Bizarre Patents
Mouse device with a built-in printer
A mouse device for use as an input device of a computer is provided that includes a housing in which recording paper is loadable, and a printer unit provided within the housing for printing on the recording paper print information received from the computer.
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| Number | Title | Issue Date |
| 8421191 | Monolayer dopant embedded stressor for advanced CMOS Semiconductor structures are disclosed that include at least one FET gate stack located on a semiconductor substrate. The at least one FET gate stack includes source and drain extension regions located within the semiconductor substrate. A device channel is also pre... | 04/16/2013 |
| 8304859 | Optical interconnection device Provided is an optical interconnection device. The optical interconnection device include: a first semiconductor chip disposed on a germanium-on-insulator (GOI) substrate; a light emitter on the GOI substrate, the light emitter receiving an electrical signal from th... | 11/06/2012 |
| 8129821 | Reacted conductive gate electrodes A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal... | 03/06/2012 |
| 8039926 | Method for manufacturing N-type and P-type chalcogenide material, doped homojunction chalcogenide thin film transistor and method of fabricating the same The present invention provides a doped homojunction chalcogenide thin film transistor and a method of fabricating the same, comprising forming an N-type chalcogenide layer constituting a channel layer on a substrate, forming and patterning a diffusion prevention lay... | 10/18/2011 |
| 7944024 | Semiconductor device and manufacturing method of the same A semiconductor device is provided which is capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate... | 05/17/2011 |
| 7944023 | Strained Si formed by anneal A semiconductor structure includes a silicon substrate layer, a relaxed silicon-germanium layer on the silicon substrate layer and a strained single crystal silicon layer on the silicon-germanium layer. The silicon-germanium layer may include a thickness of 500 angs... | 05/17/2011 |
| 7868425 | Semiconductor device and manufacturing method of the same Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type... | 01/11/2011 |
| 7825493 | Field-effect transistor and method for fabricating the same A field-effect transistor that increases the operation speeds of complementary field-effect transistors. Each of an nMOSFET and a pMODFET has a Ge channel and source and drain regions formed of an NiGe layer. The height of Schottky barriers formed at a junction betw... | 11/02/2010 |
| 7816767 | Negative differential resistance diode and SRAM utilizing such device A negative differential resistance (NDR) diode and a memory cell incorporating that NDR diode are provided. The NDR diode comprises a p-type germanium region in contact with an n-type germanium region and forming a germanium pn junction diode. A first gate electrode... | 10/19/2010 |
| 7816766 | Semiconductor device with compressive and tensile stresses A semiconductor device includes a gate electrode formed on a silicon substrate in correspondence to a channel region via a gate insulation film, and source and drain regions of p-type formed in the silicon substrate at respective outer sides of sidewall insulation f... | 10/19/2010 |
| 7808081 | Strained-silicon CMOS device and method The present invention provides a semiconductor device and a method of forming thereof, in which a uniaxial strain is produced in the device channel of the semiconductor device. The uniaxial strain may be in tension or in compression and is in a direction parallel to... | 10/05/2010 |
| 7772676 | Strained semiconductor device and method of making same A semiconductor body is formed from a first semiconductor material, e.g., silicon. A compound semiconductor region, e.g., silicon germanium, is embedded in the semiconductor body. The compound semiconductor region includes the first semiconductor material and a seco... | 08/10/2010 |
| 7545023 | Semiconductor transistor A semiconductor transistor includes a substrate, a gate insulating layer positioned on the surface of the substrate, a gate positioned on the gate insulating layer, a channel region positioned in the substrate corresponding to the gate, and a source region and a dra... | 06/09/2009 |
| 7508050 | Negative differential resistance diode and SRAM utilizing such device A negative differential resistance (NDR) diode and a memory cell incorporating that NDR diode are provided. The NDR diode comprises a p-type germanium region in contact with an n-type germanium region and forming a germanium pn junction diode. A first gate electrode... | 03/24/2009 |
| 7446393 | Co-sputter deposition of metal-doped chalcogenides The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GexSe1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to d... | 11/04/2008 |
| 7442993 | Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer A method of forming a semiconductor structure comprising a first strained semiconductor layer over an insulating layer is provided in which the first strained semiconductor layer is relatively thin (less than about 500 Å) and has a low defect density (stacking fau... | 10/28/2008 |
| 7436035 | Method of fabricating a field effect transistor structure with abrupt source/drain junctions Microelectronic structures embodying the present invention include a field effect transistor (FET) having highly conductive source/drain extensions. Formation of such highly conductive source/drain extensions includes forming a passivated recess which is back filled... | 10/14/2008 |
| 7436046 | Semiconductor device and manufacturing method of the same Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type... | 10/14/2008 |
| 7432559 | Silicide formation on SiGe A semiconductor structure includes a first silicon-containing layer comprising an element selected from the group consisting essentially of carbon and germanium wherein the silicon-containing layer has a first atomic percentage of the element to the element and sili... | 10/07/2008 |
| 7416957 | Method for forming a strained Si-channel in a MOSFET structure Method for forming a strained Si layer on a substrate (1), including formation of: an epitaxial SiGe layer (4) on a Si surface, and of: the strained Si layer by epitaxial growth of the Si layer on top of the epitaxial SiGe layer (4), the Si laye... | 08/26/2008 |
| 7405465 | Deposited semiconductor structure to minimize n-type dopant diffusion and method of making In deposited silicon, n-type dopants such as phosphorus and arsenic tend to seek the surface of the silicon, rising as the layer is deposited. When a second undoped or p-doped silicon layer is deposited on n-doped silicon with no n-type dopant provided, a first thic... | 07/29/2008 |
| 7402891 | Semiconductor polymers, method for the production thereof and an optoelectronic component Layered germanium polymers that are semiconductive and demonstrate a strong red or infrared luminescence are produced through the topochemical conversion of calcium digermanide. Furthermore, silicon/germanium layer polymers can also be produced in this manner. These... | 07/22/2008 |
| 7397101 | Germanium silicon heterostructure photodetectors A horizontal germanium silicon heterostructure photodetector comprising a horizontal germanium p-i-n diode disposed over a horizontal parasitic silicon p-i-n diode uses silicon contacts for electrically coupling to the germanium p-i-n through the p-type doped and n-... | 07/08/2008 |
| 7393735 | Structure for and method of fabricating a high-mobility field-effect transistor A structure and method of fabricating a high-mobility semiconductor layer structure and field-effect transistor (MODFET) that includes a high-mobility conducting channel, while at the same time, maintaining counter doping to control deleterious short-channel effects... | 07/01/2008 |
| 7391098 | Semiconductor substrate, semiconductor device and method of manufacturing the same The present invention relates to a semiconductor substrate, a semiconductor device with high carrier mobility and a method of manufacturing the same. According to the present invention, there are provided a semiconductor substrate comprising a silicon substrate, a s... | 06/24/2008 |
| 7368335 | Semiconductor device and method of manufacturing the same The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor devic... | 05/06/2008 |
| 7365410 | Semiconductor structure having a metallic buffer layer and method for forming A method for forming a semiconductor structure including providing a semiconductor substrate, forming a metallic buffer layer over the semiconductor substrate, forming an amorphous semiconductor layer over the metallic buffer layer, and recrystallizing the amorphous... | 04/29/2008 |
| 7365362 | Semiconductor device and method of fabricating semiconductor device using oxidation According to one aspect of the invention, there is provided a semiconductor device fabrication method comprising: forming a gate insulating film on a semiconductor substrate; forming a film containing a predetermin... | 04/29/2008 |
| 7361541 | Programming optical device A semiconductor light emitting device and a method to form the same are disclosed. The device has at least one porous or low density dielectric region formed in or on top of a bottom electrode, at least one top electrode on the porous or low density dielectric regio... | 04/22/2008 |
| 7358571 | Isolation spacer for thin SOI devices A semiconductor device comprises a semiconductor mesa overlying a dielectric layer, a gate stack formed overlying the semiconductor mesa, and an isolation spacer formed surrounding the semiconductor mesa and filling any undercut region at edges of the semiconductor ... | 04/15/2008 |
| 7355214 | Field effect transistor and fabrication thereof, semiconductor device and fabrication thereof, logic circuit including the semiconductor device, and semiconductor substrate A method for forming a Field Effect Transistor (FET) within a strain effect semiconductor layer is disclosed, whereby the source and drain of the FET are formed only in the strain effect silicon layer. The FET may be formed as a gate electrode of a p-channel type fi... | 04/08/2008 |
| 7348253 | High-quality SGOI by annealing near the alloy melting point A method of forming a low-defect, substantially relaxed SiGe-on-insulator substrate material is provided. The method includes first forming a Ge-containing layer on a surface of a first single crystal Si layer which is present atop a barrier layer that is resistant ... | 03/25/2008 |
| 7348186 | Method for improving a semiconductor substrate having SiGe film and semiconductor device manufactured by using this method A method of improving a semiconductor substrate including a SiGe film on a Si or SOI substrate is provided. The method includes determining a relationship between a film condition of the SiGe film and a hydrogen ion implantation condition used in making the SiGe fil... | 03/25/2008 |
| 7338876 | Method for manufacturing a semiconductor device A method for forming a semiconductor memory device includes the steps of: implanting a dopant in a semiconductor substrate; heat treating the semiconductor substrate in an oxidizing ambient to diffuse the dopant for forming diffused regions in the semiconductor subs... | 03/04/2008 |
| 7338834 | Strained silicon with elastic edge relaxation A thin blanket epitaxial layer of SiGe is grown on a silicon substrate to have a biaxial compressive stress in the growth plane. A thin epitaxial layer of silicon is deposited on the SiGe layer, with the SiGe layer having a thickness less than its critical thickness... | 03/04/2008 |
| 7335929 | Transistor with a strained region and method of manufacture A transistor structure comprises a channel region overlying a substrate region. The substrate region comprises a first semiconductor material with a first lattice constant. The channel region comprises a second semiconductor material with a second lattice constant. ... | 02/26/2008 |
| 7329923 | High-performance CMOS devices on hybrid crystal oriented substrates An integrated semiconductor structure containing at least one device formed upon a first crystallographic surface that is optimal for that device, while another device is formed upon a second different crystallographic surface that is optimal for the other device is... | 02/12/2008 |
| 7326619 | Method of manufacturing integrated circuit device including recessed channel transistor A method according to some embodiments of the invention includes defining an active region by forming a trench device isolation region on an integrated substrate, forming a mask pattern that exposes a channel sub-region of the active region and the trench device iso... | 02/05/2008 |
| 7326969 | Semiconductor device incorporating thyristor-based memory and strained silicon A semiconductor memory device may comprise a thyristor-based memory having some portions formed in strained silicon, and other portions formed in relaxed silicon. In a further embodiment, a thyristor in the thyristor-based memory may be formed in a region of relaxed... | 02/05/2008 |
| 7320931 | Interfacial layer for use with high k dielectric materials Methods and apparatus are provided for depositing a layer of pure germanium can on a silicon substrate. This germanium layer is very thin, on the order of about 14 Å, and is less than the critical thickness for pure germanium on silicon. The germanium layer serves... | 01/22/2008 |
