Did You Know...
...that when IBM conducted a market study of Chester Carlson's invention in 1959, the company concluded that it would take only 5000 units of his new product to saturate the market? IBM therefore declined to be part of the new product introduction. Too bad for IBM. Carlson's invention was the xerography process, and his new product was the beginning of the Xerox Corporation. It is estimated that every day, worldwide, 3,000,000,000 copies are made!!
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8154025 | Schottky barrier CMOS device and method A CMOS device and method of fabrication are disclosed. The present invention utilizes Schottky barrier contacts for source and/or drain contact fabrication within the context of a CMOS device and CMOS integrated circuits, to eliminate the requirement for halo/pocket... | 04/10/2012 |
| 8063406 | Semiconductor device having a polysilicon layer with a non-constant doping profile Various illustrative embodiments of methods for manufacturing a semiconductor device are described. These methods may include, for example, forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a doped portion, and formin... | 11/22/2011 |
| 7999267 | Liquid crystal display device A display device includes a substrate having a display region and a driver region; a gate line and a data line crossing each other to define a pixel region in the display region, the pixel region having a pixel electrode; an insulation layer between the gate line an... | 08/16/2011 |
| 7999266 | Semiconductor device including poly-Si and method of manufacturing the same A semiconductor device including polysilicon (poly-Si) and method of manufacturing the same are provided. The semiconductor device includes a TaNx material layer and a poly-Si layer formed on the TaNx material layer. The semiconductor device in... | 08/16/2011 |
| 7989816 | Semiconductor device A semiconductor device is, constituted by: a nitride group semiconductor functional layer which includes a first nitride group semiconductor region, a second nitride group semiconductor region provided on the first nitride group semiconductor region by a hetero junc... | 08/02/2011 |
| 7411218 | Method and device with durable contact on silicon carbide A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky con... | 08/12/2008 |
| 7400030 | Schottky diode with silver layer contacting the ZnO and MgZnO films In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substr... | 07/15/2008 |
| 7391056 | Chemical sensor using chemically induced electron-hole production at a Schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 06/24/2008 |
| 7358533 | Electronic device, thin film transistor structure and flat panel display having the same The present invention provides an electronic device having more than two conductive layers that cross but not in contact with each other. At least one of the conductive layers comprises a width change part, a width of which changes in a length direction of at least ... | 04/15/2008 |
| 7348598 | Thin film transistor and liquid crystal display device using the same A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT includes a gate electrode for... | 03/25/2008 |
| 7314816 | Masking layer in substrate cavity A package that resists creation of particles in a package cavity. A package according to one embodiment of the present invention contains a mechanical device attached to the floor of the package substrate. Epoxy typically is used to attach the device. Electrical con... | 01/01/2008 |
| 7294552 | Electrical contact for a MEMS device and method of making A method for making a subsurface electrical contact on a micro-electrical-mechanical-systems (MEMS) device. The contact is formed by depositing a layer of polycrystalline silicon onto a surface within a cavity buried under a device silicon layer. The polycrystalline... | 11/13/2007 |
| 7288787 | Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistors The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a sou... | 10/30/2007 |
| 7271403 | Isolating phase change memory devices A phase change memory may be made using an isolation diode in the form of a Schottky diode between a memory cell and a word line. The use of Schottky diode isolation devices may make the memory more scaleable in some embodiments. ... | 09/18/2007 |
| 7233033 | Semiconductor device having pixels A small semiconductor display device of low power consumption and with high definition/high resolution/high image quality is provided. The semiconductor display device according to the present invention includes a pixel matrix circuit, a data line driver circuit and... | 06/19/2007 |
| 7229866 | Non-activated guard ring for semiconductor devices A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resi... | 06/12/2007 |
| 7224532 | Optical uses diamondoid-containing materials Novel optical devices based on diamondoid-containing materials are disclosed. Materials that may be fabricated from diamondoids included diamondoid nucleated CVD films, diamondoid-containing CVD films, molecular crystals, and polymerized materials. Devices that may ... | 05/29/2007 |
| 7221007 | Sheet for optical-semiconductor element encapsulation and process for producing optical semiconductor device using the sheet The invention provides a sheet for optical-semiconductor element encapsulation, which has a multilayer structure including at least two resin layers. The at least two resin layers include: (A) an outermost resin layer (layer A) that is to be brought into contact wit... | 05/22/2007 |
| 7217953 | Technique for suppression of edge current in semiconductor devices A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted regi... | 05/15/2007 |
| 7199442 | Schottky diode structure to reduce capacitance and switching losses and method of making same A SiC Schottky barrier diode (SBD) is provided having a substrate and two or more epitaxial layers, including at least a thin, lightly doped N-type top epitaxial layer, and an N-type epitaxial layer on which the topmost epitaxial layer is disposed. Multiple epitaxia... | 04/03/2007 |
| 7194245 | High-frequency signal receiving apparatus A high-frequency signal receiver includes a mixer having one port for receiving an input signal and another port for receiving an output from a local oscillator, a filter for receiving an output from the mixer, and an output terminal to which an output from the filt... | 03/20/2007 |
| 7189994 | Semiconductor device and method for manufacturing the same It is an object of the present invention to form a TFT which is required to have a high withstanding voltage characteristic as well as to lower an off-current, a TFT which is required to have a high withstanding voltage characteristic as well as to raise an on-curre... | 03/13/2007 |
| 7176489 | Thin-film transistor and method of making same A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 μm. A method of making such a thin-f... | 02/13/2007 |
| 7176494 | Thin film transistor for liquid crystal display and method of manufacturing the same Disclosed is a thin film transistor (TFT) for a liquid crystal display (LCD) and a method for manufacturing the same that allows the number of photomasks used in a photolithography process to be decreased as compared to conventional methods. A passivation film is fo... | 02/13/2007 |
| 7170142 | Planar integrated circuit including a plasmon waveguide-fed Schottky barrier detector and transistors connected therewith A planar integrated circuit includes a semiconductor substrate having a substrate surface and a trench in the substrate, a waveguide medium in the trench having a top surface and a light propagation axis, the trench having a sufficient depth for the waveguide medium... | 01/30/2007 |
| 7166861 | Thin-film transistor and method for manufacturing the same The present invention provides a thin-film transistor that is formed by using a patterning method capable of forming a semiconductor channel layer in sub-micron order and a method for manufacturing thereof that provides a thin-film transistor with a larger area, and... | 01/23/2007 |
| 7166894 | Schottky power diode with SiCOI substrate and process for making such diode The present invention relates to a power junction device including a substrate of the SiCOI type with a layer of silicon carbide (16) insulated from a solid carrier (12) by a buried layer of insulant (14), and including at least one Schottky con... | 01/23/2007 |
| 7161227 | Structure and method for fabricating semiconductor structures and devices for detecting an object High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of mono... | 01/09/2007 |
| 7148510 | Electronic apparatus having a protective circuit A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from esca... | 12/12/2006 |
| 7132656 | High speed and high efficiency Si-based photodetectors using waveguides formed with silicide for near IR applications According to this invention, silicon-based photodetectors using waveguides formed with silicide regions can have high speed and high efficiency for near IR applications. Utilizing the unique properties of silicides, the proposed method provides a simple and elegant ... | 11/07/2006 |
| 7115991 | Method for creating barriers for copper diffusion A barrier layer for a semiconductor device is provided. The semiconductor device comprises a dielectric layer, an electrically conductive copper containing layer, and a barrier layer separating the dielectric layer from the copper containing layer. The barrier layer... | 10/03/2006 |
| 7071488 | Active matrix display device and thin film transistor display device The invention provides an active matrix display device in which active elements are formed on a first substrate, wiring lines are formed on a second substrate, an element chip having at least one active element is peeled off from the first substrate and is then tran... | 07/04/2006 |
| 7067845 | Semiconductor device and method of manufacturing the same In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevent... | 06/27/2006 |
| 7057453 | Method and system for reducing parasitic feedback and parasitic resonances in high-gain transimpedance amplifiers Method and system for reducing parasitic feedback and resonances in high-gain transimpedance amplifiers. In a first embodiment of the present invention, a resistive layer is implemented in the gaps of a high-gain transimpedance amplifier's metallic planes. In a seco... | 06/06/2006 |
| 7043134 | Thermo-optic plasmon-polariton devices A waveguide structure comprises a thin strip of material having a relatively high free charge carrier density surrounded by material having a relatively low free charge carrier density. The width and thickness of the strip are dimensioned such that optical radiation... | 05/09/2006 |
| 7026701 | Schottky barrier photodetectors A Schottky barrier photodetector comprises a waveguide structure formed by a thin strip of material having a relatively high free charge carrier density, for example a conductor or certain classes of highly-doped semiconductor, surrounded by material having a relati... | 04/11/2006 |
| 6995411 | Image sensor with vertically integrated thin-film photodiode An image sensor has a vertically integrated thin-film photodiode. In one implementation, the image sensor has a substrate, an interconnection structure adjacent to the substrate, wherein the interconnection structure includes a top metal layer comprising a plurality... | 02/07/2006 |
| 6992916 | SRAM cell design with high resistor CMOS gate structure for soft error rate improvement A high resistor SRAM memory cell to reduce soft error rate includes a first inverter having an output as a first memory node, and a second inverter having an output as a second memory node. The second memory node is coupled to an input of the first inverter through ... | 01/31/2006 |
| 6955978 | Uniform contact A semiconductor device can comprise a contact material in substantially continuous contact with a contact region. In an embodiment the contact region may comprise an alloy comprising a wide band-gap material and a low melting point contact material. A wide band-gap ... | 10/18/2005 |
| 6956274 | TiW platinum interconnect and method of making the same A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack comprises a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etch... | 10/18/2005 |
