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| Number | Title | Issue Date |
| 5329158 | Surface mountable semiconductor device having self loaded solder joints An improved semiconductor device is disclosed having a predetermined amount of solder, or other electrically conductive binder adsorbed onto the exterior package leads of the semiconductor device. A de-wettable coating comprising preferably nickel, or alt... | 07/12/1994 |
| 5327013 | Solder bumping of integrated circuit die A method for forming a solder bump on an integrated circuit die utilizes a terminal (12) formed of an electrically conductive, solder-wettable composite material composed of copper particles and a polymeric binder. The terminal comprises a bond pad (24) o... | 07/05/1994 |
| 5317191 | Low-melting-point junction material having high-melting-point particles uniformly dispersed therein A semiconductor device includes a semiconductor element attached to a support member by a junction material that includes a parent phase of a low-melting-point junction material and fine particles of a high-melting-point junction material which are unifor... | 05/31/1994 |
| 5175611 | Microwave integrated circuit package to eliminate alumina substrate cracking A MIC package housing that reduces or completely eliminates alumina substrate cracking due to thermal expansion rate differences between the housing and the alumina by using a low-expansion iron-nickel alloy, such as commercially available Carpenter 49, m... | 12/29/1992 |
| 5164818 | Removable VLSI assembly A system for mounting VLSI devices on a substrate is disclosed, offering a high contact density. Each package consists of a semiconductor device having protruding elongated contact pin (2) on its surface and a wiring substrate having a cavity (3) on its s... | 11/17/1992 |
| 5151846 | Surface mountable rectifier and method for fabricating same The rectifier sub-assembly, formed by high temperature brazing, is glass encapsulated. It has axially extending leads with enlarged head portions. The sub-assembly is prepared for surface mounting by first flattening the leads outwardly from the enlarged ... | 09/29/1992 |
| 5147084 | Interconnection structure and test method Disclosed is a connector structure on a substrate which includes at least one first solder portion on the surface of the substrate; at least one second solder portion connected to each of the at least one first solder portions; and an epoxy layer disposed... | 09/15/1992 |
| 5130779 | Solder mass having conductive encapsulating arrangement The present invention relates generally to a new interconnection and a method for making the same, and more particularly, to an elongated solder interconnection and a method for making the same. On an electronic carrier, a pad is formed on which a solder ... | 07/14/1992 |
| 5121186 | Integrated circuit device having improved junction connections A method for forming a contact to a selective region of an integrated circuit characterized by the steps of: forming a layer of refractory metal over and around the selected region; forming a layer of amorphous silicon over the layer of refractory metal; ... | 06/09/1992 |
| 5047833 | Solderable front metal contact for MOS devices A semiconductor device having an MOS-type gate and a main power conduction path through the thickness of the chip has a first main contact on the front surface of the device and a second main contact on the back surface of the device. The contact on the f... | 09/10/1991 |
| 5016083 | Submount for semiconductor laser device A semiconductor laser device submount disposed between a semiconductor laser chip and a metal block for securing them together includes a metallization structure on each of two opposing surfaces of an Sb-doped submount body. The metallization includes a f... | 05/14/1991 |
| 5008735 | Packaged diode for high temperature operation The invention is a packaged diode suitable for operation at temperatures above 200° C. and during temperature excursions between -65° C. and at least 350° C. The invention comprises a diode having respective p-n portions with a p-n junction therebetwee... | 04/16/1991 |
| 4984051 | Semiconductor device having directly connected source terminal The present invention relates to an improvement in an electrode structure of a semiconductor device having a MOSFET chip, wherein a source terminal is directly connected to a source electrode of the semiconductor device so that the source terminal overlap... | 01/08/1991 |
| 4947238 | Submount for semiconductor laser element A submount for a semiconductor laser element includes a substrate and a barrier layer disposed on opposed surfaces of the substrate and including a plurality of layers wherein the outermost layer of the barrier layers is Au and Ag. A metal alloy solder la... | 08/07/1990 |
| 4922322 | Bump structure for reflow bonding of IC devices In a semiconductor device tape assembly bonding process the fingers of a copper tape are reflow soldered to metal bumps located on the semiconductor device. First, the semiconductor wafer is covered with a conductive film composed of thin layers of alumim... | 05/01/1990 |
| 4872047 | Semiconductor die attach system A semiconductor die attach system adapted for attaching a semiconductor die to a substrate is provided. A metallic buffer component is disposed between the substrate and the semiconductor die to withstand stresses created from thermal cycling of the subst... | 10/03/1989 |
| 4766479 | Low resistance electrical interconnection for synchronous rectifiers A technique is disclosed for making the high current-carrying electrical interconnections to the power FET devices in a synchronous rectifier circuit with extremely low lead resistance. All such interconnections are made with solder and pliable copper str... | 08/23/1988 |
| 4734755 | Alternating load stable switchable semiconductor device A semiconductor device element, switchable and stable against alternating loads, is provided as an intermediate product which can be stored, can be applied universally, has a semiconductor wafer disposed between two annular insulating bodies and is stabil... | 03/29/1988 |
| 4710798 | Integrated circuit chip package An integrated circuit is mounted on, and electrically connected to an underlying substrate by the flip-chip technique. In this technique, the chip is inverted and bonding pads on the chip are soldered to correspondingly located bonding pads on the substra... | 12/01/1987 |
| 4673772 | Electronic circuit device and method of producing the same In connecting an electronic circuit part such as a semiconductor or other part to a substrate for mounting the part with solder, the solder is composed of a high-melting-point solder portion which is subjected to working such as rolling and heat treatment... | 06/16/1987 |
| 4651191 | Semiconductor device and fabrication method thereof Disclosed is a semiconductor device constructed such that among elements forming a brazing material for bonding an electrode on a semiconductor substrate to an external electrode, the amounts of those elements which react with the material of the electrod... | 03/17/1987 |
| 4635091 | Semiconductor device having overload protection The transistor includes a semiconductor body having a surface on which are disposed metallic connection contact areas, including means for protection from overloads. At least one of the metallic area comprises a material, such as Al, susceptible to formin... | 01/06/1987 |
| 4607277 | Semiconductor assembly employing noneutectic alloy for heat dissipation A cooling means for a circuit chip device employs a noneutectic metal alloy to form a low thermal resistance bridging interface between the surface of the chip device and a heat sink. The alloy has a solidus-liquidus temperature range such that the solidu... | 08/19/1986 |
| 4577398 | Method for mounting a semiconductor chip A method of attaching a semiconductor chip to a mounting surface is disclosed. A solder barrier is applied to the mounting surface, and a preform of solder is located within the solder barrier. The preform is heated and then cooled in a vacuum to preflow ... | 03/25/1986 |
| 4561011 | Dimensionally stable semiconductor device A heat dissipating member including a heat sink is placed on a module base board with flip-chips mounted thereon, with metallic plates and first adhesive materials of a good thermal conductivity interposed between the heat dissipating member and the flip-... | 12/24/1985 |
| 4546374 | Semiconductor device including plateless package A semiconductor device including a metallurgically compatible unplated package is provided. The package includes a plateless copper alloy die mount area to which a semiconductor die is attached. The semiconductor die is metallized on its mounting surface ... | 10/08/1985 |
| 4527184 | Integrated semiconductor circuits with contact interconnect levels comprised of an aluminum/silicon alloy Contact interconnect levels for integrated circuit with a semiconductor substrate consisting of silicon in which and on which components forming the circuit are produced, are composed essentially of an aluminum/silicon/titanium alloy having a proportion o... | 07/02/1985 |
| 4504849 | Semiconductor devices and a solder for use in such devices A semiconductor device, for example a power rectifier, formed in a semiconductor body has a contact area coated with a metal layer of, for example, gold. A metallic member is soldered to the layer with an alloy comprising at least 80% lead, the balance be... | 03/12/1985 |
| 4500904 | Semiconductor device A solder joint between a semiconductor substrate and an electrode is disclosed in which that principal surface of the semiconductor substrate where an n-type semiconductor layer is exposed is bonded to the electrode with brazing solder, and the brazing so... | 02/19/1985 |
| 4498096 | Button rectifier package for non-planar die An axial lead semiconductor device package is provided for use with non-planar semiconductor die. By using solders of predetermined strength, wetting and flow characteristics, melting temperature, shape, area, and thickness, reliable attachment of non-pla... | 02/05/1985 |
| 4486511 | Solder composition for thin coatings A solder composition of 10 to 40 percent tin, with the balance lead, for use in thin layers of 50 to 500 microinches on copper integrated circuit leads so as to resist the formation of intermetallics when later heated.... | 12/04/1984 |
| 4480261 | Contact structure for a semiconductor substrate on a mounting body In bonding a semiconductor substrate onto a mounting means, a multiple layer metal electrode is formed on the surface, the multiple layer comprising at least a chromium-nickel alloy layer, nickel layer and a noble metal layer of a noble metal selected fro... | 10/30/1984 |
| 4451972 | Method of making electronic chip with metalized back including a surface stratum of solder Electronic chip having a composite stratified metal back and method of making it in which strata of metal and/or metal alloys are deposited on the back of the silicon base or a wafer carrying a plurality of circuit components on its face at least one of t... | 06/05/1984 |
| 4403243 | Semi-conductor laser apparatus with support and soldering means for light-transmitting member The present invention extends the service life of a semi-conductor laser element by bonding a light transmitting member for transmitting the output light from said laser element to a support member for said transmitting member with soft metal solder to im... | 09/06/1983 |
| 4392010 | Photovoltaic cells having contacts and method of applying same Electrically conductive contacts containing zinc or other solderable metals, and aluminum are formed on the front and/or back surfaces of a solar cell. They are deposited by spraying the metals onto the cell surfaces, together or as layers, with the alumi... | 07/05/1983 |
| 4355323 | Coupler comprising a light source and lens For many optical communications systems, a semiconductor laser must be situated at an exact position and at an exact distance from a first optical element (for example a lens) of the optical system coupled to the laser. This is achieved according to the i... | 10/19/1982 |
| 4350990 | Electrode for lead-salt diodes A significantly more stable ohmic contact for a lead-salt semiconductor surface, especially for use in infrared lasers. The contact has layers of platinum, palladium or nickel alternating with gold, and then covered with indium. An Au-Pd-Au-In contact is ... | 09/21/1982 |
| 4321617 | System for soldering a semiconductor laser to a metal base A GaAs diode and a copper base are joined together so as to form a soldered system comprising an indium layer inserted between two tungsten layers which serve as a barrier for preventing indium diffusion. A thin gold or platinum wetting layer is applied t... | 03/23/1982 |
| 4210389 | Bond and method of making the same A solid state laser rod and a mount through which heat is dissipated from the rod are joined together at a bond comprised of a reflective layer on the surface of the rod, a barrier layer over the reflective layer, and a solder layer between the barrier la... | 07/01/1980 |
| 4207587 | Package for light-triggered thyristor An hermetically sealed package for a light-triggered thyristor. The thyristor is mounted within the cavity of an insulating body. Cathode and anode pole pieces are mounted on opposite sides of and electrically coupled with the thyristor. Annular flanges a... | 06/10/1980 |
