SnSe photovoltaic cell The invention relates to a photovoltaic cell for converting solar energy into electrical power and which has, in sandwich construction, two different polycrystalline, semiconductor layers in intimate contact and disposed on a metal or metal-coated substra... | 07/18/1978 |
| 4081290 | Solar cells and photovoltaic devices of InP/CdS Heterodiodes showing excellent potential for use in solar cells and photoelectric devices consist of junctions of p-type indium phosphide and n-type cadmium sulfide. These heterojunctions can be formed either from single crystal or from polycrystalline se... | 03/28/1978 |
| 4039357 | Etching of III-V semiconductor materials with H2 S in the preparation of heterodiodes to facilitate the deposition of cadmium sulfide A hydrogen transport process for cleaning the surface of an indium or gallium based semiconductor material and for depositing n-type cadmium sulfide on the cleaned semiconductor material is disclosed. The cleaning and deposition can be accomplished in seq... | 08/02/1977 |
| 4035197 | Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture A cadmium telluride photovoltaic cell is produced with increased conversion efficiency arising from enhanced open-circuit voltage. Such voltage is achieved by altering the surface of the crystalline cadmium telluride that contacts the barrier metal by hea... | 07/12/1977 |
| 4035819 | Method of making a zinc sulphide ceramic body and a zinc sulphide ceramic body made thereby A method of making a zinc sulphide ceramic body having a low electrical resistance characterized by sulphurizing a starting oxide material consisting essentially of zinc oxide and from 0.01 atomic % to 6.0 atomic % of at least one oxide of a metal selecte... | 07/12/1977 |
| 3987474 | Non-volatile charge storage elements and an information storage apparatus employing such elements A non-volatile charge storage element wherein long-term charge storage occurs in the interface states of the element. Charge is stored at low applied voltages (ࣘ 10 volts) in short times (ࣘ 1 microseconds) and is stored as long as 105 secon... | 10/19/1976 |
| 3985918 | Method for manufacturing a target for an image pickup tube A target for an image pickup tube having high sensitivity, low dark current and low amount of lag-image is manufactured by forming a hetero-junction by the evaporation process. A first layer of ZnSx Se1.sub.-x or Znu Cd | 10/12/1976 |
| 3975661 | Driving method for a thin-film electroluminescent element of a three-layer construction Disclosed is a driving method for a thin-film electroluminescent element of a three-layer construction which emits light and exhibits the hysteresis phenomenon within the light emission versus applied voltage characteristics. The light intensity is mainta... | 08/17/1976 |
| 3975213 | High voltage diodes A high voltage diode has a lamellar structured body of semiconductor material. The lamellar structure is produced by the thermal gradient zone melting process method of migrating metal "wires" through the body to form a plurality of spaced regions of cond... | 08/17/1976 |
