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| Number | Title | Issue Date |
| 8097932 | Ultra low κ plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH | 01/17/2012 |
| 7405466 | Method of fabricating microelectromechanical system structures A method of simultaneously bonding components, comprising the following steps. At least first, second and third components are provided and comprise: at least one glass component; and at least one conductive or semiconductive material component. The order of stackin... | 07/29/2008 |
| 7294909 | Electronic package repair process A multilayer ceramic repair process which provides a new electrical repair path to connect top surface vias. The repair path is established between a defective net and a redundant repair net contained within the multilayer ceramic substrate. The defective net and th... | 11/13/2007 |
| 7250670 | Semiconductor structure and fabricating method thereof A semiconductor structure is provided. The semiconductor structure is disposed on the scribe line of a wafer and is around the chip area of the wafer. The semiconductor structure includes a plurality of dielectric layers sequentially disposed on the scribe line and ... | 07/31/2007 |
| 7211923 | Rotational motion based, electrostatic power source and methods thereof A power system includes a member with two or more sections and at least one pair of electrodes. Each of the two or more sections has a stored static charge. Each of the pair of electrodes is spaced from and on substantially opposing sides of the member from the othe... | 05/01/2007 |
| 7208836 | Integrated circuitry and a semiconductor processing method of forming a series of conductive lines A semiconductor processing method of forming a plurality of conductive lines includes, a) providing a substrate; b) providing a first conductive material layer over the substrate; c) providing a first insulating material layer over the first conductive layer; d) etc... | 04/24/2007 |
| 7205224 | Very low dielectric constant plasma-enhanced CVD films The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liab... | 04/17/2007 |
| 7180129 | Semiconductor device including insulating layer A method of manufacturing an insulating layer that ensures reproducibility across like manufacturing apparatus. The insulating layer is formed on the substrate by (a) flowing an oxidizing gas at an oxidizing gas flow rate, (b) flowing a first carrier gas at a first ... | 02/20/2007 |
| 7164191 | Low relative permittivity SiOfilm including a porous material for use with a semiconductor device A low relative permittivity SiOx film excellent in heat resistance without using an alkali metal, fluorine, etc., a method for modifying an SiOx film to accomplish a further reduction of the relative permittivity of the low relative permittivit... | 01/16/2007 |
| 7129588 | Portable telephone A portable telephone including an integrated circuit chip module with a first integrated circuit chip including a first power source pad for a first power voltage and an adjacent second power source pad for a second power voltage, the first power voltage being highe... | 10/31/2006 |
| 7115182 | Anodic bonding process for ceramics A method of bonding components comprising the following steps. At least a first ceramic component and a second ceramic component are provided. A first conductive layer is formed over the upper surface of the first ceramic component. An intermediate film is formed ov... | 10/03/2006 |
| 7102242 | Lead-free glass tubing, especially for encapsulating diodes and diodes encapsulated with same The lead-free glass tubing of the SiO2—B2O3—R2O—BaO—ZnO—TiO2 system has a composition, in percent by weight on an oxide basis, consisting essentially of: SiO2, 34 to 52; B2O3... | 09/05/2006 |
| 7075187 | Coating material over electrodes to support organic synthesis There is disclosed a coating material formulation for layering a plurality of electrodes to provide a substrate for the electrochemical synthesis of organic oligomers. Specifically, there is disclosed a coating layer of from about 0.5 to about 100 microns thick and ... | 07/11/2006 |
| 7060330 | Method for forming ultra low k films using electron beam The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compound... | 06/13/2006 |
| 7005724 | Semiconductor device and a method of manufacture therefor The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the aforementioned semiconductor device. The semiconductor device, in accordance with the principles of the present invention, may include a ... | 02/28/2006 |
| 6979887 | Support matrix with bonding channel for integrated semiconductors, and method for producing it Support matrices for semiconductors are often encapsulated in a region of the bonding leads, the so-called bonding channel. The encapsulation is effected using a dispensable material that can flow onto the support matrix and causes contamination there. In order to p... | 12/27/2005 |
| 6978434 | Method of designing wiring structure of semiconductor device and wiring structure designed accordingly A wiring structure of a semiconductor device, includes a wiring layer formed on an insulating film, a width (W) of each wire in the wiring layer and a thickness (H) of the insulating film satisfying “W/H | 12/20/2005 |
| 6960487 | Method for manufacturing a dynamic quantity detection device A method for manufacturing a dynamic quantity detection device includes bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer. Initially, a semiconductor chip is formed that includes a detect... | 11/01/2005 |
| 6943429 | Wafer having alignment marks extending from a first to a second surface of the wafer A marked wafer includes a front-side surface and a back-side surface. A vertical scribe line and a horizontal scribe line are on the front-side surface of the wafer. A back-side alignment mark is located at an intersection of the vertical scribe line and the horizon... | 09/13/2005 |
| 6917110 | Semiconductor device comprising an interconnect structure with a modified low dielectric insulation layer A semiconductor device capable of inhibiting a conductive plug from increase of resistance or disconnection resulting from moisture discharged from a first insulator film while reducing the capacitance between adjacent first interconnection layers is obtained. This ... | 07/12/2005 |
| 6890786 | Wafer scale processing This invention relates to a method of fabricating a light modulation system having a semiconductor substrate. In one exemplary method, an optical layer is applied over a semiconductor substrate which includes a plurality of integrated circuits. Each of these integra... | 05/10/2005 |
| 6888224 | Methods and systems for fabricating electrical connections to semiconductor structures incorporating low-k dielectric materials Low-k dielectric materials have desirable insulating characteristics for use in insulating sub micron conductors in semiconductor devices. However, certain physical and material characteristics of the low-k dielectric materials make them difficult to work with. More... | 05/03/2005 |
| 6864561 | Method and apparatus for reducing fixed charge in semiconductor device layers The fixed charge in a borophosphosilicate glass insulating film deposited on a semiconductor device is reduced by reacting an organic precursor such as TEOS with O3. When done at temperatures higher than approximately 480 degrees C., the carbon level in t... | 03/08/2005 |
| 6844258 | Selective refractory metal and nitride capping A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of... | 01/18/2005 |
| 6844612 | Low dielectric constant fluorine-doped silica glass film for use in integrated circuit chips and method of forming the same A fluorine-doped silica glass (FSG) dielectric layer includes a number of sublayers. Each sublayer is doped with fluorine in such a way that the doping concentration of fluorine in the sublayer decreases as one moves from an interior region of the sublayer towards o... | 01/18/2005 |
| 6841830 | Metal oxide semiconductor field effect transistors (MOSFETS) used in ink-jet head chips and method for making the same A MOSFET and the method for fabricating them are disclosed to make the inkjet head chips. The MOSFET has the scaled-down junction formation for the source and drain. Using a lower temperature process and interlayer dielectric, the source and drain dopants can not be... | 01/11/2005 |
| 6809344 | Optical semiconductor device and method of fabricating the same An optical semiconductor device includes a laminated layer structure, an intermediate film formed on an end surface of the laminated layer structure, and a passivation film formed on the intermediate film. The passivation film has a quantity of ion projection than t... | 10/26/2004 |
| 6809339 | Semiconductor device and method for manufacturing same In the fabrication of semiconductor devices such as active matrix displays, the need to pattern resist masks in photolithography increases the number of steps in the fabrication process and the time required to complete them and consequently represents a substantial... | 10/26/2004 |
| 6800928 | Porous integrated circuit dielectric with decreased surface porosity A surface treatment for porous silica to enhance adhesion of overlying layers. Treatments include surface group substitution, pore collapse, and gap filling layer (520) which invades open surface pores (514) of xerogel (510). ... | 10/05/2004 |
| 6791164 | Stereolithographic methods for fabricating hermetic semiconductor device packages and semiconductor devices including stereolithographically fabricated hermetic packages A stereolithographically fabricated package that surrounds at least a portion of a semiconductor die so as to substantially hermetically seal the same. The package may be fabricated from thermoplastic glass, other types of glass, ceramics, or metals. Stereolithograp... | 09/14/2004 |
| 6787886 | Semiconductor device and methods of fabricating the same A semiconductor device includes a semiconductor substrate which has a major surface and a MOS transistor which has a gate and first and second diffusion regions and which is formed on the major surface. The semiconductor device also includes a laminated structure of... | 09/07/2004 |
| 6774461 | Method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structure The present invention provides a technique to reduce a stress of thick spin-on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is form... | 08/10/2004 |
| 6765283 | Semiconductor device with multi-layer interlayer dielectric film A semiconductor device comprising: an underlayer interconnect layer; an interlayer dielectric film formed with a connection hole reaching the underlayer interconnect layer; and an upper interconnect layer buried in the connection hole, wherein the interlayer dielect... | 07/20/2004 |
| 6730619 | Method of manufacturing insulating layer and semiconductor device including insulating layer A method of manufacturing an insulating layer that ensures reproducibility across like manufacturing apparatus. The insulating layer is formed on the substrate by (a) flowing an oxidizing gas at an oxidizing gas flow rate, (b) flowing a first carrier gas at a first ... | 05/04/2004 |
| 6707134 | Semiconductor structure having an improved pre-metal dielectric stack and method for forming the same A semiconductor structure includes a substrate, a dielectric layer disposed on the substrate, a layer of undoped silicate glass disposed on the dielectric layer, a layer of borophosphorous silicate glass on the layer of undoped silicate glass, and a planar dielectri... | 03/16/2004 |
| 6696745 | Methods for use in forming a capacitor and structures resulting from same A method for use with the formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a... | 02/24/2004 |
| 6690084 | Semiconductor device including insulation film and fabrication method thereof A semiconductor device including an insulation film superior in insulation characteristic is obtained. Boron ions are introduced by ion implantation into an organic SOG film with a silicon nitride film formed on the organic SOG film. By this boron implant... | 02/10/2004 |
| 6667540 | Method and apparatus for reducing fixed charge in semiconductor device layers The fixed charge in a borophosphosilicate glass insulating film deposited on a semiconductor device is reduced by reacting an organic precursor such as TEOS with O3. When done at temperatures higher than approximately 480 degrees C., the carbon... | 12/23/2003 |
| 6620534 | Film having enhanced reflow characteristics at low thermal budget A method of forming a film having enhanced reflow characteristics at low thermal budget is disclosed, in which a surface layer of material is formed above a base layer of material, the surface layer having a lower melting point than the base layer. In thi... | 09/16/2003 |
| 6597042 | Contact with germanium layer A contact to a semiconductor substrate including a contact opening extending through an insulating layer to a doped active region of the semiconductor substrate. The contact opening can have a relatively high aspect ratio of 2:1 or greater. The contact fu... | 07/22/2003 |
