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Behavior Modification Wristwatch
A wristwatch including a watch band and a watch body having an octagon shaped perimeter and being red in color and having the word STOP thereon to resemble a stop sign.
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| Number | Title | Issue Date |
| 8154020 | Photo-voltaic cell device and display panel A photo-voltaic cell device includes a first electrode, an N-type doped silicon-rich dielectric layer, a P-type doped silicon-rich dielectric layer, and a second electrode. The N-type doped silicon-rich dielectric layer is disposed on the first electrode, and the N-... | 04/10/2012 |
| 8138499 | Stacked photoelectric conversion device To provide a stacked photoelectric conversion device capable of inhibiting extreme decrease of the output in the morning and evening. A stacked photoelectric conversion device of the present invention comprises a first photoelectric conversion layer, a second... | 03/20/2012 |
| 8120027 | Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cos... | 02/21/2012 |
| 8115203 | Photoconductors for mid-/far-IR detection An infrared photodiode structure is provided. The infrared photodiode structure includes a doped semiconductor layer having ions of certain conductivity. An active photodetecting region is positioned on the doped semiconductor layer for detecting an infrared light s... | 02/14/2012 |
| 8080825 | Image sensor and method for manufacturing the same An image sensor may include a first substrate having circuitry including wires and a silicon layer formed on and/or over the first substrate to selectively contact the wires. The image sensor may include photodiodes bonded to the first substrate while contacting the... | 12/20/2011 |
| 8030651 | Micro electro mechanical device and manufacturing method thereof To manufacture a micro structure and an electric circuit included in a micro electro mechanical device over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are int... | 10/04/2011 |
| RE42157 | Photoelectric converter, its driving method, and system including the photoelectric converter A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first elect... | 02/22/2011 |
| 7732813 | Image sensor and method for manufacturing the same An image sensor and a method of manufacturing the same are provided. A metal wiring layer is formed on a semiconductor substrate including a circuit region, and first conductive layers are formed on the metal layer separated by a pixel isolation layer. An intrinsic ... | 06/08/2010 |
| 7649201 | Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed. Raising the photosensor increases the fill factor and the quantum efficie... | 01/19/2010 |
| 7638799 | Image sensor structure with recessed separator layer An image sensor structure includes a plurality of pixels formed on a substrate. Each pixel includes an image senor interconnect structure, a separator layer and an electrode layer, wherein the separator layer has a first thickness an a sidewall of the separator laye... | 12/29/2009 |
| 7429750 | Solid-state element and solid-state element device A solid-state element has: a semiconductor layer formed on a substrate, the semiconductor layer having a first layer that corresponds to an emission area of the solid-state element to and a second layer through which current is supplied to the first layer; a light d... | 09/30/2008 |
| 7420207 | Photo-detecting device and related method of formation A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epit... | 09/02/2008 |
| 7397067 | Microdisplay packaging system Some embodiments provide a microdisplay integrated circuit (IC), a substantially transparent protective cover coupled to the microdisplay IC, and a base coupled to the microdisplay IC. Thermal expansion characteristics of the base may be substantially similar to the... | 07/08/2008 |
| 7397066 | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/... | 07/08/2008 |
| 7387952 | Semiconductor substrate for solid-state image pickup device and producing method therefor A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a thickness of 0.5-2.0, on a rear surface of the pixel area-bearing surface,... | 06/17/2008 |
| 7368750 | Semiconductor light-receiving device A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrat... | 05/06/2008 |
| 7366373 | Plasmon switch A variety of structures, methods, systems, and configurations can support plasmons for logic. ... | 04/29/2008 |
| 7365004 | Method for manufacturing semiconductor device The invention is aimed to prevent that fall of characteristic of a solar battery and producing yield caused by particles of powder condition generating from working part at laser beam process in the method producing the solar battery by laser beam process. The const... | 04/29/2008 |
| 7361930 | Method for forming a multiple layer passivation film and a device incorporating the same A method of forming a multiple layer passivation film on a semiconductor device surface comprises placing a semiconductor device in a chemical vapor deposition reactor, introducing a nitrogen source into the reactor, introducing a carbon source into the reactor, dep... | 04/22/2008 |
| 7358584 | Imaging sensor An imaging sensor includes a signal processing section, a photo-current generating and collecting section, and a separating region between the signal processing section and the photo-current generating and collecting section. The photo-current generating and collect... | 04/15/2008 |
| 7354857 | Method of making iron silicide and method of making photoelectric transducer A solar cell comprises a substrate, and a metal electrode layer, a p-i-n junction, and a transparent electrode layer which are successively laminated on the substrate. The p-i-n junction comprises an n layer, an i layer, and a p layer which are laminated in this ord... | 04/08/2008 |
| 7351605 | Method of manufacturing a semiconductor device The number of masks is reduced in a method of manufacturing a semiconductor device that has a transistor and a photoelectric conversion element on an insulating surface. In a manufacturing method of the present invention, semiconductor layers functioning as a source... | 04/01/2008 |
| 7352044 | Photoelectric transducer, photoelectric transducer apparatus, and iron silicide film A solar battery 10 comprises a metal electrode layer 12, a pin junction 100, and a transparent electrode layer 16 which are successively laminated on a substrate 11 such as a silicon substrate. The pin junction 100 comprises... | 04/01/2008 |
| 7348598 | Thin film transistor and liquid crystal display device using the same A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT includes a gate electrode for... | 03/25/2008 |
| 7349234 | Magnetic memory array A magnetic random access memory (MRAM) device disclosed herein includes an array of magnetic memory cells having magnetoresistive (MR) stacks. The MRAM array also includes a series of bit lines and word lines coupled to the MR stacks. The array layout provides for r... | 03/25/2008 |
| 7342221 | Radiation image pick-up device, radiation image pick-up method, and image pick-up system A plurality of correction images are obtained while changing the radiation energy of an incident radiation in the absence of an object. Subsequently, an object image is obtained in the presence of the object by emitting the radiation to the object. Then, the object ... | 03/11/2008 |
| 7335985 | Method and system for electrically coupling a chip to chip package A chip and a chip package can transmit information to each other by using a set of converters capable of communicating with each other through the emission and reception of electromagnetic signals. Both the chip and the chip package have at least one such converter ... | 02/26/2008 |
| 7332778 | Semiconductor device and method of manufacturing same To refine a semiconductor device (100), in particular a S[ilicon]O[n]I[nsulator] device, comprising: at least one isolating layer (10) made of a dielectric material; at least one silicon substrate ( | 02/19/2008 |
| 7329942 | Array-type modularized light-emitting diode structure and a method for packaging the structure An array-type modularized light-emitting diode structure and a method for packaging the structure. The array-type modularized light-emitting diode structure includes a lower substrate and an upper substrate fixed on the lower substrate. A material with high heat con... | 02/12/2008 |
| 7323731 | Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite ... | 01/29/2008 |
| 7323759 | Photosensor for a transmitted light method used for detecting the direction of movement of intensity maxima and intensity minima of an optical standing wave A photosensor for a transmitted-light method for detecting the intensity profile of an optical standing wave, with a transparent substrate, with a semiconductor component, and with at least three contacts, is characterized by the fact that two semiconductor componen... | 01/29/2008 |
| 7315054 | Decoupling capacitor density while maintaining control over ACLV regions on a semiconductor integrated circuit In one embodiment, a method of controlling the across-chip line-width variation (ACLV) on a semiconductor integrated circuit includes forming an ACLV controlled region including a plurality of semiconductor devices each having a gate structure and arranging the plur... | 01/01/2008 |
| 7313219 | Radiation image pick-up device, radiation image pick-up method and program To provide a radiation image pick-up device capable of obtaining a plurality of tomography images through single-time image pick-up, a radiation image pick-up method and a program. When a position controller moves an X-ray source to an optional tomography pla... | 12/25/2007 |
| 7288788 | Predoped transfer gate for an image sensor A novel Active Pixel Sensor (APS) cell structure and method of manufacture. Particularly, an image sensor APS cell having a predoped transfer gate is formed that avoids the variations of Vt as a result of subsequent manufacturing steps. According to the p... | 10/30/2007 |
| 7288428 | Solid state image pickup device and manufacturing method thereof and semiconductor integrated circuit device and manufacturing method thereof A method of manufacturing a solid-state image pickup device comprises a process for forming a plurality of photoelectric conversion elements PD within a semiconductor substrate 4, a process for forming an interconnection portion, having an interconnection lay... | 10/30/2007 |
| 7285765 | Photoelectric converter and X-ray image pick-up device A photoelectric converter includes a plurality of substrates, which are located adjacent to each other and on which a plurality of photoelectric conversion devices are two-dimensionally arranged, and either scan circuits or detection circuits that are arranged on tw... | 10/23/2007 |
| 7285796 | Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed. Raising the photosensor increases the fill factor and the quantum efficie... | 10/23/2007 |
| 7279371 | Thin film transistor array panel and manufacturing method thereof A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a first insulating layer and a semiconductor layer in sequence on the gate line; depositing a conductive layer on the semiconduct... | 10/09/2007 |
| 7274394 | Solid state image pickup device and manufacturing method therefor A method of manufacturing a MOS-type solid-state image pickup device having a photoelectric conversion unit, a transfer MOS transistor, a gate electrode disposed on an insulating film and a semiconductor substrate on which the photoelectric conversion unit and the t... | 09/25/2007 |
| 7259406 | Semiconductor optical element A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InG... | 08/21/2007 |
