Did You Know...
...that two musicians were responsible for the invention of color print film? Fascinated by photography, Leopold Godowsky and Leopold Mannes worked together to produce an easy-to-use, practical color film. They worked full time as music teachers and gave concerts while experimenting during their off hours in Mannes' kitchen. Their success earned them full-time, well-paying jobs at Kodak and their efforts resulted in Kodachrome film, which was introduced in 1935.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8039924 | Semiconductor device including capacitor element provided above wiring layer that includes wiring with an upper surface having protruding portion A semiconductor device includes a first wiring layer which is provided above a semiconductor substrate and includes a first insulating film and a wiring buried in the first insulating film, a second insulating film provided above the first wiring layer, a third insu... | 10/18/2011 |
| 7989919 | Capacitor arrangement and method for making same One or more embodiments relate to a semiconductor chip including a capacitor arrangement, the capacitor arrangement comprising: a first capacitor; and a second capacitor stacked above the first capacitor, the first capacitor and the second capacitor coupled in serie... | 08/02/2011 |
| 7956440 | Capacitor and semiconductor device including the same A capacitor includes a first capacitor structure on a substrate, the first capacitor structure including a first electrode, a first dielectric layer pattern, and a second electrode, a second capacitor structure on the first capacitor structure, the second capacitor ... | 06/07/2011 |
| 7875956 | Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer betwe... | 01/25/2011 |
| 7659602 | Semiconductor component with MIM capacitor A structure and method of forming a capacitor is described. In one embodiment, the capacitor includes a cylindrical first electrode having an inner portion bounded by a bottom surface and an inner sidewall surface, the first electrode further having an outer sidewal... | 02/09/2010 |
| 7633138 | Semiconductor device and method of manufacturing the same The semiconductor device 1 includes an insulating interlayer 10, interconnects 12a to 12c, an insulating interlayer 20, and a capacitor element 30. On the insulating interlayer 10 and the interconnects | 12/15/2009 |
| 7602043 | Coupling capacitor and semiconductor memory device using the same A coupling capacitor and a semiconductor memory device using the same are provided. In an embodiment, each memory cell of the semiconductor memory device includes a coupling capacitor so that a storage capacitor can store at least 2 bits of data. The coupling capaci... | 10/13/2009 |
| 7535080 | Reducing parasitic mutual capacitances A method to reduce parasitic mutual capacitances in embedded passives. A first capacitor is formed by first and second electrodes embedding a dielectric layer. A second capacitor is formed by third and fourth electrodes embedding the dielectric layer. The third and ... | 05/19/2009 |
| 7407897 | Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same In a capacitor of an analog semiconductor device having a multi-layer dielectric film and a method of manufacturing the same, the multi-layer dielectric film can be readily manufactured, has weak reactivity with corresponding electrodes and offers excellent leakage ... | 08/05/2008 |
| 7388275 | Electronic package with integrated capacitor Generally provided is a circuit assembly construction for controlling impedance in an electronic package. A large scale, parallel-plate capacitor includes two electrodes separated by a dielectric material. The electrodes serve as reference voltage planes for the ele... | 06/17/2008 |
| 7378739 | Capacitor and light emitting display using the same A capacitor including a polysilicon layer doped with impurities to be conductive, a first dielectric layer formed on the polysilicon layer, a first conductive layer formed on the first dielectric layer, a second dielectric layer formed on the first conductive layer,... | 05/27/2008 |
| 7375376 | Semiconductor display device and method of manufacturing the same A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from esca... | 05/20/2008 |
| 7372126 | Organic substrates with embedded thin-film capacitors, methods of making same, and systems containing same A thin-film capacitor assembly includes two plates that are accessed through deep and shallow vias. The thin-film capacitor assembly is able to be coupled with a spacer and an interposer. The thin-film capacitor assembly is also able to be stacked with a plurality o... | 05/13/2008 |
| 7365382 | Semiconductor memory having charge trapping memory cells and fabrication method thereof A semiconductor memory having charge trapping memory cells, where the direction of current flow of each channel region of the memory transistors runs transversely with respect to the relevant word line, the bit lines are arranged on the top side of the word lines an... | 04/29/2008 |
| 7358591 | Capacitor device and semiconductor device having the same, and capacitor device manufacturing method In a capacitor device of the present invention, a capacitor parts that has a pair of terminals on both end sides respectively is embedded in an insulating film in a state that a lower surface of the capacitor parts is not covered with the insulating film, then upper... | 04/15/2008 |
| 7358121 | Tri-gate devices and methods of fabrication The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite ... | 04/15/2008 |
| 7355264 | Integrated passive devices with high Q inductors The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover (second) substrate. The cover substrate is then flip bonded to the b... | 04/08/2008 |
| 7348656 | Power semiconductor device with integrated passive component A power semiconductor device that includes a passive component, e.g., a capacitor, mechanically and electrically coupled to at least one pole thereof. ... | 03/25/2008 |
| 7342314 | Device having a useful structure and an auxiliary structure The present invention provides a device having a useful structure which is arranged on a substrate and has a useful structure side edge. In addition, an auxiliary structure is arranged on the substrate adjacent to the useful structure, the auxiliary structure having... | 03/11/2008 |
| 7312514 | High-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, and production method of thin film capacity element A dielectric thin film 8, comprising a first bismuth layer-structured compound layer 8a expressed by a composition formula of (Bi2O2)2+(Am−1 Bm O3m+1)2− or Bi2... | 12/25/2007 |
| 7301218 | Parallel capacitor of semiconductor device Disclosed herein is a parallel capacitor of a semiconductor device. According to the present invention, a first capacitor and a second capacitor are formed in different layers of the same region, wherein a metal layer connected to an upper electrode of the first cap... | 11/27/2007 |
| 7301752 | Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer ab... | 11/27/2007 |
| 7291897 | One mask high density capacitor for integrated circuits An on-chip decoupling capacitor (106) and method of fabrication. The decoupling capacitor (104) is integrated at the top metal interconnect level (104) and may be implemented with only one additional masking layer. The decoupling capacitor (1... | 11/06/2007 |
| 7276776 | Semiconductor device A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnec... | 10/02/2007 |
| 7268411 | Insulating film and electronic device A capacitor includes a first electrode, an insulating film and a second electrode. The insulating film includes n layers of barrier layers each consisting of a material having a bandgap larger than a first bandgap and having a relative permittivity smaller than a fi... | 09/11/2007 |
| 7239083 | Electro-optical device with active matrix type EL display An electro-optical device for performing time division gray scale display and which is capable of arbitrarily setting the amount of time during which light is emitted by EL elements is provided. From among n sustain periods Ts1, . . . , Tsn, the brightness of... | 07/03/2007 |
| 7238981 | Metal-poly integrated capacitor structure A metal-poly integrated capacitor structure that may be used in a charge pump circuit of a non-volatile memory. In one embodiment, the capacitor comprises a poly silicon layer, a first metal layer and a second metal layer. The first metal layer is positioned between... | 07/03/2007 |
| 7233053 | Integrated semiconductor product with metal-insulator-metal capacitor To fabricate an integrated semiconductor product with integrated metal-insulator-metal capacitor, first of all a dielectric auxiliary layer (6) is deposited on a first electrode (2, 3, 5). This auxiliary layer (6) is then opened up (15) v... | 06/19/2007 |
| 7230292 | Stud electrode and process for making same A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically conductive seed film in a contact corridor of the dielectric stack. A storage ... | 06/12/2007 |
| 7227241 | Integrated stacked capacitor and method of fabricating same An integrated stacked capacitor comprises a first capacitor film (46) of polycrystalline silicide (poly), a second capacitor film (48) and a first dielectric (26) sandwiched between the first capacitor film (46) and second capacitor film ... | 06/05/2007 |
| 7227240 | Semiconductor device with wire bond inductor and method A semiconductor device (10) includes a semiconductor die (20) and an inductor (30, 50) formed with a bonding wire (80) attached to a top surface (21) of the semiconductor die. The bonding wire is extended laterally a distance (L... | 06/05/2007 |
| 7224062 | Chip package with embedded panel-shaped component A bump-less chip package is provided. The bump-less chip package includes a chip, an interconnection structure and a panel-shaped component. The panel-shaped component has a plurality of electrical terminals on a first surface thereof. The back surface of the chip i... | 05/29/2007 |
| 7224040 | Multi-level thin film capacitor on a ceramic substrate In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer betwe... | 05/29/2007 |
| 7208355 | Semiconductor device and method for preparing the same A semiconductor device and a method for preparing the same that can solve crack of a semiconductor film, capacitance electrodes and the like due to stress when forming a source electrode and a drain electrode in a semiconductor device having a thin film transistor a... | 04/24/2007 |
| 7202563 | Semiconductor device package having a semiconductor element with resin A semiconductor device is disclosed, which comprises a semiconductor element in which a laminated film composed of a plurality of layers including an insulating film is formed on a surface of a semiconductor substrate, and a portion of the laminated film is removed ... | 04/10/2007 |
| 7199415 | Conductive container structures having a dielectric cap Container structures for use in integrated circuits and methods of their manufacture. The container structures have a dielectric cap on the top of a conductive container to reduce the risk of container-to-container shorting by insulating against bridging of conducti... | 04/03/2007 |
| 7195974 | Method of manufacturing ferroelectric film capacitor A method of manufacturing a ferroelectric film capacitor includes forming a platinum film used as an electrode material over a whole surface of a silicon substrate, batch-etching the platinum film to form opposite electrodes that serve as a pair of capacitor electro... | 03/27/2007 |
| 7187055 | Rectifying charge storage element An electronic device or signal processing device consists of a rectifier and capacitor which share common elements facilitating the construction and application of the device to various types of substrates and, particularly, flexible substrates. Components of the de... | 03/06/2007 |
| 7180156 | Thin-film devices and method for fabricating the same on same substrate To satisfy the different requirement of TFTs function as peripheral driving circuit and pixel switching device, the modified TFT structure with various thicknesses of gate insulating layers is disclosed. For the peripheral driving circuit, the thinner thickness of t... | 02/20/2007 |
| 7166902 | Trench-based capacitor for integrated circuits In one embodiment, an electrically conductive trench in an integrated circuit allows for the formation of capacitors between the trench and other portions of the integrated circuit. For example, a capacitor may be formed between the trench and an electrically conduc... | 01/23/2007 |
