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| Number | Title | Issue Date |
| 8183572 | Compound semiconductor device and its manufacture method A vertical type GaN series field effect transistor having excellent pinch-off characteristics is provided. A compound semiconductor device includes a conductive semiconductor substrate, a drain electrode formed on a bottom surface of the conductive semiconductor sub... | 05/22/2012 |
| 8168984 | Light emitting diodes with smooth surface for reflective electrode A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are disposed on one side of the epitaxial layer structure. The epitaxial layer structure includes a transparent ohmic contact l... | 05/01/2012 |
| 8129725 | Semiconductor sensor A semiconductor sensor determines physical and/or chemical properties of a medium, in particular a pH sensor. The semiconductor sensor has an electronic component with a sensitive surface, said component being constructed for its part on the basis of semiconductors ... | 03/06/2012 |
| 8124982 | Semiconductor light-emitting element and method for fabrication the same The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween. The group III nitride semicondu... | 02/28/2012 |
| 8124981 | Rugged semiconductor device architecture A wide bandgap silicon carbide device has an avalanche control structure formed in an epitaxial layer of a first conductivity type above a substrate that is connected to a first electrode of the device. A first region of a second conductivity type is in the upper su... | 02/28/2012 |
| 8101954 | Photo-semiconductor device and method of manufacturing the same A photo-semiconductor device comprises a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the... | 01/24/2012 |
| 8097885 | Compound semiconductor film, light emitting film, and manufacturing method thereof Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film and a light emitting material are laminated and with which high-inten... | 01/17/2012 |
| 8093597 | In situ dopant implantation and growth of a III-nitride semiconductor body In one embodiment a method enabling in situ dopant implantation during growth of a III-nitride semiconductor body, comprises establishing a growth environment for the III-nitride semiconductor body in a composite III-nitride chamber having a dopant implanter and a g... | 01/10/2012 |
| 8053782 | Single and few-layer graphene based photodetecting devices A photodetector which uses single or multi-layer graphene as the photon detecting layer is disclosed. Multiple embodiments are disclosed with different configurations of electrodes. In addition, a photodetector array comprising multiple photodetecting elements is di... | 11/08/2011 |
| 8035111 | Integrated nitride and silicon carbide-based devices Monolithic electronic devices are providing including a high bandgap layer. A first type of nitride device is provided on a first portion of the high bandgap layer, the first nitride device including first and second implanted regions respectively defining source an... | 10/11/2011 |
| 8030660 | Semiconductor device A semiconductor device includes: a first semiconductor layer including AlXGa1-XN (0≦X≦1); a second semiconductor layer provided on the first semiconductor layer, including AlYGa1-YN (0≦Y≦1, X | 10/04/2011 |
| 8022412 | Epitaxial structure having low defect density An epitaxial structure having a low defect density includes: a base layer; a first epitaxial layer having a plurality of concentrated defect groups, and an epitaxial surface that has a plurality of first recesses corresponding in position to the concentrated defect ... | 09/20/2011 |
| 8022413 | Group III nitride semiconductor substrate and method for cleaning the same A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm−2 is produced by cleaning the surface having a dangling bond density of higher than 14.0 nm−2 with a cleaning agent contai... | 09/20/2011 |
| 8008668 | Doped diamond LED devices and associated methods LED devices and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the... | 08/30/2011 |
| 7994512 | Gallium nitride based diodes with low forward voltage and low reverse current operation New Group III based diodes are disclosed having a low on state voltage (Vf) and structures to keep reverse current (Irev) relatively low. One embodiment of the invention is Schottky barrier diode made from the GaN material system in which the F... | 08/09/2011 |
| 7968892 | Silicon carbide semiconductor device A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a s... | 06/28/2011 |
| 7968893 | Semiconductor light emitting device and method of manufacturing the same Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input v... | 06/28/2011 |
| 7956364 | Thin film light emitting diode Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer benefi... | 06/07/2011 |
| 7928446 | Group III nitride semiconductor substrate and method for cleaning the same A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm−2 is produced by cleaning the surface having a dangling bond density of higher than 14.0 nm−2 with a cleaning agent contai... | 04/19/2011 |
| 7888684 | Light emitting device and method of producing light emitting device with a semiconductor includes one of chalcopyrite and oxychacogenide There has not been a DC drive type light emitting device capable of providing high brightness. The present invention provides a light emitting device, including: a pair of electrodes; a light emitter placed between the electrodes; and a semiconductor laminated to be... | 02/15/2011 |
| 7863624 | Silicon carbide on diamond substrates and related devices and methods A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal co... | 01/04/2011 |
| 7863623 | Semiconductor light emitting device A semiconductor light emitting device includes a substrate 11 including a group III-V nitride semiconductor; a first-conductivity-type layer 12 formed on the substrate 11, the first-conductivity-type layer including a plurality of group III-V ni... | 01/04/2011 |
| 7858989 | Device and process of forming device with device structure formed in trench and graphene layer formed thereover A graphene-based device is formed with a substrate having a trench therein, a device structure on the substrate and within the trench, a graphene layer over the device structure, and a protective layer over the graphene layer. Fabrication techniques include forming ... | 12/28/2010 |
| 7858990 | Device and process of forming device with pre-patterned trench and graphene-based device structure formed therein A graphene-based device is formed with a trench in one or more layers of material, a graphene layer within the trench, and a device structure on the graphene layer and within the trench. Fabrication techniques includes forming a trench defined by one or more layers ... | 12/28/2010 |
| 7800116 | Group III-nitride semiconductor device with a cap layer A semiconductor device includes: a first semiconductor layer which is made of a first group III nitride semiconductor; a cap layer which is formed on the first semiconductor layer, which is made of a second group III nitride semiconductor, and which has an opening f... | 09/21/2010 |
| 7795622 | Compound semiconductor device A compound semiconductor device having a transistor structure, includes a substrate, a first layer formed on the substrate and comprising GaN, a second layer formed over the first layer and containing InN whose lattice constant is larger than the first layer, a thir... | 09/14/2010 |
| 7786486 | Double-sided package for power module An electronic semiconductor package is described. The package has a wide band gap electronic semiconductor device requiring heat removal. On one side of the electronic semiconductor device is a first, thermally-conductive, electrically-insulative substrate having a ... | 08/31/2010 |
| 7772594 | High-heat-resistive semiconductor device The outer surface of a wide-gap semiconductor device is coated with a synthetic polymer compound containing one or more silicon-containing polymer having a bridged structure formed by a siloxane (Si—O—Si bond structure). The synthetic polymer compound may includ... | 08/10/2010 |
| 7768016 | Carbon diode array for resistivity changing memories An integrated circuit and method for manufacturing an integrated circuit are described. In one embodiment, the integrated circuit includes a memory cell including a resistivity changing memory element and a carbon diode electrically coupled to the resistivity changi... | 08/03/2010 |
| 7763892 | Group III nitride semiconductor device and epitaxial substrate Affords a Group III nitride semiconductor device having a structure that can improve the breakdown voltage. A Schottky diode (11) consists of a Group III nitride support substrate (13), a gallium nitride region (15), and a Schottky electrode ( | 07/27/2010 |
| 7705361 | Heterojunction bipolar transistor having (In)(Al) GaAsSb/InGaAs base-collector structure A heterojunction bipolar transistor (HBT) has a (In)(Al)GaAsSb/InGaAs base-collector structure. A discontinuous base-collector conduction band forms a built-in electric field to infuse electrons into a collector structure effectively, while a discontinuous base-coll... | 04/27/2010 |
| 7692198 | Wide-bandgap semiconductor devices A device 100 comprising a substrate 115 having crystal-support-structures 110 thereon, and a III-V crystal 210. The III-V crystal is on a single contact region 140 of one of the crystal-support-structures. An area of the contact re... | 04/06/2010 |
| 7646024 | Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface A structure is disclosed that reduces the forward voltage across the interface between silicon carbide and Group III nitride layers. The structure includes a conductive silicon carbide substrate and a conductive layer of aluminum gallium nitride on the silicon carbi... | 01/12/2010 |
| 7642556 | Compound semiconductor element resistible to high voltage A compound semiconductor element is provided which electrically connects an electrode 3 formed on one main surface 2a of a compound semiconductor region 2 with a substrate 5 to fix an electric potential of substrate 5 at an ... | 01/05/2010 |
| 7629615 | Light emitting element and method of making same A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1-X-Y))2O3 where 0≦x≦1, 0≦y≦1 and 0≦x+... | 12/08/2009 |
| 7619257 | Devices including graphene layers epitaxially grown on single crystal substrates An electronic device comprises a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and a at least one epitaxial layer of graphene is dis... | 11/17/2009 |
| 7615787 | Photo-semiconductor device and method of manufacturing the same A photo-semiconductor device comprises a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the... | 11/10/2009 |
| 7601985 | Semiconductor light-emitting device A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity ... | 10/13/2009 |
| 7595507 | Semiconductor devices having gallium nitride epilayers on diamond substrates Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium... | 09/29/2009 |
| 7564061 | Field effect transistor and production method thereof A field effect transistor having a gate, a source, and a drain formed from metallic materials is disclosed that is able to supply a high driving current. In the field effect transistor, a source region, a drain region and a gate electrode are formed from silicide or... | 07/21/2009 |
