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Actor Marlon Brando has four patents, all named "Drumhead tensioning device and method."
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| Number | Title | Issue Date |
| 8188576 | Compound for filling small gaps in a semiconductor device, composition including the compound, and method of fabricating a semiconductor capacitor A compound for filling small gaps in a semiconductor device, a composition for filling small gaps in a semiconductor device, and a method of fabricating a semiconductor capacitor, the compound including hydrolysates prepared by hydrolysis, in the presence of an acid... | 05/29/2012 |
| 8148802 | Passivation of aluminum nitride substrates The present invention provides methods of protecting a surface of an aluminum nitride substrate. The substrate with the protected surface can be stored for a period of time and easily activated to be in a condition ready for thin film growth or other processing. In ... | 04/03/2012 |
| 8106487 | Semiconductor device having an inorganic coating layer applied over a junction termination extension A semiconductor device includes an inorganic coating layer to at least partially cover a junction termination extension. ... | 01/31/2012 |
| 8089138 | Surface-hydrophobicized film, material for formation of surface-hydrophobicized film, wiring layer, semiconductor device and process for producing semiconductor device A surface-hydrophobicized film is provided which is in contact with an insulating film, and has a higher hydrophobicity than the insulating film at the time of the contact, and which is in contact, on an opposite side of the surface-hydrophobicized film, with wiring... | 01/03/2012 |
| 8058710 | Interconnects having sealing structures to enable selective metal capping layers Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which... | 11/15/2011 |
| 8035201 | Reliable interconnection Embodiments relate to a method for forming reliable interconnects by the use of a device layer that can serve as a barrier or an etch stop layer, among other applications. The device layer is UV resistant in that its dielectric constant and stress remain stable or r... | 10/11/2011 |
| 8008752 | Component for an information display device A component for an information display device has a transparent substrate having a surface that has a first refractive index. The surface is selectively coated in a pattern comprising a transparent electrically conductive layer disposed at least at a first region of... | 08/30/2011 |
| 7999355 | Aminosilanes for shallow trench isolation films The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates,... | 08/16/2011 |
| 7999356 | Composition for film formation, insulating film, semiconductor device, and process for producing the semiconductor device According to one aspect of the present invention, there is provided a composition for film formation, comprising a compound represented by general formula (I) or a hydrolyzed-dehydrocondensation product thereof: X13-mR1 | 08/16/2011 |
| 7973390 | Modifier for low dielectric constant film, and method for production thereof A modifier for lowering relative dielectric constant of a low dielectric constant film used in semiconductor devices, the modifier of the low dielectric constant film being characterized in that it contains as an effective component a silicon compound represented by... | 07/05/2011 |
| 7952174 | Method and apparatus providing air-gap insulation between adjacent conductors using nanoparticles A semiconductor device and a method of forming it are disclosed in which at least two adjacent conductors have an air-gap insulator between them which is covered by nanoparticles of insulating material being a size which prevent the nanoparticles from substantially ... | 05/31/2011 |
| 7928536 | Roughness reducing film at interface, materials for forming roughness reducing film at interface, wiring layer and semiconductor device using the same, and method for manufacturing semiconductor device Techniques for obtaining a wiring layer with a high TDDB resistance and little leakage current, and accordingly, for manufacturing a highly reliable semiconductor device with a small electric power consumption are provided, in which an interfacial roughness reducing... | 04/19/2011 |
| 7923819 | Interlayer insulating film, wiring structure and electronic device and methods of manufacturing the same A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielec... | 04/12/2011 |
| 7884449 | Process for precision placement of integrated circuit overcoat material The present invention provides a process for manufacturing an integrated circuit (IC) package and an integrated circuit (IC) package. The process, without limitation, includes providing an integrated circuit chip having a configuration, and forming a layer of overco... | 02/08/2011 |
| 7772678 | Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygen After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Buildin... | 08/10/2010 |
| 7608912 | Technique for creating different mechanical strain in different CPU regions by forming an etch stop layer having differently modified intrinsic stress The present invention provides a technique for reducing stress or stress gradients in highly sensitive device regions, such as cache areas, while still providing high transistor performance in logic areas by correspondingly providing contact etch stop layers with co... | 10/27/2009 |
| 7589397 | System and method for providing a uniform oxide layer over a laser trimmed fuse with a differential wet etch stop technique A system and method is disclosed for using a differential wet etch stop technique to provide a uniform oxide layer over a metal layer in a laser trimmed fuse. A layer of boron doped oxide with a slow etch rate is placed over the metal layer. A layer of phosphorus do... | 09/15/2009 |
| 7511360 | Semiconductor device having stressors and method for forming N channel and P channel transistors are enhanced by applying stressor layers of tensile and compressive, respectively, over them. A previously unknown problem was discovered concerning the two stressor layers, which both may conveniently be nitride but made somewhat... | 03/31/2009 |
| 7498662 | Dielectric media including surface-treated metal oxide particles Briefly, the present invention provides an electronic device, typically a transistor or a capacitor, comprising at least one electrically conductive electrode and, adjacent to the electrode, a dielectric layer; wherein the dielectric layer comprises a polymeric matr... | 03/03/2009 |
| 7482676 | Compositions for preparing low dielectric materials Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention... | 01/27/2009 |
| 7470974 | Substantially transparent material for use with light-emitting device The invention provides a substantially transparent material comprising particles of an inorganic titanate or an inorganic zirconate and at least one compound, wherein the particles are uniformly dispersed in the at least one compound, and wherein the particles are b... | 12/30/2008 |
| 7446394 | Semiconductor device fabricated by selective epitaxial growth method A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulat... | 11/04/2008 |
| 7423330 | Semiconductor device with strain A semiconductor device includes: a semiconductor substrate having a p-MOS region; an element isolation region formed in a surface portion of the semiconductor substrate and defining p-MOS active regions in the p-MOS region; a p-MOS gate electrode structure formed ab... | 09/09/2008 |
| 7417305 | Electronic devices at the wafer level having front side and edge protection material and systems including the devices Methods for applying a dielectric protective layer to a wafer in wafer-level chip scale package manufacture are disclosed. A flowable dielectric protective material with fluxing capability is applied over the active surface of an unbumped semiconductor wafer to cove... | 08/26/2008 |
| 7411275 | Semiconductor device comprising an inorganic insulating film and method of manufacturing the same It is an object to provide an insulating film having a very low dielectric constant and a great mechanical strength. Moreover, it is another object to provide a semiconductor device capable of reducing both a capacity between wiring layers and a capacity between wir... | 08/12/2008 |
| 7400031 | Asymmetrically stressed CMOS FinFET A CMOS device comprising a FinFET comprises at least one fin structure comprising a source region; a drain region; and a channel region comprising silicon separating the source region from the drain region. The FinFET further comprises a gate region comprising a N+ ... | 07/15/2008 |
| 7397126 | Semiconductor device The present invention provides inhibiting an electrical leakage caused by anion migration. A trenched portion 15 is provided as ion migration-preventing zone between a source electrode 4 and a gate electrode 5. The trenched portion 15 is ... | 07/08/2008 |
| 7388278 | High performance field effect transistors on SOI substrate with stress-inducing material as buried insulator and methods The present invention provides a semiconductor structure that includes a high performance field effect transistor (FET) on a semiconductor-on-insulator (SOI) in which the insulator thereof is a stress-inducing material of a preselected geometry. Such a structure ach... | 06/17/2008 |
| 7385276 | Semiconductor device, and method for manufacturing the same The invention is characterized by attaining a lower dielectric constant and including an inorganic dielectric film which is formed on the surface of a substrate and has a cyclic porous structure having a pore ratio of 50% or higher. ... | 06/10/2008 |
| 7372113 | Semiconductor device and method of manufacturing the same Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the ga... | 05/13/2008 |
| 7368336 | Organic insulator, organic thin film transistor array panel including organic insulator, and manufacturing method therefor An insulating film according to an embodiment of the present invention has Chemical Formula 1 wherein the Rs are equal to or different from each other, m is an integer, the Rs have Chemical Formula ... | 05/06/2008 |
| 7365403 | Semiconductor topography including a thin oxide-nitride stack and method for making the same A semiconductor topography is provided which includes a silicon dioxide layer with a thickness equal to or less than approximately 10 angstroms and a silicon nitride layer arranged upon the silicon dioxide layer. In addition, a method is provided which includes grow... | 04/29/2008 |
| 7364989 | Strain control of epitaxial oxide films using virtual substrates A method of controlling strain in a single-crystal, epitaxial oxide film, includes preparing a silicon substrate; forming a silicon alloy layer taken from the group of silicon alloy layer consisting of Si1-xGex and Si1-yCy | 04/29/2008 |
| 7357977 | Ultralow dielectric constant layer with controlled biaxial stress A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low c... | 04/15/2008 |
| 7352000 | Organic thin film transistor with polymeric interface Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated cir... | 04/01/2008 |
| 7352022 | Capacitor having a dielectric layer that reduces leakage current and a method of manufacturing the same A capacitor having a dielectric layer including a composite oxide, the composite oxide including a transition metal and including a lanthanide group element, a memory device including the same and a method of manufacturing the capacitor are provided. The transition ... | 04/01/2008 |
| 7348447 | Aromatic disiloxane compositions Processes for preparing aromatic matrix materials by metal hydrosilylation followed by alcholysis are provided. Silicon-containing layers that contain such aromatic matrix materials are also provided, as well as electrophotographic photoreceptors and electrophotogra... | 03/25/2008 |
| 7345368 | Semiconductor device and the manufacturing method for the same A semiconductor device has a semiconductor substrate having first and second surface, a first resin film formed on the first surface of the semiconductor substrate and a second resin film formed on the second surface of the semiconductor substrate. A projection elec... | 03/18/2008 |
| 7345351 | Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same The present invention relates to a coating composition for insulating film production, a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device... | 03/18/2008 |
| 7340372 | Apparatus and method for investigating parameters of layers deposited on semiconductor wafers In order to determine the dielectric constant of a layer deposited on a semiconductor wafer (2), the density of the layer is obtained. To obtain that density, the wafer (2) without the layer is weighed in a weighing chamber (4) in which a weighi... | 03/04/2008 |
