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| Number | Title | Issue Date |
| 8188573 | Nitride semiconductor structure A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes an epitaxy substrate, a nitride pillar layer, a nitride semiconductor layer, and a mask layer. The nitride pillar layer includes a pl... | 05/29/2012 |
| 8183668 | Gallium nitride substrate A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, and the substrate having a fracture toughness of more than or equal to 1.36 MN/m3/... | 05/22/2012 |
| 8183667 | Epitaxial growth of crystalline material A device includes an epitaxially grown crystalline material within an area confined by an insulator. A surface of the crystalline material has a reduced roughness. One example includes obtaining a surface with reduced roughness by creating process parameters which r... | 05/22/2012 |
| 8148801 | Nitride crystal with removable surface layer and methods of manufacture A nitride crystal or wafer with a removable surface layer comprises a high quality nitride base crystal, a release layer, and a high quality epitaxial layer. The release layer has a large optical absorption coefficient at wavelengths where the base crystal is substa... | 04/03/2012 |
| 8143702 | Group III-V nitride based semiconductor substrate and method of making same A group III-V nitride-based semiconductor substrate includes a group III-V nitride-based semiconductor crystal. A surface area of the substrate is greater than or equal to 45 cm2. A thickness of the substrate is greater than or equal to 200 μm. An in-pla... | 03/27/2012 |
| 8134223 | III-V compound crystal and semiconductor electronic circuit element Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates, and can be used to manufacture semiconductor devices with good quality and at high yields. The III-V crystals are characterized by the f... | 03/13/2012 |
| 8102026 | Group-III nitride semiconductor freestanding substrate and manufacturing method of the same To provide a group-III nitride semiconductor freestanding substrate, with carrier concentration of a peripheral part of a n-type group-III nitride semiconductor freestanding substrate set to be lower than the carrier concentration inside of the peripheral part. In t... | 01/24/2012 |
| 8093685 | Nitride compound semiconductor element A nitride compound semiconductor element according to the present invention is a nitride compound semiconductor element including a substrate 1 having an upper face and a lower face and a semiconductor multilayer structure 40 supported by the upper fac... | 01/10/2012 |
| 8093686 | Process for obtaining a hybrid substrate comprising at least one layer of a nitrided material A process for obtaining a hybrid substrate that includes at least one active layer of Group III/N material for applications in the field of electronics, optics, photovoltaics or optoelectronics. The method includes selecting a source substrate of Group III/N materia... | 01/10/2012 |
| 8058705 | Composite material substrate A composite material substrate having patterned structure includes a substrate, a first dielectric layer, a second dielectric layer, and a nitride semiconductor material. Herein, the first dielectric layer is stacked on the substrate, the second dielectric layer is ... | 11/15/2011 |
| 8044493 | GaAs semiconductor substrate for group III-V compound semiconductor device A GaAs semiconductor substrate includes a main surface (10m) having an inclined angle of 6° to 16° with respect to a (100) plane (10a), and a concentration of chlorine atoms on the main surface (10m) is not more tha... | 10/25/2011 |
| 8044492 | Compound semiconductor device including AIN layer of controlled skewness A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AN layer, wherein an interface between the AlN layer and nitride semi... | 10/25/2011 |
| 8018029 | Gallium nitride-based epitaxial wafer and method of fabricating epitaxial wafer A gallium nitride-based epitaxial wafer for a nitride light-emitting device comprises a gallium nitride substrate having a primary surface, a gallium nitride-based semiconductor film provided on the primary surface, and, an active layer provided on the semiconductor... | 09/13/2011 |
| 8008749 | Semiconductor device having vertical electrodes structure A semiconductor device is provided with a drain electrode 22, a semiconductor base plate 32, an electric current regulation layer 42 covering a part of a surface of the semiconductor base plate 32 and leaving a non-covered surface 55 | 08/30/2011 |
| 8004065 | Nitride semiconductor and method for manufacturing same A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and ... | 08/23/2011 |
| 7989926 | Semiconductor device including non-stoichiometric silicon carbide layer and method of fabrication thereof A semiconductor device includes a substrate formed of a single crystal. a silicon carbide layer disposed on a surface of the single crystal substrate and an intermediate layer disposed on a surface of the silicon carbide layer and formed of a Group III nitride semic... | 08/02/2011 |
| 7911035 | Directionally controlled growth of nanowhiskers Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substr... | 03/22/2011 |
| 7863710 | Dislocation removal from a group III-V film grown on a semiconductor substrate Dislocation removal from a group III-V film grown on a semiconductor substrate is generally described. In one example, an apparatus includes a semiconductor substrate, a buffer film including a group III-V semiconductor material epitaxially coupled to the semiconduc... | 01/04/2011 |
| 7843040 | Gallium nitride baseplate and epitaxial substrate A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate (1), such as a (0001)-cut sapphire substrate, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus (11).... | 11/30/2010 |
| 7834423 | Method of producing a nitride semiconductor device and nitride semiconductor device AlxInyGa1-x-yN (0≦x≦1; 0≦x≦1; 0≦x+y≦1) layered device chips are produced by the steps of preparing a defect position controlled substrate of AlxInyGa1-x-yN (0≦x≦1; 0≦y≦1; 0≦x+yâ‰... | 11/16/2010 |
| 7777303 | Semiconductor-nanocrystal/conjugated polymer thin films The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.... | 08/17/2010 |
| 7750440 | Semiconductor film and manufacturing method thereof, light receiving element using semiconductor film, electrophotographic photoreceptor, process cartridge, and image forming device There is provided: a semiconductor film formed on a base material, containing a group 13 element, nitrogen, and oxygen in an amount of about 15 atomic % or more; a manufacturing method thereof; a light receiving element using the semiconductor film; an electrophotog... | 07/06/2010 |
| 7622791 | III-V group nitride system semiconductor substrate A III-V group nitride system semiconductor substrate is of a III-V group nitride system single crystal. The III-V group nitride system semiconductor substrate has a flat surface, and a vector made by projecting on a surface of the substrate a normal vector of a low ... | 11/24/2009 |
| 7550821 | Nitride semiconductor device A nitride semiconductor device includes: a substrate; a nitride semiconductor layer formed on a main surface of the substrate and having a channel region through which electrons drift in a direction parallel to the main surface; and a plurality of first electrodes a... | 06/23/2009 |
| 7531889 | Epitaxial substrate and semiconductor element In a Schottky diode 11, a gallium nitride support base 13 includes a first surface 13a and a second surface 13b opposite from the first surface and has a carrier concentration exceeding 1×1018 cm−3. ... | 05/12/2009 |
| 7518216 | Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate 1, such as a sapphire substrate having the (0001) plane, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus 11 | 04/14/2009 |
| 7508049 | Semiconductor optical device A semiconductor optical device comprises a first conductive type III-V compound semiconductor layer, a second conductive type III-V compound semiconductor layer, and an active region. The first conductive type III-V compound semiconductor layer is provided on a subs... | 03/24/2009 |
| 7470972 | Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress A transistor may be formed of different layers of silicon germanium, a lowest layer having a graded germanium concentration and upper layers having constant germanium concentrations such that the lowest layer is of the form Si1-xGex. The highes... | 12/30/2008 |
| 7439609 | Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures An improved p-type gallium nitride-based semiconductor device is disclosed. The device includes a structure with at least one p-type Group III nitride layer that includes some gallium, a first silicon dioxide layer on the p-type layer, a layer of a Group II metal so... | 10/21/2008 |
| 7436045 | Gallium nitride-based semiconductor device A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride (GaN) compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the... | 10/14/2008 |
| 7429747 | Sb-based CMOS devices A group III-V material CMOS device may have NMOS and PMOS portions that are substantially the same through several of their layers. This may make the CMOS device easy to make and prevent coefficient of thermal expansion mismatches between the NMOS and PMOS portions.... | 09/30/2008 |
| 7420261 | Bulk nitride mono-crystal including substrate for epitaxy The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to... | 09/02/2008 |
| 7405096 | Manufacturing method of nitride semiconductor device and nitride semiconductor device Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surfac... | 07/29/2008 |
| 7394114 | Semiconductor device and manufacturing method therefor A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserte... | 07/01/2008 |
| 7365366 | Boron phosphide-based semiconductor light-emitting device and production method thereof A boron phosphide-based semiconductor light-emitting device, comprising: a crystalline substrate; a first semiconductor layer formed on said crystalline substrate, said first semiconductor layer including a light-emitting layer, serving as a base layer and having a ... | 04/29/2008 |
| 7364929 | Nitride semiconductor based light-emitting device and manufacturing method thereof An object of the present invention is to provide a nitride semiconductor based light-emitting device, which is low in operating voltage reduction and is high in performance, and a manufacturing method thereof. A first metal film is formed on a P-type conducti... | 04/29/2008 |
| 7348200 | Method of growing non-polar a-plane gallium nitride The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the non-polar a-plane gallium nitri... | 03/25/2008 |
| 7339255 | Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the su... | 03/04/2008 |
| 7312472 | Compound semiconductor element based on Group III element nitride In the present invention, (Ti1−xAx)N [in which A is at least one kind of metal selected from the group consisting of Al, Ga, and In] is used as a metal nitride layer, so that a Group III nitride compound semiconductor layer is formed on the m... | 12/25/2007 |
| 7288830 | III-V nitride semiconductor substrate and its production method A self-supported III-V nitride semiconductor substrate having a substantially uniform carrier concentration distribution in a surface layer existing from a top surface to a depth of at least 10 μm is produced by growing a III-V nitride semiconductor crystal while f... | 10/30/2007 |
