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| Number | Title | Issue Date |
| 8188577 | Production method of semiconductor device, semiconductor device, and exposure apparatus The present invention provides a production method of a semiconductor device, involving formation of a flattening layer and easy process for layers formed on a semiconductor layer, and also provides a semiconductor device preferably produced by such a production met... | 05/29/2012 |
| 8143706 | Method of forming a component having dielectric sub-layers Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described. ... | 03/27/2012 |
| 8138580 | Adhesive composition for electronic components, and adhesive sheet for electronic components using the same In order to provide an adhesive composition for electronic components that is excellent in adhesion durability under long-term high temperature conditions, thermal cyclability, and insulation reliability, designed is an adhesive composition for electronic components... | 03/20/2012 |
| 8058711 | Filler for filling a gap and method for manufacturing semiconductor capacitor using the same A filler for filling a gap includes a hydrogenated polysiloxazane having an oxygen content of about 0.2 to about 3 wt %. A chemical structure of the hydrogenated polysiloxazane includes first, second, and third moieties represented by the following respective Chemic... | 11/15/2011 |
| 7977771 | Semiconductor device and method of manufacturing semiconductor device The semiconductor device according to the present invention includes: a semiconductor chip including a wire and a passivation film formed on the outermost surface with an opening partially exposing the wire; a resin layer stacked on the semiconductor chip and provid... | 07/12/2011 |
| RE42514 | Extreme low-K dielectric film scheme for advanced interconnects An extreme low-k (ELK) dielectric film scheme for advanced interconnects includes an upper ELK dielectric layer and a lower ELK dielectric with different refractive indexes. The refractive index of the upper ELK dielectric layer is greater than the refractive index ... | 07/05/2011 |
| 7932585 | Electrical component and film composite laminated on the component and method for production At least one film composite is laminated on a surface of at least one electrical component. The film composite includes at least one electrically-conducting plastic film with at least one electrically conducting conductor. The electrically-conducting plastic film ha... | 04/26/2011 |
| 7923820 | Method of producing a porous dielectric element and corresponding dielectric element A porous dielectric element is produced by forming a first dielectric and a second dielectric. The second dielectric is dispersed in the first dielectric. The second dielectric is then removed from the second dielectric by using a chemical dissolution. The removal o... | 04/12/2011 |
| 7902641 | Semiconductor device and manufacturing method therefor The present invention relates to a semiconductor device. The semiconductor device includes a fluorocarbon film formed on a substrate and a film containing metal formed on the fluorocarbon film, wherein the content amount of fluorine atom on the fluorocarbon film, wh... | 03/08/2011 |
| 7872333 | Layer system comprising a silicon layer and a passivation layer, method for production a passivation layer on a silicon layer and the use of said system and method A layer system is described including a silicon layer and a passivation layer which is applied at least regionally to the silicon layer's surface, the passivation layer having a first, at least largely inorganic partial layer and a second partial layer, the second p... | 01/18/2011 |
| 7705432 | Three dimensional six surface conformal die coating Semiconductor die are typically manufactured as a large group of integrated circuit die imaged through photolithographic means on a semiconductor wafer or slice made of silicon. After manufacture, the silicon wafer is thinned, usually by mechanical means, and the wa... | 04/27/2010 |
| 7671448 | Semiconductor device including two organic semiconductor layers It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer a... | 03/02/2010 |
| 7646081 | Low-K dielectric material Method for forming a low dielectric constant structure on a semiconductor substrate by CVD processing. The method comprises using a precursor containing chemical compound having the formula of (R1-R2)n-Si—(X1)4-n, wherein X1 is hydrogen, halogen, acyloxy, alkoxy o... | 01/12/2010 |
| 7626245 | Extreme low-k dielectric film scheme for advanced interconnect An extreme low-k (ELK) dielectric film scheme for advanced interconnects includes an upper ELK dielectric layer and a lower ELK dielectric with different refractive indexes. The refractive index of the upper ELK dielectric layer is greater than the refractive index ... | 12/01/2009 |
| 7602048 | Semiconductor device and semiconductor wafer having a multi-layered insulation film The object of the present invention is to improve the interfacial adhesion between the film with low dielectric constant and protective film, without damaging the excellent dielectric, flatness and gap-filling characteristics of the organic material of low dielectri... | 10/13/2009 |
| 7564120 | Electrical passivation of silicon-containing surfaces using organic layers Electrical structures and devices may be formed and include an organic passivating layer that is chemically bonded to a silicon-containing semiconductor material to improve the electrical properties of electrical devices. In different embodiments, the organic passiv... | 07/21/2009 |
| 7550824 | Low k interconnect dielectric using surface transformation Systems, devices and methods are provided to improve performance of integrated circuits by providing a low-k insulator. One aspect is an integrated circuit insulator structure. One embodiment includes a solid structure of an insulator material, and a precisely deter... | 06/23/2009 |
| 7550825 | Interlayer dielectric and pre-applied die attach adhesive materials The present invention relates to interlayer dielectric materials and pre-applied die attach adhesives, more specifically pre-applied die attach adhesives (such as wafer and other substrate-applied die attach adhesives), methods of applying the interlayer dielectric ... | 06/23/2009 |
| 7528466 | Copper gate electrode of liquid crystal display device and method of fabricating the same A copper gate electrode, applied in a thin-film-transistor liquid crystal display (LCD) device, at least comprises a patterned copper layer formed on a glass substrate, and a barrier layer formed on the patterned copper layer. The barrier layer comprises at least on... | 05/05/2009 |
| 7504709 | Electronic device, method of manufacturing an electronic device, and electronic apparatus An electronic device including: a pair of electrodes; an organic semiconductor layer; and an organic film formed of organic compounds including nonconjugated organic compounds coupled to at least one of surfaces of the pair of electrodes. ... | 03/17/2009 |
| 7470976 | Organic electroluminescent device, manufacturing method therefor, and electronic devices therewith A method for manufacturing an organic EL device comprising: coating a composition including an organic EL material on a plurality of electrodes to form an organic EL layer on each electrode; defining an effectively optical area in which the plurality of electrodes a... | 12/30/2008 |
| 7456490 | Sealing porous dielectrics with silane coupling reagents A method and structure for sealing porous dielectrics using silane coupling reagents is herein described. A sealant chain (silane coupling reagent) is formed from at least silicon, carbon, oxygen, and hydrogen and exposed to a porous dielectric material, wherein the... | 11/25/2008 |
| 7442643 | Methods of forming conductive elements using organometallic layers and flowable, curable conductive materials A conductive element is formed on a substrate by forming an organometallic layer on at least a portion of a surface of the substrate, heating a portion of the organometallic layer, and removing an unheated portion of the organometallic layer. In other methods, a flo... | 10/28/2008 |
| 7425723 | Organic thin-film transistors An organic thin-film transistor has a p-type semiconducting layer, wherein the semiconducting layer comprises a crystalline conjugated polyarylamine of the chemical structure: wherein R1 through R5 are... | 09/16/2008 |
| 7423291 | Semiconductor device and electronic device A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereb... | 09/09/2008 |
| 7411276 | Photosensitive device A photosensitive device having at least an insulator layer including a plurality of photoreceiving regions disposed on a substrate. A plurality of conductive patterns is disposed on the insulator layer without covering the photoreceiving regions. A flattened dielect... | 08/12/2008 |
| 7408260 | Microelectronic assemblies having compliant layers A microelectronic assembly includes a microelectronic element such as a semiconductor chip or wafer having a first surface and contacts accessible at the first surface, a compliant layer overlying the first surface of the microelectronic element, and conductive prot... | 08/05/2008 |
| 7402651 | Macromolecular compounds with a core-shell structure Macromolecular compounds having a core-shell structure are described. Also described is a process for preparing such macromolecular compounds, and their use as semiconductors in electronic structural elements. ... | 07/22/2008 |
| 7382041 | Organic-inorganic composite insulating material for electronic element, method of producing same and field-effect transistor comprising same A method of producing an organic-inorganic composite insulating material for electronic element comprises subjecting a mixture of an organic polymer or its solution and a metal alkoxide or its solution as a starting material to sol-gel reaction of the metal alkoxide... | 06/03/2008 |
| 7382040 | Organic field effect transistor and display using same The present invention provides a field effect transistor that includes a semiconductor layer (15) containing an organic substance, and a first electrode (16), a second electrode (12), and a third electrode (14) that are not in contact wit... | 06/03/2008 |
| 7378682 | Memory element using active layer of blended materials The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive laye... | 05/27/2008 |
| 7372200 | Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment The present invention uses plastic film in vacuum sealing an OLED. Inorganic insulating films which can prevent oxygen or water from being penetrated therein and an organic insulating film which has a smaller internal stress than that of the inorganic insulating fil... | 05/13/2008 |
| 7368331 | Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an isolati... | 05/06/2008 |
| 7368804 | Method and apparatus of stress relief in semiconductor structures A method, apparatus and system are provided for relieving stress in the via structures of semiconductor structures whenever a linewidth below a via is larger than a ground-rule, including providing a via at least as large as the groundrule, providing a landing pad a... | 05/06/2008 |
| 7365026 | CHsacrificial layer for cu/low-k interconnects A semiconductor method of manufacturing involving low-k dielectrics is provided. The method includes depositing a hydrocarbon of the general composition CxHy on the surface of a low-k dielectric. The hydrocarbon layer is deposited by reacting a... | 04/29/2008 |
| 7365103 | Compositions for dark-field polymerization and method of using the same for imprint lithography processes A composition is provided and a method of using the same to form a pattern on a substrate using imprint lithography employing dark-field polymerization is disclosed. The composition includes a polymerizable bisvinylether and an initiator that produces an acid in res... | 04/29/2008 |
| 7365990 | Circuit board arrangement including heat dissipater A circuit board arrangement includes a heat dissipater. A cooling body is arranged near a first circuit board and a second circuit board. Both circuit boards have electronic devices on two major surfaces. The cooling body is arranged between the electronic devices o... | 04/29/2008 |
| 7365414 | Component packaging apparatus, systems, and methods Dielectric materials comprising release agents are described. Also described are a process for improving the proccessability of dielectric materials during hot embossing, substrates prepared by hot embossing, and integrated-circuit packages comprising the improved s... | 04/29/2008 |
| 7361927 | Transistor, circuit board, display and electronic equipment A transistor having at least one of a source electrode and a drain electrode being formed of a porous film is described. The transistor maintains its characteristics even after being subjected to a high temperature and high humidity environment. The transistor may b... | 04/22/2008 |
| 7358610 | Top layers of metal for high performance IC's A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an ... | 04/15/2008 |
