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| Number | Title | Issue Date |
| 8159068 | Semiconductor device A semiconductor device includes: a semiconductor layer composed of one of GaAs based semiconductor, InP-based semiconductor, and GaN-based semiconductor; a first silicon nitride film that is provided on the semiconductor layer, and of which an end portion is in cont... | 04/17/2012 |
| 7834456 | Electrical contacts for CMOS devices and III-V devices formed on a silicon substrate A semiconductor structure having a substrate, a seed layer over the substrate; a silicon layer disposed on the seed layer; a transistor device in the silicon layer; a III-V device disposed on the seed layer; and a plurality of electrical contacts, each one of the el... | 11/16/2010 |
| 7692298 | III-V nitride semiconductor device comprising a concave shottky contact and an ohmic contact A two-dimensional carrier is generated in the vicinity of an interface that is a hetero interface between a semiconductor layer and a semiconductor layer. Two concave portions are formed so as to extend from a primary surface as far as the interface. An electrode th... | 04/06/2010 |
| 7436045 | Gallium nitride-based semiconductor device A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride (GaN) compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the... | 10/14/2008 |
| 7420227 | Cu-metalized compound semiconductor device The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production. ... | 09/02/2008 |
| 7417264 | Top-emitting nitride-based light emitting device and method of manufacturing the same Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ... | 08/26/2008 |
| 7402841 | Gallium nitride-based compound semiconductor light-emitting device and electrode for the same An object of the present invention is to provide a light-permeable electrode for use in a gallium nitride-based compound semiconductor light-emitting device, the electrode having improved light permeability and contact resistance. The inventive electrode comp... | 07/22/2008 |
| 7368822 | Copper metalized ohmic contact electrode of compound device The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resis... | 05/06/2008 |
| 7368369 | Method for activating P-type semiconductor layer A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprise... | 05/06/2008 |
| 7348284 | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow A non-planar tri-gate p-MOS transistor structure with a strained channel region and a non-planar tri-gate integrated strained complimentary metal-oxide-semiconductor (CMOS) structure are described. A relaxed Si1-x Gex layer is formed on the sil... | 03/25/2008 |
| 7335924 | High-brightness light emitting diode having reflective layer An LED structure is disclosed herein, which comprises, sequentially arranged in the following order, a light generating structure, a non-alloy ohmic contact layer, a metallic layer, and a substrate. As a reflecting mirror, the metallic layer is made of a pure metal ... | 02/26/2008 |
| 7329956 | Dual damascene cleaning method A semiconductor structure having a pore sealed portion of a dielectric layer is provided. Exposed pores of the dielectric material are sealed using an anisotropic plasma so that pores along the bottom of the opening are sealed, and pores along sidewalls of the openi... | 02/12/2008 |
| 7326965 | Surface-emitting type device and its manufacturing method A surface-emitting type device includes a substrate including a first face, a second face that is tilted with respect to the first face and has a plane index different from a plane index of the first face, and a third face that is tilted with respect to the second f... | 02/05/2008 |
| 7288803 | III-nitride power semiconductor device with a current sense electrode A III-nitride power semiconductor device that includes a current sense electrode. ... | 10/30/2007 |
| 7285857 | GaN-based III—V group compound semiconductor device and p-type electrode for the same Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a... | 10/23/2007 |
| 7262436 | III-nitride semiconductor light emitting device having a silver p-contact A light emitting device includes an n-type semiconductor layer, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a... | 08/28/2007 |
| 7259444 | Optoelectronic device with patterned ion implant subcollector In one embodiment, an optoelectronic device is provided having a pin photo diode including a semi-insulating substrate or layer, with a patterned implant region of a first dopant type. The pin photo diode includes an upper layer having semiconductor material with a ... | 08/21/2007 |
| 7253015 | Low doped layer for nitride-based semiconductor device A repeatable and uniform low doped layer is formed using modulation doping by forming alternating sub-layers of doped and undoped nitride semiconductor material atop another layer. A Schottky diode is formed of such a low doped nitride semiconductor layer disposed a... | 08/07/2007 |
| 7247891 | Semiconductor device and method for fabricating the same A semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having such a composition as to generate a 2-dimensional electron gas layer in the upper portion of the first nit... | 07/24/2007 |
| 7229493 | 3-5 group compound semiconductor, process for producing the same, and compound semiconductor element using the same Provided is an excellent p-type nitride type 3-5 group compound semiconductor having escellent electrical properties such as a low contact resistance to an electrode metal, a low ohmic property, etc., by heat-treating a nitride type 3-5 group compound semiconductor ... | 06/12/2007 |
| 7208752 | Structure and manufacturing of gallium nitride light emitting diode A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semic... | 04/24/2007 |
| 7202510 | Semiconductor luminescent device and manufacturing method thereof A first principal plane faces a second principal plane of a p-type Ga N compound semiconductor that is in contact with an MQW luminescent layer. On the surface of the first principal plane, a first region made up of the p-type Ga N compound semiconductor including a... | 04/10/2007 |
| 7193247 | Gallium nitride compound semiconductor device A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-t... | 03/20/2007 |
| 7193279 | Non-planar MOS structure with a strained channel region An embodiment is a non-planar MOS transistor structure including a strained channel region. The combination of a non-planar MOS transistor structure, and in particular an NMOS tri-gate transistor, with the benefits of a strained channel yields improved transistor dr... | 03/20/2007 |
| 7193249 | Nitride-based light emitting device and method of manufacturing the same Provided are a nitride-based light emitting device using a p-type conductive transparent thin film electrode layer and a method of manufacturing the same. The nitride-based light emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cla... | 03/20/2007 |
| 7193322 | Sacrificial shallow trench isolation oxide liner for strained-silicon channel CMOS devices A strained-silicon (Si) channel CMOS device shallow trench isolation (STI) oxide region, and method for forming same have been provided. The method forms a Si substrate with a relaxed-SiGe layer overlying the Si substrate, or a SiGe on insulator (SGOI) substrate wit... | 03/20/2007 |
| 7190076 | Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same A GaN layer is formed on a sapphire substrate through an AlN buffer layer and doped with Mg to prepare a laminate (referred to as “GaN substrate”). A metal (Pt and Ni) electrode 50 nm thick is formed on the GaN substrate by (1) vapor deposition after the GaN sub... | 03/13/2007 |
| 7187014 | Semiconductor device and method for fabricating the same A semiconductor device has a sapphire substrate, a semiconductor layer made of GaN provided on the sapphire substrate, a multilayer film provided on the semiconductor layer, and an electrode in ohmic contact with the multilayer film. The multilayer film has been for... | 03/06/2007 |
| 7166965 | Waveguide and microwave ion source equipped with the waveguide A waveguide of the present invention comprises a waveguide main body made of a material selected from a boron nitride or an aluminum oxide, and a thin film made of a titanium nitride to cover an outer peripheral surface of the waveguide main body. The waveguide of t... | 01/23/2007 |
| 7154180 | Electronic device, method of manufacture of the same, and sputtering target In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film ... | 12/26/2006 |
| 7154121 | Light emitting device with a micro-reflection structure carrier A light emitting device includes a micro-reflection structure carrier, which is formed by performing etching process on a carrier, a reflection layer, a light emitting layer, and a transparent adhesive layer, wherein the reflection layer is formed over the micro-ref... | 12/26/2006 |
| 7145237 | Electrode employing nitride-based semiconductor of III-V group compound, and producing method thereof An electrode employing a nitride-based semiconductor of III–V group compound having a favorable ohmic characteristic and a producing method thereof are provided. The electrode includes a nitride-based semiconductor layer of III–V group compound, an electrode met... | 12/05/2006 |
| 7141830 | Semiconductor light emitting device and method of making the same The invention provides a semiconductor light emitting device and the method of making it. The semiconductor light emitting device, according to the invention, includes an undoped InxGAyAl2N film, as an Ohmic layer, formed between a t... | 11/28/2006 |
| 7135716 | Gallium nitride-based semiconductor light-emitting device A gallium nitride-based semiconductor light-emitting device includes a sapphire substrate having a nitridated upper surface; a polarity conversion layer formed on the sapphire substrate and made of MgN-based single ciystals; a first conductive gallium nitride-based ... | 11/14/2006 |
| 7135772 | Nitride semiconductor laser The present invention is a nitride compound semiconductor laser, in which a cleaved end face is flat, and a breakdown of a laser end face induced during an operation can be suppressed, which consequently enables a life to be prolonged. In the nitride compound semico... | 11/14/2006 |
| 7132695 | Light emitting diode having a dual dopant contact layer A light emitting diode with a dual dopant contact layer. The light emitting diode includes a substrate, a light emitting stacked structure formed on the substrate, a dual dopant contact layer formed on the light emitting stacked structure, and a transparent conducti... | 11/07/2006 |
| 7129550 | Fin-shaped semiconductor device A semiconductor layer in which a primary part of a FinFET is formed, i.e., a fin has a shape which is long in a direction x and short in a direction y. A width of the fin in the direction y changes on three stages. First, in a channel area between gate electrodes ea... | 10/31/2006 |
| 7109529 | Light-emitting semiconductor device using group III nitride compound A flip chip type of light-emitting semiconductor device using group III nitride compound includes a thick positive electrode. The positive electrode, which is made of at least one of silver (Ag), rhodium (Rh), ruthenium (Ru), platinum (Pt) and palladium (Pd), and an... | 09/19/2006 |
| 7110241 | Substrate A substrate has a base, an intermediate layer, a conductive layer, and conductive films. The base is a ceramic insulator. The intermediate layer is on a main surface of the base. The conductive layer is on the intermediate layer. The conductive films are on the cond... | 09/19/2006 |
| 7096873 | Method for manufacturing a group III nitride compound semiconductor device A method for manufacturing a group III nitride compound semiconductor device includes irradiating a surface of a wafer with ultraviolet rays to thereby clean a resist residue from the surface of the wafer, the surface including a group III nitride compound semicondu... | 08/29/2006 |
