Class 257/65 - Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., Ge x Si 1- x, polycrystalline silicon with dangling bond modifier)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the non-single crystal semiconductor
No. of patents: 301
Last issue date: 04/10/2012

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Number	Title	Issue Date
8154022	Process for fabricating a structure for epitaxy without an exclusion zone A process for fabricating a composite structure for epitaxy, including at least one crystalline growth seed layer of semiconductor material on a support substrate, with the support substrate and the crystalline growth seed layer each having, on the periphery of thei...	04/10/2012
7928442	Optical device having strained buried channel Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the ...	04/19/2011
7928443	Method and structure for forming strained SI for CMOS devices A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion of the at least one gap. The s...	04/19/2011
7910929	Semiconductor device An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabil...	03/22/2011
7816686	Forming silicides with reduced tailing on silicon germanium and silicon A semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; an epitaxial region having at least a portion in the semiconductor substrate and adjacent to the gate stack, wherein the epitaxial region comprises an impurity...	10/19/2010
7700951	Method and structure for forming strained Si for CMOS devices A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion of the at least one gap. The s...	04/20/2010
7652288	Epitaxial and polycrystalline growth of SiGECand SiCalloy layers on Si by UHV-CVD A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique ...	01/26/2010
7579622	Fabrication of MEMS devices with spin-on glass A method of making an etched structure in the fabrication of a MEMS device involves depositing a bulk layer, typically of polysilicon, prone to surface roughness. At least one layer of photo-insensitive spin-on planarizing material, such as silicate-based spin-on gl...	08/25/2009
7557375	Method for fabricating crystalline silicon The present invention provides methods of manufacturing of silicon in substantially crystalline form out of amorphous silicon. ...	07/07/2009
7442959	Semiconductor device having identification number, manufacturing method thereof and electronic device An electronic device includes a semiconductor chip storing an identification number of N-bits and an antenna coupled to the semiconductor chip that sends out the identification number of N-bits. In order to provide a secure and efficient data storage arrangement, th...	10/28/2008
7429752	Method and structure for forming strained SI for CMOS devices A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion of the at least one gap. The s...	09/30/2008
7427773	Layer transfer of low defect SiGe using an etch-back process A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1−yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Pol...	09/23/2008
7427779	Microstructure for formation of a silicon and germanium on insulator substrate of Si1-XGeX type The microstructure is designed for formation of a silicon and germanium on insulator substrate of Si1-XfGeXf type, with Xf comprised between a first value that is not zero and 1. The microstructure is formed by stacking of a silicon on insulato...	09/23/2008
7427775	Fabricating strained channel epitaxial source/drain transistors The mobility of carriers may be increased in strained channel epitaxial source/drain transistors. Doped silicon material may be blanket deposited after removing ion implanted source/drain regions. The blanket deposition forms amorphous films over non-source/drain ar...	09/23/2008
7417250	Strained-silicon device with different silicon thicknesses A method of manufacturing a semiconductor device includes providing a strained-silicon semiconductor layer over a silicon germanium layer, and partially removing a first portion of the strained-silicon layer. The strained-silicon layer includes the first portion and...	08/26/2008
7411214	High performance FET devices and methods thereof Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a l...	08/12/2008
7407421	Light source, optical pickup, and electronic apparatus A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodate...	08/05/2008
7385222	Thin film transistors and semiconductor constructions A method of forming a thin film transistor relative to a substrate includes, a) providing a thin film transistor layer of polycrystalline material on a substrate, the polycrystalline material comprising grain boundaries; b) providing a fluorine containing layer adja...	06/10/2008
7365362	Semiconductor device and method of fabricating semiconductor device using oxidation According to one aspect of the invention, there is provided a semiconductor device fabrication method comprising: forming a gate insulating film on a semiconductor substrate; forming a film containing a predetermin...	04/29/2008
7365410	Semiconductor structure having a metallic buffer layer and method for forming A method for forming a semiconductor structure including providing a semiconductor substrate, forming a metallic buffer layer over the semiconductor substrate, forming an amorphous semiconductor layer over the metallic buffer layer, and recrystallizing the amorphous...	04/29/2008
7361592	Method for producing a component comprising at least one germanium-based element and component obtained by such a method The method successively comprises production, on a substrate, of a stack of layers comprising at least one first layer made from germanium and silicon compound initially having a germanium concentration comprised between 10% and 50%. The first layer is arranged betw...	04/22/2008
7361578	Method to form large grain size polysilicon films by nuclei-induced solid phase crystallization A method to enhance grain size in polysilicon films while avoiding formation of hemispherical grains (HSG) is disclosed. The method begins by depositing a first amorphous silicon film, then depositing silicon nuclei, which will act as nucleation sites, on the amorph...	04/22/2008
7359010	Method for producing display device In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surfac...	04/15/2008
7348225	Structure and method of fabricating FINFET with buried channel A method of manufacturing a fin structure comprises forming a first structure of a first material type on a wafer and forming a buried channel of a second material adjacent sidewalls of the first structure. The second material type is different than the first materi...	03/25/2008
7348971	Active matrix panel In an active matrix panel, a pixel matrix which includes a plurality of gate lines, a plurality of source lines, and thin film transistors is formed on a first transparent substrate. A second transparent substrate is formed opposite to the first transparent substrat...	03/25/2008
7348227	Semiconductor device and manufacturing method thereof A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a ...	03/25/2008
7341929	Method to fabricate patterned strain-relaxed SiGe epitaxial with threading dislocation density control A method to fabricate patterned strain-relaxed SiGe epitaxial with threading dislocation density control is provided. An ion-implanting area is first defined on a silicon substrate, and then proceeds ion-implanting. Finally, a buffer layer and a SiGe epitaxial layer...	03/11/2008
7341923	Substrate, manufacturing method therefor, and semiconductor device A step of forming the first substrate which has a separation layer and a Ge layer on the separation layer, and a step of forming a bonded substrate stack by bonding the first substrate to the second substrate through an insulating layer, and a step of dividing the b...	03/11/2008
7335950	Semiconductor device and method of making thereof To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transistors is corrected, a region	02/26/2008
7319935	System and method for analyzing electrical failure data A system and method to perform analysis on test results of multiple integrated circuits. Based on the analysis, the system and method display a wafer map having map indicators representing statistical values of the test results. ...	01/15/2008
7316934	Personalized hardware A system for personalizing one or more electrical circuits having plurality of layers with electrical characteristics. The layers being produced by an electrical characteristic determination process (ECDP). The system for personalizing includes a wafer stage for rec...	01/08/2008
7317207	Semiconductor device, method of making the same and liquid crystal display device To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A T...	01/08/2008
7317641	Volatile memory cell two-pass writing method A method is set forth for writing volatile memory cells embodied on an integrated circuit and taking the form of an array of volatile memory cells including a plurality of word lines and a plurality of bit lines. In use, a first write operation is performed on at le...	01/08/2008
7315065	Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates A method for fabricating germanium-on-insulator (GOI) substrate materials, the GOI substrate materials produced by the method and various structures that can include at least the GOI substrate materials of the present invention are provided. The GOI substrate materi...	01/01/2008
7307282	Thin film transistors and semiconductor device The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller than 0.1 atomic % but not lar...	12/11/2007
7304328	Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion A method of forming a relaxed SiGe-on-insulator substrate having enhanced relaxation, significantly lower defect density and improved surface quality is provided. The method includes forming a SiGe alloy layer on a surface of a first single crystal Si layer. The fir...	12/04/2007
7297978	Semiconductor thin film and semiconductor device After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} o...	11/20/2007
7288819	Stable PD-SOI devices and methods One aspect of the present subject matter relates to a partially depleted silicon-on-insulator structure. The structure includes a well region formed above an oxide insulation layer. In various embodiments, the well region is a multilayer epitaxy that includes a sili...	10/30/2007
7282398	Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconduct...	10/16/2007
7279711	Ferroelectric liquid crystal and goggle type display devices The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second electrode ...	10/09/2007

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Class 257/65 - Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., Ge x Si 1- x, polycrystalline silicon with dangling bond modifier)