Class 257/624 - With low resistance ohmic connection means along exposed mesa edge (e.g., contact or heavily doped region along exposed mesa to reduce "skin effect" losses in microwave diode)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein there is a low resistance ohmic connection
No. of patents: 79
Last issue date: 01/10/2012

«First «Previous1 2 Next»Last»

Number	Title	Issue Date
8093688	Device comprising an ohmic via contact, and method of fabricating thereof Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal layer, depositing an insulating layer over the conductive barrier la...	01/10/2012
7936049	Nitride semiconductor device and manufacturing method thereof It is an object of the present invention to provide a nitride semiconductor device with low parasitic resistance by lowering barrier height to reduce contact resistance at an interface of semiconductor and metal. The nitride semiconductor device includes a GaN layer...	05/03/2011
7777305	Nitride semiconductor device and manufacturing method thereof It is an object of the present invention to provide a nitride semiconductor device with low parasitic resistance by lowering barrier height to reduce contact resistance at an interface of semiconductor and metal. The nitride semiconductor device includes a GaN layer...	08/17/2010
7705431	Method of improving adhesion between two dielectric films A method of improving adhesion between layers in the formation of a semiconductor device and integrated circuit, and the resultant intermediate semiconductor structure, which include a substrate layer with a low k insulating layer thereover. The low k insulating lay...	04/27/2010
7687889	Organic electroluminescent display device having electrical communication between conducting layer and cathode layer The present invention relates to a light emitting display device, such as an organic electroluminescent device, and a method for manufacturing the same. Particularly, the present invention relates to reducing electrical resistance between the scan lines and the cath...	03/30/2010
7381997	Lateral silicided diodes A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the...	06/03/2008
7368822	Copper metalized ohmic contact electrode of compound device The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resis...	05/06/2008
7335927	Lateral silicided diodes A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the...	02/26/2008
7208784	Single-electron transistor for detecting biomolecules A single-electron transistor includes a projecting feature, such as a pyramid, that projects from a face of a substrate. A first electrode is provided on the substrate face that extends onto the projecting feature. A second electrode is provided on the substrate fac...	04/24/2007
7170101	Nitride-based semiconductor light-emitting device and manufacturing method thereof A nitride-based semiconductor light-emitting device includes a light-emitting element having an n-GaN substrate and a nitride-based semiconductor multilayer film formed on the n-GaN substrate. The n-GaN substrate of the light-emitting element is fixed to a mount sur...	01/30/2007
7154148	Hybrid circuit and electronic device using same There is disclosed a hybrid circuit in which a circuit formed by TFTs is integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is fabricated on another substrate. Terminals extend through the quartz subst...	12/26/2006
6924546	Low-capacity vertical diode The invention concerns a low-capacity vertical diode designed to be mounted by a front surface made in a semiconductor substrate (1), comprising a first zone projecting relative to the surface of the substrate including at least a semiconductor layer (3	08/02/2005
6911102	Laminated type semiconductor ceramic element and production method for the laminated type semiconductor ceramic element A laminated type semiconductor ceramic element is provided with good PTC characteristics, low room temperature resistance value and improved withstand voltage of 15V or higher. Semiconductor ceramic layers made from a semiconductor ceramic containing barium titanate...	06/28/2005
6906401	Method to fabricate high-performance NPN transistors in a BiCMOS process A method of forming a quasi-self-aligned heterojunction bipolar transistor (HBT) that exhibits high-performance is provided. The method includes the use of a patterned emitter landing pad stack which serves to improve the alignment for the emitter-opening lithograph...	06/14/2005
6888171	Light emitting diode A semi-conductor light emitting diode includes closely spaced n and p electrodes formed on the same side of a substrate to form an LED with a small foot-print. A semi-transparent U shaped p contact layer is formed along three sides of the top surface of the underlyi...	05/03/2005
6853079	Conductive trace with reduced RF impedance resulting from the skin effect The radio frequency (RF) impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fins that extend away from the base region. When formed in a spiral configuration having a number of loops, the m...	02/08/2005
6835967	Semiconductor diodes with fin structure A semiconductor diode structure is provided which includes a substrate; a fin formed of a semiconducting material positioned vertically on the substrate, the fin includes a first heavily-doped region of a first doping type on one side and a second heavily-doped regi...	12/28/2004
6818952	Damascene gate multi-mesa MOSFET A multi-mesa FET structure with doped sidewalls for source/drain regions and methods for forming the same are disclosed. The exposure of the source and drain sidewalls during the manufacture enables uniform doping of the entire sidewalls especially when geometry-ind...	11/16/2004
6794720	Dynamic threshold voltage metal insulator field effect transistor In a semiconductor device in which the gate electrode of a MISFET formed on a semiconductor substrate is electrically connected to a well region under the channel of the MISFET, the MISFET is formed in an island-shaped element region formed on the semiconductor subs...	09/21/2004
6710410	Hybrid circuit and electronic device using same There is disclosed a hybrid circuit in which a circuit formed by TFTs is integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is fabricated on another substrate. Terminals extend through the quartz subst...	03/23/2004
6653653	Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes A single-electron transistor includes a projecting feature, such as a pyramid, that projects from a face of a substrate. A first electrode is provided on the substrate face that extends onto the projecting feature. A second electrode is provided on the su...	11/25/2003
6515334	Hybrid circuit and electronic device using same There is disclosed a hybrid circuit in which a circuit formed by TFTs is integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is fabricated on another substrate. Terminals extend through the q...	02/04/2003
6515348	Semiconductor device with FET MESA structure and vertical contact electrodes A semiconductor device comprises one or more field effect devices (FD) having source and drain regions (5 and 6) spaced apart by a body region (3a). A gate structure (7a, 7b), preferably in a trench (4), controls a conduction channel in a portion (3b) of ...	02/04/2003
6515340	Semiconductor device A semiconductor device having a device separation region and an active region includes a gate oxide film, a source/drain region, and an electrode which is electrically coupled to the source/drain region. The active region is in contact with the gate oxide...	02/04/2003
6437423	Method for fabricating semiconductor components with high aspect ratio features A method for fabricating an interconnect with high aspect ratio contact members is provided. The interconnect is adapted to make electrical connections with a semiconductor component, such as a die, a wafer, or a chip scale package for testing. The method...	08/20/2002
6407443	Nanoscale patterning for the formation of extensive wires A method for forming a platen useful for forming nanoscale wires for device applications comprises: (a) providing a substrate having a major surface; (b) forming a plurality of alternating layers of two dissimilar materials on the substrate to form a stac...	06/18/2002
6359290	Self-aligned bump bond infrared focal plane array architecture A method of making a diode and the diode wherein there is provided a substrate of p-type group II-VI semiconductor material and an electrically conductive material capable of forming an ohmic contact with the substrate is forced into the lattice of the su...	03/19/2002
6337513	Chip packaging system and method using deposited diamond film A chip packaging system and method for providing enhanced thermal cooling including a first embodiment wherein a diamond thin film is used to replace at least the surface layer of the existing packaging material in order to form a highly heat conductive p...	01/08/2002
6329702	High frequency carrier A high frequency carrier is provided which comprises: (a) a planar ceramic substrate having first and second faces and (b) at least one feed-through extending from the first face to the second face. The at least one feed-through comprises a pedestal of do...	12/11/2001
6274889	Method for forming ohmic electrode, and semiconductor device A semiconductor device having a single substrate made of silicon carbide; an epitaxial film made of Alx Iny Ga.sub.(1-x-y) N which is selectively formed on the single substrate; an amplifier section including a gate formed on the sin...	08/14/2001
6268655	Semiconductor device including edge bond pads and methods A vertically mountable semiconductor device including at least one bond pad disposed on an edge thereof. The bond pad includes a conductive bump disposed thereon. The semiconductor device may also include a protective overcoat layer. The present invention...	07/31/2001
6268642	Wafer level package A wafer level package structure. The method of forming the wafer level package structure includes covering a silicon chip having a plurality of integrated circuit devices thereon with an insulation layer. Next, a plurality of bonding pads is formed on the...	07/31/2001
6245653	Method of filling an opening in an insulating layer The present invention is about a method for filling an opening in an insulating layer in a fast and highly reliable way and can be used to fill openings such as trenches and via holes simultaneously. This method is based on the principle of reaction enhan...	06/12/2001
6034415	Lateral RF MOS device having a combined source structure A lateral RF MOS device having a combined source connection structure is disclosed. The combined source connection structure utilizes a diffusion area and a conductive plug region. In one embodiment, the diffusion source area forms a contact region connec...	03/07/2000
5986331	Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate A microwave monolithic integrated circuit includes a coplanar waveguide (CPW) formed by a composite silicon structure constituted by a relatively high resistivity substrate, a first oxide layer on the upper surface thereof, a relatively thin silicon layer...	11/16/1999
5977604	Buried layer in a semiconductor formed by bonding Buried layers are formed within a semiconductor. Metallic or insulating buried layers are produced several microns within a semiconductor substrate. The buried layer can confine current to the buried layer itself by using a conductive material to create t...	11/02/1999
5793055	Hybrid electronic devices, particularly Josephson transistors A step junction is provided for superconductor/semiconductor heterostructure hybrid devices like tunneling transistors, in a body of p-InAs with a vertical side connecting the low plateau and high plateau on which superconductors, preferably of niobium, a...	08/11/1998
5668401	Chessboard pattern layout for scribe lines A process has been developed in which photoresist thinning at the edges of silicon chips, resulting from photoresist flowing from semiconductor chips, exhibiting features with raised topographies, to flat scribe regions, has been reduced. The reduction in...	09/16/1997
5640043	High voltage silicon diode with optimum placement of silicon-germanium layers A high voltage silicon rectifier includes a substrate portion and an epitaxial mesa portion that is a frustrum of a pyramid with a substantially square cross section and side walls that make a forty five degree angle with the substrate portion. The mesa p...	06/17/1997
5525818	Reducing extrinsic base-collector capacitance This is a method of fabricating a heterojunction bipolar transistor on a wafer. The method can comprise: forming a doped subcollector layer 31 on a semi-conducting substrate 30; forming a doped collector layer 32 on top of the collector layer, the collect...	06/11/1996

«First «Previous1 2 Next»Last»

PatentStorm

Quotables

PatentStorm News

Class 257/624 - With low resistance ohmic connection means along exposed mesa edge (e.g., contact or heavily doped region along exposed mesa to reduce "skin effect" losses in microwave diode)