Did You Know...
...that after Parker Brothers executives turned down the game of Monopoly because it had "52 fundamental errors" (including taking too long to play), a copy of the game wound up in the home of the company president who stayed up until 1 a.m. to finish playing it? He was so impressed by the game that the next day he wrote to inventor Charles Darrow and offered to buy it!
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| Number | Title | Issue Date |
| 8178950 | Multilayered through a via A method for forming a through substrate via (TSV) comprises forming an opening within a substrate. An adhesion layer of titanium is formed within the via opening, a nucleation layer of titanium nitride is formed over the adhesion layer, and a tungsten layer is depo... | 05/15/2012 |
| 8174093 | Multichip semiconductor device, chip therefor and method of formation thereof A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the c... | 05/08/2012 |
| 8169054 | Semiconductor device and method of manufacturing the same The invention is directed to a semiconductor device having a via hole and a method of manufacturing the same that achieve both the prevention of a barrier layer insufficiently covering the via hole and the control of via resistance at the same time. A semiconductor ... | 05/01/2012 |
| 8169055 | Chip guard ring including a through-substrate via At least one through-substrate via is formed around the periphery of a semiconductor chip or a semiconductor chiplet included in a semiconductor chip. The at least one through-substrate via may be a single through-substrate via that laterally surrounds the semicondu... | 05/01/2012 |
| 8164165 | Wafer-to-wafer stack with supporting pedestal A novel three dimensional wafer stack and the manufacturing method therefor are provided. The three dimensional wafer stack includes a first wafer having a first substrate and a first device layer having thereon at least one chip, a second wafer disposed above the f... | 04/24/2012 |
| 8159049 | Semiconductor structure for imaging detectors There is disclosed a photo-detector array including a plurality of sub-arrays of photo-detectors, the photo-detectors of each sub-array being formed on a substrate with an active area of each photo-detector being formed on a surface of the substrate, there further b... | 04/17/2012 |
| 8154105 | Flip chip semiconductor device and process of its manufacture A semiconductor die and method of making it are provided. The die includes a first via extending through the entire thickness of the die and a first via electrode disposed inside the via electrically connecting an electrode at a top surface of the die with another e... | 04/10/2012 |
| 8143704 | Electronic assemblies including mechanically secured protruding bonding conductor joints An electronic assembly includes an IC die including a semiconductor top surface having active circuitry thereon and a bottom surface, and at least one protruding bonding feature having sidewall surfaces and a leading edge surface extending outward from the IC die. A... | 03/27/2012 |
| 8143705 | Tamper-resistant semiconductor device and methods of manufacturing thereof The invention relates to a tamper-resistant semiconductor device comprising a substrate (5) comprising an electronic circuit arranged on a first side thereof. An electrically-conductive protection layer (50, 50a, 50b) is arranged o... | 03/27/2012 |
| 8138577 | Pulse-laser bonding method for through-silicon-via based stacking of electronic components There is described a method of forming a through-silicon-via to form an interconnect between two stacked semiconductor components using pulsed laser energy. A hole is formed in each component, and each hole is filled with a plug formed of a first metal. One componen... | 03/20/2012 |
| 8125055 | Packaging technology Metallized through silicon vias located in the scribe lanes between die are used to create an electrical connection between the front-side and the rear-side of a silicon die. One of the metallization layers on the front-side of the die comprises portions which exten... | 02/28/2012 |
| 8110900 | Manufacturing process of semiconductor device and semiconductor device After forming a ring-shaped trench penetrating through a semiconductor substrate from a rear surface side thereof and forming an insulating film inside the trench and on the rear surface of the semiconductor substrate, a through hole is formed in the insulating film... | 02/07/2012 |
| 8110899 | Method for incorporating existing silicon die into 3D integrated stack An apparatus including a first die including a plurality of conductive through substrate vias (TSVs); and a plurality of second dice each including a plurality of contact points coupled to the TSVs of the first die, the plurality of second dice arranged to collectiv... | 02/07/2012 |
| 8106484 | Silicon substrate for package In a silicon substrate for a package, a through electrode is provided with which a through hole passing through from a bottom surface of a cavity for accommodating a chip of an electronic device to a back surface of the substrate is filled. An end part of the throug... | 01/31/2012 |
| 8102029 | Wafer level buck converter A buck converter module includes a high side (HS) die having source, drain, and gate bonding pads on a front side of the HS die, a low side (LS) die having a first section thereof with a plurality of through silicon vias (TSVs) extending from a back side to a front ... | 01/24/2012 |
| 8072046 | Through-electrode, circuit board having a through-electrode, semiconductor package having a through-electrode, and stacked semiconductor package having the semiconductor chip or package having a through-electrode A stacked semiconductor package includes a first semiconductor package having a first semiconductor chip having a first pad and a through-hole passing through a the portion corresponding to the pad; a second semiconductor package disposed over the first semiconducto... | 12/06/2011 |
| 8058707 | Semiconductor devices having redundant through-die vias and methods of fabricating the same Semiconductor devices having redundant through-die vias (TDVs) and methods of fabricating the same are described. A substrate is provided having conductive interconnect formed on an active side thereof. Through die vias (TDVs) are formed in the substrate between a b... | 11/15/2011 |
| 8058708 | Through hole interconnection structure for semiconductor wafer A through-hole interconnection structure for a semiconductor wafer, in which: the each wafer includes at least a first wafer and a second wafer electrically connected to the first wafer; an electrical signal connecting section of the second wafer is provided to prot... | 11/15/2011 |
| 8049310 | Semiconductor device with an interconnect element and method for manufacture A semiconductor device is provided configured to be electrically connected to another device by through silicon interconnect technology. The semiconductor device includes a semiconductor substrate with at least one through hole. A through silicon conductor extends i... | 11/01/2011 |
| 8039928 | Chip stack package A chip stack package includes a plurality of chips that are stacked by using adhesive layers as intermediary media, and a through via electrode formed through the chips to electrically couple the chips. The through via electrode is classified as a power supply throu... | 10/18/2011 |
| 8035198 | Through wafer via and method of making same A through wafer via structure. The structure includes: a semiconductor substrate having a top surface and an opposite bottom surface; and an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically n... | 10/11/2011 |
| 8030739 | Semiconductor package having chip selection through electrodes and stacked semiconductor package having the same A stacked semiconductor package includes a plurality of stacked semiconductor chips each having a circuit unit, a data pad, and a chip selection pad. The plurality of stacked semiconductor chips also includes a plurality of chip selection through electrodes. The chi... | 10/04/2011 |
| 8026577 | Semiconductor apparatus having a triple well structure and manfacturing method thereof A semiconductor apparatus according to the present invention includes a first well-region and a second well-region in a semiconductor substrate, and a plurality of transistors formed to the second well-region. Further, the semiconductor apparatus includes a through-... | 09/27/2011 |
| 8018031 | MOS transistors formed on the front and back surface of a semiconductor substrate The invention realizes low on-resistance and high current flow in a semiconductor device in which a current flows in a thickness direction of a semiconductor substrate. A first MOS transistor having first gate electrodes and first source layers is formed on a front ... | 09/13/2011 |
| 7999354 | Resin composition, filling material, insulating layer and semiconductor device A resin composition of the present invention is used for forming a filling material which fills at least a through-hole of a semiconductor substrate, the through-hole extending through the semiconductor substrate in a thickness direction thereof and having a conduct... | 08/16/2011 |
| 7989927 | Silicon substrate for package In a silicon substrate for a package, a through electrode is provided with which a through hole passing through from a bottom surface of a cavity for accommodating a chip of an electronic device to a back surface of the substrate is filled. An end part of the throug... | 08/02/2011 |
| 7968975 | Metal wiring structure for integration with through substrate vias An array of through substrate vias (TSVs) is formed through a semiconductor substrate and a contact-via-level dielectric layer thereupon. A metal-wire-level dielectric layer and a line-level metal wiring structure embedded therein are formed directly on the contact-... | 06/28/2011 |
| 7956443 | Through-wafer interconnects for photoimager and memory wafers A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Fu... | 06/07/2011 |
| 7956442 | Backside connection to TSVs having redistribution lines An integrated circuit structure includes a semiconductor substrate including a front side and a backside. A through-silicon via (TSV) penetrates the semiconductor substrate, and has a back end extending to the backside of the semiconductor substrate. A redistributio... | 06/07/2011 |
| 7952171 | Die stacking with an annular via having a recessed socket A die stack including a die having an annular via with a recessed conductive socket and methods of forming the die stack provide a structure for use in a variety of electronic systems. In an embodiment, a die stack includes a conductive pillar on the top of a die in... | 05/31/2011 |
| 7952170 | System including semiconductor components having through interconnects and back side redistribution conductors A system includes a supporting substrate and at least one semiconductor substrate. The semiconductor component includes a semiconductor substrate having a circuit side with integrated circuits and substrate contacts and a back side, a plurality of through interconne... | 05/31/2011 |
| 7939914 | Dual wired integrated circuit chips A semiconductor device having wiring levels on opposite sides and a method of fabricating a semiconductor structure having contacts to devices and wiring levels on opposite sides. The method including fabricating a device on a silicon-on-insulator substrate with fir... | 05/10/2011 |
| 7936048 | Power transistor and power semiconductor device In a power semiconductor device, the vertically conducting power transistor has at its front side (11) a source zone (14) and a control input (16). A feedthrough for the control input has an electrode on the front side (11) and an electro... | 05/03/2011 |
| 7932584 | Stacked chip-based system and method A system has multiple discrete functional system subcomponents which, when interconnected form the system, each of the subcomponents being on a discrete substrate and being electrically interconnected to at least one of the other subcomponents by a through-chip via.... | 04/26/2011 |
| 7928534 | Bond pad connection to redistribution lines having tapered profiles An integrated circuit structure includes a semiconductor substrate having a front side and a backside. A through-silicon via (TSV) penetrates the semiconductor substrate, wherein the TSV has a back end extending to the backside of the semiconductor substrate. A redi... | 04/19/2011 |
| 7919834 | Edge seal for thru-silicon-via technology One or more multilayer back side metallurgy (BSM) stack structures are formed on thru-silicon-vias (TSV). The multiple layers of metal may include an adhesion layer of chromium on the semiconductor wafer back side, a conductive layer of copper, diffusion barrier lay... | 04/05/2011 |
| 7919835 | Semiconductor device and method for manufacturing the same The present invention provides a semiconductor device having a low-k film including an interconnect layer and a highly-reliable through-substrate contact plug. The semiconductor device includes: a semiconductor substrate having a f... | 04/05/2011 |
| 7915710 | Method of fabricating a semiconductor device, and semiconductor device with a conductive member extending through a substrate and connected to a metal pattern bonded to the substrate A method of fabricating a semiconductor device includes providing a semiconductor substrate having an active surface, thinning the substrate by removing material from a second surface of the substrate opposite the active surface, bonding a metal carrier to the secon... | 03/29/2011 |
| 7915711 | Semiconductor assemblies and methods of manufacturing such assemblies including trenches in a molding material between semiconductor die Semiconductor devices and assemblies including interconnects and methods for forming such interconnects are disclosed herein. One embodiment of a method of manufacturing a semiconductor device includes forming a plurality of first side trenches to an intermediate de... | 03/29/2011 |
| 7898063 | Through substrate annular via including plug filler A through substrate via includes an annular conductor layer at a periphery of a through substrate aperture, and a plug layer surrounded by the annular conductor layer. A method for fabricating the through substrate via includes forming a blind aperture within a subs... | 03/01/2011 |
