Class 257/634 - Insulating coating of glass composition containing component to adjust melting or softening temperature (e.g., low melting point glass)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the insulating coating comprises
No. of patents: 109
Last issue date: 05/03/2011

«First «Previous1 2 3 Next»Last»

Number	Title	Issue Date
7936050	Semiconductor device and method of fabricating semiconductor device A semiconductor device may be fabricated according to a method that reduces stain difference of a passivation layer in the semiconductor device. The method may include forming top wiring patterns in a substrate, depositing a primary undoped silicate glass (USG) laye...	05/03/2011
7595545	Anodic bonding apparatus, anodic bonding method, and method of producing acceleration sensor An anodic bonding apparatus includes a first electrode and a second electrode. The first electrode has a first surface, and the second electrode has a second surface facing the first surface. The first surface includes a first central area; a first substrate placing...	09/29/2009
7531891	Semiconductor device A semiconductor device having improved adhesiveness between films composing an interlayer insulating film is presented by providing multilayered films in the interlayer insulating films having film density distribution, in which the film density is gradually changes...	05/12/2009
7429789	Fluoropolymer dielectric composition for use in circuitized substrates and circuitized substrate including same A dielectric composition for forming a dielectric layer usable in circuitized substrates such as PCBs, chip carriers and the like, the composition including at least two fluoropolymers and two inorganic fillers. A circuitized substrate including at least one such di...	09/30/2008
7405466	Method of fabricating microelectromechanical system structures A method of simultaneously bonding components, comprising the following steps. At least first, second and third components are provided and comprise: at least one glass component; and at least one conductive or semiconductive material component. The order of stackin...	07/29/2008
7371697	Ion-assisted oxidation methods and the resulting structures Oxidation methods and resulting structures including providing an oxide layer on a substrate and then re-oxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere containing at least one oxidant. The oxide layer may be provided over d...	05/13/2008
7371695	Use of TEOS oxides in integrated circuit fabrication processes A method for manufacturing a low temperature removable silicon dioxide hard mask for patterning and etching is provided, wherein tetra-ethyl-ortho-silane (TEOS) is used to deposit a silicon dioxide hard mask. ...	05/13/2008
7358587	Semiconductor structures In one aspect, the invention includes a method of forming a material within an opening, comprising: a) forming an etch-stop layer over a substrate, the etch-stop layer having an opening extending therethrough to expose a portion of the underlying substrate and compr...	04/15/2008
7352045	Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates A SiC die with Os and/or W/WC/TiC contacts and metal conductors is encapsulated either alone or on a ceramic substrate using a borosilicate (BSG) glass that is formed at a temperature well below upper device operating temperature limits but serves as a stable protec...	04/01/2008
7338857	Increasing adherence of dielectrics to phase change materials A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material. ...	03/04/2008
7301217	Decoupling capacitor design A thin-dielectric unit capacitor is disclosed having a first node coupled to a first circuit connection point and a second node coupled to a second circuit connection point. It further contains a first and second thin-dielectric capacitors connected in series betwee...	11/27/2007
7294201	Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device A crystal substrate and a crystal film of a III-V compound of the nitride system which are manufactured easily and have few dislocations as well as a method of manufacturing a crystal and a method of manufacturing a device with the use thereof are disclosed. On a ba...	11/13/2007
7294909	Electronic package repair process A multilayer ceramic repair process which provides a new electrical repair path to connect top surface vias. The repair path is established between a defective net and a redundant repair net contained within the multilayer ceramic substrate. The defective net and th...	11/13/2007
7276788	Hydrophobic foamed insulators for high density circuits A conductive system and a method of forming an insulator for use in the conductive system is disclosed. The conductive system comprises a foamed polymer layer on a substrate. The foamed polymer layer has a surface that is hydrophobic, and a plurality of conductive s...	10/02/2007
7262477	Semiconductor device There is provided a semiconductor device including a semiconductor substrate with a trench, and a particulate insulating layer filling at least a lower portion of the trench and containing insulating particles. The semiconductor device may further include a reflowab...	08/28/2007
RE39690	Enhanced planarization technique for an integrated circuit A method for planarizing integrated circuit topographies, wherein, after a first layer of spin-on glass is deposited, a layer of low-temperature oxide is deposited before a second layer of spin-on glass. ...	06/12/2007
7224064	Semiconductor device having conductive interconnections and porous and nonporous insulating portions A semiconductor device and manufacturing method, wherein the semiconductor device has a semiconductor substrate on which a plurality of elements constituting a logic type device have been formed; a first interlayer insulating film on the semiconductor substrate; a p...	05/29/2007
7135369	Atomic layer deposited ZrAlO dielectric layers including ZrAlO An atomic layer deposited ZrAlxOy dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pulsing a zirconium-c...	11/14/2006
7078814	Method of forming a semiconductor device having air gaps and the structure so formed A method of forming a semiconductor device, and the device so formed. Depositing alternating layers of a first and a second dielectric material, wherein the first and second dielectric materials are selectively etchable at different rates. Forming a first feature wi...	07/18/2006
7075187	Coating material over electrodes to support organic synthesis There is disclosed a coating material formulation for layering a plurality of electrodes to provide a substrate for the electrochemical synthesis of organic oligomers. Specifically, there is disclosed a coating layer of from about 0.5 to about 100 microns thick and ...	07/11/2006
7071113	Process for removal of photoresist mask used for making vias in low K carbon-doped silicon oxide dielectric material, and for removal of etch residues from formation of vias and removal of photoresist mask A process for removal of a photoresist mask used to etch openings in low k carbon-doped silicon oxide dielectric material of an integrated circuit structure, and for removing etch residues remaining from either the etching of the openings or removal of the resist ma...	07/04/2006
7060638	Method of forming low dielectric constant porous films A porous dielectric film for use in electronic devices is disclosed that is formed by removal of soluble nano phase porogens. A silicon based dielectric film having soluble porogens dispersed therein is prepared by chemical vapor deposition (CVD) or by spin on glass...	06/13/2006
7049786	Unipolar drive topology for permanent magnet brushless DC motors and switched reluctance motors A unipolar drive includes a booster, an energy storage module, and a unipolar inverter. The booster increase a voltage received from a power supply to produce an energy output. The energy storage module store at least some of the energy output by the booster. The un...	05/23/2006
7041586	Semiconductor device having a multilayer interconnection structure A semiconductor device includes a multilayer interconnection structure including an organic interlayer insulation film in which a conductor pattern is formed by a damascene process, wherein the organic interlayer insulation film carries thereon an organic spin-on-gl...	05/09/2006
7030468	Low k and ultra low k SiCOH dielectric films and methods to form the same Dielectric materials including elements of Si, C, O and H having specific values of mechanical properties (tensile stress, elastic modulus, hardness cohesive strength, crack velocity in water) that result in a stable ultra low k film which is not degraded by water v...	04/18/2006
7026256	Method for forming flowable dielectric layer in semiconductor device The method for forming a flowable dielectric layer without micro-voids therein in a semiconductor device is employed to utilize a ultra-violet (UV) bake process. The method includes steps of: forming a plurality of patterns on a semiconductor substrate, wherein narr...	04/11/2006
7015168	Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation The invention provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes containing one or more organofluoro silanes having the formula SiR1R2R...	03/21/2006
6995691	Bonded structure using reacted borosilicate mixture Environmental sensors and other bodies, together with associated lead wires, are mounted to a oxidizable substrate for high temperature applications by means of a reacted borosilicate mixture (RBM) that secures the body relative to the substrate via of an oxide inte...	02/07/2006
6979848	Memory system with conductive structures embedded in foamed insulator A conductive system and a method of forming an insulator for use in the conductive system is disclosed. The conductive system comprises a foamed polymer layer on a substrate. The foamed polymer layer has a surface that is hydrophobic, and a plurality of conductive s...	12/27/2005
6972223	Use of atomic oxygen process for improved barrier layer A composite barrier layer formed between a glass film and active regions of a memory device is disclosed. The composite barrier layer comprises an oxide layer formed by atomic deposition process and an insulating layer, for example a nitride barrier layer, formed ov...	12/06/2005
6967172	Colloidal silica composite films for premetal dielectric applications A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench is...	11/22/2005
6955997	Laser thermal annealing method for forming semiconductor low-k dielectric layer A method of manufacturing a semiconductor device, including depositing a first layer of dielectric material onto the device, laser thermal annealing a surface of the first layer, and depositing a second layer of dielectric material over the laser thermal annealed su...	10/18/2005
6953983	Low dielectric constant STI with SOI devices Techniques of shallow trench isolation and devices produced therefrom are shown. The techniques of shallow trench isolation utilize foamed polymers, cured aerogels or air gaps as the insulation medium. Such techniques facilitate lower dielectric constants than the s...	10/11/2005
6943125	Method for manufacturing semiconductor device Provided is a method for manufacturing a semiconductor device including a plurality of different semiconductor elements with a transistor for fabricating the semiconductor device formed on a semiconductor substrate, an interlayer insulation film formed all over the ...	09/13/2005
6930056	Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for integrated circuit structure A process for forming an integrated circuit structure comprises forming a layer of low k dielectric material over a previously formed integrated circuit structure, and treating the upper surface of the layer of low k dielectric material with a plasma to form a layer...	08/16/2005
6924868	Liquid crystal display device, method for fabricating the same, and portable telephone using the same A liquid crystal display device comprises a liquid crystal display panel and a semiconductor integrated circuit for driving and controlling the liquid crystal display panel. The number of input/output wires connected to I/O terminals (bonding pads) of the semiconduc...	08/02/2005
6911714	Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates A SiC die with Os and/or W/WC/TiC contacts and metal conductors is encapsulated either alone or on a ceramic substrate using a borosilicate (BSG) glass that is formed at a temperature well below upper device operating temperature limits but serves as a stable protec...	06/28/2005
6864561	Method and apparatus for reducing fixed charge in semiconductor device layers The fixed charge in a borophosphosilicate glass insulating film deposited on a semiconductor device is reduced by reacting an organic precursor such as TEOS with O3. When done at temperatures higher than approximately 480 degrees C., the carbon level in t...	03/08/2005
6844612	Low dielectric constant fluorine-doped silica glass film for use in integrated circuit chips and method of forming the same A fluorine-doped silica glass (FSG) dielectric layer includes a number of sublayers. Each sublayer is doped with fluorine in such a way that the doping concentration of fluorine in the sublayer decreases as one moves from an interior region of the sublayer towards o...	01/18/2005
6791163	Chip electronic component A chip electronic component including a ceramic element and terminal electrodes with metal coating thereon formed on the surface of the ceramic element. A glass layer is formed on a part of the surface of the ceramic element where the terminal electrodes are not for...	09/14/2004

«First «Previous1 2 3 Next»Last»

PatentStorm

Bizarre Patents

PatentStorm News

Class 257/634 - Insulating coating of glass composition containing component to adjust melting or softening temperature (e.g., low melting point glass)