A forehead support apparatus for resting a standing users forehead against a wall above a bathroom commode or urinal or beneath a showerhead.
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7851884 | Field-effect transistor, semiconductor chip and semiconductor device A FET exhibiting excellent uniformity and productivity and having a low noise figure and high associated gain as high-frequency performance, a semiconductor chip having this FET and a semiconductor device having the semiconductor chip. The FET includes a GaAs substr... | 12/14/2010 |
| 7382015 | Semiconductor device including an element isolation portion having a recess A non-volatile semiconductor memory device, which is intended to prevent data destruction by movements of electric charges between floating gates and thereby improve the reliability, includes element isolation/insulation films buried into a silicon substrate to isol... | 06/03/2008 |
| 7365565 | Programmable system on a chip for power-supply voltage and current monitoring and control A programmable system-on-a-chip integrated circuit device includes a programmable logic block, at least one user non-volatile memory block, and voltage-measuring and control analog and digital circuits on a single semiconductor integrated circuit chip or a flip chip... | 04/29/2008 |
| 7352206 | Integrated circuit device having state-saving and initialization feature An integrated circuit device has a state-saving feature and includes a programmable logic block, I/O pads, a dedicated register, at least one volatile memory block, a non-volatile memory block, a condition-sensing circuit for detecting at least one condition, A cont... | 04/01/2008 |
| 7340121 | Optoelectric composite substrate and method of manufacturing the same An optoelectric composite substrate of the present invention includes an insulating film, an optical waveguide embedded in the insulating film in a state that an upper surface is exposed from the insulating film, a via hole formed to pass through the insulating film... | 03/04/2008 |
| 7340596 | Embedded processor with watchdog timer for programmable logic A programmable logic integrated circuit has an embedded processor with a watchdog timer circuit. The watchdog timer circuit is used to detect software or hardware failures. In one implementation, the watchdog timer circuit includes a counter register that advances (... | 03/04/2008 |
| 7279770 | Isolation techniques for reducing dark current in CMOS image sensors A structure for isolating areas in a semiconductor device is provided. The structure includes a trench having first and second portions formed in a substrate. The first portion has a first width, and the second portion has a second width and is below the first porti... | 10/09/2007 |
| 7256610 | Programmable system on a chip for temperature monitoring and control A programmable system-on-a-chip integrated circuit device includes a programmable logic block, at least one user non-volatile memory block, and temperature sensing and control analog and digital circuits on a single semiconductor integrated circuit chip or a flip ch... | 08/14/2007 |
| 7235857 | Power semiconductor device A semiconductor device is provided in which a plurality of MOSFETs including a vertical MOSFET is formed on a substrate. The device includes a silicon carbide substrate having front and back surfaces facing each other, an isolating region formed in the substrate to ... | 06/26/2007 |
| 7205632 | Anti-scattering attenuator structure for high energy particle radiation into integrated circuits A microelectronics device including a semiconductor device located at least partially over a substrate, a bombarded area located at least partially over the substrate and adjacent the semiconductor device, and a bombarded attenuator interposing the semiconductor dev... | 04/17/2007 |
| 7199441 | Optical module device driven by a single power supply An optical integrated circuit having optical devices is fabricated. These optical devices must be biased in the mutually opposite directions. If such an optical integrated circuit is fabricated using a conductive semiconductor substrate as conventionally, it is not ... | 04/03/2007 |
| 7196395 | Semiconductor device and manufacturing method The object is the present invention is to provide a semiconductor device including a circuit employing two or more field-effect transistor that are desired to have equal characteristics, capable of realizing high reliability and superior transistor characteristics. ... | 03/27/2007 |
| 7170315 | Programmable system on a chip A programmable system-on-a-chip integrated circuit device comprises a programmable logic block, a non-volatile memory block, an analog sub-system, an analog input/output circuit block, and a digital input/output circuit block. A programmable interconnect architectur... | 01/30/2007 |
| 7138824 | Integrated multi-function analog circuit including voltage, current, and temperature monitor and gate-driver circuit blocks An integrated multi-function analog circuit includes at least one MOSFET gate-drive circuit coupled to a first I/O pad. At least one voltage-sensing circuit is coupled to a second I/O pad. At least one current-sensing circuit is coupled to the second I/O pad and a t... | 11/21/2006 |
| 7129746 | System-on-a-chip integrated circuit including dual-function analog and digital inputs An integrated circuit includes a plurality of inputs, a plurality of output pads, a programmable logic block, an analog circuit block, an analog-to-digital converter programmably coupleable to individual analog circuits in the analog circuit block, and an interconne... | 10/31/2006 |
| 7119398 | Power-up and power-down circuit for system-on-a-chip integrated circuit A power-up and power-down circuit for an integrated circuit includes a voltage regulator set for a first voltage. A first I/O pad is coupled internally to an input to the voltage regulator and to first internal circuits. The second voltage is externally coupled to t... | 10/10/2006 |
| 7115988 | Bypass capacitor embedded flip chip package lid and stiffener The present invention provides a heat spreader with a bypass capacitor to provide substantially instant power and/or to control simultaneous switching noise (SSN). The present invention also provides a semiconductor device package incorporating this heat spreader. I... | 10/03/2006 |
| 7116181 | Voltage- and temperature-compensated RC oscillator circuit An integrated temperature-compensated RC oscillator circuit includes an inverter having an input and an output. An RC network is coupled between the inverter and a pair of comparators. A first comparator has an inverting input coupled to a first reference voltage, a... | 10/03/2006 |
| 7112867 | Resistive isolation between a body and a body contact A high resistance region may be used to isolate the body of a first transistor from a body contact. ... | 09/26/2006 |
| 7102384 | Non-volatile memory architecture for programmable-logic-based system on a chip A programmable system-on-a-chip integrated circuit device includes a programmable logic block. A digital input/output circuit block is coupled to the programmable logic block. A SRAM block is coupled to the programmable logic block. At least one non-volatile memory ... | 09/05/2006 |
| 7102391 | Clock-generator architecture for a programmable-logic-based system on a chip A programmable system-on-a-chip integrated circuit device comprises at least one of a crystal oscillator circuit, an RC oscillator circuit, and an external oscillator input. A clock conditioning circuit is selectively coupleable to one of the programmable logic bloc... | 09/05/2006 |
| 7099189 | SRAM cell controlled by non-volatile memory cell First and second complimentary static random-access-memory cell bit lines are coupled to first and second bit nodes through first and second access transistors controlled by a word line. A first inverter has an input coupled to the first bit node and an output coupl... | 08/29/2006 |
| 7034569 | Programmable system on a chip for power-supply voltage and current monitoring and control A programmable system-on-a-chip integrated circuit device includes a programmable logic block, at least one user non-volatile memory block, and voltage-measuring and control analog and digital circuits on a single semiconductor integrated circuit chip or a flip chip... | 04/25/2006 |
| 7030649 | Integrated circuit including programmable logic and external-device chip-enable override control An integrated circuit device includes a programmable logic block, a monitoring input, a condition-sensing circuit coupled to the monitoring input and configured to generate a condition-sensed signal at an output in response to sensing a condition at the monitoring i... | 04/18/2006 |
| 6949812 | Method for manufacturing a high frequency semiconductor structure and high frequency semiconductor structure A semiconductor structure for high frequency operation has a substrate with a doped well formed therein and a buffer layer made of a substrate material covers the well. The buffer layer is made of an undoped material and is disposed on a top side of the well for inh... | 09/27/2005 |
| 6787877 | Method for filling structural gaps and integrated circuitry A semiconductor processing method for filling structural gaps includes depositing a substantially boron free silicon oxide comprising material at a first average deposition rate over an exposed semiconductive material in a gap between wordline constructions and at a... | 09/07/2004 |
| 6774454 | Semiconductor device with an silicon insulator (SOI) substrate A semiconductor and a method of manufacturing thereof form a region with a sufficient gettering effect. A p-type channel MOSFET and an n-type channel MOSFET are formed in an n-type semiconductor layer, which is isolated in a form of islands on an SOI substrate. A hi... | 08/10/2004 |
| 6774416 | Small area cascode FET structure operating at mm-wave frequencies A small area cascode FET structure capable of operating at mm-wave frequenices cascades a common-source (CS) FET with a common gate (CG) FET, in a smaller physical area than conventional cascode FET structures. The small area of the cascode FET structure is partiall... | 08/10/2004 |
| 6724020 | Semiconductor device and power amplifier using the same A semiconductor device comprising a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which is formed on the surface of the guard ring of the emitter layer, wher... | 04/20/2004 |
| 6661068 | Semiconductor device and method of providing regions of low substrate capacitance A semiconductor structure (1), comprising a isolation region (5) formed on a semiconductor material (10). A pillar (15) is formed in the semiconductor material under the isolation region, where the pillar is capped with a first dielectric material (20) to... | 12/09/2003 |
| 6646320 | Method of forming contact to poly-filled trench isolation region Existing polysilicon emitter technology is used to contact poly fill in a trench isolation structure. A standard single poly emitter window process is followed. An "emitter window" is masked directly over the polysilicon trench fill. Heavily doped single ... | 11/11/2003 |
| 6635537 | Method of fabricating gate oxide A method of fabricating a gate oxide layer. A mask layer isformed on a substrate. The mask layer and the substrate are patterned to form a trench in the substrate. A portion of the mask layer is removed to expose the substrate at a top edge corner portion... | 10/21/2003 |
| 6576937 | Semiconductor device and power amplifier using the same A semiconductor device including a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which is formed on the surface of the guard ring of the emitter l... | 06/10/2003 |
| 6479880 | Floating gate isolation device An isolation structure providing electrical isolation in two dimensions between memory cells in semiconductor memory device. The isolation structure comprises a trench formed in a substrate of a semiconductor memory device such as a Dynamic Random Access ... | 11/12/2002 |
| 6465867 | Amorphous and gradated barrier layer for integrated circuit interconnects An integrated circuit and manufacturing method therefor is provided having a semiconductor substrate with a semiconductor device. A device dielectric layer is formed on the semiconductor substrate. A channel dielectric layer on the device dielectric layer... | 10/15/2002 |
| 6459134 | Semiconductor devices which have analog and digital circuits integrated on a common substrate A semiconductor device with digital and analog circuits has a structure for preventing noise penetration from the digital circuit to the analog circuit. The semiconductor device has a semiconductor substrate, first and second wells independently formed at... | 10/01/2002 |
| 6414368 | Microcomputer with high density RAM on single chip A microcomputer comprises an integrated circuit device with processor and memory and communication links arranged to provide non-shared connections to similar links of other microcomputers. The communication links include message synchronisation and permi... | 07/02/2002 |
| 6404034 | CMOS circuit with all-around dielectrically insulated source-drain regions A CMOS circuit has all-around dielectrically insulated source-drain regions. Trenches are formed in the source-drain regions. The trenches are etched onto the mono-crystalline silicon and filled with undoped or very lightly doped silicon. The completely o... | 06/11/2002 |
| 6388334 | System and method for circuit rebuilding via backside access A circuit modification tool and method for a flip-chip IC permits access to circuit regions near the interconnects using an aperture formed through the circuit side. In one embodiment, an etching tool is adapted to remove substrate from the backside of th... | 05/14/2002 |
| 6373099 | Method of manufacturing a surrounding gate type MOFSET A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interpo... | 04/16/2002 |