Did You Know...
...that several people are credited with the invention of the flush toilet? Most people have heard of Thomas Crapper (1837-1910), the sanitary engineer who invented the valve-and-siphon arrangement that made the modern toilet possible. Another claimant to "the throne" was British inventor Alexander Cumming who patented a toilet in 1775. Then there's a nameless Minoan (a native of ancient Crete) who lived 4,000 years ago who supposedly was ahead of his time and created the first flush toilet!
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| Number | Title | Issue Date |
| 8053776 | Vertical diode and method for manufacturing same and semiconductor memory device In a vertical diode, an N+-type layer, an N−-type layer, and a P+-type layer are stacked in this order on a lower electrode film, and an upper electrode film is provided thereon. The effective impurity concentration of the Nâˆ... | 11/08/2011 |
| 8039843 | Semiconductor wafer, semiconductor device and method of fabricating the same A semiconductor substrate according to an embodiment includes: a first semiconductor wafer having a first crystal; and a second semiconductor wafer formed of a second crystal substantially same as the first crystal on the first semiconductor wafer, a crystal-axis di... | 10/18/2011 |
| 8022408 | Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film tra... | 09/20/2011 |
| 7956360 | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films a... | 06/07/2011 |
| 7952097 | Semiconductor device and method of fabricating the same A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a m... | 05/31/2011 |
| 7847293 | Growth of reduced dislocation density non-polar gallium nitride Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density. ... | 12/07/2010 |
| 7777226 | Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same A polycrystalline silicon thin film to be used in display devices, the thin film comprising adjacent primary grain boundaries that are not parallel to each other and do not contact each other, wherein an area surrounded by the primary grain boundaries is larger than... | 08/17/2010 |
| 7745826 | Thin film transistor substrate, electronic apparatus, and methods for fabricating the same A TFT substrate includes a substrate and at least a TFT disposed thereon. The TFT includes a semiconductor island and at least a gate. The semiconductor island has a source region, a drain region, and a channel region interposed therebetween. The semiconductor islan... | 06/29/2010 |
| 7714330 | Si nanowire substrate A silicon nanowire substrate having a structure in which a silicon nanowire film having a fine line-width is formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing t... | 05/11/2010 |
| 7679087 | Semiconductor active region of TFTs having radial crystal grains through the whole area of the region There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequ... | 03/16/2010 |
| 7655950 | Method of manufacturing an active matrix substrate and an image display device using the same The present invention provides a manufacturing method of a high performance active matrix substrate at a high throughput with a less expensive apparatus, and an image display device using the active matrix substrate. On a stage moving in the short axis direction X a... | 02/02/2010 |
| 7608857 | Field effect transistor having a structure in which an organic semiconductor that forms a channel is made of a single crystal or a polycrystal of organic molecules A TFT having a large mobility of carriers that are conducted through a channel as compared with a conventional organic TFT, and a method of manufacturing the TFT inexpensively and easily are provided. The channel is formed of a semiconductor organic molecular crysta... | 10/27/2009 |
| 7557374 | Substrates and methods for fabricating the same An embodiment of the invention provides a substrate. The substrate comprises a single crystal substrate. An epitaxial buffer film is on the single crystal substrate. An epitaxial ZnGa2O4 is on the epitaxial buffer film. ... | 07/07/2009 |
| 7528408 | Semiconductor thin film and process for production thereof To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconducto... | 05/05/2009 |
| 7491972 | Polysilicon semiconductor thin film substrate, method for producing the same, semiconductor device, and electronic device A semiconductor device and a method of manufacture thereof by forming an amorphous semiconductor film on the surface of an insulative substrate, and irradiating the amorphous semiconductor film with a laser beam to crystallize it to form a polycrystalline semiconduc... | 02/17/2009 |
| 7488980 | Thin film semiconductor device and fabrication method therefor A relaying pad is formed in a predetermined portion in an insulation layer of the single-crystal thin film device, in a region where the single-crystal thin film device is formed. The relaying pad is for providing connection wiring through the insulator substrate. W... | 02/10/2009 |
| 7456428 | Manufacturing method of semiconductor film and image display device A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallize... | 11/25/2008 |
| 7449719 | Semiconductor device and method of manufacturing the same A gate insulating film is formed using a plasma on a three-dimensional silicon substrate surface having a plurality of crystal orientations. The plasma gate insulating film experiences no increase in interface state in any crystal orientations and has a uniform thic... | 11/11/2008 |
| 7442958 | Thin film semiconductor device A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow... | 10/28/2008 |
| 7442594 | Method for manufacturing a flat panel display with improved white balance Disclosed is a flat panel display capable of improving a white balance by making channel regions of transistors of R, G, and B unit pixels with different current mobilities. The flat panel display includes a plurality of pixels, each of the pixels including R, G and... | 10/28/2008 |
| 7439110 | Strained HOT (hybrid orientation technology) MOSFETs A strained HOT MOSFET fabrication method. The MOSFET fabrication method includes providing a semiconductor structure which includes (a) a first semiconductor layer having a first crystallographic orientation, (b) a buried insulating layer on top of the first semicon... | 10/21/2008 |
| 7439542 | Hybrid orientation CMOS with partial insulation process The present invention provides a method of integrated semiconductor devices such that different types of devices are formed upon a specific crystallographic orientation of a hybrid substrate. In accordance with the present invention, junction capacitance of one of t... | 10/21/2008 |
| 7432149 | CMOS on SOI substrates with hybrid crystal orientations Methods and structures for CMOS devices with hybrid crystal orientations using double SOI substrates is provided. In accordance with preferred embodiments, a manufacturing sequence includes the steps of forming an SOI silicon epitaxy layer after the step of forming ... | 10/07/2008 |
| 7407840 | Display device, method of production of the same, and projection type display device A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer o... | 08/05/2008 |
| 7372073 | Semiconductor thin film, semiconductor device and manufacturing method thereof A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-like crystals... | 05/13/2008 |
| 7371619 | Semiconductor device and method of manufacturing the same In order to obtain a thin-film transistor having high characteristics using a metal element for accelerating the crystallization of silicon, a nickel element is selectively added to the surface of an amorphous silicon film (103) in regions (101) and ( | 05/13/2008 |
| 7365358 | Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device A method of fabricating a single crystal thin film includes forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grai... | 04/29/2008 |
| 7364992 | Method of forming polycrystalline silicon thin film and method of manufacturing thin film transistor using the method A method of forming a polycrystalline silicon thin film with improved electrical characteristics and a method of manufacturing a thin film transistor using the method of forming the polycrystalline silicon thin film. The method includes forming an amorphous silicon ... | 04/29/2008 |
| 7358164 | Crystal imprinting methods for fabricating substrates with thin active silicon layers Methods of forming semiconductor structures characterized by a thin active silicon layer on an insulating substrate by a crystal imprinting or damascene approach. The methods include patterning an insulating layer to define a plurality of apertures, filling the aper... | 04/15/2008 |
| 7357963 | Apparatus and method of crystallizing amorphous silicon A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of... | 04/15/2008 |
| 7359010 | Method for producing display device In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surfac... | 04/15/2008 |
| 7358194 | Sequential deposition process for forming Si-containing films A method is provided for forming a Si film in sequential deposition process. The method includes providing a substrate in a process chamber, forming a chlorinated Si film by exposing the substrate to a chlorinated silane gas, and dry etching the chlorinated Si film ... | 04/15/2008 |
| 7354810 | Method of and apparatus for manufacturing semiconductor thin film, and method of manufacturing thin film transistor A method of manufacturing a semiconductor thin film includes (A) forming an amorphous semiconductor film on a substrate, (B) irradiating a beam to a surface of the amorphous semiconductor film such that a predetermined region of the amorphous semiconductor film is m... | 04/08/2008 |
| 7351646 | Laser annealing method and laser annealing device In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the ... | 04/01/2008 |
| 7351660 | Process for producing high performance interconnects A method for fabricating high performance vertical and horizontal electrical connections in a three dimensional semiconductor structure. A dielectric film is imprinted with a stamp pattern at high vacuum and with precise temperature and stamping pressure control. Th... | 04/01/2008 |
| 7348222 | Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the metal element from the semiconductor film. In the present inventio... | 03/25/2008 |
| 7348599 | Semiconductor device and manufacturing method thereof A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at l... | 03/25/2008 |
| 7341910 | Method for forming a flash memory by using a microcrystalline polysilicon layer as a floating gate This invention provides a method for forming a microcrystalline polysilicon layer by using silane or dislane with introducing hydrogen gas. This microcrystalline polysilicon layer can be used as a floating gate of a flash memory to improve the character of the flash... | 03/11/2008 |
| 7339213 | Semiconductor device having a triple gate transistor and method for manufacturing the same In a semiconductor capable of reducing NBTI and a method for manufacturing the same, a multi-gate transistor includes an active region, gate dielectric, channels in the active region, and gate electrodes, and is formed on a semiconductor wafer. The active region has... | 03/04/2008 |
| 7339255 | Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the su... | 03/04/2008 |
