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| Number | Title | Issue Date |
| 7875957 | Semiconductor substrate for epitaxial growth and manufacturing method thereof Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe system compound semiconductor substrate for the epitaxial growth of the Hg... | 01/25/2011 |
| 7612432 | P-type ZnS based semiconductor material having a low resistance due to its high copper content It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a semiconductor device and a semiconductor light emitting device which includ... | 11/03/2009 |
| 7495314 | Ohmic contact on p-type GaN An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer tha... | 02/24/2009 |
| 7358159 | Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by u... | 04/15/2008 |
| 7326950 | Memory device with switching glass layer A memory device, such as a PCRAM, including a chalcogenide glass backbone material with germanium telluride glass and methods of forming such a memory device. ... | 02/05/2008 |
| 7303631 | Selective growth of ZnO nanostructure using a patterned ALD ZnO seed layer Patterned zinc-oxide nanostructures are grown without using a metal catalyst by forming a seed layer of polycrystalline zinc oxide on a surface of a substrate. The seed layer can be formed by an atomic layer deposition technique. The seed layer is patterned, such as... | 12/04/2007 |
| 7288468 | Luminescent efficiency of semiconductor nanocrystals by surface treatment A method for improving the luminescent efficiency of semiconductor nanocrystals by surface treatment with a reducing agent to produce an improvement in luminescent efficiency and quantum efficiency without creating changes in the luminescent characteristics of the n... | 10/30/2007 |
| 7242041 | Field-effect transistors with weakly coupled layered inorganic semiconductors A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source ... | 07/10/2007 |
| 7230282 | III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer A III–V group nitride system semiconductor self-standing substrate has: a first III–V group nitride system semiconductor crystal layer that has a region with dislocation lines gathered densely, the dislocation lines being gathered substantially perpendicular to ... | 06/12/2007 |
| 7202503 | III-V and II-VI compounds as template materials for growing germanium containing film on silicon An assembly comprising a semiconductor substrate having a first lattice constant, an intermediate layer having a second lattice constant formed on the semiconductor substrate, and a virtual substrate layer having a third lattice constant formed on the intermediate l... | 04/10/2007 |
| 7151306 | Electronic part, and electronic part mounting element and an process for manufacturing such the articles A surface of an external electrode 3 of an electronic part 4 is formed with a coating containing resin ingredient. Thereby, adhesion strength and reliability may be significantly improved in mounting an electronic part onto a circuit board 1 thr... | 12/19/2006 |
| 7135727 | I-shaped and L-shaped contact structures and their fabrication methods Contact structures having I shapes and L shapes, and methods of fabricating I-shaped and L-shaped contact structures, are employed in semiconductor devices and, in certain instances, phase-change nonvolatile memory devices. The I-shaped and L-shaped contact structur... | 11/14/2006 |
| 7135696 | Phase change memory with damascene memory element A phase change material may be formed within a trench in a first layer to form a damascene memory element and in an overlying layer to form a threshold device. Below the first layer may be a wall heater. The wall heater that heats the overlying phase change material... | 11/14/2006 |
| 7129521 | Semiconductor device and manufacture method thereof The problem is to provide a technology to reduce a light leakage current in order to obtain a good display. One kind or plurality kinds of elements chosen from argon, germanium, silicon, helium, neon, krypton, and xenon are implanted in a crystalline semiconductor l... | 10/31/2006 |
| 7064346 | Transistor and semiconductor device In an npn-type transistor, the emitter 42 and the collector 43 are formed of an n-type transparent semiconductor, and the base 41 is formed by a p-type transparent semiconductor. The base electrode 44, the emitter electrode 45 and ... | 06/20/2006 |
| 7057202 | Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof An ultra-high density data storage device using phase-change diode memory cells, and having a plurality of emitters for directing beams of directed energy, a layer for forming multiple data storage cells and a layered diode structure for detecting a memory or data s... | 06/06/2006 |
| 6998697 | Non-volatile resistance variable devices A chalcogenide comprising material is formed to a first thickness over the first conductive electrode material. The chalcogenide material comprises AxBy. A metal comprising layer is formed to a second thickness over the chalcogenide material. T... | 02/14/2006 |
| 6975012 | Semiconductor radiation detector having voltage application means comprises InxCdyTez on CdTe semiconductor substrate Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crysta... | 12/13/2005 |
| 6951771 | Method of forming laminate and method of manufacturing photovoltaic device A method of forming a laminate and a method of manufacturing a photovoltaic device using the laminate are provided. The laminate forming method includes a first step of forming an intermediate layer on a base member, and a second step of forming a metal layer on the... | 10/04/2005 |
| 6878975 | Polarization field enhanced tunnel structures A novel tunnel structure is described that enables tunnel diode behavior to be exhibited even in material systems in which extremely heavy doping is impossible and only moderate or light doping levels may be achieved. In one aspect, the tunnel heterostructure includ... | 04/12/2005 |
| RE38582 | Semiconductor diode with suppression of auger generation processes A multi-layer Auger suppressed diode having at least two exclusion interfaces and at least two extraction interfaces. A specific embodiment has two composite contacts, each consisting of a heavily doped layer (3, 4) and a buffer layer (8, 9) of lower d... | 09/14/2004 |
| 6653664 | Bandgap engineering of tfel devices Bandgap engineering of thin-film electroluminescent (TFEL) devices increases their efficiency and brightness. An alternating current thin-film electroluminescent display has two stacked dielectrics, a semiconductor active layer therebetween, and metallic ... | 11/25/2003 |
| 6589447 | Compound semiconductor single crystal and fabrication process for compound semiconductor device Provided is a compound semiconductor single crystal and a fabrication process for a compound semiconductor device capable of forming a prescribed pattern without requirement of many steps. A group V element component in a III-V compound semiconductor sing... | 07/08/2003 |
| 6566700 | Carbon-containing interfacial layer for phase-change memory A phase-change memory cell may be formed with a carbon-containing interfacial layer that heats a phase-change material. By forming the phase-change material in contact, in one embodiment, with the carbon containing interfacial layer, the amount of heat th... | 05/20/2003 |
| 6541863 | Semiconductor device having a reduced signal processing time and a method of fabricating the same There is provided a semiconductor device comprising an insulating layer which is partly formed of porous material, and a method for fabricating the device. A stray capacitance of adjacent wiring lines is significantly reduced by reducing the amount of mat... | 04/01/2003 |
| 6452206 | Superlattice structures for use in thermoelectric devices A superlattice structure for thermoelectric power generation includes m monolayers of a first barrier material alternating with n monolayers of a second quantum well material with a pair of monolayers defining a superlattice period and each of the materia... | 09/17/2002 |
| 6420725 | Method and apparatus for forming an integrated circuit electrode having a reduced contact area A method and an apparatus for manufacturing a memory cell having a non-volatile resistive memory element with a limited size active area. The method comprises a first step of providing a dielectric volume and forming a plug opening within the dielectric v... | 07/16/2002 |
| 6376866 | GaN semiconductor light emitting device having a group II-VI substrate A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided. As a substrate on which gallium... | 04/23/2002 |
| 6359290 | Self-aligned bump bond infrared focal plane array architecture A method of making a diode and the diode wherein there is provided a substrate of p-type group II-VI semiconductor material and an electrically conductive material capable of forming an ohmic contact with the substrate is forced into the lattice of the su... | 03/19/2002 |
| 6333110 | Functionalized nanocrystals as visual tissue-specific imaging agents, and methods for fluorescence imaging Provided is a method of fluorescence imaging of living tissue using functionalized nanocrystals. The method comprises contacting an effective amount of functionalized nanocrystals with the living tissue; exposing the tissue to a spectrum of light suitable... | 12/25/2001 |
| 6319607 | Purification of functionalized fluorescent nanocrystals Provided are methods for purifying functionalized fluorescent nanocrystals having affinity ligand operably bound thereto by using a solid support matrix in a reactor through which solutions are circulated, and by using an immobilized solid phase formed by... | 11/20/2001 |
| 6312617 | Conductive isostructural compounds A family of isostructural compounds have been prepared having the general formula An Pbm Bin Q2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electr... | 11/06/2001 |
| 6309701 | Fluorescent nanocrystal-labeled microspheres for fluorescence analyses Provided are a fluorescent microsphere comprised of a plurality of fluorescent nanocrystals operably bound to a polymeric microsphere, and a method of producing the fluorescent microspheres which comprises contacting the polymeric microsphere with a plura... | 10/30/2001 |
| 6281521 | Silicon carbide horizontal channel buffered gate semiconductor devices Silicon carbide channel semiconductor devices are provided which eliminate the insulator of the gate by utilizing a semiconductor gate layer and buried base regions to create a "pinched off" gate region when no bias is applied to the gate. In particular e... | 08/28/2001 |
| 6274882 | Indium-based alloy and an infrared transducer using such an alloy The alloy is for making an infrared transducer. It is constituted by (In1-x Tlx) (As1-y Sby) in which 0ࣘx | 08/14/2001 |
| 6208005 | Mercury-based quaternary alloys of infrared sensitive materials A variable bandgap infrared absorbing material, Hg1-x Cdx Te, is manufactured by use of the process termed MOCVD-IMP (Metalorganic Chemical Vapor Deposition-Interdiffused Multilayer Process). A substantial reduction in the dislocatio... | 03/27/2001 |
| 6114038 | Functionalized nanocrystals and their use in detection systems Provided are compositions comprising water-soluble, functionalized nanocrystals. The water-soluble functionalized nanocrystals comprise quantum dots capped with a layer of a capping compound, and further comprise, by operably linking and in a successive m... | 09/05/2000 |
| 6081019 | Semiconductor diode with suppression of auger generation processes A multi-layer Auger suppressed diode having at least two exclusion interfaces and at least two extraction interfaces. A specific embodiment has two composite contacts, each consisting of a heavily doped layer (3, 4) and a buffer layer (8, 9) of lower dope... | 06/27/2000 |
| 6072198 | Electroluminescent alkaline-earth sulfide phosphor thin films with multiple coactivator dopants A light emitting phosphor having improved luminance is incorporated into an ACTFEL device having front and rear electrode sets, a pair of insulators sandwiched between the front and rear electrode sets, and a thin film electroluminescent laminar stack whi... | 06/06/2000 |
| 6069020 | Method of manufacturing semiconductor light-emitting device In a method of manufacturing a semiconductor light-emitting device composed of a II-VI compound semiconductor in which at least more than one kind of elements of Zn, Be, Mg, Cd or Hg are used as a II-group element and at least more than one kind of elemen... | 05/30/2000 |
