Quotables
"Inventing is a combination of brains and materials. The more brains you use, the less material you need."
Charles Kettering
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7843061 | Transparent substrate with invisible electrodes and device incorporating the same The electrodes (7) and the contact zones (15) are structured in a film of a transparent conductive oxide (TCO), deposited on a transparent support (1) possibly coated with an intermediate film (3), while being separated by dielectric spac... | 11/30/2010 |
| 7663236 | Semiconductor electrode containing phosphate and solar cell using the same Disclosed herein is a semiconductor electrode with improved power conversion efficiency through inhibition of recombination reactions of electrons. The semiconductor electrode comprises a transparent electrode consisting of a substrate and a conductive material coat... | 02/16/2010 |
| 7420215 | Transparent conductive film, semiconductor device and active matrix display unit A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact ... | 09/02/2008 |
| 7365369 | Nitride semiconductor device A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type co... | 04/29/2008 |
| 7361931 | Active matrix electro-luminescent display with an organic leveling layer A resin material having a small relative dielectric constant is used as a layer insulation film 114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration... | 04/22/2008 |
| 7348656 | Power semiconductor device with integrated passive component A power semiconductor device that includes a passive component, e.g., a capacitor, mechanically and electrically coupled to at least one pole thereof. ... | 03/25/2008 |
| 7332746 | Light-emitting apparatus A novel configuration of a light-emitting apparatus that can emit white light, in which a primary light source composed of a group III nitride compound semiconductor is used in combination with a secondary light source including a fluorescent material which emits li... | 02/19/2008 |
| 7309895 | Semiconductor device An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selecte... | 12/18/2007 |
| 7304325 | Group III nitride compound semiconductor light-emitting device A semiconductor laminate containing a light-emitting layer is etched to reveal a side surface. A reflection surface opposite to the side surface of the semiconductor laminate is provided in one and the same chip as the semiconductor laminate. A groove may be formed ... | 12/04/2007 |
| 7293852 | Deposition of soluble materials using an inkjet print head and CCD microscope A method and apparatus for depositing a soluble material, such as an organic polymer, onto a substrate uses an inkjet print head. The substrate is viewed from the underside by a CCD microscope during the deposition of an organic polymer droplet onto a well provided ... | 11/13/2007 |
| 7294906 | Wiring technique An apparatus for supplying electrical power to a movable member. The apparatus includes a fixed member, the movable member moving relative to the fixed member, a flexible wiring member having an end connected to the movable member and another end connected to the fi... | 11/13/2007 |
| 7285806 | Semiconductor device having an active region formed from group III nitride The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor.... | 10/23/2007 |
| 7285340 | Organic electroluminescent device and method of manufacturing the same An organic electroluminescent device which has a low moisture permeability and an oxygen permeability. The organic electroluminescent device includes a substrate, an organic light-emitting unit having a sequentially stacked structure of a first electrode, an organic... | 10/23/2007 |
| 7247346 | Combinatorial fabrication and high-throughput screening of optoelectronic devices Methods and apparatus for the rapid and parallel synthesis of optoelectronic cell devices and for the high-throughput screening of such devices for useful properties are disclosed. The methods comprise the parallel synthesis of arrays of optoelectronic devices fabri... | 07/24/2007 |
| 7214971 | Semiconductor light-receiving device A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the b... | 05/08/2007 |
| 7205578 | Semiconductor component which emits radiation, and method for producing the same This invention describes a radiation-emitting semiconductor component with the a multilayered structure (4) that contains a radiation-emitting active layer (5), and a window (1) transparent to radiation that has a first principal face (2)... | 04/17/2007 |
| 7202511 | Near-infrared visible light photon counter Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1–2 microns to an intrinsic semic... | 04/10/2007 |
| 7195942 | Radiation emitting semiconductor device Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical device. A radiation-emitting semiconductor device with a multilayer structure (100) comprising a radiation-emitting active layer (10), with elect... | 03/27/2007 |
| 7189992 | Transistor structures having a transparent channel Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material sele... | 03/13/2007 |
| 7135698 | Multi-spectral infrared super-pixel photodetector and imager A multi-spectral super-pixel photodetector for detecting four or more different bands of infrared radiation is described. The super-pixel photodetector includes two or more sub-pixel photodetectors, each of which includes a diffractive resonant optical cavity that r... | 11/14/2006 |
| 7119411 | Interconnect structure for TFT-array substrate and method for fabricating the same An interconnect structure connecting two isolated metal lines in a non-display area of a TFT-array substrate. A first metal line is disposed on the substrate, covered with a first insulating layer. A second metal line is disposed on the first insulating layer and co... | 10/10/2006 |
| 7115969 | Fixed parallel plate MEMS capacitor microsensor and microsensor array and method of making same A fixed parallel plate micro-mechanical systems (MEMS) based sensor is fabricated to allow a dissolved dielectric to flow through a porous top plate, coming to rest on a bottom plate. A post-deposition bake ensures further purity and uniformity of the dielectric lay... | 10/03/2006 |
| 7105850 | GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivity Disclosed is a GaN LED structure with a p-type contacting layer using Al—Mg-codoped In1−yGayN grown at low temperature, and having low resistivity. The LED structure comprises, from the bottom to top, a substrate, a buffer layer, an n-type ... | 09/12/2006 |
| 7099065 | Micromirrors with OFF-angle electrodes and stops A spatial light modulator is disclosed, along with methods for making such a modulator that comprises an array of mirror devices each having at least a first electrode and a second electrode. The first electrode is designated for driving the mirror plate of the micr... | 08/29/2006 |
| 7087936 | Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction A light-emitting device includes a substrate that is at least partially transparent to optical radiation and has a first index of refraction. A diode region is disposed on a first surface of the substrate and is configured to emit light responsive to a voltage appli... | 08/08/2006 |
| 7083996 | Nitride semiconductor device and manufacturing method thereof A nitride semiconductor device includes a GaN substrate having a single-crystal GaN layer at least on its surface and plurality of device-forming layers made of nitride semiconductor. The device-forming layer contacting the GaN substrate has a coefficient of thermal... | 08/01/2006 |
| 7084503 | Semiconductor device and fabricating method thereof The present invention provides a semiconductor device in which occurrence of disclination caused by steps in a contact portion and steps between pixel electrodes is prevented. A method of fabricating a semiconductor device according to the invention includes forming... | 08/01/2006 |
| 7078737 | Light-emitting device An InGaN-based light-emitting diode that emits light in blue, for example, is mounted on a support substrate as a semiconductor light-emitting element, and a transparent film is fixed to the support substrate so as to cover the semiconductor light-emitting element. ... | 07/18/2006 |
| 7061106 | Structure of image sensor module and a method for manufacturing of wafer level package The present invention discloses an image sensor module and forming method of wafer level package. The image sensor module comprises an isolating base, a wafer level package, a lens holder, and a F.P.C.. The wafer level package having a plurality of image sensor dies... | 06/13/2006 |
| 7030004 | Method for forming bond pad openings The invention provides a method for forming bond pad openings through a three-layer passivation structure, which protects the semiconductor device prior to bonding and packaging. Two passivation layers are formed over a semiconductor device with bond pads formed the... | 04/18/2006 |
| 7029529 | Method and apparatus for metallization of large area substrates A system and method for processing large area substrates. In one embodiment, a system for processing large area substrates includes prep station, a stamping station and a stamp that is automatically moved between the stamping station and the prep station. The stampi... | 04/18/2006 |
| 7026713 | Transistor device having a delafossite material A transistor device includes a channel of p-type substantially transparent delafossite material. Source and drain contacts are interfaced to the channel. Gate dielectric is between a gate contact and the channel. ... | 04/11/2006 |
| 7023017 | Thin film transistor substrate of horizontal electric field type liquid crystal display device and fabricating method thereof A thin film transistor substrate of horizontal electric field type includes: a gate line and a first common line formed on a substrate to be in parallel to each other; a data line crossing the gate line and the first common line with a gate insulating film therebetw... | 04/04/2006 |
| 7015053 | Nitride semiconductor laser device A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor lase... | 03/21/2006 |
| 7015511 | Gallium nitride-based light emitting device and method for manufacturing the same For a light emitting device using gallium nitride (GaN), on a substrate are sequentially formed a GaN-based layer, an AlGaN-based layer, and a light emitting layer. To prevent cracks in the AGaN-based layer, the AlGaN-based layer is formed before planarization of th... | 03/21/2006 |
| 7009295 | Semiconductor device A semiconductor device includes a semiconductor chip having a main surface provided with an integrated circuit including a photoelectric converter and a first wiring for electrically connecting the integrated circuit of the semiconductor chip to respective external ... | 03/07/2006 |
| 7002180 | Bonding pad for gallium nitride-based light-emitting device A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding... | 02/21/2006 |
| 7002241 | Packaging of semiconductor device with a non-opaque cover Packages of semiconductor devices with non-opaque covers and methods for making the packages. The invention allows an encapsulant to be used with a non-opaque cover. By ensuring the cover is attached to a die in such a way as to expose bonding pads while sealing in ... | 02/21/2006 |
| 6998279 | Method of mounting light emitting element The present invention provides a method of mounting a light emitting element, in which a light emission point can be positioned at high accuracy with respect to the mounting member. A semiconductor laser element is placed on a matching stage. Next, a position and an... | 02/14/2006 |
| 6958261 | Optical sensor package An image sensor device includes a QFN type leadframe having a central die attach flag and an outer bonding pad area having a plurality of bonding pads. A sensor IC is attached to the flag. The IC has a first surface with an active area and a peripheral bonding pad a... | 10/25/2005 |
