Did You Know...
...that two musicians were responsible for the invention of color print film? Fascinated by photography, Leopold Godowsky and Leopold Mannes worked together to produce an easy-to-use, practical color film. They worked full time as music teachers and gave concerts while experimenting during their off hours in Mannes' kitchen. Their success earned them full-time, well-paying jobs at Kodak and their efforts resulted in Kodachrome film, which was introduced in 1935.
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| Number | Title | Issue Date |
| 8159050 | Single crystal silicon structures A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the ... | 04/17/2012 |
| 8110901 | Vertical field effect transistor arrays including gate electrodes annularly surrounding semiconductor pillars Vertical field effect transistor semiconductor structures and methods for fabrication of the vertical field effect transistor semiconductor structures provide an array of semiconductor pillars. Each vertical portion of each semiconductor pillar in the array of semic... | 02/07/2012 |
| 8035199 | Semiconductor device and method for manufacturing the same A semiconductor device has a semiconductor substrate, a semiconductor fin which is formed on the semiconductor substrate, which has a long side direction and a short side direction, and which has a carbon-containing silicon film including an impurity and a silicon f... | 10/11/2011 |
| 8013426 | Transistor having raised source/drain self-aligned contacts and method of forming same A transistor structure and a method of forming same. The transistor structure includes: a semiconductor substrate having a gate-side surface; a gate disposed on the gate-side surface, the gate extending above the gate-side surface by a first height; a semiconductor ... | 09/06/2011 |
| 7973389 | Isolated tri-gate transistor fabricated on bulk substrate A method of forming an isolated tri-gate semiconductor body comprises patterning a bulk substrate to form a fin structure, depositing an insulating material around the fin structure, recessing the insulating material to expose a portion of the fin structure that wil... | 07/05/2011 |
| 7973388 | Semiconductor structures including square cuts in single crystal silicon A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in t... | 07/05/2011 |
| 7952172 | Semiconductor optical element A light receiving element 1 has a semiconductor substrate 101; a first mesa 11 provided over the semiconductor substrate 101, and having an active region and a first electrode (p-side electrode 111) provided over the active region;... | 05/31/2011 |
| 7911036 | Semiconductor wafer with rear side identification and method A semiconductor wafer with rear side identification and to a method for producing the same is disclosed. In one embodiment, the rear side identification has a multiplicity of information regarding the monocrystalline and surface and also rear side constitution. A mu... | 03/22/2011 |
| 7863711 | Semiconductor wafer and method for cutting the same A semiconductor wafer and a method for cutting the same are provided, which enable separation of the semiconductor wafer by natural cleavage planes. The cutting method includes preparing a substrate including a semiconductor layer with at least one projection, forme... | 01/04/2011 |
| 7855438 | Deep via construction for a semiconductor device An integrated circuit semiconductor device includes a substrate, a deep via within the substrate which is provided with a dielectric cladding in contact with the substrate, metal fill located within the deep via and defining an upper surface, interconnect wiring, an... | 12/21/2010 |
| 7800201 | Thinned wafer having stress dispersion parts and method for manufacturing semiconductor package using the same A thinned wafer having stress dispersion parts that make the wafer resistant to warpage and a method for manufacturing a semiconductor package using the same is described. The wafer includes a wafer body having a semiconductor chip forming zone and a peripheral zone... | 09/21/2010 |
| 7772677 | Semiconductor device and method of forming the same having a junction termination structure with a beveled sidewall A semiconductor device has a semiconductor substrate including an n-type high impurity concentration layer inhibiting a depletion layer from spreading, an n-type low impurity concentration drift layer, and a p-type high impurity concentration layer forming a p-n mai... | 08/10/2010 |
| 7755171 | Transistor structure with recessed source/drain and buried etch stop layer and related method A transistor structure having a recessed source/drain and buried etch stop layer (e.g., a silicon germanium layer), and a related method, are disclosed. In one embodiment, the transistor structure includes a substrate including a substantially trapezoidal silicon pe... | 07/13/2010 |
| 7667299 | Circuit board and method for mounting chip component A circuit board includes a substrate including electrode patterns formed thereon, first chip components mounted on the substrate and a second chip component mounted on a side of electrodes of the first chip components opposite from the substrate. The second chip com... | 02/23/2010 |
| 7612433 | Semiconductor device having self-aligned contact A method of manufacturing semiconductor devices having self-aligned contacts is provided. Multiple isolation structures are formed on the substrate to define an active area. Multiple gate structures are formed on the substrate. Multiple doped areas are formed in the... | 11/03/2009 |
| 7538413 | Semiconductor components having through interconnects A semiconductor component includes a semiconductor substrate having a substrate contact on a circuit side thereof in electrical communication with an integrated circuit, and a through interconnect in physical and electrical contact with the substrate contact configu... | 05/26/2009 |
| 7432539 | Imaging method utilizing thyristor-based pixel elements An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each thyristor-based pixel element includes complementary n-type and p-ty... | 10/07/2008 |
| 7408241 | Semiconductor device with a recessed bond pad A semiconductor device with surface-mountable outer contacts and to a process for producing it is disclosed. In one embodiment, surface-mountable outer contacts are arranged on outer contact connection surfaces on the underside of the semiconductor device. In their ... | 08/05/2008 |
| 7402837 | Light emitting devices with self aligned ohmic contacts Methods of fabricating light emitting diodes and light emitting devices are provided that include a substrate, an n-type epitaxial region on the substrate and a p-type epitaxial region on the n-type epitaxial region. At least a portion of the p-type epitaxial region... | 07/22/2008 |
| 7378707 | Scalable high density non-volatile memory cells in a contactless memory array A plurality of mesas are formed in the substrate. Each pair of mesas forms a trench. A plurality of diffusion areas are formed in the substrate. A mesa diffusion area is formed in each mesa top and a trench diffusion area is formed under each trench. A vertical, non... | 05/27/2008 |
| 7366015 | Semiconductor integrated circuit device, production and operation method thereof A semiconductor integrated device having a plurality of memory cells, each including a floating gate, a control gate and an auxiliary gate formed over a side surface of the floating gate through an insulator film. Auxiliary gates coupled to selected memory cells fun... | 04/29/2008 |
| 7361973 | Embedded stressed nitride liners for CMOS performance improvement The present invention provides a semiconducting device including a gate region positioned on a mesa portion of a substrate; and a nitride liner positioned on the gate region and recessed surfaces of the substrate adjacent to the gate region, the nitride liner provid... | 04/22/2008 |
| 7358594 | Method of forming a low k polymer E-beam printable mechanical support A low-k interconnect dielectric layer is strengthened by forming pillars of hardened material in the low-k film. An E-beam source is used to expose a plurality of pillar locations. The locations are exposed with a predetermined power and exposure time to convert the... | 04/15/2008 |
| 7354799 | Methods for anchoring a seal ring to a substrate using vias and assemblies including an anchored seal ring Disclosed are embodiments of a method for forming a seal ring on a substrate that is anchored to the substrate by a number of vias. Also disclosed are embodiments of an assembly including such an anchored seal ring. In some embodiments, a seal ring may extend around... | 04/08/2008 |
| 7348641 | Structure and method of making double-gated self-aligned finFET having gates of different lengths A gated semiconductor device is provided, in which the body has a first dimension extending in a lateral direction parallel to a major surface of a substrate, and second dimension extending in a direction at least substantially vertical and at least substantially pe... | 03/25/2008 |
| 7348642 | Fin-type field effect transistor Disclosed herein are improved fin-type field effect transistor (FinFET) structures and the associated methods of manufacturing the structures. In one embodiment FinFET drive current is optimized by configuring the FinFET asymmetrically to decrease fin resistance bet... | 03/25/2008 |
| 7339273 | Semiconductor device with a via hole having a diameter at the surface larger than a width of a pad electrode The invention is directed to a semiconductor device having a penetrating electrode and a manufacturing method thereof in which reliability and a yield of the semiconductor device are enhanced. A semiconductor substrate is etched to form a via hole from a back surfac... | 03/04/2008 |
| 7335593 | Method of fabricating semiconductor device A gate metal is formed in a film, the foregoing gate metal is partially etched per each TFT having a different property, and a gate electrode is fabricated. Specifically, a resist mask is fabricated by exposing a resist to light per each TFT having a different prope... | 02/26/2008 |
| 7335942 | Field effect transistor sensor The invention relates to a sensor, especially for the probe of a screen probe microscope, for examining probe surfaces (40) or areas adjacent to the sensor, comprising at least one field effect transistor (FET) made of at least one semiconductor material. The... | 02/26/2008 |
| 7325299 | Method of making a circuitized substrate A method of making a circuitized substrate. A conductive layer having a substantially planar upper surface is formed on and in direct mechanical contact with an upper surface of a substrate. A portion of the conductive layer is removed to form an interim side wall i... | 02/05/2008 |
| 7319248 | High brightness light emitting diode The present invention discloses a high brightness light emitting diode. The light emitting diode primarily includes a permanent substrate, a reflective mirror formed on said permanent substrate, an n-type cladding layer formed on said reflective mirror, and defining... | 01/15/2008 |
| 7310267 | NAND flash memory device and method of manufacturing and operating the same A NAND flash memory device, and more particularly, to NAND flash memory device and method of manufacturing operating the same as described. A dielectric film and a conduction layer are formed between cell gates so that between-cell gates are buried. Therefore, an in... | 12/18/2007 |
| 7301210 | Method and structure to process thick and thin fins and variable fin to fin spacing Disclosed is an integrated circuit with multiple semiconductor fins having different widths and variable spacing on the same substrate. The method of forming the circuit incorporates a sidewall image transfer process using different types of mandrels. Fin thickness ... | 11/27/2007 |
| 7294908 | Method of forming a gate pattern in a semiconductor device A gate pattern having a critical dimension after an etching process of 60-70nm may be formed using an ArF photoresist as an etching mask by a method including sequentially forming a gate oxide layer, a gate electrode layer, an anti-reflection coating layer, and an A... | 11/13/2007 |
| 7288828 | Metal oxide semiconductor transistor device A metal-oxide-semiconductor (MOS) transistor device is provided. The MOS transistor device includes a substrate, a gate structure, a spacer, a source/drain region and a barrier layer. The gate structure is disposed on the substrate. The gate structure includes a gat... | 10/30/2007 |
| 7282753 | Vertical conducting power semiconducting devices made by deep reactive ion etching The Invention Is A Method For Making Power Device On A Semiconductor Wafer, Where The Backside Of The Wafer Has Been Thinned In Selected Regions To A Thickness Of About 25 Um By Reactive Ion Etching. ... | 10/16/2007 |
| 7282392 | Method of fabricating a stacked die in die BGA package Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided. ... | 10/16/2007 |
| 7276763 | Structure and method for forming the gate electrode in a multiple-gate transistor In a method of forming semiconductor device, a semiconductor fin is formed on a semiconductor-on-insulator substrate. A gate dielectric is formed over at least a portion of the semiconductor fin. A first gate electrode material is formed over the gate dielectric and... | 10/02/2007 |
| 7262435 | Single-transverse-mode laser diode with multi-mode waveguide region and manufacturing method of the same A laser diode with a single-transverse-mode output having a laser cavity comprising both single-mode and multi-mode waveguide portions, and a method of manufacturing such a laser diode are disclosed. There are a pair of single transverse waveguide regions at opposit... | 08/28/2007 |
| 7256433 | Bipolar transistor and a method of manufacturing the same A bipolar transistor having enhanced characteristics is fabricated by etching a base mesa, which is formed below an emitter mesa (upper emitter layer) and a base electrode, so as to have jut regions on the edges of its generally rectangular region. A mask film, e.g.... | 08/14/2007 |
