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Vladimir Zworykin, television pioneer ; Talking about an invention in which he played a critical role.
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| Number | Title | Issue Date |
| 8164193 | Metal wiring of semiconductor device and forming method thereof The present invention relates to a metal wiring of a semiconductor device and a method for the same, and is directed to disclose a technique forming an additional conductive layer within the metal line, which acts as an etching barrier to increase the etching margin... | 04/24/2012 |
| 8148822 | Bonding pad on IC substrate and method for making the same A bonding pad structure is fabricated on an integrated circuit (IC) substrate having at least a contact layer on its top surface. A passivation layer covers the top surface of the IC substrate and the contact layer. The passivation layer has an opening exposing a po... | 04/03/2012 |
| 8053895 | Metal line of semiconductor device having a multilayer molybdenum diffusion barrier and method for forming the same A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The di... | 11/08/2011 |
| 8008778 | Semiconductor device A semiconductor device includes a first metal layer provided above a semiconductor substrate, an interlayer insulating film provided above the first metal layer, a second metal layer that is provided in an opening formed in the interlayer insulating film and is in c... | 08/30/2011 |
| 7868458 | Semiconductor device with epitaxial C49-titanium silicide (TiSi) layer and method for fabricating the same The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the pha... | 01/11/2011 |
| 7791202 | Semiconductor device having oxidized metal film and manufacture method of the same A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in ... | 09/07/2010 |
| 7741719 | Integrated circuit system with dummy region An integrated circuit system comprised by forming a first region, a second region and a third region within a dielectric over a substrate. The first region includes tungsten plugs. The second region is formed adjacent at least a portion of the perimeter of the first... | 06/22/2010 |
| 7633165 | Introducing a metal layer between SiN and TiN to improve CBD contact resistance for P-TSV The present disclosure provide an integrated circuit. The integrated circuit includes a through-silicon-via (TSV) trench configured in a semiconductor substrate; a conductive pad formed on the semiconductor substrate, the conductive pad being adjacent the TSV trench... | 12/15/2009 |
| 7550851 | Adhesion of tungsten nitride films to a silicon surface A process is described that forms a low resistivity connection between a tungsten layer and a silicon surface with high adherence of the tungsten to the silicon. The silicon surface is plasma-cleaned to remove native oxide. A very thin layer (one or more monolayers)... | 06/23/2009 |
| 7508077 | Semiconductor device and method of manufacturing same A semiconductor device comprises: a semiconductor chip; a first frame; a solder layer which bonds the solder bonding metal layer of the semiconductor chip and the first frame; and a second frame bonded to the rear face of the semiconductor chip. The semiconductor ch... | 03/24/2009 |
| 7443032 | Memory device with chemical vapor deposition of titanium for titanium silicide contacts A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second prec... | 10/28/2008 |
| 7414314 | Semiconductor device and manufacturing method thereof A semiconductor device has a semiconductor substrate, a first insulating film formed on a surface of the semiconductor substrate, a first recess formed in the first insulating film, a first barrier film formed on an inner surface of the first insulating film except ... | 08/19/2008 |
| 7402883 | Back end of the line structures with liner and noble metal layer A back end of the line (BEOL) structure of a semiconductor device is presented. In one embodiment, the structure may include a first liner layer disposed on an intermediate interconnect structure, the intermediate interconnect structure having an opening disposed be... | 07/22/2008 |
| 7385292 | Top layers of metal for high performance IC's A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an ... | 06/10/2008 |
| 7379307 | Wiring board and method for manufacturing the same, and semiconductor device A wiring board includes: an insulating base; a plurality of conductive wirings; and bumps formed on the conductive wirings, respectively. The conductive wirings can be connected with electrode pads of a semiconductor element via the bumps. The conductive wirings inc... | 05/27/2008 |
| 7372153 | Integrated circuit package bond pad having plurality of conductive members An integrated circuit package bond pad includes an insulating layer and an electrode located over the insulating layer. The electrode has a first surface configured to be bonded to external circuitry and a second surface opposite the first surface. A plurality of co... | 05/13/2008 |
| 7372160 | Barrier film deposition over metal for reduction in metal dishing after CMP A protective barrier layer, formed of a material such as titanium or titanium nitride for which removal by chemical mechanical polishing (CMP) is primarily mechanical rather than primarily chemical, formed on a conformal tungsten layer. During subsequent CMP to patt... | 05/13/2008 |
| 7372157 | Semiconductor device including titanium wires and manufacturing method therefor A first insulating film consisting of an insulating material is formed on a major surface of a semiconductor substrate. On the first insulating film, a wire comprising a first conductive layer, which contains one of elemental Ti and a Ti compound, is formed. Cover f... | 05/13/2008 |
| 7371679 | Semiconductor device with a metal line and method of forming the same A method of forming a metal line in a semiconductor device including forming an inter-metal dielectric (IMD) layer on the semiconductor substrate including the predetermined pattern, planarizing the IMD layer through a first CMP process, and patterning a via hole on... | 05/13/2008 |
| 7368781 | Contactless flash memory array A method for forming a contactless flash memory cell array is disclosed. According to an embodiment of the invention, a plurality of active regions is formed on a substrate. An insulating layer is then deposited over the active regions, and a portion of the insulati... | 05/06/2008 |
| 7365430 | Semiconductor device and method of manufacturing the same Disclosed herein is a semiconductor device and method of manufacturing the same. A step between a memory cell formed in a cell region and a transistor formed in a peripheral circuit region is minimized, and the height of a gate in the memory cell is minimized. Accor... | 04/29/2008 |
| 7365361 | Semiconductor device and method for manufacturing the same The present invention provides a method for manufacturing a semiconductor device, by which a transistor including an active layer, a gate insulating film in contact with the active layer, and a gate electrode overlapping the active layer with the gate insulating fil... | 04/29/2008 |
| 7361993 | Terminal pad structures and methods of fabricating same Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The method... | 04/22/2008 |
| 7361996 | Semiconductor device having tin-based solder layer and method for manufacturing the same A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the t... | 04/22/2008 |
| 7357018 | Method for performing a measurement inside a specimen using an insertable nanoscale FET probe A measurement inside a specimen is performed by providing a nanoscale FET probe comprising a cantilever element and a nanowire extending from the cantilever element. The nanowire is electrically connected to the cantilever element at at least one of the ends of the ... | 04/15/2008 |
| 7352583 | Flexible lead for a pressfit diode bridge An improvement to a bridge rectifier assembly of the type used to convert alternating current produced by an motor vehicle alternator into direct current. The bridge rectifier assembly of this type comprises a heat sink, a plurality of pressfit diodes installed in t... | 04/01/2008 |
| 7323717 | Semiconductor device A wiring line to which a high-frequency signal is applied is electrically connected in parallel to an auxiliary, wiring line via a plurality of contact holes. The contact holes are formed through an interlayer insulating film and arranged in vertical direction to th... | 01/29/2008 |
| 7321157 | CoSb-based thermoelectric device fabrication method A method of fabricating a CoSb3-based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layers, attaching the buf... | 01/22/2008 |
| 7309891 | Non-volatile and memory semiconductor integrated circuit A semiconductor integrated circuit device includes first, second gate electrodes, first, second diffusion layers, contact electrodes electrically connected to the first diffusion layers, a first insulating film which has concave portions between the first and second... | 12/18/2007 |
| 7309920 | Chip structure and process for forming the same A chip or wafer comprises a semiconductor substrate, first and second transistors on the semiconductor substrate, first and second metal layers over the semiconductor substrate, an insulating layer on the first and second metal layers, a third and fourth metal layer... | 12/18/2007 |
| 7307344 | Semiconductor device including a discontinuous film and method for manufacturing the same Disclosed is a semiconductor device comprising a semiconductor substrate, a first insulating film formed above the semiconductor substrate, Cu wiring buried in the first insulating film, a second insulating film formed above the Cu wiring, and a discontinuous film m... | 12/11/2007 |
| RE39932 | Semiconductor interconnect formed over an insulation and having moisture resistant material A plurality of metal wires are formed on an underlying interlayer insulating film. Areas among the metal wires are filled with a buried insulating film of a silicon oxide film with a small dielectric constant (i.e., a first dielectric film), and thus, a parasitic ca... | 12/04/2007 |
| 7303988 | Methods of manufacturing multi-level metal lines in semiconductor devices Methods of forming a multi-level metal line of a semiconductor device are disclosed. One example method includes subsequently stacking first and second metal layers, wherein a conductive etching stopper layer is interposed at an interface between the first and secon... | 12/04/2007 |
| 7305565 | Secure, encrypting pin pad Apparatus and methods for encrypting an identifier such as a PIN entered on a keypad. The apparatus may include a pad, an encrypting circuit adjacent the pad and a link coupling the pad and the encrypting circuit. The pad is for entering an identifier, and the circu... | 12/04/2007 |
| 7301241 | Semiconductor device for preventing defective filling of interconnection and cracking of insulating film The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 | 11/27/2007 |
| 7301190 | Structures and methods to enhance copper metallization Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a meta... | 11/27/2007 |
| 7301238 | Structure and method of forming an enlarged head on a plug to eliminate the enclosure requirement The contact opening through an insulating layer is formed having a straight sidewall portion and a bowl shaped sidewall portion. The bowl shaped sidewall portion is near the top of the insulation layer to provide an enlarged diameter of the contact opening at the to... | 11/27/2007 |
| 7298029 | Semiconductor devices and manufacturing method therefor A non-contact identification semiconductor device is provided with a semiconductor chip including a receiving circuit that receives an inquiry to the non-contact identification semiconductor device, a memory that stores identification information of multiple bits an... | 11/20/2007 |
| 7294565 | Method of fabricating a wire bond pad with Ni/Au metallization A method for sealing an exposed surface of a wire bond pad with a material that is capable of preventing a possible chemical attack during electroless deposition of Ni/Au pad metallurgy is provided. Specifically, the present invention provides a method whereby a TiN... | 11/13/2007 |
| 7294858 | Semiconductor device and method of manufacturing the same A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy an... | 11/13/2007 |
