Did You Know...
...that two musicians were responsible for the invention of color print film? Fascinated by photography, Leopold Godowsky and Leopold Mannes worked together to produce an easy-to-use, practical color film. They worked full time as music teachers and gave concerts while experimenting during their off hours in Mannes' kitchen. Their success earned them full-time, well-paying jobs at Kodak and their efforts resulted in Kodachrome film, which was introduced in 1935.
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| Number | Title | Issue Date |
| 8178948 | Electrostatic discharge protection circuit An electrostatic discharge (ESD) protection circuit includes a substrate, and a plurality of unit bipolar transistors formed in the substrate. Each of the plurality of unit bipolar transistors may include a first-conductivity-type buried layer formed in the substrat... | 05/15/2012 |
| 7323728 | Semiconductor device Disclosed is a semiconductor device including an n+-type semiconductor layer formed on a substrate, a first n-type semiconductor layer formed on the n+-type semiconductor layer, a p-type semiconductor layer formed on the first n-type semiconduc... | 01/29/2008 |
| 7319254 | Semiconductor memory device having resistor and method of fabricating the same A semiconductor device having resistors in a peripheral area and fabrication method thereof are provided. A mold layer is formed on a semiconductor substrate. The mold layer is patterned to form first molding holes and a second molding hole in the mold layer. A stor... | 01/15/2008 |
| 7141832 | Semiconductor device and capacitance regulation circuit According to an embodiment of the invention, there is provided a semiconductor device comprising: a semiconductor element having a first main electrode, a second main electrode and a control electrode, a current flowing between the first and second main electrodes b... | 11/28/2006 |
| 7071516 | Semiconductor device and driving circuit for semiconductor device A PMOS transistor (Q2) provided for developing a short circuit between the base and emitter of an N-type IGBT during turn-OFF includes a P diffusion region (5), a P diffusion region (6), and a conductive film (10) and a second gate electr... | 07/04/2006 |
| 7053463 | High-voltage integrated vertical resistor and manufacturing process thereof The manufacturing process comprises the steps of growing epitaxially a first layer from a semiconductor material substrate, forming in the first layer a first and a second buried region spaced from one another and having conductivity of the type opposite that of the... | 05/30/2006 |
| 7026876 | High linearity smart HBT power amplifiers for CDMA/WCDMA application A power amplifier includes larger size transistors to provide higher power gain at lower frequencies. Transistors of transistor unit cells include a horseshoe-shaped emitter and a strip-shaped base to increase gain. Transistors are combined at a first level to form ... | 04/11/2006 |
| 6921958 | IGBT with a Schottky barrier diode A semiconductor device which IGBT (Z1) and a control circuit (B1) for driving the IGBT (Z1) are formed on the same semiconductor substrate by using a junction isolation technology, includes an input terminal (P1) for inputting a drive sig... | 07/26/2005 |
| 6858917 | Metal oxide semiconductor (MOS) bandgap voltage reference circuit A metal oxide semiconductor (MOS) bandgap voltage reference circuit with a plurality of dummy bipolar junction transistors (BJTs) coupled to the mismatched parasitic substrate BJTs for improving parasitic capacitance matching, thereby improving startup behavior of t... | 02/22/2005 |
| 6803643 | Compact non-linear HBT array HBTs in an HBT array are configured non-linearly, i.e., staggered, thus reducing the impact of thermal coupling between adjacent HBTs in the array and bypassing the minimum collector-to-collector spacing design rules required for a linear HBT array. Using this non-l... | 10/12/2004 |
| 6777782 | Method for fabricating base-emitter self-aligned heterojunction bipolar transistors A transistor and method for making the same are disclosed. The transistor is constructed from a collector layer, a base layer, and an emitter layer in a stacked arrangement. The emitter layer is etched to form a mesa on an etched surface, the mesa having a top surfa... | 08/17/2004 |
| 6635545 | Method for fabricating a bipolar transistor and method for fabricating an integrated circuit configuration having such a bipolar transistor The bipolar transistor is produced such that a connection region of its base is provided with a silicide layer, so that a base resistance of the bipolar transistor is small. No silicide layer is produced between an emitter and an emitter contact and betwe... | 10/21/2003 |
| 6486532 | Structure for reduction of base and emitter resistance and related method According to one embodiment, a semiconductor device including a base, an emitter, and an emitter contact on top of the emitter is disclosed. For example, the semiconductor device can be a silicon-germanium heterojunction bipolar transistor, in which the b... | 11/26/2002 |
| 6483168 | Integrated circuit having resistor formed over emitter of vertical bipolar transistor An integrated circuit including a resistor that at least partially overlies a first tub of semiconductor material of a first polarity, where the first tub is formed in a second tub of semiconductor material having the opposite polarity, and the second tub... | 11/19/2002 |
| 6441463 | IGBT, control circuit, and protection circuit on same substrate Latch-up of each of parasitic thyristors (T1-T4), which occurs when a circuit element (B1) is formed on a semiconductor substrate in which an IGBT (Z1) has been formed, is prevented by a circuit for preventing the latch-up using Schottky barrier diodes (D... | 08/27/2002 |
| 6437419 | Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices A power semiconductor device has an integral source/emitter ballast resistor. The gate has partial gate structures spaced apart from each other. Emitter resistors are provided beneath sidewall spacers on the ends of the gate structures. The emitter resist... | 08/20/2002 |
| 6404060 | Semiconductor device having a chip-on-chip structure A semiconductor device has a first semiconductor chip having a device formed thereon and a second semiconductor chip having a protection circuit for protecting the device formed thereon. The second semiconductor chip is superposed on and bonded to the sur... | 06/11/2002 |
| 6287948 | Semiconductor device and method for making pattern data A semiconductor device has a first region, a second region and a border region between the first region and the second region. The semiconductor device has an interlayer dielectric layer, covering at least the first region and the second region. A first w... | 09/11/2001 |
| 6222249 | Semiconductor device A number of npn and pnp bipolar transistors is formed in a single chip of silicon, so that some of the transistors have a greater frequency response than others. The higher frequency transistors have their emitters located closer to the collectors, by pos... | 04/24/2001 |
| 5965931 | Bipolar transistor having base region with coupled delta layers A bipolar transistor includes multiple coupled delta layers in the base region between the emitter and collector regions to enhance carrier mobility and conductance. The delta layers can be varied in number, thickness, and dopant concentration to optimize... | 10/12/1999 |
| 5952705 | Monolithically integrated planar semi-conductor arrangement with temperature compensation A semiconductor, where a region is introduced into a semiconductor substrate and, together with this substrate, forms a p-n junction. Provision is made in the vicinity of the space charge region being formed for a covering electrode and a heavily doped re... | 09/14/1999 |
| 5859469 | Use of tungsten filled slots as ground plane in integrated circuit structure A semiconductor device having the base and collector surrounded by a continuous tungsten filled slot as ground plane. The portion of the tungsten filled slot over the buried layer extends beyond the surface of the buried layer and the portion of the tungs... | 01/12/1999 |
| 5858850 | Process of fabricating integrated heterojunction bipolar device and MIS capacitor A process of fabricating a semiconductor device includes the steps of: forming a base layer of a bipolar transistor (NPN bipolar transistor) on a semiconductor base body by selective epitaxial growth; and forming a dielectric film of a MIS capacitor on th... | 01/12/1999 |
| 5834823 | Transistor with constant voltage diode A power transistor incorporating a constant-voltage diode maintains the breakdown voltage of the constant-voltage diode at a specified level and prevents local breakdown of an insulating film located between an A1 field plate electrode and a base region o... | 11/10/1998 |
| 5631494 | Power semiconductor device with low on-state voltage A circuit connecting a sub-IGBT element S2 having a smaller current capacity and a smaller saturated current than the main IGBT element S1 and a resistance R1 in series is connected to the main IGBT element S1 i... | 05/20/1997 |
| 5466959 | Semiconductor device for influencing the breakdown voltage of transistors A semiconductor device for influencing the breakdown voltage of a transistor with a surface electrode arranged over a space charge region, separated from the same by an oxide layer. The surface electrode is at a potential, as determined by a voltage divid... | 11/14/1995 |
| 5449949 | Monolithic integrated semiconductor device A monolithic integrated semiconductor is proposed, in which on the main surface of a monolithically integrated n-p-n transistor or p-n-p transistor, a cover electrode (D1) is mounted for internal voltage limitation, covering only a single junction region ... | 09/12/1995 |
| 5387813 | Transistors with emitters having at least three sides A bipolar transistor is provided in which the base-emitter junctions do not traverse the base but terminate inside the top surface of the base. The transistor has long emitter perimeter available for current flow and more than two emitter sides (e.g., thr... | 02/07/1995 |
| 4994880 | Semiconductor device constituting bipolar transistor Base regions of first and second stage transistors are formed in a semiconductor substrate consisting of low and high resistivity collector layers, and emitter regions are formed in the respective base regions. The emitter region of the second stage trans... | 02/19/1991 |
| 4827322 | Power transistor A power transistor according to the present invention improves breakdown resistance, in a monolithic structure for connecting a first-stage transistor and a second-stage transistor in Darlington connection, by constructing the same such that no parasitic ... | 05/02/1989 |
| 4783694 | Integrated bipolar-MOS semiconductor device with common collector and drain The safe operating area can be increased and the die area can be decreased for a monolithic Darlington circuit employing an MOS input transistor and bipolar output transistor by subdividing the bipolar transistor into a multiplicity of rectangular spaced ... | 11/08/1988 |
| 4695867 | Monolithically integrated planar semiconductor arrangement A semiconductor arrangement is suggested which is provided with a capacity transistor and a drive transistor in form of a Dralington-circuit. Thereby, the two transistors are monolithically integrated with a planar technique in a common substrate (8), whi... | 09/22/1987 |
| 4604640 | Darlington transistors In a darlington transistor having an integrated resistor connected from base to emitter of the output transistor element, the effect of the diode between collector and emitter formed when the resistor consists of an extension to the base region is reduced... | 08/05/1986 |
| 4360822 | Semiconductor device having an improved semiconductor resistor A semiconductor device such as an integrated Darlington circuit includes a mesa which is bounded by two parallel grooves which extend into the device substrate. A semiconductor resistor is formed in the mesa and extends from the mesa surface down to a bur... | 11/23/1982 |
| 4312011 | Darlington power transistor This invention relates to a Darlington power transistor which executes a stable operation and which demonstrates satisfactory characteristics, characterized in that respective base regions of a driving transistor and an output transistor to be Darlington-... | 01/19/1982 |
| 4297597 | Darlington-connected semiconductor device A Darlington-connected semiconductor device comprises a pre-stage transistor having multi-emitter electrodes and a rear-stage transistor having multi-base electrodes. The multi-emitter electrodes of the pre-stage transistor are connected to the multi-base... | 10/27/1981 |
| 4293868 | Semiconductor device, method of manufacturing the same and application thereof This invention relates to a power transistor which includes a driving transistor and an output transistor in the Darlington connection. This invention has for its object to prevent the power transistor from being destroyed by a surge in such a way that a ... | 10/06/1981 |
| 4167748 | High voltage monolithic transistor circuit Disclosed is a monolithic transistor circuit for high voltage applications. A high impedance bleed resistor is effectively provided across the emitter-base junction of one of the transistors. This is accomplished by placing the base regions of this and an... | 09/11/1979 |
| 4138690 | Darlington circuit semiconductor device A semiconductor device comprises darlington-connected first and second transistors, a diode connected between the emitter of the first transistor and the base of the second transistor and a resistor connected in parallel to the diode -- all being formed i... | 02/06/1979 |
| 4136355 | Darlington transistor In a device of Darlington connection of transistors formed on one monolithic substrate, wherein the substrate has a collector region of a first conductivity and a base region of a second conductivity, the collector region and the base region forming a P-N... | 01/23/1979 |
