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| Number | Title | Issue Date |
| 8174121 | Semiconductor device and manufacturing method thereof A semiconductor device is provided. The semiconductor device includes a substrate in which a first interlayer insulation layer having a first via hole and a first trench is formed. The semiconductor device also includes a first via plug and a first metal line respec... | 05/08/2012 |
| 8125082 | Reduction of silicide formation temperature on SiGe containing substrates A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co ... | 02/28/2012 |
| 8102049 | Semiconductor device including through electrode and method of manufacturing the same The present invention provides a semiconductor device including at least one of an insulating layer and a semiconductor layer each including a hole formed therein, and a through electrode provided in the hole. In the semiconductor device, the side wall of the hole i... | 01/24/2012 |
| 8084860 | Liquid crystal display device and manufacturing method therefor The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, an... | 12/27/2011 |
| 8076777 | Glass compositions used in conductors for photovoltaic cells The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. The thick film conductor compositions include one or more electrically functional powders and one or more glass frits dispersed in an or... | 12/13/2011 |
| 8063489 | Semiconductor integrated circuit device In semiconductor integrated circuit devices for vehicle use or the like, in general, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding or the like using a gold wire and the like for the convenience of mounting. ... | 11/22/2011 |
| 8049333 | Transparent conductors comprising metal nanowires A transparent conductor including a conductive layer coated on a substrate is described. More specifically, the conductive layer comprises a network of nanowires which may be embedded in a matrix. The conductive layer is optically transparent and flexible. It can be... | 11/01/2011 |
| 8022541 | Au-Ag based alloy wire for semiconductor package A gold-silver based wire for a semiconductor package has high humidity reliability as well as high dry reliability. The wire includes a first additive ingredient that contains 5˜15 wt % of at least one kind of elements from among first group elements composed of pa... | 09/20/2011 |
| 8013444 | Solder joints with enhanced electromigration resistance Electronic assemblies and solders used in electronic assemblies are described. One embodiment includes a die and a substrate, with a solder material positioned between the die and the substrate, the solder comprising at least 91 weight percent Sn, 0.4 to 1.0 weight ... | 09/06/2011 |
| 8008772 | Semiconductor device, manufacturing method thereof, composite metal body and manufacturing method thereof A semiconductor device having a structure in which a semiconductor element and a Cu or Ni electrode are connected by way of a bonding layer comprising Cu, and the Cu bonding layer and the Cu or Ni electrode are diffusion-bonded to each other. The bonding layer is fo... | 08/30/2011 |
| 7948081 | Carbon nanotube structure, a semiconductor device, a semiconductor package and a manufacturing method of a semiconductor device A semiconductor device uses a carbon nanotube structure, which reduces an electric resistance and a thermal resistance by increasing a density of the carbon nanotubes. An insulation film covers a first electrically conductive material. A second electrically conducti... | 05/24/2011 |
| 7884473 | Method and structure for increased wire bond density in packages for semiconductor chips A semiconductor package provides an IC chip on at least one package substrate and including signal bond pads, ground bond pads and power bond pads. The package substrate includes signal contact pads, ground contact pads and power contact pads which are respectively ... | 02/08/2011 |
| 7859108 | Flip chip package and method for manufacturing the same A flip chip package includes a substrate and a semiconductor chip. The substrate includes a substrate body, a metal wiring having a terminal part some of which is disposed in the substrate body, a solder resist pattern formed on the substrate body with an opening fo... | 12/28/2010 |
| 7830008 | Gold wire for connecting semiconductor chip Gold wire for connecting a semiconductor chip basically containing praseodymium in 0.0004 mass % to 0.02 mass % in range and, considering the bonding characteristics, containing beryllium or aluminum or both in limited ranges and, considering the precipitates formed... | 11/09/2010 |
| 7795730 | Wiring substrate and method of manufacturing thereof, and thin film transistor and method of manufacturing thereof The invention includes a first step for forming a first conductive layer composed of a high melting point metal to be in contact with an insulating layer; and a second step for forming a second conductive layer by discharging a composition containing a conductive ma... | 09/14/2010 |
| 7772699 | Semiconductor device and method of manufacturing the same A semiconductor device includes an electrode pad formed on a pad forming surface of a semiconductor integrated circuit chip, and a step formed on the pad forming surface to surround the electrode pad. A method of manufacturing the semiconductor device includes formi... | 08/10/2010 |
| 7719111 | Nanowire electromechanical device and method of fabricating the same A nanowire electronmechanical device with an improved structure and a method of fabricating the same prevent burning of two nanowires which are switched due to contact with each other while providing stable on-off switching characteristics. The nanowire electromecha... | 05/18/2010 |
| 7714438 | Bistable molecular mechanical devices with a band gap change activated by an electrical field for electronic switching, gating, and memory applications Molecular systems are provided for electric field activated switches, such as a crossed-wire device or a pair of electrodes to which the molecular system is linked by linking moieties. The crossed-wire device comprises a pair of crossed wires that form a junction wh... | 05/11/2010 |
| 7696624 | Nucleation method for atomic layer deposition of cobalt on bare silicon during the formation of a semiconductor device A method used to form a cobalt metal layer on a silicon surface using an atomic layer deposition (ALD) process comprises a treatment of the silicon surface prior to cobalt formation. Treatment includes serial exposure to one or more cycles comprising a titanium nitr... | 04/13/2010 |
| 7659624 | Semiconductor device having a nanoscale conductive structure A semiconductor device includes a substrate, an insulating layer having an opening, the opening exposing a portion of the substrate, a hydrophobic layer covering substantially only a sidewall and a top surface of the insulating layer, and a nanoscale conductive stru... | 02/09/2010 |
| 7420227 | Cu-metalized compound semiconductor device The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production. ... | 09/02/2008 |
| 7414313 | Polymeric conductor donor and transfer method The present invention relates to a donor laminate for transfer of a conductive layer comprising at least one electronically conductive polymer on to a receiver, wherein the receiver is a component of a device. The present invention also relates to methods pertinent ... | 08/19/2008 |
| 7411298 | Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and... | 08/12/2008 |
| 7411223 | Compound electrodes for electronic devices A compound electrode comprises a first layer that comprises at least one halide compound of at least one metal selected from the group consisting of alkali metals and alkaline-earth metals; and a second layer comprising an electrically conducting material. The secon... | 08/12/2008 |
| 7411259 | Wiring material and a semiconductor device having a wiring using the material, and the manufacturing method thereof An object of the present invention is to realize a semiconductor device having a high TFT characteristic. In manufacturing an active matrix display device, electric resistivity of the electrode material is kept low by preventing penetration of oxygen ion into the el... | 08/12/2008 |
| 7385287 | Preventing damage to low-k materials during resist stripping A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO c... | 06/10/2008 |
| 7382050 | Semiconductor device and method for producing the same A semiconductor device includes a tape carrier substrate having a flexible insulating film base, a plurality of conductor wirings provided on the film base, and wiring bumps respectively formed so as to cover an upper surface and both side surfaces of the conductor ... | 06/03/2008 |
| 7371674 | Nanostructure-based package interconnect An embodiment of the present invention is an interconnect technique. A nanostructure bump is formed on a die. The nanostructure bump has a template defining nano-sized openings and metallic nano-wires extending from the nano-sized openings. The die is attached to a ... | 05/13/2008 |
| 7372152 | Copper interconnect systems An integrated circuit (IC) may include a substrate, a first dielectric layer adjacent the substrate, and at least one trench in the first dielectric layer. The IC may also include a metal liner within the at least one trench, and a first conductive region including ... | 05/13/2008 |
| 7361589 | Copper interconnect systems which use conductive, metal-based cap layers An integrated circuit (IC) may include a substrate, a first dielectric layer adjacent the substrate, and at least one trench in the first dielectric layer. The IC may also include a metal liner within the at least one trench, and a first conductive region including ... | 04/22/2008 |
| 7351655 | Copper interconnect systems which use conductive, metal-based cap layers An integrated circuit (IC) may include a substrate, a first dielectric layer adjacent the substrate, and at least one trench in the first dielectric layer. The IC may also include a metal liner within the at least one trench, and a first conductive region including ... | 04/01/2008 |
| 7332810 | Integrated circuit device and method of producing the same An integrated circuit device having vias having good resistance to migration causing the breaking of a wiring line, or an integrated circuit device having a wiring structure that is fined by breaking the limit of lithography technique is provided. The former device ... | 02/19/2008 |
| 7327031 | Semiconductor device and method of manufacturing the same There is provided a solution to the problem of the poor adhesion in the pad portion while inhibiting the dishing in the pad portion. An SiON film, which covers insulating areas and has an opening above Cu pad areas, is formed, and a barrier metal film is formed in t... | 02/05/2008 |
| 7323218 | Synthesis of composite nanofibers for applications in lithium batteries Methods of fabricating one-dimensional composite nanofiber on a template membrane with porous array by chemical or physical process are disclosed. The whole procedures are established under a base concept of “secondary template”. First of all, tubular first nano... | 01/29/2008 |
| 7321097 | Electronic component comprising an electrically conductive connection consisting of carbon nanotubes and a method for producing the same The invention provides in a preferred embodiment an electronic component comprising a first conductive layer, a non-conductive layer and a second conductive layer. A hole is etched through the non-conductive layer. A nanotube, which is provided in said hole, links t... | 01/22/2008 |
| 7312474 | Group III nitride based superlattice structures A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride... | 12/25/2007 |
| 7309724 | Thermosetting resin compositions containing maleimide and/or vinyl compounds In accordance with the present invention, there are provided novel thermosetting resin compositions which do not require solvent to provide a system having suitable viscosity for convenient handling. Invention compositions have the benefit of undergoing rapid cure. ... | 12/18/2007 |
| 7304383 | TFT substrate for liquid crystal display apparatus and method of manufacturing the same There are provided a TFT substrate for an LCD apparatus and a method of manufacturing the same. A substrate (10), a diffusion barrier layer (11) and a copper alloy layer (12) are formed on the TFT substrate, consecutively. The copper alloy inclu... | 12/04/2007 |
| 7301232 | Integrated circuit package with carbon nanotube array heat conductor An integrated circuit package includes a die mounted on a substrate, an integrated heat spreader set above the die, and an array of carbon nanotubes mounted between the die and the integrated heat spreader. The integrated heat spreader is fixed on the substrate, and... | 11/27/2007 |
| 7291558 | Copper interconnect wiring and method of forming thereof Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods of forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion... | 11/06/2007 |
