Class 257/5 - In array

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter in which the amorphous bulk effect switch
No. of patents: 237
Last issue date: 05/29/2012

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Number	Title	Issue Date
8188455	Information recording/reproducing device An information recording/reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel stru...	05/29/2012
8164081	Memory devices and formation methods A method includes forming an electrical insulator material over an integrated circuit having a metal-containing conductive interconnect and activating a dopant in a semiconductor material of a substrate to provide a doped region. The doped region provides a junction...	04/24/2012
8158967	Integrated memory arrays Some embodiments include methods of forming memory arrays. A stack of semiconductor material plates may be patterned to subdivide the plates into pieces. Electrically conductive tiers may be formed along sidewall edges of the pieces. The pieces may then be patterned...	04/17/2012
8154006	Controlling the circuitry and memory array relative height in a phase change memory feol process flow A CMOS logic portion embedded with a PCM portion is recessed by a gate structure height as measured by a thickness of a gate oxide and a polysilicon gate to provide planarity of the CMOS logic portion with the PCM portion is described. ...	04/10/2012
8154005	Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars An integrated circuit including vertically oriented diode structures between conductors and methods of fabricating the same are provided. Two-terminal devices such as passive element memory cells can include a diode steering element in series with an antifuse and/or...	04/10/2012
8148711	Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (105), a resistance...	04/03/2012
8143612	Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing An array of “mushroom” style phase change memory cells is manufactured by forming a separation layer over an array of contacts, forming an isolation layer on the separation layer and forming an array of memory element openings in the isolation layer using a lith...	03/27/2012
8129709	Nonvolatile memory device A nonvolatile memory device (21) is provided with a semiconductor substrate, a plurality of active regions (3) formed on the semiconductor substrate and extending in a band, a plurality of select active elements (23) formed in the active regions...	03/06/2012
8129708	Highly integrated phase change memory device having micro-sized diodes and method for manufacturing the same A highly integrated phase change memory device and a method for manufacturing the same is disclosed. The highly integrated phase change memory device includes a semiconductor substrate having a cell area and a peripheral area with impurity regions formed in the cell...	03/06/2012
8097875	Semiconductor memory device A semiconductor memory device includes the first transistor having first and second source/drain diffusion regions positioned below a second bit line to sandwich the first word line therebetween, and the second source/drain diffusion region positioned between the fi...	01/17/2012
8093578	Nonvolatile memory element, nonvolatile memory element array, and method for manufacturing nonvolatile memory element The present invention is configured such that a resistance variable element (16) and a rectifying element (20) are formed on a substrate (12). The resistance variable element (16) is configured such that a resistance variable layer (14...	01/10/2012
8084762	Resistive memory A memory device includes an array of memory structures disposed in rows and columns and constructed over a substrate, each memory structure comprising a first signal electrode, a second signal electrode, and a resistive layer coupled to the first signal electrode an...	12/27/2011
8071972	Silicon based nanoscale crossbar memory The present application describes a crossbar memory array. The memory array includes a first array of parallel nanowires of a first material and a second array of parallel nanowires of a second material. The first and the second array are oriented at an angle with e...	12/06/2011
8053753	Thin film logic circuitry A multi-layer thin-film device includes thin film memory and thin film logic. The thin film memory may be programmable resistance memory, such as phase change memory, for example. The thin film logic may be complementary logic. ...	11/08/2011
8049202	Phase change memory device having phase change material layer containing phase change nano particles A phase change memory device including a phase change material layer having phase change nano particles and a method of fabricating the same are provided. The phase change memory device may include a first electrode and a second electrode facing each other, a phase ...	11/01/2011
8049201	Semiconductor memory device and method of manufacturing the same A semiconductor memory device includes first conductive lines on a substrate, an interlayer insulating layer with a plurality of via holes on the substrate, second conductive lines on the interlayer insulating layer, and a resistive memory material in the via holes ...	11/01/2011
8035097	Phase change memory A phase change memory is provided, which includes a semiconductor substrate having a first conductive type, buried word lines having a second conductive type, doped semiconductor layers having the first conductive type, memory cells, metal silicide layers, and bit l...	10/11/2011
8030637	Memory element using reversible switching between SP2 and SP3 hybridized carbon An information storage element has a carbon storage material including hexagonally bonded carbon and tetrahedrally bonded carbon. The information is formed by a changeable ratio of hexagonally bonded carbon and tetrahedrally bonded carbon. ...	10/04/2011
8022385	Memory devices with buried lines A memory device wherein a diode is serially connected to a programmable resistor and is in electrical communication with a buried digit line. An electrically conductive plug is electrically interposed between the digit line and a strapping layer, thereby creating a ...	09/20/2011
8008645	Memory cell array with low resistance common source and high current drivability In the present resistive memory array, included are a substrate, a plurality of source regions in the substrate, and a conductor connecting the plurality of source regions, the conductor being positioned adjacent to the substrate to form, with the plurality of sourc...	08/30/2011
7994493	Phase change memory devices employing cell diodes and methods of fabricating the same Phase change memory devices may include a semiconductor substrate of a first conductivity type and a plurality of parallel word lines disposed on the semiconductor substrate. The word lines may have a second conductivity type different from the first conductivity ty...	08/09/2011
7977662	Phase-changeable memory devices having reduced susceptibility to thermal interference A non-volatile memory array includes an array of phase-changeable memory elements that are electrically insulated from each other by at least a first electrically insulating region extending between the array of phase-changeable memory elements. The first electrical...	07/12/2011
7952087	Phase change device with offset contact A programmable resistance memory combines multiple cells into a block that includes one or more shared electrodes. The shared electrode configuration provides additional thermal isolation for the active region of each memory cell, thereby reducing the current requir...	05/31/2011
7943923	Multi-level data memorisation device with phase change material A data memorization device including at least: a stack of layers including at least one memory layer based on a phase change material arranged between at least two insulating layers, placed on a substrate, a plurality of columns arranged in the stack of layers, and ...	05/17/2011
7935953	Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a middle electrode disposed on the resistor structure, a diode structure disposed on the middle electrode, and an upper electrode disposed on the diode str...	05/03/2011
7932510	Carbon nanotube grown on catalyst and manufacture method A method for manufacturing carbon nanotubes includes the steps of: (a) depositing catalytic fine particles containing Al—Fe, Zr—Co or Hf—Co on a base body; and (b) growing carbon nanotubes on the catalytic fine particles deposited on the base body. ...	04/26/2011
7915603	Modifiable gate stack memory element An apparatus and method for storing information are provided, including using a transistor having a channel, a gate oxide layer, a gate electrode, and a modifiable gate stack layer. The on-resistance of the transistor is changed by causing a non-charge-storage based...	03/29/2011
7910914	Semiconductor memory and method for manufacturing the same According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a plurality of memory devices each having: a resistance change element, and a diode connected serially to the resistance change element; and a source con...	03/22/2011
7910913	Phase change memory devices A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase c...	03/22/2011
7884349	Selection device for re-writable memory A memory cell including a memory element and a non-ohmic device (NOD) that are electrically in series with each other is disclosed. The NOD comprises a semiconductor based selection device operative to electrically isolate the memory element from a range of voltages...	02/08/2011
7880160	Memory using tunneling field effect transistors A memory includes a first tunneling field effect transistor including a first drain and a first source, the first drain coupled to a first resistive memory element. The memory includes a second tunneling field effect transistor including a second drain and sharing t...	02/01/2011
7868315	Semiconductor memory device and method of manufacturing the same A phase change memory device including plural memory cells is disclosed. Each of the memory cells includes memory transistors and phase change film portions formed above or below the memory transistors. The phase change film portions correspond to the respective mem...	01/11/2011
7863598	Nonvolatile memory device A nonvolatile memory device comprises memory cells, each including a variable resistor element for storing data in accordance with a change in electrical resistance due to application of electrical stress, and a thermal diffusion barrier on a thermal diffusion path,...	01/04/2011
7838864	Chalcogenide switch with laser recrystallized diode isolation device and use thereof in three dimensional memory arrays A three-dimensional memory array formed of one or more two-dimensional memory arrays of one-time programmable memory elements arranged in horizontal layers and stacked vertically upon one another; and a two-dimensional memory array of reprogrammable phase change mem...	11/23/2010
7800095	Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory Provided is a phase-change memory device including a phase-change material pattern of which strips are shared by neighboring cells. The phase-change memory device includes a plurality of bottom electrodes arranged in a matrix array. The phase-change material pattern...	09/21/2010
7791060	Semiconductor memory device and method of controlling the same A semiconductor memory device comprising: first and second wirings arranged in a matrix; and a memory cell being provided at an intersecting point of the first and second wirings and including a resistance change element and an ion conductor element connected to eac...	09/07/2010
7763879	Three-dimensional phase-change memory array A three-dimensional phase-change memory array. In one embodiment of the invention, the memory array includes a first plurality of diodes, a second plurality of diodes disposed above the first plurality of diodes, a first plurality phase-change memory elements dispos...	07/27/2010
7755077	Semiconductor memory device A semiconductor memory device includes the first transistor having first and second source/drain diffusion regions positioned below a second bit line to sandwich the first word line therebetween, and the second source/drain diffusion region positioned between the fi...	07/13/2010
7714315	Thermal isolation of phase change memory cells A memory includes an array of resistive memory cells, bit lines between rows of the memory cells for accessing the memory cells, and a conductive plate coupled to each of the memory cells. ...	05/11/2010
7700935	Non-volatile memory device and method of fabricating the same A non-volatile memory device and a method of fabricating the same are provided. In the non-volatile memory device, at least one first semiconductor layer of a first conductivity type may be formed spaced apart from each other on a portion of a substrate. A plurality...	04/20/2010

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Class 257/5 - In array