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| Number | Title | Issue Date |
| 8138583 | Diode having reduced on-resistance and associated method of manufacture A diode structure having a reduced on-resistance in the forward-biased condition includes semiconductor layers, preferably of silicon carbide. The anode and cathode of the device are located on the same side of the bottom semiconductor layer, providing lateral condu... | 03/20/2012 |
| 7868428 | PIN diode with improved power limiting A PIN diode comprising an N-type substrate comprising a cathode of the PIN diode and having an intrinsic layer disposed upon the N-type substrate and having a top surface a P-type material disposed upon the top surface of the intrinsic layer comprising an anode of t... | 01/11/2011 |
| 7800204 | Semiconductor device and method of fabricating the same A semiconductor device includes a stepwise impurity layer provided at one of an anode portion and an cathode portion of the semiconductor device by introducing an impurity of a predetermined conduction type from a major surface of the semiconductor substrate through... | 09/21/2010 |
| 7795707 | High voltage switching devices and process for forming same The present invention relates to various switching device structures including Schottky diode (10), P—N diode, and P—I—N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN laye... | 09/14/2010 |
| 7781869 | Semiconductor device having rectifying action A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer connected to the first main surface, control regions arranged inside groove... | 08/24/2010 |
| 7755173 | Series-shunt switch with thermal terminal A series-shunt switch is provided. The switch includes a PIN diode having an input electrical terminal, an output electrical terminal and a thermal terminal. The thermal terminal is configured to provide continuity of diode thermal ground with respect to a circuit t... | 07/13/2010 |
| 7750442 | High-frequency switch A high-frequency switch includes a semiconductor body made of a semiconductor material having a first surface and a second surface, and two direct current terminals and two high-frequency terminals. ... | 07/06/2010 |
| 7737534 | Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is dispose... | 06/15/2010 |
| 7728409 | Semiconductor device and method of manufacturing the same A semiconductor device formed by decreasing thickness of a substrate by grinding, and performing ion implantation. In a diode in which a P anode layer and an anode electrode are formed at a side of a right face of an N− drift layer, and an N+... | 06/01/2010 |
| 7719091 | Diode with improved switching speed A diode having a first semiconductor region of a first polarity and a second semiconductor region of an opposite polarity at least partially surrounding the first semiconductor region. A metal contact coupled to the second semiconductor region at least partially sur... | 05/18/2010 |
| 7485950 | Impact ionization amplification apparatus method and system An input signal comprising electronic carriers is injected into an impact ionization device with a high electric field whereupon the electronic carriers are accelerated toward an electron collector or hole sink and subsequently ionize additional electrons and holes ... | 02/03/2009 |
| 7473986 | Positive-intrinsic-negative (PIN) diode semiconductor devices and fabrication methods thereof Semiconductor devices and fabrication methods thereof. A first dielectric layer with a first conductor line along a first direction is disposed on a semiconductor substrate, wherein the top surface of the first conductor line is lower than the top surface of the fir... | 01/06/2009 |
| 7439597 | Poly diode structure for photo diode An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon ... | 10/21/2008 |
| 7427813 | Structure, material, and design for assembling a low-K Si die to achieve an industrial grade reliability wire bonding package Provided are semiconductor low-K Si die wire bonding packages with package stress control and fabrication methods for such packages. The packages include molding interface material applied onto the low-K Si die. In general, the molding interface material is selectiv... | 09/23/2008 |
| 7405465 | Deposited semiconductor structure to minimize n-type dopant diffusion and method of making In deposited silicon, n-type dopants such as phosphorus and arsenic tend to seek the surface of the silicon, rising as the layer is deposited. When a second undoped or p-doped silicon layer is deposited on n-doped silicon with no n-type dopant provided, a first thic... | 07/29/2008 |
| 7397101 | Germanium silicon heterostructure photodetectors A horizontal germanium silicon heterostructure photodetector comprising a horizontal germanium p-i-n diode disposed over a horizontal parasitic silicon p-i-n diode uses silicon contacts for electrically coupling to the germanium p-i-n through the p-type doped and n-... | 07/08/2008 |
| 7372124 | Light-receiving element and photodetector using the same A light-receiving element may easily detect the barycenter of a light intensity of light having a long-wavelength band in an optical communication. An InGaAs layer (i-type layer) and a p-type InP layer are stacked on an n-type InP substrate. Electrodes are formed on... | 05/13/2008 |
| 7361943 | Silicon-based backward diodes for zero-biased square law detection and detector arrays of same A Si-based diode (10, 10′, 100) is formed by epitaxially depositing a Si-based diode structure on a silicon substrate. The Si-based diode structure includes a Si-based pn junction (16, 16′, 18, 18′, 30, 32, 160, 161) having a backward diode curre... | 04/22/2008 |
| 7361930 | Method for forming a multiple layer passivation film and a device incorporating the same A method of forming a multiple layer passivation film on a semiconductor device surface comprises placing a semiconductor device in a chemical vapor deposition reactor, introducing a nitrogen source into the reactor, introducing a carbon source into the reactor, dep... | 04/22/2008 |
| 7361406 | Ultra-high current density thin-film Si diode A combination of a thin-film μc-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of μc-Si deposited the b... | 04/22/2008 |
| 7358127 | Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof Impurity concentration (Nd(X)) in an n-drift layer in a diode is at a maximum at a position at a distance Xp from an anode electrode in a direction from the anode electrode to a cathode electrode, and gradually decreases from the position toward each of t... | 04/15/2008 |
| 7352047 | Systems and methods for integration of heterogeneous circuit devices A heterogeneous device comprises a substrate and a plurality of heterogeneous circuit devices defined in the substrate. In embodiments, a plurality of heterogeneous circuit devices are integrated by successively masking and ion implanting the substrate. The heteroge... | 04/01/2008 |
| 7332750 | Power semiconductor device with improved unclamped inductive switching capability and process for forming same A power semiconductor device having high avalanche capability comprises an N+ doped substrate and, in sequence, N− doped, P− doped, and P+ doped semiconductor layers, the P− and P+ doped layers ... | 02/19/2008 |
| 7326995 | Trench MIS device having implanted drain-drift region and thick bottom oxide A trench MIS device is formed in a P-epitaxial layer that overlies an N+ substrate. In one embodiment, the device includes a thick oxide layer at the bottom of the trench and an N-type drain-drift region that extends from the bottom of the trench to the substrate. T... | 02/05/2008 |
| 7317242 | Semiconductor device including p-type silicon layer including implanted germanium The invention provides a semiconductor device having a pn diode that includes a p-type SiGe layer and a n-type Si layer junctioned to the p-type SiGe layer. A built-in potential of the pn diode can be reduced, and thus obtaining a diode characteristics with lower im... | 01/08/2008 |
| 7301178 | Pressed-contact type semiconductor device A P++-type first diffusion layer is formed by diffusing P-type impurities on a front side of an N−-type semiconductor substrate, and an N-type fourth diffusion layer which is shallower than the first diffusion layer is formed by diffusing N-t... | 11/27/2007 |
| 7291884 | Trench MIS device having implanted drain-drift region and thick bottom oxide A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes a thick oxide layer at the bottom of the trench and an N-type drain-drift region that extends from the bottom of the t... | 11/06/2007 |
| 7262467 | Over charge protection device An over-voltage protection device includes a substrate including an upper surface and a lower surface; a first electrode provided on the upper surface of the substrate; a second electrode provided on the lower surface on the substrate; a first conductive layer overl... | 08/28/2007 |
| 7259444 | Optoelectronic device with patterned ion implant subcollector In one embodiment, an optoelectronic device is provided having a pin photo diode including a semi-insulating substrate or layer, with a patterned implant region of a first dopant type. The pin photo diode includes an upper layer having semiconductor material with a ... | 08/21/2007 |
| 7238976 | Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 07/03/2007 |
| 7220661 | Method of manufacturing a Schottky barrier rectifier A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 05/22/2007 |
| 7211961 | Thin film transistor circuit and display utilizing the same There is provided a method of easily forming thin film transistors having the same characteristics in fabricating a differential circuit or a current mirror circuit utilizing two thin film transistors made of a polycrystalline silicon semiconductor. Four each thin f... | 05/01/2007 |
| 7205641 | Polydiode structure for photo diode An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon ... | 04/17/2007 |
| 7202102 | Doped absorption for enhanced responsivity for high speed photodiodes A photodiode with a semiconductor intrinsic light absorption layer has at least one p-doped light absorption layer or an n-doped light absorption layer, and preferably both. The diode also has a cathode electrode and an anode electrode electrically coupled with the ... | 04/10/2007 |
| 7186611 | High-density germanium-on-insulator photodiode array A high-density Germanium (Ge)-on-Insulator (GOI) photodiode array and corresponding fabrication method are provided. The method includes: forming an array of pixel driver nMOST devices, each device having a gate connected to a row line in a first orientation, a firs... | 03/06/2007 |
| 7176546 | Diode circuit and method of producing a diode circuit A diode circuit includes a pin diode structure, wherein the n-semiconductor layer is a buried layer, on which the i-area is deposited by an epitaxy method, and wherein a p-semiconductor layer is introduced into the epitaxy layer. A contacting of the p-semiconductor ... | 02/13/2007 |
| 7169634 | Design and fabrication of rugged FRED An improved Fast Recovery Diode comprises a main PN junction defining a central conduction region for conducting high current in a forward direction and a peripheral field spreading region surrounding the central conduction region for blocking high voltage in the re... | 01/30/2007 |
| 7164568 | Bi-directional pin or nip low capacitance transient voltage suppressors and steering diodes A bi-directional low capacitance TVS using a PIN or NIP diode is disclosed. Bi-directional low capacitance TVS protection circuit (1000) consists of two pairs of TVS diodes (1001), (1003) and LC PIN or NIP diodes (1002), (1004). Di... | 01/16/2007 |
| 7138697 | Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector The invention addresses the problem of creating a high-speed, high-efficiency photodetector that is compatible with Si CMOS technology. The structure consists of a Ge absorbing layer on a thin SOI substrate, and utilizes isolation regions, alternating n- and p-type ... | 11/21/2006 |
| 7112867 | Resistive isolation between a body and a body contact A high resistance region may be used to isolate the body of a first transistor from a body contact. ... | 09/26/2006 |
