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Patent No. 6681419

Forehead support apparatusĀ 

A forehead support apparatus for resting a standing users forehead against a wall above a bathroom commode or urinal or beneath a showerhead.

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Class 257/523 - Isolation by region of intrinsic (undoped) semiconductor material (e.g., including region physically damaged by proton bombardment)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the electrical insulator material
No. of patents: 95
Last issue date: 12/14/2010


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NumberTitleIssue Date
7851884Field-effect transistor, semiconductor chip and semiconductor device
A FET exhibiting excellent uniformity and productivity and having a low noise figure and high associated gain as high-frequency performance, a semiconductor chip having this FET and a semiconductor device having the semiconductor chip. The FET includes a GaAs substr...
12/14/2010
7382015Semiconductor device including an element isolation portion having a recess
A non-volatile semiconductor memory device, which is intended to prevent data destruction by movements of electric charges between floating gates and thereby improve the reliability, includes element isolation/insulation films buried into a silicon substrate to isol...
06/03/2008
7365565Programmable system on a chip for power-supply voltage and current monitoring and control
A programmable system-on-a-chip integrated circuit device includes a programmable logic block, at least one user non-volatile memory block, and voltage-measuring and control analog and digital circuits on a single semiconductor integrated circuit chip or a flip chip...
04/29/2008
7352206Integrated circuit device having state-saving and initialization feature
An integrated circuit device has a state-saving feature and includes a programmable logic block, I/O pads, a dedicated register, at least one volatile memory block, a non-volatile memory block, a condition-sensing circuit for detecting at least one condition, A cont...
04/01/2008
7340121Optoelectric composite substrate and method of manufacturing the same
An optoelectric composite substrate of the present invention includes an insulating film, an optical waveguide embedded in the insulating film in a state that an upper surface is exposed from the insulating film, a via hole formed to pass through the insulating film...
03/04/2008
7340596Embedded processor with watchdog timer for programmable logic
A programmable logic integrated circuit has an embedded processor with a watchdog timer circuit. The watchdog timer circuit is used to detect software or hardware failures. In one implementation, the watchdog timer circuit includes a counter register that advances (...
03/04/2008
7279770Isolation techniques for reducing dark current in CMOS image sensors
A structure for isolating areas in a semiconductor device is provided. The structure includes a trench having first and second portions formed in a substrate. The first portion has a first width, and the second portion has a second width and is below the first porti...
10/09/2007
7256610Programmable system on a chip for temperature monitoring and control
A programmable system-on-a-chip integrated circuit device includes a programmable logic block, at least one user non-volatile memory block, and temperature sensing and control analog and digital circuits on a single semiconductor integrated circuit chip or a flip ch...
08/14/2007
7235857Power semiconductor device
A semiconductor device is provided in which a plurality of MOSFETs including a vertical MOSFET is formed on a substrate. The device includes a silicon carbide substrate having front and back surfaces facing each other, an isolating region formed in the substrate to ...
06/26/2007
7205632Anti-scattering attenuator structure for high energy particle radiation into integrated circuits
A microelectronics device including a semiconductor device located at least partially over a substrate, a bombarded area located at least partially over the substrate and adjacent the semiconductor device, and a bombarded attenuator interposing the semiconductor dev...
04/17/2007
7199441Optical module device driven by a single power supply
An optical integrated circuit having optical devices is fabricated. These optical devices must be biased in the mutually opposite directions. If such an optical integrated circuit is fabricated using a conductive semiconductor substrate as conventionally, it is not ...
04/03/2007
7196395Semiconductor device and manufacturing method
The object is the present invention is to provide a semiconductor device including a circuit employing two or more field-effect transistor that are desired to have equal characteristics, capable of realizing high reliability and superior transistor characteristics. ...
03/27/2007
7170315Programmable system on a chip
A programmable system-on-a-chip integrated circuit device comprises a programmable logic block, a non-volatile memory block, an analog sub-system, an analog input/output circuit block, and a digital input/output circuit block. A programmable interconnect architectur...
01/30/2007
7138824Integrated multi-function analog circuit including voltage, current, and temperature monitor and gate-driver circuit blocks
An integrated multi-function analog circuit includes at least one MOSFET gate-drive circuit coupled to a first I/O pad. At least one voltage-sensing circuit is coupled to a second I/O pad. At least one current-sensing circuit is coupled to the second I/O pad and a t...
11/21/2006
7129746System-on-a-chip integrated circuit including dual-function analog and digital inputs
An integrated circuit includes a plurality of inputs, a plurality of output pads, a programmable logic block, an analog circuit block, an analog-to-digital converter programmably coupleable to individual analog circuits in the analog circuit block, and an interconne...
10/31/2006
7119398Power-up and power-down circuit for system-on-a-chip integrated circuit
A power-up and power-down circuit for an integrated circuit includes a voltage regulator set for a first voltage. A first I/O pad is coupled internally to an input to the voltage regulator and to first internal circuits. The second voltage is externally coupled to t...
10/10/2006
7115988Bypass capacitor embedded flip chip package lid and stiffener
The present invention provides a heat spreader with a bypass capacitor to provide substantially instant power and/or to control simultaneous switching noise (SSN). The present invention also provides a semiconductor device package incorporating this heat spreader. I...
10/03/2006
7116181Voltage- and temperature-compensated RC oscillator circuit
An integrated temperature-compensated RC oscillator circuit includes an inverter having an input and an output. An RC network is coupled between the inverter and a pair of comparators. A first comparator has an inverting input coupled to a first reference voltage, a...
10/03/2006
7112867Resistive isolation between a body and a body contact
A high resistance region may be used to isolate the body of a first transistor from a body contact. ...
09/26/2006
7102384Non-volatile memory architecture for programmable-logic-based system on a chip
A programmable system-on-a-chip integrated circuit device includes a programmable logic block. A digital input/output circuit block is coupled to the programmable logic block. A SRAM block is coupled to the programmable logic block. At least one non-volatile memory ...
09/05/2006
7102391Clock-generator architecture for a programmable-logic-based system on a chip
A programmable system-on-a-chip integrated circuit device comprises at least one of a crystal oscillator circuit, an RC oscillator circuit, and an external oscillator input. A clock conditioning circuit is selectively coupleable to one of the programmable logic bloc...
09/05/2006
7099189SRAM cell controlled by non-volatile memory cell
First and second complimentary static random-access-memory cell bit lines are coupled to first and second bit nodes through first and second access transistors controlled by a word line. A first inverter has an input coupled to the first bit node and an output coupl...
08/29/2006
7034569Programmable system on a chip for power-supply voltage and current monitoring and control
A programmable system-on-a-chip integrated circuit device includes a programmable logic block, at least one user non-volatile memory block, and voltage-measuring and control analog and digital circuits on a single semiconductor integrated circuit chip or a flip chip...
04/25/2006
7030649Integrated circuit including programmable logic and external-device chip-enable override control
An integrated circuit device includes a programmable logic block, a monitoring input, a condition-sensing circuit coupled to the monitoring input and configured to generate a condition-sensed signal at an output in response to sensing a condition at the monitoring i...
04/18/2006
6949812Method for manufacturing a high frequency semiconductor structure and high frequency semiconductor structure
A semiconductor structure for high frequency operation has a substrate with a doped well formed therein and a buffer layer made of a substrate material covers the well. The buffer layer is made of an undoped material and is disposed on a top side of the well for inh...
09/27/2005
6787877Method for filling structural gaps and integrated circuitry
A semiconductor processing method for filling structural gaps includes depositing a substantially boron free silicon oxide comprising material at a first average deposition rate over an exposed semiconductive material in a gap between wordline constructions and at a...
09/07/2004
6774454Semiconductor device with an silicon insulator (SOI) substrate
A semiconductor and a method of manufacturing thereof form a region with a sufficient gettering effect. A p-type channel MOSFET and an n-type channel MOSFET are formed in an n-type semiconductor layer, which is isolated in a form of islands on an SOI substrate. A hi...
08/10/2004
6774416Small area cascode FET structure operating at mm-wave frequencies
A small area cascode FET structure capable of operating at mm-wave frequenices cascades a common-source (CS) FET with a common gate (CG) FET, in a smaller physical area than conventional cascode FET structures. The small area of the cascode FET structure is partiall...
08/10/2004
6724020Semiconductor device and power amplifier using the same
A semiconductor device comprising a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which is formed on the surface of the guard ring of the emitter layer, wher...
04/20/2004
6661068Semiconductor device and method of providing regions of low substrate capacitance
A semiconductor structure (1), comprising a isolation region (5) formed on a semiconductor material (10). A pillar (15) is formed in the semiconductor material under the isolation region, where the pillar is capped with a first dielectric material (20) to...
12/09/2003
6646320Method of forming contact to poly-filled trench isolation region
Existing polysilicon emitter technology is used to contact poly fill in a trench isolation structure. A standard single poly emitter window process is followed. An "emitter window" is masked directly over the polysilicon trench fill. Heavily doped single ...
11/11/2003
6635537Method of fabricating gate oxide
A method of fabricating a gate oxide layer. A mask layer isformed on a substrate. The mask layer and the substrate are patterned to form a trench in the substrate. A portion of the mask layer is removed to expose the substrate at a top edge corner portion...
10/21/2003
6576937Semiconductor device and power amplifier using the same
A semiconductor device including a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which is formed on the surface of the guard ring of the emitter l...
06/10/2003
6479880Floating gate isolation device
An isolation structure providing electrical isolation in two dimensions between memory cells in semiconductor memory device. The isolation structure comprises a trench formed in a substrate of a semiconductor memory device such as a Dynamic Random Access ...
11/12/2002
6465867Amorphous and gradated barrier layer for integrated circuit interconnects
An integrated circuit and manufacturing method therefor is provided having a semiconductor substrate with a semiconductor device. A device dielectric layer is formed on the semiconductor substrate. A channel dielectric layer on the device dielectric layer...
10/15/2002
6459134Semiconductor devices which have analog and digital circuits integrated on a common substrate
A semiconductor device with digital and analog circuits has a structure for preventing noise penetration from the digital circuit to the analog circuit. The semiconductor device has a semiconductor substrate, first and second wells independently formed at...
10/01/2002
6414368Microcomputer with high density RAM on single chip
A microcomputer comprises an integrated circuit device with processor and memory and communication links arranged to provide non-shared connections to similar links of other microcomputers. The communication links include message synchronisation and permi...
07/02/2002
6404034CMOS circuit with all-around dielectrically insulated source-drain regions
A CMOS circuit has all-around dielectrically insulated source-drain regions. Trenches are formed in the source-drain regions. The trenches are etched onto the mono-crystalline silicon and filled with undoped or very lightly doped silicon. The completely o...
06/11/2002
6388334System and method for circuit rebuilding via backside access
A circuit modification tool and method for a flip-chip IC permits access to circuit regions near the interconnects using an aperture formed through the circuit side. In one embodiment, an etching tool is adapted to remove substrate from the backside of th...
05/14/2002
6373099Method of manufacturing a surrounding gate type MOFSET
A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interpo...
04/16/2002
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