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| Number | Title | Issue Date |
| 7476970 | Composition for forming insulating film and method for fabricating semiconductor device A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si—CH | 01/13/2009 |
| 7420227 | Cu-metalized compound semiconductor device The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production. ... | 09/02/2008 |
| 7402845 | Cascoded rectifier package A semiconductor package that includes a compound component and a diode arranged in a cascode configuration to function as a rectifier. ... | 07/22/2008 |
| 7402841 | Gallium nitride-based compound semiconductor light-emitting device and electrode for the same An object of the present invention is to provide a light-permeable electrode for use in a gallium nitride-based compound semiconductor light-emitting device, the electrode having improved light permeability and contact resistance. The inventive electrode comp... | 07/22/2008 |
| 7368822 | Copper metalized ohmic contact electrode of compound device The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resis... | 05/06/2008 |
| 7335924 | High-brightness light emitting diode having reflective layer An LED structure is disclosed herein, which comprises, sequentially arranged in the following order, a light generating structure, a non-alloy ohmic contact layer, a metallic layer, and a substrate. As a reflecting mirror, the metallic layer is made of a pure metal ... | 02/26/2008 |
| 7332752 | Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal An optoelectronic circuit includes a resonant cavity formed on a substrate and into which is injected an input digital optical signal that encodes bits of information (each bit representing an OFF logic level or an ON logic level). A heterojunction thyristor device,... | 02/19/2008 |
| 7333733 | Optoelectronic clock generator producing high frequency optoelectronic pulse trains with variable frequency and variable duty cycle and low jitter An optoelectronic pulse generator is provided that includes a thyristor detector/emitter device having an input port and an output port. The thyristor detector/emitter device is adapted to detect an input optical pulse supplied to the input port and to produce an ou... | 02/19/2008 |
| 7329956 | Dual damascene cleaning method A semiconductor structure having a pore sealed portion of a dielectric layer is provided. Exposed pores of the dielectric material are sealed using an anisotropic plasma so that pores along the bottom of the opening are sealed, and pores along sidewalls of the openi... | 02/12/2008 |
| 7315559 | Nitride semiconductor laser device and a method for improving its performance The present invention relates to a nitride semiconductor laser device provided with a window layer on a light-emitting end face of the resonator which comprises an active layer of nitride semiconductor between the n-type nitride semiconductor layers and the p-type n... | 01/01/2008 |
| 7285842 | Siloxane epoxy polymers as metal diffusion barriers to reduce electromigration Structures employing siloxane epoxy polymers as diffusion barriers adjacent conductive metal layers are disclosed. The siloxane epoxy polymers exhibit excellent adhesion to conductive metals, such as copper, and provide an increase in the electromigration lifetime o... | 10/23/2007 |
| 7247892 | Imaging array utilizing thyristor-based pixel elements An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each thyristor-based pixel element includes complementary n-type and p-ty... | 07/24/2007 |
| 7242034 | Method for fabricating a component having an electrical contact region, and component having an electrical contact region A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dop... | 07/10/2007 |
| 7190076 | Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same A GaN layer is formed on a sapphire substrate through an AlN buffer layer and doped with Mg to prepare a laminate (referred to as “GaN substrate”). A metal (Pt and Ni) electrode 50 nm thick is formed on the GaN substrate by (1) vapor deposition after the GaN sub... | 03/13/2007 |
| 7169673 | Atomic layer deposited nanolaminates of HfO/ZrOfilms as gate dielectrics A dielectric film containing HfO2/ZrO2 nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is ... | 01/30/2007 |
| 7157724 | Detection lamp A light source for testing sites using a fluorescent dye is described. The light source can include a low voltage lamp or a low heat generating lamp. An emission from the fluorescent dye can be detected through a filter lens, which can include a primary filter and a... | 01/02/2007 |
| 7145237 | Electrode employing nitride-based semiconductor of III-V group compound, and producing method thereof An electrode employing a nitride-based semiconductor of III–V group compound having a favorable ohmic characteristic and a producing method thereof are provided. The electrode includes a nitride-based semiconductor layer of III–V group compound, an electrode met... | 12/05/2006 |
| 7145184 | Nitride semiconductor element A nitride semiconductor element exhibiting low leakage current and high ESD tolerance includes an active layer of nitride semiconductor that is interposed between a p-sided layer and an n-sided layer, which respectively consist of a plurality of nitride semiconducto... | 12/05/2006 |
| 7135772 | Nitride semiconductor laser The present invention is a nitride compound semiconductor laser, in which a cleaved end face is flat, and a breakdown of a laser end face induced during an operation can be suppressed, which consequently enables a life to be prolonged. In the nitride compound semico... | 11/14/2006 |
| 7122812 | Leak detection lamp A light source for examining sites in heating, ventilating, and air conditioning systems for leaks using a fluorescent dye is described. The light source can include a low voltage lamp or a low heat generating lamp. ... | 10/17/2006 |
| 7115991 | Method for creating barriers for copper diffusion A barrier layer for a semiconductor device is provided. The semiconductor device comprises a dielectric layer, an electrically conductive copper containing layer, and a barrier layer separating the dielectric layer from the copper containing layer. The barrier layer... | 10/03/2006 |
| 7101780 | Method for manufacturing Group-III nitride compound semiconductor device After a p-seat electrode-forming layer is laminated onto a light-transmissive electrode-forming layer, a first heating step and a second heating step are carried out for alloying the two layers. In the first heating step, heat treatment is performed at a relatively ... | 09/05/2006 |
| 7088003 | Structures and methods for integration of ultralow-k dielectrics with improved reliability An improved back end of the line (BEOL) interconnect structure comprising an ultralow k (ULK) dielectric is provided. The structure may be of the single or dual damascene type and comprises a dense thin dielectric layer (TDL) between a metal barrier layer and the UL... | 08/08/2006 |
| 7076126 | Passivation of photonic integrated circuits (PICs) A photonic integrated circuit (PIC) comprises a plurality of integrated optically coupled components formed in a surface of the PIC and a passivating layer overlies at least a portion of the PIC surface. The overlying passivating layer comprises a material selected ... | 07/11/2006 |
| 7061110 | Ohmic contact to semiconductor devices and method of manufacturing the same An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a... | 06/13/2006 |
| 7057210 | Electrode for light-emitting semiconductor devices and method of producing the electrode An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed... | 06/06/2006 |
| 7037741 | Compound semiconductor optoelectronic device A method for manufacturing a compound semiconductor optoelectronic device is proposed. There are steps of: forming an optoelectronic device epitaxial wafer, the optoelectronic device epitaxial wafer containing a V-shaped pit due to threading dislocation; forming an ... | 05/02/2006 |
| 7023030 | MISFET A metal insulator semiconductor field effect transistor (MISFET) is disclosed comprising a source layer being made with a material having a source band-gap (EG2) and a source mid-gap value (EGM2), the source layer having a source Fermi-Level (EF2 | 04/04/2006 |
| 7018915 | Group III nitride compound semiconductor device and method for forming an electrode An AlN buffer layer 2; a silicon (Si)-doped GaN high-carrier-concentration n+ layer 3; an Si-doped n-type Al0.07Ga0.93N n-cladding layer 4; an Si-doped n-type GaN n-guide layer 5; an active layer 6 ... | 03/28/2006 |
| 7015120 | Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation A method of fabricating a semiconductor device includes the steps of forming (or providing) a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well str... | 03/21/2006 |
| 7012274 | Modulation doped thyristor and complementary transistors combination for a monolithic optoelectronic integrated circuit A thyristor and family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate (149) with an epitaxial layer structure comprised of two modulation doped transistor structures inverted with respect to each other. The transis... | 03/14/2006 |
| 7012332 | Semiconductor device having sealing structure for wide gap type semiconductor chip A semiconductor chip and connection ends of corresponding external electrode terminals are encapsulated with a glass based sealing material, and the semiconductor chip includes a wide gap semiconductor element, and the electrodes of the semiconductor chip are connec... | 03/14/2006 |
| 6995407 | Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices A photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices that are configured to convert a digital word encoded by a parallel digital optical signal (e.g., a plurality of synchronous optical bits) to an output analog electrical... | 02/07/2006 |
| 6992317 | Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films This invention discloses novel device structures for full color flat panel displays utilizing pseudomorphically cladded quantum dot nanocrystals. Different colors are obtained by changing the core size and composition of the quantum dots while maintaining a nearly d... | 01/31/2006 |
| 6979842 | Opto-electronic component with radiation-transmissive electrical contact layer An optoelectronic component with an epitaxial semiconductor layer sequence having an active zone that emits electromagnetic radiation, and at least one electrical contact region having at least one radiation-transmissive electrical contact layer, which contains ZnO ... | 12/27/2005 |
| 6977954 | Semiconductor laser array device employing modulation doped quantum well structures An optoelectronic integrated circuit comprises a substrate, a multilayer structure formed on the substrate, and an array of thyristor devices and corresponding resonant cavities formed in the multilayer structure. The resonant cavities, which are adapted to process ... | 12/20/2005 |
| 6974969 | P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer A high performance bipolar transistor device is realized from a series of layers formed on a substrate, the series of layers including a first set of one or more layers each comprising n-type dopant material, a second set of layers forming a p-type modulation doped ... | 12/13/2005 |
| 6961231 | Interposer providing low-inductance decoupling capacitance for a packaged integrated circuit Structures that provide decoupling capacitance to packaged IC devices with reduced capacitor and via parasitic inductance. A capacitive interposer structure is physically interposed between the packaged IC and the PCB, thus eliminating the leads and vias that traver... | 11/01/2005 |
| 6954473 | Optoelectronic device employing at least one semiconductor heterojunction thyristor for producing variable electrical/optical delay An optoelectronic integrated circuit includes a resonant cavity formed on a substrate. A heterojunction thyristor device is formed in the resonant cavity and operates to detect an input optical pulse (or input electrical pulse) and produce an output optical pulse vi... | 10/11/2005 |
| 6936839 | Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same A family of optical waveguide structures and high speed optoelectronic/transistor devices are obtained from a multilayer structure that includes a modulation doped quantum well structure formed over a DBR mirror. The optical waveguide structure is realized by implan... | 08/30/2005 |
