Did You Know...
...that the Slinky toy was the result of a failed attempt by engineer Richard James to produce an antivibration device for ship instruments? His goal was to develop a spring that would instantaneously counterbalance the wave motion that rocks a ship at sea. Instead, he developed the Slinky.
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| Number | Title | Issue Date |
| 8174023 | Method of fabricating memory cell A method of fabricating a memory cell includes following steps. First, a substrate is provided, and a control gate is formed on the substrate. Then, a dielectric layer is formed to cover the control gate and the substrate. Afterward, an α-SiGe layer is formed on th... | 05/08/2012 |
| 7902554 | Polysilicon film having smooth surface and method of forming the same A method of forming a polysilicon film having smooth surface using a lateral growth and a step-and-repeat laser process. Amorphous silicon formed in a first irradiation region of a substrate is crystallized to form a first polysilicon region by a first laser shot. T... | 03/08/2011 |
| 7659542 | Silicon plate, producing method thereof, and solar cell A polycrystalline silicon plate has grain boundary lines on a surface thereof, and at least one of the grain boundary lines is a quasi-linear grain boundary line (1). The silicon plate is used to produce a solar cell. The silicon plate is formed using a base ... | 02/09/2010 |
| 7453090 | Semiconductor device including a semiconductor substrate formed with a shallow impurity region A method of manufacturing a semiconductor device includes forming isolation regions, a gate insulator film and gate electrodes, implanting in the silicon substrate with impurity ions, annealing to recover crystallinity of the implanted silicon substrate without diff... | 11/18/2008 |
| 7427775 | Fabricating strained channel epitaxial source/drain transistors The mobility of carriers may be increased in strained channel epitaxial source/drain transistors. Doped silicon material may be blanket deposited after removing ion implanted source/drain regions. The blanket deposition forms amorphous films over non-source/drain ar... | 09/23/2008 |
| 7396712 | Thin film processing method and thin processing apparatus A thin film processing method for processing the thin film by irradiating an optical beam to the thin film. A unit of the irradiation of the optical beam includes a first and a second optical pulse irradiation to the thin film, and the unit of the irradiation is car... | 07/08/2008 |
| 7354477 | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and... | 04/08/2008 |
| 7335910 | Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and ... | 02/26/2008 |
| 7303630 | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate Dotted seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations from neighboring regions... | 12/04/2007 |
| 7297983 | Method for fabricating an integrated circuit on a semiconductor substrate Integrated circuit device comprising a conductive layer and a poly-crystalline silicon layer, wherein the integrated circuit device further comprises an intermediate counter-stress layer. This intermediate counter-stress layer is arranged between the poly-crystallin... | 11/20/2007 |
| 7279404 | Process for fabricating strained layers of silicon or of a silicon/germanium alloy A process for fabricating a strained layer of silicon or of a silicon/germanium alloy, includes: a) the formation of a layer (2) of silicon or of a silicon/germanium alloy on a layer (1) of a material having a modifiable lattice parameter; and | 10/09/2007 |
| 7268026 | Method for manufacturing both a semiconductor crystalline film and semiconductor device A method of forming a crystal grain for use in a semiconductor manufacturing process, the method including the steps of forming an oxide silicon film on a glass substrate, etching at least one hole at a predetermined location in the oxide silicon film, forming an am... | 09/11/2007 |
| 7268367 | Thin film devices for flat panel displays and methods for forming the same Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the ... | 09/11/2007 |
| 7256109 | Isotropic polycrystalline silicon A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of... | 08/14/2007 |
| 7247882 | Display device There is provided a semiconductor device having TFTs whose thresholds can be controlled. There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor active layer a second g... | 07/24/2007 |
| 7224028 | Semiconductor device that includes a gate insulating layer with three different thicknesses In the fabrication of semiconductor devices such as active matrix displays, the need to pattern resist masks in photolithography increases the number of steps in the fabrication process and the time required to complete them and consequently represents a substantial... | 05/29/2007 |
| 7223665 | Method for manufacturing dielectric thin film capacitor A method for manufacturing a dielectric thin film capacitor of the present invention includes the steps of coating a liquid raw material on a substrate and performing a first heat treatment to form an adhesive layer, forming a lower electrode on the adhesive layer, ... | 05/29/2007 |
| 7217945 | Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby The present invention relates to a process of forming a phase-change memory. A lower electrode is disposed in a first dielectric film. The lower electrode comprises an upper section and a lower section. The upper section extends beyond the first dielectric film. Res... | 05/15/2007 |
| 7211501 | Method and apparatus for laser annealing Numerous embodiments of a method and apparatus for laser annealing are disclosed. In one embodiment, a method of laser annealing includes performing one or more annealing processes on one or more portions of a semiconductor device, where one or more annealing proces... | 05/01/2007 |
| 7205033 | Method for forming polycrystalline silicon film of polycrystalline silicon TFT Disclosed is a method for forming a polycrystalline silicon film of a polycrystalline silicon thin film transistor. The method includes a step of crystallizing an amorphous silicon film deposited on a glass substrate by irradiating a laser beam onto the amorphous si... | 04/17/2007 |
| 7202499 | Semiconductor device including two transistors and capacitive part An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not overlap with the LDD region. The TFT is made from crystalline semiconduc... | 04/10/2007 |
| 7193240 | Sequential lateral solidification mask with stripe-shaped portions for transmitting laser light A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon are provided. The mask includes a light absorptive portion for blocking a laser beam and a plurality of stripe-shaped light transmitting portions for passing t... | 03/20/2007 |
| 7183571 | Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same A polycrystalline silicon thin film to be used in display devices, the thin film having adjacent primary grain boundaries that are not parallel to each other, wherein an area surrounded by the primary grain boundaries is larger than 1 μm2, a fabrication ... | 02/27/2007 |
| 7176479 | Nitride compound semiconductor element A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline layer of AlN formed on said sapphire substrate; a second single crys... | 02/13/2007 |
| 7157737 | Structures with seeded single-crystal domains Single-crystal devices and a method for forming semiconductor film single-crystal domains are provided. The method comprises: forming a substrate, such as glass or Si; forming an insulator film overlying the substrate; forming a single-crystal seed overlying the sub... | 01/02/2007 |
| 7154153 | Memory device A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The data charge retention time on the... | 12/26/2006 |
| 7148510 | Electronic apparatus having a protective circuit A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from esca... | 12/12/2006 |
| 7148122 | Bonding of substrates In one embodiment, a method comprises placing a first and a second substrate into a reaction chamber, the first substrate being made of an indium antimonide material and having a first surface and the second substrate being made of a silicon or a silicon dioxide mat... | 12/12/2006 |
| 7148507 | Semiconductor device having thin film transistor with position controlled channel formation region A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowerin... | 12/12/2006 |
| 7141821 | Semiconductor device having an impurity gradient in the impurity regions and method of manufacture The active layer of an n-channel TFT is formed with a channel forming region, a first impurity region, a second impurity region and a third impurity region. In this case, the concentration of the impurities in each of the impurity regions is made higher as the regio... | 11/28/2006 |
| 7142398 | Electrostatic discharge and electrical overstress protection for magnetic heads A magnetoresistive head assembly of the present invention includes a magnetoresistive sensor and an electrostatic discharge and electrical overstress protection circuit. The magnetoresistive sensor is capable of having conducted therethrough oppositely-directed firs... | 11/28/2006 |
| 7115903 | Semiconductor device and semiconductor device producing system An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. ... | 10/03/2006 |
| 7115487 | Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit A process for producing a crystalline thin film is provided which comprises melting and resolidifying a starting thin film having regions different in the state coexisting continuously. A small region of the starting thin film has a size distribution of number conce... | 10/03/2006 |
| 7115905 | Semiconductor device including forming an amorphous silicon layer over and reacting with a silicide layer A semiconductor device has a SALICIDE structure with low leakage currents, while maintaining shallow source and drain regions. A method of manufacturing the semiconductor device includes forming source and drain regions in a first semiconductor layer, the source reg... | 10/03/2006 |
| 7112826 | Single crystal GaN substrate semiconductor device Seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighbo... | 09/26/2006 |
| 7105865 | AlInGaN mixture crystal substrate Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0 | 09/12/2006 |
| 7102170 | Display device The irregularities of characteristics of a pair of transistors, which are prepared by a pseudo single crystallizing technique, are reduced. To achieve this, semiconductor layers are formed on a substrate and have pseudo single crystal regions therein, and a pluralit... | 09/05/2006 |
| 7098601 | Image display device The present invention provides an image display device in which peripheral circuits including a D/A converter are integrated on a glass substrate while realizing high-precision image display. An image display device of the invention has a display area (100) c... | 08/29/2006 |
| 7094610 | Magnetic sensor based on efficient spin injection into semiconductors A magnetic sensor using efficient injection of spin polarized electrons at room temperature can be fabricated by forming a semiconductor layer sandwiched between ferromagnets and forming δ-doped layers between the semiconductor layer and the ferromagnets. A sensing... | 08/22/2006 |
| 7087971 | Magnetic sensor based on efficient spin injection into semiconductors A magnetic sensor based on efficient spin injection of spin-polarized electrons from ferromagnets into semiconductors and rotation of electron spin under a magnetic field. Previous spin injection structures suffered from very low efficiency (less than 5). A spin inj... | 08/08/2006 |
