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| Number | Title | Issue Date |
| 8188470 | Semiconductor stacking layer and fabricating method thereof A fabricating method of a semiconductor stacking layer includes following steps. First, an amorphous silicon (a-Si) layer is formed on a substrate. Surface treatment is then performed on a surface of the a-Si layer. After that, a doped microcrystalline silicon (μc-... | 05/29/2012 |
| 8110829 | Array substrate of liquid crystal display and method for fabricating the same A thin film transistor (TFT) for a liquid crystal display device includes a gate electrode, a source electrode, a drain electrode, an active region including a first semiconductor layer and a second semiconductor layer interposed within the first semiconductor layer... | 02/07/2012 |
| 8003985 | Apparatus having a dielectric containing scandium and gadolinium Apparatus having a dielectric containing scandium and gadolinium can provide a reliable structure with a high dielectric constant (high k). In an embodiment, atomic layer deposition (ALD) can be used to form a nanolaminate dielectric of gadolinium oxide (Gd2 | 08/23/2011 |
| 7999257 | Process for eliminating delamination between amorphous silicon layers A circuit structure includes a substrate; a first amorphous silicon layer over the substrate; a first glue layer over and adjoining the first amorphous silicon layer; and a second amorphous silicon layer over and adjoining the first glue layer. ... | 08/16/2011 |
| 7989805 | Electronic device improved in heat radiation performance for heat generated from active element An electronic device of the present invention includes a first substrate provided with a thin film active element, having a thickness of 200 μm or lower, and a second substrate formed with a high thermal conductivity portion. The second substrate is applied to one ... | 08/02/2011 |
| 7968879 | Thin film transistor and display device including the same One object of the present invention is reduction of off current of a thin film transistor. Another object of the present invention is improvement of electric characteristics of the thin film transistor. Further, another object of the present invention is improvement... | 06/28/2011 |
| 7935966 | Semiconductor device with heterojunctions and an inter-finger structure A semiconductor device including, on at least one surface of a crystalline semiconductor substrate, at least one first amorphous semiconductor region doped with a first type of conductivity. The semiconductor substrate includes, on the same at least one surface, at ... | 05/03/2011 |
| 7915612 | Photoelectric conversion device and method of producing the same A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×1016 to 2.0×10... | 03/29/2011 |
| 7714327 | Electronic device improved in heat radiation performance for heat generated from active element An electronic device of the present invention includes a first substrate provided with a thin film active element, having a thickness of 200 μm or lower, and a second substrate formed with a high thermal conductivity portion. The second substrate is applied to one ... | 05/11/2010 |
| 7655947 | Thin film transistor used as a switching element in an active matrix type liquid crystal display device The present invention provides a thin film transistor comprising a drain electrode and a source electrode separated by a channel region formed over a contact portion with an amorphous silicon layer and wherein an impurity from the channel region is removed and a rem... | 02/02/2010 |
| 7501652 | Thin film transistor structure and manufacturing method thereof A thin film transistor source/drain structure and the manufacturing method thereof are disclosed. The thin film transistor source/drain structure uses a sandwich structure to reduce the resistivity of the source/drain and upgrade the reliability. The sandwich struct... | 03/10/2009 |
| 7476895 | Method of fabricating n-type semiconductor diamond, and semiconductor diamond An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline {100} diamond substrate 10 so as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combina... | 01/13/2009 |
| 7429749 | Strained-silicon for CMOS device using amorphous silicon deposition or silicon epitaxial growth An integrated circuit (IC) includes a strained-silicon layer formed by deposition of amorphous silicon onto either a region of a semiconductor layer that has been implanted with ions to create a larger spacing between atoms in a crystalline lattice of the semiconduc... | 09/30/2008 |
| 7427775 | Fabricating strained channel epitaxial source/drain transistors The mobility of carriers may be increased in strained channel epitaxial source/drain transistors. Doped silicon material may be blanket deposited after removing ion implanted source/drain regions. The blanket deposition forms amorphous films over non-source/drain ar... | 09/23/2008 |
| 7414258 | Spacer electrode small pin phase change memory RAM and manufacturing method A memory device comprising a first pan-shaped electrode having a side wall with a top side, a second pan-shaped electrode having a side wall with a top side and an insulating wall between the first side wall and the second side wall. The insulating wall has a thickn... | 08/19/2008 |
| 7413965 | Method of manufacturing a thin-film circuit substrate having penetrating structure, and protecting adhesive tape A method of manufacturing a thin-film circuit substrate, containing: (a) gouging a surface of a circuit substrate in a depth at least approximately equal to a thickness of a final product of the substrate, to form a section to be formed a penetrating section;... | 08/19/2008 |
| 7397063 | Semiconductor device A semiconductor device comprises a glass substrate serving as a substrate having an insulated surface and a silicon layer located on a position overlapping with this glass substrate. The silicon layer includes an amorphous gettering region. Preferably, the silicon l... | 07/08/2008 |
| 7391050 | Phase change memory device with thermal insulating layers A memory device is described an active material configured to be placed in a more or less conductive state by means of appropriate switching processes. The active material is positioned between a material having low thermal conductivity or material layers having low... | 06/24/2008 |
| 7362784 | Laser irradiation method, laser irradiation apparatus, and semiconductor device An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of th... | 04/22/2008 |
| 7352201 | System and method for testing devices utilizing capacitively coupled signaling An apparatus and method for testing a semiconductor device in an AC test regime. The test apparatus includes a test plate capacitively couple to the signal terminals of the integrated circuit. The test plate is coupled to a test receiver circuit to receive and outpu... | 04/01/2008 |
| 7348598 | Thin film transistor and liquid crystal display device using the same A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT includes a gate electrode for... | 03/25/2008 |
| 7341906 | Method of manufacturing sidewall spacers on a memory device, and device comprising same The present invention is generally directed to a method of manufacturing sidewall spacers on a memory device, and a memory device comprising such sidewall spacers. In one illustrative embodiment, the method includes forming sidewall spacers on a memory device compri... | 03/11/2008 |
| 7339188 | Polycrystalline silicon film containing Ni The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni... | 03/04/2008 |
| 7338829 | Semiconductor structures having through-holes sealed with feed through metalization The invention relates to a method for producing a detector for determining the energy of photons and charged particles; to be precise, a so-called ΔE detector or transmission detector. The invention also relates to a detector that can be produced by using said meth... | 03/04/2008 |
| 7319057 | Phase change material memory device A lower electrode may be covered by a protective film to reduce the exposure of the lower electrode to subsequent processing steps or the open environment. As a result, materials that may have advantageous properties as lower electrodes may be utilized despite the f... | 01/15/2008 |
| 7288787 | Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistors The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a sou... | 10/30/2007 |
| 7279732 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 10/09/2007 |
| 7276928 | System and method for testing devices utilizing capacitively coupled signaling An apparatus and method for testing a semiconductor device in an AC test regime. The test apparatus includes a test plate capacitively couple to the signal terminals of the integrated circuit. The test plate is coupled to a test receiver circuit to receive and outpu... | 10/02/2007 |
| 7274205 | System and method for testing devices utilizing capacitively coupled signaling An apparatus and method for testing a semiconductor device in an AC test regime. The test apparatus includes a test plate capacitively couple to the signal terminals of the integrated circuit. The test plate is coupled to a test receiver circuit to receive and outpu... | 09/25/2007 |
| 7274204 | System and method for testing devices utilizing capacitively coupled signaling An apparatus and method for testing a semiconductor device in an AC test regime. The test apparatus includes a test plate capacitively couple to the signal terminals of the integrated circuit. The test plate is coupled to a test receiver circuit to receive and outpu... | 09/25/2007 |
| 7271395 | Device and method for the measurement of depth of interaction using co-planar electrodes A device and method for measuring a depth of interaction of an ionizing event and improving resolution of a co-planar grid sensor (CPG) are provided. A time-of-occurrence is measured using a comparator to time the leading edge of the event pulse from the non-collect... | 09/18/2007 |
| 7235854 | Lanthanide doped TiOdielectric films A dielectric film containing lanthamide doped TiOx and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric film is formed by ion... | 06/26/2007 |
| 7208804 | Crystalline or amorphous medium-K gate oxides, Y0and Gd0 A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Also shown is a gate oxide with a conduction band offset of 2 eV or greater. Gate oxi... | 04/24/2007 |
| 7205218 | Method including forming gate dielectrics having multiple lanthanide oxide layers A dielectric film having a layer of a lanthanide oxide and a layer of another lanthanide oxide, and a method of fabricating such a dielectric film produce a reliable gate dielectric with a equivalent oxide thickness thinner than attainable using SiO2. A g... | 04/17/2007 |
| 7205620 | Highly reliable amorphous high-k gate dielectric ZrON A gate dielectric and method of fabricating a gate dielectric that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate dielectrics formed from metals such as zirconium are thermodynamically... | 04/17/2007 |
| 7199395 | Photovoltaic cell and method of fabricating the same An i-type amorphous silicon film and an anti-reflection film made of amorphous silicon nitride or the like are formed in this order on a main surface of an n-type single-crystalline silicon substrate. On a back surface of the n-type single-crystalline silicon substr... | 04/03/2007 |
| 7199303 | Optical energy conversion apparatus An optical energy conversion apparatus 10 includes a first impurity doped semiconductor layer 5, formed on a substrate, and which is of a semiconductor material admixed with a first impurity, an optically active layer 6, formed on the first impu... | 04/03/2007 |
| 7199023 | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The HfSiON layer thickness is contro... | 04/03/2007 |
| 7196929 | Method for operating a memory device having an amorphous silicon carbide gate insulator A floating gate transistor has a reduced barrier energy at an interface with an adjacent amorphous silicon carbide (a-SiC) gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The... | 03/27/2007 |
| 7192892 | Atomic layer deposited dielectric layers An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing a hafnium metal layer on a substrate sur... | 03/20/2007 |
