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| Number | Title | Issue Date |
| 8183566 | Hetero-crystalline semiconductor device and method of making same A hetero-crystalline semiconductor device and a method of making the same include a non-single crystalline semiconductor layer and a nanostructure layer that comprises a single crystalline semiconductor nanostructure integral to a crystallite of the non-single cryst... | 05/22/2012 |
| 8168972 | Method for simultaneous recrystallization and doping of semiconductor layers and semiconductor layer systems produced according to this method A method for simultaneous recrystallization and doping of semiconductor layers, in particular for the production of crystalline silicon thin layer solar cells. A substrate base layer 1 is produced, and subsequently, an intermediate layer system 2 which... | 05/01/2012 |
| 8093590 | Photoelectric conversion device In order to form a metal thin film, a silicide film, or the like between an upper-layer unit cell and a lower-layer unit cell in stacked-layer photoelectric conversion devices, a step of forming the thin film is additionally needed. Therefore, a problem such as decl... | 01/10/2012 |
| 8080824 | Suppressing recombination in an electronic device A semiconductor material structure includes at least one region capable of generating electrons and holes each having an associated mean kinetic energy during operation. A material layer in proximity to the region provides an associated potential energy larger than ... | 12/20/2011 |
| 8026517 | Semiconductor structures A semiconductor structure is disclosed. The semiconductor structure includes a polycrystal substrate, a first single crystal layer formed thereon and a second single crystal layer formed on the first single crystal layer. A variation of coefficients of thermal expan... | 09/27/2011 |
| 7919776 | High frequency diode and method for producing same A high frequency diode comprising: a P type region, an N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is made of a silicon wafer that has a carbon concentration of 5×101... | 04/05/2011 |
| 7915611 | Photoelectric conversion device In order to form a metal thin film, a silicide film, or the like between an upper-layer unit cell and a lower-layer unit cell in stacked-layer photoelectric conversion devices, a step of forming the thin film is additionally needed. Therefore, a problem such as decl... | 03/29/2011 |
| 7910923 | Semiconductor device A semiconductor device with superior long-term reliability is disclosed that alleviates current concentration into a switch structure arranged at an outermost portion. The semiconductor device comprises hetero semiconductor regions formed of polycrystalline silicon ... | 03/22/2011 |
| 7906778 | Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure. ... | 03/15/2011 |
| 7893434 | High frequency diode and method for producing same A high frequency diode comprising: a P type region, an N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is made of a silicon wafer that has a carbon concentration of 5×101... | 02/22/2011 |
| 7875884 | Hetero-crystalline structure and method of making same A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. Th... | 01/25/2011 |
| 7858981 | Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain Some embodiments of the present invention include providing carbon doped regions and raised source/drain regions to provide tensile stress in NMOS transistor channels. ... | 12/28/2010 |
| 7709837 | Semiconductor device and its manufacturing method Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in... | 05/04/2010 |
| 7601983 | Transistor and method of manufacturing the same A transistor includes a semiconductor substrate that has a first surface of a {100} crystal plane, a second surface of the {100} crystal plane having a height lower than that of the first surface, and a third surface of a {111} crystal plane connecting the first sur... | 10/13/2009 |
| 7547914 | Single-crystal layer on a dielectric layer The process relates to the production of a layer of a single-crystal first material on a second material. The second material has at least one aperture exposing a surface portion of a single-crystal third material. The process generally includes forming an at least ... | 06/16/2009 |
| 7446335 | Process and apparatus for forming nanoparticles using radiofrequency plasmas Methods and apparatus for producing nanoparticles, including single-crystal semiconductor nanoparticles, are provided. The methods include the step of generating a constricted radiofrequency plasma in the presence of a precursor gas containing precursor molecules to... | 11/04/2008 |
| 7348207 | Method of manufacturing organic EL device, organic EL device, and electronic apparatus A method of manufacturing an organic EL device that is capable of reducing the manufacturing cost by effectively using the material is provided. In the method of manufacturing the organic EL device including a white-light-emitting layer and a color filter, the white... | 03/25/2008 |
| 7342266 | Field effect transistors with dielectric source drain halo regions and reduced miller capacitance A field effect transistor (FET) device includes a gate conductor and gate dielectric formed over an active device area of a semiconductor substrate. A drain region is formed in the active device area of the semiconductor substrate, on one side of the gate conductor,... | 03/11/2008 |
| 7329916 | DRAM cell arrangement with vertical MOS transistors The invention is related to a DRAM cell arrangement with vertical MOS transistors. Channel regions arranged along one of the columns of a memory cell matrix are parts of a rib which is surrounded by a gate dielectric layer. Gate electrodes of the MOS transistors bel... | 02/12/2008 |
| 7319251 | Bipolar transistor A bipolar transistor formed in a substrate includes a collector, a base layer above the collector, where the base layer includes a base that is monocrystalline, and an emitter layer that is monocrystalline and above the base, where the emitter layer includes silicon... | 01/15/2008 |
| 7316949 | Integrating n-type and p-type metal gate transistors At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal... | 01/08/2008 |
| 7294518 | Composition for stripping photoresist and method for manufacturing thin film transistor array panel using the same The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent. ... | 11/13/2007 |
| 7288787 | Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistors The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a sou... | 10/30/2007 |
| 7273788 | Ultra-thin semiconductors bonded on glass substrates A method for forming a semiconductor on insulator structure includes providing a glass substrate, providing a semiconductor wafer, and performing a bonding cut process on the semiconductor wafer and the glass substrate to provide a thin semiconductor layer bonded to... | 09/25/2007 |
| 7274050 | Packaging and manufacturing of an integrated circuit Apparatus, packaging, and methods of manufacture of an integrated circuit are provided. The integrated circuit includes a component of a first type fabricated on a first substrate containing a first material, and a component of a second type fabricated on a second s... | 09/25/2007 |
| 7271052 | Long retention time single transistor vertical memory gain cell A single transistor vertical memory gain cell with long data retention times. The memory cell is formed from a silicon carbide substrate to take advantage of the higher band gap energy of silicon carbide as compared to silicon. The silicon carbide provides much lowe... | 09/18/2007 |
| 7262428 | Strained Si/SiGe/SOI islands and processes of making same A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under the active area to partially vertically isolate the active area. A the... | 08/28/2007 |
| 7262464 | Semiconductor device with single crystal semiconductor layer(s) bonded to insulating surface of substrate A semiconductor device includes a substrate with an insulating surface and a single crystal semiconductor layer, which is bonded to the insulating surface of the substrate. The device further includes a first insulating layer, which is provided between the insulatin... | 08/28/2007 |
| 7259427 | Semiconductor device and method of manufacturing the same The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second electrode ... | 08/21/2007 |
| 7253491 | Silicon light-receiving device A silicon light-receiving device is provided. In the device, a substrate is based on n-type or p-type silicon. A doped region is ultra-shallowly doped with the opposite type dopant to the dopant type of the substrate on one side of the substrate so that a photoelect... | 08/07/2007 |
| 7248232 | Information processing device There is provided an information processing apparatus which occupies a small space and which is capable of supplying image information having high definition and high resolution. An information processing apparatus of the invention employs a head mount display (HMD)... | 07/24/2007 |
| 7241652 | Method for fabricating organic thin film transistor Disclosed herein is a method for fabricating an organic thin film transistor that includes a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein the surface of the gate insula... | 07/10/2007 |
| 7235810 | Semiconductor device and method of fabricating the same There is provided a crystalline TFT in which reliability comparable to or superior to a MOS transistor can be obtained and excellent characteristics can be obtained in both an on state and an off state. A gate electrode of the crystalline TFT is formed of a laminate... | 06/26/2007 |
| 7224021 | MOSFET with high angle sidewall gate and contacts for reduced miller capacitance The present invention relates to an FET device having a conductive gate electrode with angled sidewalls. Specifically, the sidewalls of the FET device are offset from the vertical direction by an offset angle that is greater than about 0° and not more than about 45... | 05/29/2007 |
| 7221023 | Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same According to some embodiments of the invention, a method includes preparing a semiconductor substrate having an active region, doping channel ions in the active region, forming a planarized selective epitaxial growth (SEG) layer in a predetermined region of the acti... | 05/22/2007 |
| 7220609 | Method of manufacturing a semiconductor structure comprising clusters and/or nanocrystal of silicon and a semiconductor structure of this kind A method for manufacturing a semiconductor structure comprising clusters and/or nanocrystals of silicon described which are present in distributed form in a matrix of silicon compound. The method comprises the steps of depositing a layer of thermally nonstable silic... | 05/22/2007 |
| 7202499 | Semiconductor device including two transistors and capacitive part An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not overlap with the LDD region. The TFT is made from crystalline semiconduc... | 04/10/2007 |
| 7198967 | Active matrix type semiconductor display device There is provided an active matrix type semiconductor display device which realizes low power consumption and high reliability. In the active matrix type semiconductor display device of the present invention, a counter electrode is divided into two, different potent... | 04/03/2007 |
| 7198992 | Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semicon... | 04/03/2007 |
| 7198974 | Micro-mechanically strained semiconductor film One aspect of the present subject matter relates to a method for forming strained semiconductor film. In various embodiments, a single crystalline semiconductor film is formed on a substrate surface, and a recess is created beneath the film. A portion of the film is... | 04/03/2007 |
