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| Number | Title | Issue Date |
| 8178882 | Buffer layer for promoting electron mobility and thin film transistor having the same A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into t... | 05/15/2012 |
| 8168979 | Crystallization method, thin film transistor manufacturing method, thin film transistor, display, and semiconductor device According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light intensity distribution having an inverse peak pattern is formed on the s... | 05/01/2012 |
| 8154023 | Low temperature polysilicon thin film transistor A low temperature polysilicon thin film transistor and method of manufacturing the same is provided. The low temperature polysilicon thin film transistor comprises a channel region. Among others, one feature of the method according to the present invention is the pe... | 04/10/2012 |
| 8143623 | Thin film transistor and manufacturing method thereof A thin film transistor and a manufacturing method thereof are provided. An insulating pattern layer having at least one protrusion is formed on a substrate. Afterwards, at least one spacer and a plurality of amorphous semiconductor patterns separated from each other... | 03/27/2012 |
| 8138501 | Switching element and manufacturing method thereof Disclosed is a switching element provided with a gate dielectric film and an active layer disposed in contact with the gate dielectric film. The active layer includes carbon nanotubes, and the gate dielectric film includes non-conjugated polymer containing an aromat... | 03/20/2012 |
| 8115206 | Semiconductor device It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semi... | 02/14/2012 |
| 8115207 | Vacuum channel transistor and diode emitting thermal cathode electrons, and method of manufacturing the vacuum channel transistor Provided are a transistor and a method of manufacturing the transistor, and more particularly, a vacuum channel transistor emitting thermal cathode electrons and a method of manufacturing the vacuum channel transistor. The vacuum channel transistor includes: a mothe... | 02/14/2012 |
| 8106398 | Microcrystalline semiconductor film, thin film transistor, and display device including thin film transistor A thin film transistor with excellent electric characteristics and a display device having the thin film transistor are proposed. The thin film transistor includes a gate insulating film formed over a gate electrode; a microcrystalline semiconductor film including a... | 01/31/2012 |
| 8101953 | Thin film transistor having a plurality of carbon nanotubes A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The g... | 01/24/2012 |
| 8097881 | Thin film transistor substrate and a fabricating method thereof An oxide semiconductor thin film transistor substrate includes a gate line and a gate electrode disposed on an insulating substrate, an oxide semiconductor pattern disposed adjacent to the gate electrode, a data line electrically insulated from the gate line, the da... | 01/17/2012 |
| 8093593 | Semiconductor device having multichannel transistor A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A con... | 01/10/2012 |
| 8089071 | Thin film semiconductor device having crystal grain boundaries cyclically traversing a channel part and method for manufacturing same A thin film semiconductor device is provided. The semiconductor device includes a semiconductor thin film configured to have an active region turned into a polycrystalline region through irradiation with an energy beam, and a gate electrode configured to be provided... | 01/03/2012 |
| 8071983 | Semiconductor device structures and methods of forming semiconductor structures A method of patterning a semiconductor film is described. According to an embodiment of the present invention, a hard mask material is formed on a silicon film having a global crystal orientation wherein the semiconductor film has a first crystal plane and second cr... | 12/06/2011 |
| 8063403 | Thin film transistor and semiconductor device An impurity element imparting one conductivity type is included in a layer close to a gate insulating film of layers with high crystallinity, so that a channel formation region is formed not in a layer with low crystallinity which is formed at the beginning of film ... | 11/22/2011 |
| 8058652 | Semiconductor device used as electro-optical device having channel formation region containing first element, and source or drain region containing second element A semiconductor device having an island semiconductor film which is a channel formation region and a semiconductor film which is a source or drain region being in contact with a side face of the island semiconductor film, and a method for manufacturing the semicondu... | 11/15/2011 |
| 8053777 | Thin film transistors for imaging system and method of making the same A detector including an electrode formed from a first layer of conductive material, a readout line formed from a second layer of conductive material, and a via electrically connecting the readout line and the electrode. In one embodiment, the detector includes a sou... | 11/08/2011 |
| 8053778 | Semiconductor device and a method for manufacturing the same A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film ... | 11/08/2011 |
| 8049219 | Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same An integrated circuit mounting a DRAM which can realize high integration without complicated manufacturing steps. The integrated circuit according to the invention comprises a DRAM in which a plurality of memory cells each having a thin film transistor are disposed.... | 11/01/2011 |
| 8044401 | Thin film transistor, method of fabricating the same, organic light emitting diode display device including the same and method of fabricating the same A thin film transistor includes a substrate, a semiconductor layer disposed on the substrate, including a channel region and source and drain regions and crystallized using a metal catalyst, a gate electrode disposed to correspond to a predetermined region of the se... | 10/25/2011 |
| 8044402 | Amorphous insulator film and thin-film transistor An amorphous insulator film is provided which is composed of silicon (Si) oxide, in which the amorphous insulator film includes Ar and an amount of Ar included therein is equal to or larger than 3 at. % in terms of atomic ratio with respect to Si. ... | 10/25/2011 |
| 8039844 | Microcrystalline silicon thin film transistor and method for manufacturing the same This invention provides a top-gate microcrystalline thin film transistor and a method for manufacturing the same. An inversion layer channel is formed in a top interface of a microcrystalline active layer, and being separated from an incubation layer in a bottom int... | 10/18/2011 |
| 8030654 | Thin film transistor and method of manufacturing the same A thin film transistor comprising a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes is provided. The gate electrode overlaps with a channel region of the active layer, the gate insulating layer is provided between the gate e... | 10/04/2011 |
| 8026520 | Thin film transistor, method of fabricating the same, and organic light emitting diode display device having the thin film transistor A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT includes a substrate, a protection layer disposed on the substrate, a buffer layer disposed on the protection layer, a s... | 09/27/2011 |
| 8008664 | Component comprising a thin-film transistor and CMOS-transistors and methods for production An electrical component, in the crystalline semiconductor body of which several CMOS transistors in high-voltage or low-voltage technology are formed. The individual CMOS transistors are separated from one another by insulation regions. On one insulation region, a t... | 08/30/2011 |
| 7999261 | Thin film transistor, method of fabricating the same, and organic light emitting diode display device having the TFT A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT including a substrate, a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrod... | 08/16/2011 |
| 7999262 | Thin film transistor, method of fabricating the same, and method of fabricating liquid crystal display device having the same A thin film transistor includes a gate electrode, a gate insulation layer on the gate electrode, source and drain electrodes formed on the gate insulation layer, a polysilicon channel layer overlapping the ohmic contact layers and on the gate insulation layer betwee... | 08/16/2011 |
| 7994509 | Structure and method for thin film device with stranded conductor Provided is a thin film device and an associated method of making a thin film device. For example, fabrication of an inverter thin film device is described. Moreover, a parallel spaced electrically conductive strips are provided upon a substrate. A functional materi... | 08/09/2011 |
| 7989810 | Semiconductor device, electrooptical apparatus, and electronic system A semiconductor device on a flexible substrate includes a semiconductor layer constituting a plurality of bottom-gate thin-film transistors, first wiring lines, second wiring lines, a first insulating layer, and a gate insulating film. The first insulating layer and... | 08/02/2011 |
| 7973313 | Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container The present invention provides an ultrathin thin film integrated circuit and a thin film integrated circuit device including the thin film integrated circuit device. Accordingly, the design of a product is not spoilt while an integrated circuit formed from a silicon... | 07/05/2011 |
| 7968885 | Display device and manufacturing method thereof To provide a display device having a thin film transistor with high electric characteristics and excellent reliability and a manufacturing method thereof. A gate electrode, a gate insulating film provided over the gate electrode, a first semiconductor layer provided... | 06/28/2011 |
| 7968884 | Semiconductor device and manufacturing method thereof A semiconductor device manufactured utilizing an SOI substrate, in which defects due to an end portion of an island-shaped silicon layer are prevented and the reliability is improved, and a manufacturing method thereof. The following are included: an SOI substrate i... | 06/28/2011 |
| 7968886 | Semiconductor integrated circuit and method of fabricating same A semiconductor integrated circuit comprising thin-film transistors in each of which the second wiring is prevented from breaking at steps. A silicon nitride film is formed on gate electrodes and on gate wiring extending from the gate electrodes. Substantially trian... | 06/28/2011 |
| 7960734 | FinFET field effect transistor insulated from the substrate A finFET field effect transistor is produced by the formation of an electrical junction between the thin fin portion of semiconductor material which forms the channel of the transistor and the circuit substrate. Doping particles are implanted in the substrate throug... | 06/14/2011 |
| 7956361 | Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation,... | 06/07/2011 |
| 7943935 | Semiconductor device, method for manufacturing semiconductor device, and electro-optical apparatus A semiconductor device includes a thin-film transistor including a polycrystalline silicon layer, disposed above a substrates serving as an active layer. The thin-film transistor includes a first thin-film transistor section including a first channel region disposed... | 05/17/2011 |
| 7943936 | Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross... | 05/17/2011 |
| 7939826 | Thin film semiconductor device A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow... | 05/10/2011 |
| 7935968 | Semiconductor device A semiconductor device having a display unit, which is small in size, suppresses the defect caused by the mounting of IC chips and the like on the substrate, and operates at a high speed. A semiconductor display unit and other circuit blocks are integrally formed on... | 05/03/2011 |
| 7923730 | Thin film transistor and semiconductor device An impurity element imparting one conductivity type is included in a layer close to a gate insulating film of layers with high crystallinity, so that a channel formation region is formed not in a layer with low crystallinity which is formed at the beginning of film ... | 04/12/2011 |
| 7923731 | Thin film transistor A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The g... | 04/12/2011 |
