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| Number | Title | Issue Date |
| 8310027 | Electronic device and manufacturing method thereof Embodiments relate to a bipolar transistor that includes a body region having a fin structure. At least one terminal region may be formed over at least a portion of the body region. The at least one terminal region may be formed as an epitaxially grown region. Embod... | 11/13/2012 |
| 8294243 | Lateral bipolar transistor with compensated well regions Conduction between source and drain or emitter and collector regions is an important characteristic in transistor operation, particularly for lateral bipolar transistors. Accordingly, techniques that can facilitate control over this characteristic can mitigate yield... | 10/23/2012 |
| 7821102 | Power transistor featuring a double-sided feed design and method of making the same A power transistor (210) comprises a plurality of unit cell devices (212), a base contact configuration, an emitter contact configuration, and a collector contact configuration. The plurality of unit cell devices is arranged along an axis (194),... | 10/26/2010 |
| 7420228 | Bipolar transistor comprising carbon-doped semiconductor A bipolar transistor comprising a collector region of a first conduction type, and a subcollector region of the first conduction type at a first side of the collector region. The transistor further includes a base region of the second conduction type provided at a s... | 09/02/2008 |
| 7385254 | Structure for protection against radio disturbances A structure of protection of a first area of a semiconductor wafer including a substrate of a first conductivity type against high-frequency noise likely to be injected from components formed in the upper portion of a second area of the wafer, includes a very heavil... | 06/10/2008 |
| 7339276 | Underfilling process in a molded matrix array package using flow front modifying solder resist Placing a flow modifier on a package substrate to create two flow fronts on a molded matrix array package. A flow modifier may be laid on a package substrate to a height that blocks off the bottom of other substrates (e.g., dice) coupled to the package substrate. By... | 03/04/2008 |
| 7303968 | Semiconductor device and method having multiple subcollectors formed on a common wafer A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different characteristic and frequency response are provided. The subcollectors... | 12/04/2007 |
| 7268412 | Double polysilicon bipolar transistor A bipolar transistor with a substrate having a collector region and a base structure provided thereon. An emitter structure is formed over the base structure and an extrinsic base structure is formed over the base structure and over the collector region beside and s... | 09/11/2007 |
| 7226844 | Method of manufacturing a bipolar transistor with a single-crystal base contact A method forms a bipolar transistor in a semiconductor substrate of a first conductivity type. The method includes: forming on the substrate a single-crystal silicon-germanium layer; forming a heavily-doped single-crystal silicon layer of a second conductivity type;... | 06/05/2007 |
| 7217975 | Lateral type semiconductor device A lateral semiconductor device includes: a semiconductor substrate formed on a base region therein; a plurality of emitter regions with a triangle arrangement in an upper part of the base layer and collector regions surrounding the emitter regions, respectively, apa... | 05/15/2007 |
| 7179691 | Method for four direction low capacitance ESD protection The invention describes a structure and a process for providing ESD semiconductor protection with reduced input capacitance. The structure consists of heavily doped P+ guard rings surrounding the I/O ESD protection device and the Vcc to Vss protection device. In add... | 02/20/2007 |
| 7176548 | Complementary analog bipolar transistors with trench-constrained isolation diffusion A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices ... | 02/13/2007 |
| 7173320 | High performance lateral bipolar transistor A lateral bipolar transistor includes an emitter region, a base region, a collector region, and a gate disposed over the base region. A bias line is connected to the gate for applying a bias voltage thereto during operation of the transistor. The polarity of the bia... | 02/06/2007 |
| 7157785 | Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices A semiconductor device is disclosed that reduces the reverse leakage current caused by reverse bias voltage application and reduces the on-voltage of the IGBT. A two-way switching device using the semiconductor devices is provided, and a method of manufacturing the ... | 01/02/2007 |
| 7129588 | Portable telephone A portable telephone including an integrated circuit chip module with a first integrated circuit chip including a first power source pad for a first power voltage and an adjacent second power source pad for a second power voltage, the first power voltage being highe... | 10/31/2006 |
| 7122879 | Bipolar transistor with high dynamic performances A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy. ... | 10/17/2006 |
| 7109567 | Semiconductor device and method of manufacturing such device The invention relates to a semiconductor device with a heterojunction bipolar, in particular npn, transistor with an emitter region (1), a base region (2), and a collector region (3), which are provided with respectively a first, a second, and a... | 09/19/2006 |
| 7087979 | Bipolar transistor with an ultra small self-aligned polysilicon emitter The intrinsic base region of a bipolar transistor is formed to avoid a chemical interaction between the chemicals used in a chemical mechanical polishing step and the materials used to form the base region. The method includes the step of forming a trench in a layer... | 08/08/2006 |
| 7073410 | Hydraulic motor vehicle gearbox control device with a plastic hydraulic distribution plate and conductors integrated therein A hydraulic motor vehicle comprises a plastic hydraulic distributor plate (1) with channels (13a, 13b, 13c, 13d) for the distribution of hydraulic fluid extending therethrough. Electric conductors (9 | 07/11/2006 |
| 7067899 | Semiconductor integrated circuit device A semiconductor integrated circuit device according to the invention includes an N-type embedded diffusion region between a substrate and a first epitaxial layer in island regions serving as small signal section. The substrate and the first epitaxial layer are thus ... | 06/27/2006 |
| 7064416 | Semiconductor device and method having multiple subcollectors formed on a common wafer A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different characteristic and frequency response are provided. The subcollectors... | 06/20/2006 |
| 7061074 | Visible imaging device using Darlington phototransistors The present invention is a modified darlington phototransistor wherein a phototransistor is coupled to a Bipolar Junction Transistor (BJT). This design provides a high sensitivity and a fast response and effectively increases the gain of the photocurrent. This circu... | 06/13/2006 |
| 7056779 | Semiconductor power device A p type base layer is formed in one surface region of an n type base layer. An n type emitter layer is formed in a surface region of the p type base layer. An emitter electrode is formed on the n type emitter layer and the p type base layer. A trench is formed in t... | 06/06/2006 |
| 7023053 | Differential transistor pair A differential transistor pair comprises a plurality of transistor cells in a substrate. Each cell comprises first drain regions at the respective edge of the cell, and a second drain region in between. Source regions are located between the respective first drain r... | 04/04/2006 |
| 6982473 | Bipolar transistor At a surface region of an N−-type base region, surrounded by a P-type isolation region, a P+-type collector region, a P+-type emitter region, an N+-type base contact region, and an N-type rectifying region are formed. Th... | 01/03/2006 |
| 6977425 | Semiconductor device having a lateral MOSFET and combined IC using the same A semiconductor device realizes a high electrostatic discharge withstanding capability and a high surge withstanding capability within the narrow chip area of a lateral MOSFET used in integrated intelligent switching devices, double-integration-type signal input and... | 12/20/2005 |
| 6977426 | Semiconductor device including high speed transistors and high voltage transistors disposed on a single substrate In a semiconductor device comprising a first bipolar transistor and a second bipolar transistor having different voltages formed on a semiconductor substrate made by forming an epitaxial layer on a silicon substrate, in an upper part of the silicon substrate the fir... | 12/20/2005 |
| 6927118 | Method of fabricating a bipolar transistor utilizing a dry etching and a wet etching to define a base junction opening The present invention discloses a process of fabricating a semiconductor device comprising the steps of: forming a collector layer of a first conductivity type at a portion of a surface of a semiconductor substrate; forming a collector opening portion in a first ins... | 08/09/2005 |
| 6906419 | Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same In a semiconductor device, a wiring pattern groove is formed in a surface portion of a silicon oxide film provided above a semiconductor substrate. A wiring layer is buried into the wiring pattern groove with a barrier metal film interposed therebetween. The barrier... | 06/14/2005 |
| 6897545 | Lateral operation bipolar transistor and a corresponding fabrication process The transistor includes an emitter region 17 disposed in a first isolating well 11, 150 formed in a semiconductor bulk. An extrinsic collector region 16 is disposed in a second isolating well 3, 150 formed in the semiconductor bulk SB and... | 05/24/2005 |
| 6867477 | High gain bipolar transistor According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor might be a lateral PNP bipolar transistor and the base may comprise, for example, N type single crystal silicon. The bipolar transistor further ... | 03/15/2005 |
| 6864538 | Protection device against electrostatic discharges An ESD protection device encompassing a vertical bipolar transistor that is connected as a diode and has an additional displaced base area. The assemblage has a space-saving configuration and a decreased difference between snapback voltage and breakdown voltage.... | 03/08/2005 |
| 6798040 | Power semiconductor switch An IGBT structure includes successive regions whose conductivities have alternating signs. The structure is dimensioned for punch-through and is provided with two buffer layers. As a result, the component becomes symmetrically blocking and is suitable as a semicondu... | 09/28/2004 |
| 6798041 | Method and system for providing a power lateral PNP transistor using a buried power buss A power lateral PNP device is disclosed which includes an epitaxial layer; a first and second collector region embedded in the epitaxial layer, an emitter region between the first and second collector regions. Therefore slots are placed in each of the regions. Accor... | 09/28/2004 |
| 6784366 | Thermal dissipation package for an electrical surface mount component An electronic component (202), such as a power transistor, is formed of a molded plastic package having top (206), bottom (204) and side (208) surfaces and electrical contacts. A lead frame (210) attaches to one of the contacts and... | 08/31/2004 |
| 6737722 | Lateral transistor having graded base region, semiconductor integrated circuit and fabrication method thereof The lateral pnp transistor encompasses a p-type semiconductor substrate, an n-type first buried region disposed on the semiconductor substrate, an n-type uniform base region disposed on the first buried region, an n-type first plug region disposed in the uniform bas... | 05/18/2004 |
| 6570240 | Semiconductor device having a lateral bipolar transistor and method of manufacturing same In order to form a semiconductor device including a lateral bipolar transistor which is a match in the device performance for a vertical bipolar transistor, an electrically conductive film which is formed by filling a trench reaching a buried oxide film i... | 05/27/2003 |
| 6563193 | Semiconductor device A semiconductor device comprises a substrate the surface of which is formed of an insulation region, a high resistance active layer of a first conductivity type formed on the substrate, a first semiconductor region of the first conductivity type having an... | 05/13/2003 |
| 6551869 | Lateral PNP and method of manufacture A lateral PNP is disclosed in which a substrate of a first conductivity type is used. On top of the substrate a buried region of a second conductivity type is formed. A lightly doped collector region is located above the buried region. The lateral PNP als... | 04/22/2003 |
| 6489665 | Lateral bipolar transistor A substantially concentric lateral bipolar transistor and the method of forming same. A base region is disposed about a periphery of an emitter region, and a collector region is disposed about a periphery of the base region to form the concentric lateral ... | 12/03/2002 |
